JPS6131351Y2 - - Google Patents
Info
- Publication number
- JPS6131351Y2 JPS6131351Y2 JP17737384U JP17737384U JPS6131351Y2 JP S6131351 Y2 JPS6131351 Y2 JP S6131351Y2 JP 17737384 U JP17737384 U JP 17737384U JP 17737384 U JP17737384 U JP 17737384U JP S6131351 Y2 JPS6131351 Y2 JP S6131351Y2
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- electrode
- display
- present
- contrast
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004973 liquid crystal related substance Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 4
- 239000012212 insulator Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- -1 SiO Chemical class 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【考案の詳細な説明】
本考案は表示体の電極構造に関するものであ
り、特に電極上に部分的に絶縁体を有することを
特徴とするものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electrode structure of a display body, and is particularly characterized by having an insulator partially on the electrode.
本考案の目的の第1の電界効果型表示体におい
て立体像を得ることにある。又第2の目的は電流
効果型表示体において消費電流を低下させること
にある。電界効果型表示体としては各種モードの
液晶表示体、PLZT,EPID等であり、電流型表
示体はDSM液晶表示体、EC等である。電界型表
示体としてFETN液晶表示体、電流型表示体とし
てECを例に従来からの欠点及び本発明を説明す
る。 An object of the present invention is to obtain a three-dimensional image in a first field-effect display. A second purpose is to reduce current consumption in a current effect type display. Field-effect displays include liquid crystal displays of various modes, PLZT, EPID, etc., and current-type displays include DSM liquid crystal displays, EC, etc. Conventional drawbacks and the present invention will be explained using a FETN liquid crystal display as an electric field type display and an EC as a current type display as an example.
FETN液晶表示体において、像表示は平面的で
立体感に欠ける欠点を有していた。本考案は、電
極を絶縁体で被覆するとある厚み以上でコントラ
スト低下をきたす現象が現われることを利用して
立体像を得んとするものである。第1図−1は本
考案の電極構造の断面図、第1図−2は平面図、
第2図は本考案の電極構造を用い、従来の共通電
極と組み合わせた場合のV−コントラスト曲線で
ある。第1図−1において1は基板であり、ガラ
ス、セラミツク、無機結晶等の無機材料、ポリエ
ステル、ポリスルフオン、ポリエーテルサルフオ
ン、セルロース、ナイロン等の高分子材料が用い
られる。2は透明導電膜であり、酸化スズ、酸化
インジウム等の金属酸化物あるいはAu,Pd等の
金属薄膜が用いられ、CVD法、スプレー法、蒸
着法、スパツタリング法等によつて基板1上に被
覆され、スクリーン印刷、ホトレジスト法等によ
りエツチングパターニングされる。3は絶縁体で
あり、SiO,SiO2,TiO2,ZrO2,Al2O3、窒化ケ
イ素、MgF2等の無機化合物、シリコン樹脂ポリ
イミド樹脂、テフロン樹脂、ポリエステル樹脂等
の高分子材料が用いられる。 FETN liquid crystal displays have the disadvantage that the image display is flat and lacks a three-dimensional effect. The present invention attempts to obtain a three-dimensional image by taking advantage of the phenomenon that when an electrode is coated with an insulator, contrast decreases when the thickness exceeds a certain level. Figure 1-1 is a sectional view of the electrode structure of the present invention, Figure 1-2 is a plan view,
FIG. 2 shows a V-contrast curve when the electrode structure of the present invention is used in combination with a conventional common electrode. In FIG. 1-1, 1 is a substrate, and inorganic materials such as glass, ceramic, and inorganic crystals, and polymeric materials such as polyester, polysulfon, polyether sulfon, cellulose, and nylon are used. 2 is a transparent conductive film, and a metal oxide such as tin oxide or indium oxide or a metal thin film such as Au or Pd is used, and is coated on the substrate 1 by a CVD method, a spray method, a vapor deposition method, a sputtering method, etc. Then, etching patterning is performed by screen printing, photoresist method, etc. 3 is an insulator, and inorganic compounds such as SiO, SiO 2 , TiO 2 , ZrO 2 , Al 2 O 3 , silicon nitride, MgF 2 , and polymeric materials such as silicone resin, polyimide resin, Teflon resin, and polyester resin are used. It will be done.
本考案の主旨からして誘電率が小さい方が厚み
が少なくてすむ。SiO2を用いる場合1000Å〜
3000Å程度望ましくは1500Å〜3000Åである。こ
れら絶縁体は透明導電膜と同様な方法で、マスキ
ング被覆するか、エツチングでパターニングする
ことができる。高分子絶縁体は、マスクを用いた
スピンナ法、浸漬法等により被覆するか、エツチ
ング法でパターニングして形成できる。第1図の
ような形状では2部の表示像は高コントラスト、
3部の表示像は低コントラストの像、すなわち中
心部が低コントラストで周囲が高コントラストの
立体像が得られる。 In view of the gist of the present invention, the smaller the dielectric constant, the smaller the thickness. 1000Å~ when using SiO 2
The thickness is about 3000 Å, preferably 1500 Å to 3000 Å. These insulators can be patterned by masking or etching in the same manner as the transparent conductive film. The polymer insulator can be formed by coating by a spinner method using a mask, a dipping method, or the like, or by patterning by an etching method. With the shape shown in Figure 1, the two displayed images have high contrast;
The three-part display image is a low-contrast image, that is, a stereoscopic image with low contrast in the center and high contrast in the periphery.
2及び3部の表示像のV−コントラスト曲線を
第2図に示す。3.1V,32Hzで駆動したとき2部
はAのようなコントラスト曲線を、3部はBのよ
うなコントラスト曲線を示す。このような効果は
FETN液晶表示の他、ゲストホスト、DAP,
PLZT等の表示体にも用いることができる。 The V-contrast curves of the displayed images of parts 2 and 3 are shown in FIG. When driven at 3.1V and 32Hz, the second part shows a contrast curve like A, and the third part shows a contrast curve like B. This kind of effect is
In addition to FETN LCD display, guest host, DAP,
It can also be used for displays such as PLZT.
電流効果型表示体においてはコントラストは電
流密度に比例するので、同一コントラストで消費
電流を低下させるには像表示電極面積を低減する
他はない。第1図の如き電極構造を設けることに
より電極2の3による被覆率に比例して電流値は
低下する。WO3,TiO2,Mo2O3、パルス電解イ
リジウムを用いたECにおいては2なる透明導電
膜上にWO3等の表示電極が施されるが、3なる
絶縁体はWO3電極上に形成させるのが良い。ビ
オロゲン系のECにおいては第1図−1の電極構
造がそのまま用いられる。 In a current effect display, the contrast is proportional to the current density, so the only way to reduce current consumption with the same contrast is to reduce the area of the image display electrodes. By providing the electrode structure as shown in FIG. 1, the current value decreases in proportion to the coverage ratio of the electrodes 2 to 3. In EC using WO 3 , TiO 2 , Mo 2 O 3 , and pulse electrolytic iridium, a display electrode such as WO 3 is formed on the second transparent conductive film, but the third insulator is formed on the WO 3 electrode. It's better to let them. In the viologen-based EC, the electrode structure shown in Figure 1-1 is used as is.
上述の如く本考案は、一対の基板内に電界効果
型液晶が封入され、該基板上の各々に電極が形成
されてなる液晶表示体において、該一方の基板上
に形成された電極の輪郭部端部よりも所定距離隔
てた内側に輪郭部端部を有する領域が該電極上に
形成され、該領域全面に厚さ3000Å以下の透明導
電膜が形成されてなるから、絶縁薄膜が形成され
ない電極の輪郭領域からの液晶への印加電圧と絶
縁薄膜が形成された部分の液晶への印加電圧とに
差異が生じ、従つて輪郭部が濃く電極内部が淡く
表示でき立体感のある表示をする事ができる。 As mentioned above, the present invention provides a liquid crystal display in which a field-effect liquid crystal is sealed within a pair of substrates, and electrodes are formed on each substrate, and the outline of the electrode formed on one of the substrates is A region having a contour end on the inside at a predetermined distance from the end is formed on the electrode, and a transparent conductive film with a thickness of 3000 Å or less is formed on the entire surface of the region, so that the electrode does not have an insulating thin film formed thereon. There is a difference between the voltage applied to the liquid crystal from the contour area and the voltage applied to the liquid crystal in the area where the insulating thin film is formed, so that the contour area is dark and the inside of the electrode is pale, resulting in a three-dimensional display. Can be done.
本考案によつて得られた電極構造を用いた表示
体は、時計、電卓、テレビ、光学シヤツター、グ
ラフイツクデイスプレイ、計測器の表示等に用い
られる。 Display bodies using the electrode structure obtained by the present invention are used for watches, calculators, televisions, optical shutters, graphic displays, displays for measuring instruments, and the like.
第1図1は本考案による電極の断面図、第1図
2は本考案による電極の平面図、第2図は本考案
による電極を用いたFETN液晶表示体のV−コン
トラスト曲線を示す。
FIG. 1 is a cross-sectional view of an electrode according to the present invention, FIG. 1 is a plan view of an electrode according to the present invention, and FIG. 2 is a V-contrast curve of a FETN liquid crystal display using the electrode according to the present invention.
Claims (1)
基板上の各々に電極が形成されてなる液晶表示体
において、該一方の基板上に形成された電極の輪
郭部端部よりも所定距離隔てた内側に輪郭部端部
を有する領域が該電極上に形成され、該領域全面
に厚さ3000Å以下の透明絶縁膜が形成されてなる
事を特徴とする液晶表示体。 In a liquid crystal display in which a field-effect liquid crystal is sealed within a pair of substrates, and electrodes are formed on each substrate, a predetermined distance apart from the edge of the contour of the electrode formed on one of the substrates. 1. A liquid crystal display comprising: a region having a contour end on the inside thereof; and a transparent insulating film having a thickness of 3000 Å or less formed on the entire surface of the region.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17737384U JPS60112285U (en) | 1984-11-22 | 1984-11-22 | liquid crystal display |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17737384U JPS60112285U (en) | 1984-11-22 | 1984-11-22 | liquid crystal display |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60112285U JPS60112285U (en) | 1985-07-30 |
JPS6131351Y2 true JPS6131351Y2 (en) | 1986-09-11 |
Family
ID=30734942
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17737384U Granted JPS60112285U (en) | 1984-11-22 | 1984-11-22 | liquid crystal display |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60112285U (en) |
-
1984
- 1984-11-22 JP JP17737384U patent/JPS60112285U/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60112285U (en) | 1985-07-30 |
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