JPS56124030A - Manufacture of semiconductor pressure detector - Google Patents

Manufacture of semiconductor pressure detector

Info

Publication number
JPS56124030A
JPS56124030A JP2846180A JP2846180A JPS56124030A JP S56124030 A JPS56124030 A JP S56124030A JP 2846180 A JP2846180 A JP 2846180A JP 2846180 A JP2846180 A JP 2846180A JP S56124030 A JPS56124030 A JP S56124030A
Authority
JP
Japan
Prior art keywords
cantilever
pressure detector
semiconductor pressure
zero
point voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2846180A
Other languages
Japanese (ja)
Inventor
Katsuhiko Ishida
Makoto Shiraki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Gakki Co Ltd
Original Assignee
Nippon Gakki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Gakki Co Ltd filed Critical Nippon Gakki Co Ltd
Priority to JP2846180A priority Critical patent/JPS56124030A/en
Publication of JPS56124030A publication Critical patent/JPS56124030A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
    • G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

PURPOSE:To enable reduction of thermal drift of zero-point voltage by using Fe-Ni alloy material as a cantilever material of a cantilever-type semiconductor pressure detector. CONSTITUTION:The cantilever 11, one end of which is fixed to a supporting body 10, is formed by mold processing of an Fe-Ni alloy plate, and on the surface thereof stress detecting elements 13a-13d are provided so as to constitue a bridge circuit. For the purpose of reduction of zero-point voltage drift, the cantilever 11 is constituted by the Fe-Ni alloy material rolled at the rolling ratio of 40% or more and later subjected to heat treatment for 30min or longer, preferably for two hours, at the temperature of 200 deg.C-600 deg.C in order to increase Young's modulus, lower the extension ratio and improve the spring property thereof.
JP2846180A 1980-03-05 1980-03-05 Manufacture of semiconductor pressure detector Pending JPS56124030A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2846180A JPS56124030A (en) 1980-03-05 1980-03-05 Manufacture of semiconductor pressure detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2846180A JPS56124030A (en) 1980-03-05 1980-03-05 Manufacture of semiconductor pressure detector

Publications (1)

Publication Number Publication Date
JPS56124030A true JPS56124030A (en) 1981-09-29

Family

ID=12249297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2846180A Pending JPS56124030A (en) 1980-03-05 1980-03-05 Manufacture of semiconductor pressure detector

Country Status (1)

Country Link
JP (1) JPS56124030A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0098507A2 (en) * 1982-07-02 1984-01-18 Siemens Aktiengesellschaft Integrated circuit sensor for force or displacement

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5441176A (en) * 1977-09-07 1979-04-02 Hitachi Ltd Semiconductor strain measuring device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5441176A (en) * 1977-09-07 1979-04-02 Hitachi Ltd Semiconductor strain measuring device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0098507A2 (en) * 1982-07-02 1984-01-18 Siemens Aktiengesellschaft Integrated circuit sensor for force or displacement
US4588975A (en) * 1982-07-02 1986-05-13 Siemens Aktiengesellschaft Integrated sensor for force and motion

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