JPS6132817B2 - - Google Patents
Info
- Publication number
- JPS6132817B2 JPS6132817B2 JP51114054A JP11405476A JPS6132817B2 JP S6132817 B2 JPS6132817 B2 JP S6132817B2 JP 51114054 A JP51114054 A JP 51114054A JP 11405476 A JP11405476 A JP 11405476A JP S6132817 B2 JPS6132817 B2 JP S6132817B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- semiconductor
- spinel
- silicon
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11405476A JPS5338968A (en) | 1976-09-21 | 1976-09-21 | Spinel crystal for semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11405476A JPS5338968A (en) | 1976-09-21 | 1976-09-21 | Spinel crystal for semiconductor substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5338968A JPS5338968A (en) | 1978-04-10 |
| JPS6132817B2 true JPS6132817B2 (cs) | 1986-07-29 |
Family
ID=14627871
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11405476A Granted JPS5338968A (en) | 1976-09-21 | 1976-09-21 | Spinel crystal for semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5338968A (cs) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6844084B2 (en) * | 2002-04-03 | 2005-01-18 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel substrate and heteroepitaxial growth of III-V materials thereon |
| US7919815B1 (en) | 2005-02-24 | 2011-04-05 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel wafers and methods of preparation |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5147676A (ja) * | 1974-10-21 | 1976-04-23 | Yaskawa Denki Seisakusho Kk | Naraikakosochi |
-
1976
- 1976-09-21 JP JP11405476A patent/JPS5338968A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5338968A (en) | 1978-04-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4177321A (en) | Single crystal of semiconductive material on crystal of insulating material | |
| TWI443712B (zh) | 半導體晶圓及其製造方法 | |
| US20060060131A1 (en) | Method of forming a rare-earth dielectric layer | |
| JP2000068498A (ja) | 絶縁性窒化物膜およびそれを用いた半導体装置 | |
| US20060060826A1 (en) | Composition comprising rare-earth dielectric | |
| US4126731A (en) | Sapphire single crystal substrate for semiconductor devices | |
| US20080286949A1 (en) | Method of Forming a Rare-Earth Dielectric Layer | |
| US3990902A (en) | Magnesium-titanate-comprising spinel single crystal substrate for semiconductor devices | |
| CN112420491A (zh) | 氧化镓外延薄膜及生长氧化镓外延薄膜的方法 | |
| CN116666196A (zh) | 无旋转畴的κ-Ga2O3薄膜及κ-(AlxGa1-x)2O3/κ-Ga2O3异质结的制备方法 | |
| JPH0513342A (ja) | 半導体ダイヤモンド | |
| US20080111186A1 (en) | Field-Effect Transistor Structure and Method Therefor | |
| US5364468A (en) | Method for the growth of epitaxial metal-insulator-metal-semiconductor structures | |
| JPS6232608B2 (cs) | ||
| US5529640A (en) | Epitaxial metal-insulator-metal-semiconductor structures | |
| US5142350A (en) | Transistor having cubic boron nitride layer | |
| JPS6132817B2 (cs) | ||
| US5232862A (en) | Method of fabricating a transistor having a cubic boron nitride layer | |
| Thompson et al. | Epitaxial growth of II–VI compounds on sapphire substrates | |
| JPH03278542A (ja) | 半導体装置 | |
| JPH0618174B2 (ja) | 半導体基板 | |
| US5081053A (en) | Method for forming a transistor having cubic boron nitride layer | |
| JP3985288B2 (ja) | 半導体結晶成長方法 | |
| Munoz-Yague et al. | Molecular beam epitaxy of insulating fluoride-semiconductor heterostructures | |
| JPH0810670B2 (ja) | 薄膜単結晶シリコン基板 |