JPS6130436B2 - - Google Patents

Info

Publication number
JPS6130436B2
JPS6130436B2 JP52081314A JP8131477A JPS6130436B2 JP S6130436 B2 JPS6130436 B2 JP S6130436B2 JP 52081314 A JP52081314 A JP 52081314A JP 8131477 A JP8131477 A JP 8131477A JP S6130436 B2 JPS6130436 B2 JP S6130436B2
Authority
JP
Japan
Prior art keywords
region
impurity concentration
conductivity
semiconductor
diode element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52081314A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5416184A (en
Inventor
Hiroshi Sakuma
Toshuki Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP8131477A priority Critical patent/JPS5416184A/ja
Publication of JPS5416184A publication Critical patent/JPS5416184A/ja
Publication of JPS6130436B2 publication Critical patent/JPS6130436B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies

Landscapes

  • Bipolar Integrated Circuits (AREA)
JP8131477A 1977-07-06 1977-07-06 Semiconductor diode element Granted JPS5416184A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8131477A JPS5416184A (en) 1977-07-06 1977-07-06 Semiconductor diode element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8131477A JPS5416184A (en) 1977-07-06 1977-07-06 Semiconductor diode element

Publications (2)

Publication Number Publication Date
JPS5416184A JPS5416184A (en) 1979-02-06
JPS6130436B2 true JPS6130436B2 (enrdf_load_stackoverflow) 1986-07-14

Family

ID=13742923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8131477A Granted JPS5416184A (en) 1977-07-06 1977-07-06 Semiconductor diode element

Country Status (1)

Country Link
JP (1) JPS5416184A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56105921U (enrdf_load_stackoverflow) * 1980-01-16 1981-08-18
GB2089119A (en) * 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
DE4201276C1 (enrdf_load_stackoverflow) * 1992-01-18 1993-06-17 Daimler-Benz Aktiengesellschaft, 7000 Stuttgart, De

Also Published As

Publication number Publication date
JPS5416184A (en) 1979-02-06

Similar Documents

Publication Publication Date Title
JP2893053B2 (ja) 集積化された電子装置における電荷キャリアの寿命の局所化される短縮のための処理、および電荷キャリアの寿命の局所化される短縮を伴う集積化された電子装置
US4620211A (en) Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices
US5024965A (en) Manufacturing high speed low leakage radiation hardened CMOS/SOI devices
JP3471823B2 (ja) 絶縁ゲート型半導体装置およびその製造方法
CN100474612C (zh) 使用梨晶生长的碳化硅漂移层形成功率半导体器件的方法和由此形成的功率半导体器件
US5444271A (en) Conductivity-modulated semiconductor device with high breakdown voltage
KR20020084685A (ko) 순방향 및 역방향 차단 장치 및 그 제조 방법
US10062681B2 (en) SOI integrated circuit equipped with a device for protecting against electrostatic discharges
KR100956241B1 (ko) 공핍가능한 콜렉터 컬럼을 가진 바이폴라 방법 및 구조
JP3958388B2 (ja) 半導体装置
KR100503905B1 (ko) 반도체장치 및 그 제조방법
US4807012A (en) IC which eliminates support bias influence on dielectrically isolated components
JP3472476B2 (ja) 半導体装置及びその駆動方法
CA1126875A (en) Dielectrically-isolated integrated circuit complementary transistors for high voltage use
JP2022117495A (ja) シリコンカーバイド垂直導通ｍｏｓｆｅｔ装置及びその製造方法
JPH0786580A (ja) 高耐圧半導体装置
US6759303B1 (en) Complementary vertical bipolar junction transistors fabricated of silicon-on-sapphire utilizing wide base PNP transistors
JPH0648691B2 (ja) 半導体デバイス及びその製造方法
KR20140080741A (ko) 비대칭 2-단자 바이리스터 소자와 그 제작 방법
JP2024109061A (ja) 改善された性能を有するシリコンカーバイドパワーｍｏｓｆｅｔデバイス及びその製造プロセス
JPS6130436B2 (enrdf_load_stackoverflow)
US5976942A (en) Method of manufacturing a high-voltage semiconductor device
EP4584823A1 (en) Silicon carbide lateral power semiconductor device
JP2002359373A (ja) 半導体装置及びその製造方法
US6787816B1 (en) Thyristor having one or more doped layers