JPS6130424B2 - - Google Patents
Info
- Publication number
- JPS6130424B2 JPS6130424B2 JP55144923A JP14492380A JPS6130424B2 JP S6130424 B2 JPS6130424 B2 JP S6130424B2 JP 55144923 A JP55144923 A JP 55144923A JP 14492380 A JP14492380 A JP 14492380A JP S6130424 B2 JPS6130424 B2 JP S6130424B2
- Authority
- JP
- Japan
- Prior art keywords
- lid
- container
- substrate
- metal
- bonded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002184 metal Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000004020 conductor Substances 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 238000009413 insulation Methods 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Casings For Electric Apparatus (AREA)
- Die Bonding (AREA)
Description
【発明の詳細な説明】
本発明は、金属容器の基板上に支持された半導
体素子の電極への接続導体が基体に対向する容器
蓋体の頂部から引出される半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device in which a connection conductor to an electrode of a semiconductor element supported on a substrate of a metal container is drawn out from the top of a container lid facing a base.
このような半導体装置は特に接続導体に流れる
電流が大でその断面の大きい電力用半導体素子を
含むものに適している。第1図はその一例でキヤ
ンシールタイプと呼ばれるものであり、例えば銅
のような熱良導体の基板1の上には見えないが半
導体素子が固着されており、その素子の電極に接
続され導体2および3は金属製蓋体4に設けられ
たガラスハーメチツクシール体21および31を
介して外部に導出されている。このような金属基
板と金属蓋体とガラスシール体とよりなる容器に
よるメタルパツケージは、耐湿性、耐熱性の点で
底板上の半導体素子を絶縁物で封止し絶縁物上面
より接続導体を引出す、例えばプラスチツクパー
ケージよりも信頼性が高い。しかしこれに用いら
れるガラスシール体21,31は金属外環、ガラ
スならびに貫通導体の間の熱膨脹係数の整合が要
求されるため、第1図に示す接続導体2,3と蓋
体4、すなわち基板1との間の実効絶縁距離Lま
たはlを大きくすることには技術的な困難を生ず
る。また一つの金属外環内に2本の導体をガラス
で囲んで引出すことにも困難がある。従つて半導
体装置の高耐圧化のために導体の容器貫通部にお
ける絶縁距離を長くすることに制約があつた。 Such a semiconductor device is particularly suitable for a device including a power semiconductor element whose connecting conductor has a large current flowing through it and whose cross section is large. Fig. 1 shows an example of the so-called can seal type, in which a semiconductor element is fixed (not visible) on a substrate 1 made of a good thermal conductor such as copper, and a conductor 2 is connected to the electrode of the element. and 3 are led out to the outside via glass hermetic seals 21 and 31 provided on the metal lid 4. Such a metal package, which is a container consisting of a metal substrate, a metal lid, and a glass seal, seals the semiconductor element on the bottom plate with an insulator to ensure moisture resistance and heat resistance, and the connecting conductor is drawn out from the top surface of the insulator. , more reliable than, for example, plastic packaging. However, since the glass seal bodies 21 and 31 used for this are required to match the thermal expansion coefficients between the metal outer ring, the glass, and the through conductor, the connection conductors 2 and 3 and the lid body 4 shown in FIG. Technical difficulties arise in enlarging the effective insulation distance L or l between the two. It is also difficult to surround two conductors with glass and draw them out within one metal outer ring. Therefore, in order to increase the withstand voltage of a semiconductor device, there are restrictions on increasing the insulation distance at the portion where the conductor penetrates the container.
本発明はこのような制約を除き、絶縁距離が長
くしかもメタルパツケージの良好な耐湿性、耐熱
性を備えた封止を行つた半導体装置を提供するこ
とを目的とする。 SUMMARY OF THE INVENTION An object of the present invention is to eliminate such limitations and provide a semiconductor device which is sealed with a long insulation distance and has good moisture resistance and heat resistance of a metal package.
この目的は半導体素子を支持する基板と主とし
て金属からなる蓋体とが気密結合され、素子の電
極への接続導体が基体に対向する蓋体頂部に備え
られたガラスハーメチツクシール体を介して容器
外に引出され、蓋体の側面を取囲みかつ蓋体の上
端より高く突き出た絶縁物の管を嵌め、該管と蓋
体で形成される凹部に絶縁物層を形成することに
よつて達成される。 The purpose of this is to hermetically connect the substrate that supports the semiconductor element and the lid mainly made of metal, and connect conductors to the electrodes of the element through a glass hermetic seal provided on the top of the lid facing the base. By fitting an insulating tube that is pulled out of the container, surrounding the sides of the lid and protruding higher than the top of the lid, and forming an insulating layer in the recess formed by the tube and the lid. achieved.
以下図面を引用して本発明の実施例について説
明する。第2、第3図は一つの実施例を示し、金
属基板1には従来用いられているガラスハーメチ
ツクシール体21,31を有する金属蓋体4が結
合されている。基板1に固着された半導体素子5
の電極に接続された導体51はシール体21の中
心導体2の凹部にかしめられ、他の導体52はシ
ール体31の中心導管3を貫通して外部へ引出さ
れた後、中心導管3によつて気密にかしめられて
いる。この金属蓋体4の側面に密着させて合成樹
脂あるいはセラミツクスからなる絶縁物の管6を
嵌める。この場合管6の上端が蓋体4のガラスシ
ール体21,31の金属外環の上端よりも高い位
置にあるように、管6の寸法を決める。この絶縁
物管6で囲まれた蓋体4およびシール体21,3
1の上方の空間に合成樹脂を注入して絶縁物層7
を形成する。これにより導体2,3と基板1との
間の実効絶縁距離は第1図に示すL,lより第3
図に示すL′,l′へと大幅に増大する。 Embodiments of the present invention will be described below with reference to the drawings. 2 and 3 show one embodiment, in which a metal cover 4 having conventionally used glass hermetic seals 21 and 31 is coupled to a metal substrate 1. Semiconductor element 5 fixed to substrate 1
The conductor 51 connected to the electrode is caulked into the recess of the center conductor 2 of the seal body 21, and the other conductor 52 is passed through the center conduit 3 of the seal body 31 and pulled out to the outside, and then inserted into the center conduit 3. It is sealed and caulked airtight. An insulating tube 6 made of synthetic resin or ceramics is fitted in close contact with the side surface of the metal lid 4. In this case, the dimensions of the tube 6 are determined so that the upper end of the tube 6 is located at a higher position than the upper ends of the metal outer rings of the glass seal bodies 21, 31 of the lid body 4. Lid body 4 and seal bodies 21 and 3 surrounded by this insulator tube 6
Synthetic resin is injected into the space above 1 to form an insulating layer 7.
form. As a result, the effective insulation distance between the conductors 2 and 3 and the substrate 1 is 300 mm from L and l shown in FIG.
It increases significantly to L′ and l′ shown in the figure.
第4図、第5図は異なる実施例を示もので、第
2図、第3図と同様な部分には同じ符号が付され
ている。第4図に示す例は、第2、第3図の絶縁
物管6の代りに金属管61を用い、絶縁物層7を
注入したものであり、絶縁距離に対する要求が小
さい場合に適用でき、容器の補強効果が大きい。
第5図に示す例は、例えばシリコーンゴムのよう
な弾性のある絶縁物キヤツプ8によつて蓋体4を
覆つたものであり、上述の2例に比較して製造工
数がより低減される。 4 and 5 show different embodiments, and the same parts as in FIGS. 2 and 3 are given the same reference numerals. The example shown in FIG. 4 uses a metal tube 61 instead of the insulator tube 6 in FIGS. 2 and 3, and injects an insulator layer 7, and can be applied when the requirement for insulation distance is small. Great for reinforcing the container.
In the example shown in FIG. 5, the lid 4 is covered with an elastic insulating cap 8 such as silicone rubber, and the number of manufacturing steps is further reduced compared to the above two examples.
以上述べたように本発明は従来用いられている
ガラスハーメチツクシール体を備えたメタルパツ
ケージ半導体装置容器の引出導体の絶縁性能を容
器蓋体およびシール体のガラス部を覆う絶縁物層
の付加によつて向上させるものであり、入手しや
すい容器部材をそのまま利用でき、装置の取付寸
法は従来の容器と、同一であり、外形寸法にも大
きな変化がなく規格寸法に納めることも可能であ
るので、高耐圧、高信頼性で使いやすい半導体装
置を低い価格で造ることができる。 As described above, the present invention improves the insulation performance of the lead conductor of a conventional metal package semiconductor device container equipped with a glass hermetic seal by adding an insulating layer covering the glass portion of the container lid and seal. It is possible to use easily available container parts as is, the installation dimensions of the device are the same as conventional containers, and the external dimensions do not change significantly and can be kept within standard dimensions. Therefore, it is possible to manufacture semiconductor devices with high voltage resistance, high reliability, and ease of use at a low cost.
第1図は従来のメタルパツケージ半導体装置の
一例の斜視図、第2図は本発明による半導体装置
の一実施例の断面図、第3図はその斜視図、第4
図、第5図はそれぞれ異なる実施例の断面図であ
る。
1……基板、21,31……ガラスハーメチツ
クシール体、4……蓋体、6,7,8……絶縁物
層。
FIG. 1 is a perspective view of an example of a conventional metal package semiconductor device, FIG. 2 is a sectional view of an embodiment of a semiconductor device according to the present invention, FIG. 3 is a perspective view thereof, and FIG.
5 are sectional views of different embodiments. DESCRIPTION OF SYMBOLS 1... Substrate, 21, 31... Glass hermetic seal body, 4... Lid body, 6, 7, 8... Insulator layer.
Claims (1)
器を構成し、この容器内の前記基板上に半導体素
子が一主面を下にして接着され、この素子の他方
の主面上に電極に接続された外部接続導体が金属
基板に対向する蓋体頂部に設けられたガラスハー
メチツクシール体を貫通して容器外に引き出され
るものにおいて、蓋体の側面を取囲みかつ蓋体の
上端より高く突き出た絶縁物の管を嵌め、該管と
蓋体で形成される凹部に絶縁物層を設けてなるこ
とを特徴とする半導体装置。1 A metal substrate and a cap-shaped lid are hermetically coupled to form a container, a semiconductor element is bonded with one main surface facing down on the substrate in the container, and a semiconductor element is bonded with one main surface facing down, and the other main surface of the element is bonded to the substrate. In cases where the external connection conductor connected to the electrode passes through a glass hermetic seal provided on the top of the lid facing the metal substrate and is drawn out of the container, the 1. A semiconductor device comprising: an insulating tube protruding higher than an upper end thereof; and an insulating layer provided in a recess formed by the tube and a lid.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55144923A JPS5769769A (en) | 1980-10-16 | 1980-10-16 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55144923A JPS5769769A (en) | 1980-10-16 | 1980-10-16 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5769769A JPS5769769A (en) | 1982-04-28 |
JPS6130424B2 true JPS6130424B2 (en) | 1986-07-14 |
Family
ID=15373358
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55144923A Granted JPS5769769A (en) | 1980-10-16 | 1980-10-16 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5769769A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03119331U (en) * | 1990-03-14 | 1991-12-09 | ||
JPH0574434U (en) * | 1992-03-12 | 1993-10-12 | 旭化成工業株式会社 | Extraction filter |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6263459A (en) * | 1985-09-13 | 1987-03-20 | Internatl Rectifier Corp Japan Ltd | Airtight terminal for semiconductor element |
US6037652A (en) * | 1997-05-29 | 2000-03-14 | Nec Corporation | Lead frame with each lead having a peel generation preventing means and a semiconductor device using same |
-
1980
- 1980-10-16 JP JP55144923A patent/JPS5769769A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03119331U (en) * | 1990-03-14 | 1991-12-09 | ||
JPH0574434U (en) * | 1992-03-12 | 1993-10-12 | 旭化成工業株式会社 | Extraction filter |
Also Published As
Publication number | Publication date |
---|---|
JPS5769769A (en) | 1982-04-28 |
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