JPS61291977A - Production of thin film of lower vanadium oxide - Google Patents
Production of thin film of lower vanadium oxideInfo
- Publication number
- JPS61291977A JPS61291977A JP13268285A JP13268285A JPS61291977A JP S61291977 A JPS61291977 A JP S61291977A JP 13268285 A JP13268285 A JP 13268285A JP 13268285 A JP13268285 A JP 13268285A JP S61291977 A JPS61291977 A JP S61291977A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- reducing gas
- vanadium oxide
- hydrated gel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1229—Composition of the substrate
- C23C18/1245—Inorganic substrates other than metallic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1254—Sol or sol-gel processing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1275—Process of deposition of the inorganic material performed under inert atmosphere
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Dispersion Chemistry (AREA)
- Chemically Coating (AREA)
Abstract
Description
【発明の詳細な説明】
〔利用される技術分野〕
この発明はバナジウム低級酸化物の薄膜を形成至は表面
処理のために用いられる。DETAILED DESCRIPTION OF THE INVENTION [Field of Application] The present invention is used for forming thin films of vanadium lower oxides and for surface treatment.
従来メタバナジン酸アンモン(NH4VO3)あるいは
VzOs粉末をNH3ガス、1乃至20倍(バナジウム
原料モル比)で450乃至700℃で1乃至6時間還元
することKよりV2O3粉末を得ることが特開昭49−
47294号によって知られているがこの方法は薄膜が
形成できない。Conventionally, it has been disclosed in JP-A-49-1 that V2O3 powder can be obtained from K by reducing ammonium metavanadate (NH4VO3) or VzOs powder with NH3 gas at 1 to 20 times (vanadium raw material molar ratio) at 450 to 700°C for 1 to 6 hours.
Although this method is known from No. 47294, a thin film cannot be formed.
またVzOs水和ゲルを絶縁基体に塗布し、単に乾燥さ
せる方法は特公昭57−29502号によって知られて
いる。このときVzOs水和ゲル中に元より含まれてい
るV4+イオンにより導電性が付与さグル製造時の温度
管理を極めて厳密に高温度にしなければならず、高温度
にするとV2O5水和グルの回収量が低下し、コスト高
となる。また塗布乾燥後の膜の形成については、この特
公昭57−29502号には記述なく、追試の結果、そ
のま又では膜の形成はな(、別に造膜剤の゛添加を要す
る。Furthermore, a method of coating a VzOs hydrated gel on an insulating substrate and simply drying it is known from Japanese Patent Publication No. 57-29502. At this time, conductivity is imparted by the V4+ ions originally contained in the VzOs hydrated gel, and the temperature must be extremely strictly controlled at a high temperature during the production of the gel. The quantity will decrease and the cost will increase. Further, regarding the formation of a film after coating and drying, there is no description in this Japanese Patent Publication No. 57-29502, and as a result of additional tests, it was found that no film was formed as it was (although a separate film-forming agent must be added).
またV2O5と還元剤としての金属を共に減圧容器に入
れ、これらを昇華させて、気体の状態において還元して
生成したVO2、V2O3などを冷却固化したものを取
り出す方法が特開昭50−7289〔解決しようとする
問題点〕
この発明は方法が簡便で、低温度の還元処理により、基
体表面にバナジウム低級酸化物膜を形成するためである
。In addition, there is a method of putting V2O5 and a metal as a reducing agent together in a vacuum container, sublimating them, reducing them in a gaseous state, and taking out the generated VO2, V2O3, etc., which are cooled and solidified, as described in JP-A-50-7289 [ Problems to be Solved] The present invention is simple and uses a low-temperature reduction treatment to form a vanadium lower oxide film on the surface of the substrate.
この発明はVzOs水和ゲルを基体に塗布し、70乃至
700″C好ましくは250乃至700t″の還元ガス
気流中において、約30分乃至3時間加熱乃至焼成して
、前記基体上の塗布されたV2O5水和ゲルをV、OS
より低級のバナジウム低級酸化物薄膜とすることを特徴
とするバナジウム低級酸化物薄膜の製法とすることによ
って問題点を解決した。In this invention, a VzOs hydrated gel is applied to a substrate, and heated or baked for about 30 minutes to 3 hours in a reducing gas flow of 70 to 700"C, preferably 250 to 700t", to remove the applied VzOs gel on the substrate. V2O5 hydrated gel V,OS
The problem was solved by creating a method for manufacturing a vanadium lower oxide thin film, which is characterized by forming a lower vanadium oxide thin film.
この発明の方法を更に具体的に!52明する。More specifically about the method of this invention! 52 will be revealed.
a)Vへ水和ゲルの製法
VA水和ゲルを得る方法としては%罠限定はないが例え
ばV2O5をるつぼに入れ、これを溶融し、溶融温度よ
りも100乃至150t−高い温度を若干保持し、均一
な溶融状態とした後、素早く純水若くは水圧アセントン
を10乃至30%程度含有する液体中に流し込んでV2
O5水和ゲルを得、これを使用するに先立ってVzOs
10f’/ l濃度に希釈する。a) Production method of hydrated gel to V There is no % limit to the method of obtaining hydrated gel, but for example, V2O5 is placed in a crucible, melted, and maintained at a temperature slightly higher than the melting temperature by 100 to 150 t. After making it into a uniform molten state, it is quickly poured into pure water or a liquid containing about 10 to 30% of hydraulic acentone.
O5 hydrated gel was obtained and VzOs was added prior to use.
Dilute to a concentration of 10 f'/l.
b)塗布すべき基体としては磁気製品素材、写真製品素
材などのガラス、セラミック、合成樹脂板などで融点が
70″C以上のものを用いる。b) The substrate to be coated is a glass, ceramic, synthetic resin plate, etc., such as a magnetic product material or a photographic product material, and has a melting point of 70''C or higher.
C)塗布方法としては、刷子又はローラ塗り、スプレー
、静電塗装、浸漬など、この発明の塗布方法に入るもの
とする。C) Coating methods include brush or roller coating, spraying, electrostatic coating, dipping, etc., which are included in the coating methods of this invention.
d)乾燥及び加熱する方法に用いる加熱器は外気と遮断
できるものであれば特に限定はなく、目的とする加熱温
度に調整できるものがよく、電気炉が一番便利である。d) The heater used in the drying and heating method is not particularly limited as long as it can be isolated from the outside air, and it is best to use one that can adjust the heating temperature to the desired temperature, and an electric furnace is most convenient.
加熱温度は、前記基体の溶融温度以下とする。The heating temperature is below the melting temperature of the base.
先ず前記b)項に記載した基体の表面に、前記a)項の
V2O1S水和ゲルをC)項に示した塗布方法により塗
布する。First, the V2O1S hydrated gel described in item a) is applied to the surface of the substrate described in item b) by the coating method shown in item C).
前記V2O11水和ゲルを塗布した基体を加熱炉中に入
れ、加熱炉中の温度を前記基体の溶融乃至は変形温度以
下に調整し、30分乃至3時間加熱し、基体表面中のV
2O11水和ゲル層を還元して、V2O3、V2O4な
どのバナジウム低級酸化物膜を基体表面に形成させる。The substrate coated with the V2O11 hydrated gel is placed in a heating furnace, the temperature in the heating furnace is adjusted to below the melting or deformation temperature of the substrate, and heated for 30 minutes to 3 hours to eliminate V in the surface of the substrate.
The 2O11 hydrated gel layer is reduced to form a vanadium lower oxide film such as V2O3 or V2O4 on the surface of the substrate.
先ずこの方法においては基体にv2o、水和ゲルを塗布
する方法を採用しているため塗布し易く、殊にグル状で
あるため、ガラス、セラミック表面は勿論のこと、各種
のプラスチック表面にも容易に塗布できる。またV2O
5は非結晶かつ数10OAの超微粒子であるため活性度
が高く、これと接触させる還元ガスは少量で、還元温度
も比較的低温で還元時間も短か(てよく、基体の選択の
自由度がきわめて高く、しかも生成したバナジウム。低
級酸化物は基体表面において膜となる。First of all, this method uses a method of applying V2O and hydrated gel to the substrate, so it is easy to apply, and since it is in a glue form, it can be applied not only to glass and ceramic surfaces, but also to various plastic surfaces. Can be applied to. Also V2O
Since 5 is an amorphous ultrafine particle with a size of several tens of OA, it has a high activity, and only a small amount of reducing gas is brought into contact with it, and the reduction temperature is relatively low and the reduction time is short. The vanadium produced is extremely high, and the lower oxide forms a film on the surface of the substrate.
しかも還元反応は常圧(勿論、加圧、減圧下でも反応す
る)で行えるため、多量連続反応も可能となる。Moreover, since the reduction reaction can be carried out at normal pressure (of course, the reaction can also be carried out under increased pressure or reduced pressure), continuous reaction in large quantities is also possible.
殊K v2o、水和ゲル中の■4−Fイオンには全く依
存しないため、VzOs水和ゲルの製造には特にその製
法に限定なく、もつともV2O5水和ゲルの収率のよい
方法が選択できるためコストの低廉が計れ、極めて有用
性の高いものである。In particular, since it does not depend at all on K v2o and 4-F ions in the hydrated gel, there are no particular limitations on the manufacturing method for producing VzOs hydrated gel, and any method that provides a good yield of V2O5 hydrated gel can be selected. Therefore, the cost is low and it is extremely useful.
実験例l
V2O550fを磁器製るつぼに入れ、電気炉内で30
分間800″”c (V2O5の融点690℃)K保ち
その後、この溶湯なlItの純水中に素早く流し込み、
V2O5水和ゲルを得、これをV2O5濃度1%に希釈
し、基体として磁器製板(50x50r1りを用いこの
表面に20X201EIの面積に厚さ100μmになる
ように上記溶液を塗布し、自然乾燥の後、電気炉内にH
2ガスを10xl/mで供給しながら、1時間、570
″Cで反応後、室温まで温度を低下させた後、基体表面
に生成した膜をX線回折によって大部分がV2O3の薄
膜と確認した。Experimental example 1 V2O550f was placed in a porcelain crucible and heated for 30 minutes in an electric furnace.
The melting point of V2O5 is kept at K for 800""c (690°C) for a minute. Then, the molten metal is quickly poured into lIt pure water.
Obtain a V2O5 hydrated gel, dilute it to a V2O5 concentration of 1%, use a porcelain plate (50x50R1) as a substrate, apply the above solution to the surface to a thickness of 100 μm over an area of 20x201EI, and let it air dry. After that, H is placed in the electric furnace.
570 for 1 hour while supplying 2 gas at 10xl/m
After the reaction at C, the temperature was lowered to room temperature, and the film formed on the surface of the substrate was confirmed by X-ray diffraction to be a thin film made mostly of V2O3.
実験例2
実験例1と同じ基体に同様K V2O5水和ゲルを塗布
したものを、前記と同じ電気炉にNHaガスを10 m
l / tinで供給しながら380℃でl゛時間反応
させたところ基体表面K VO2の薄膜が形成された。Experimental Example 2 The same substrate as in Experimental Example 1 was coated with KV2O5 hydrated gel, and NHa gas was heated to 10 m in the same electric furnace as above.
When the reaction was carried out at 380° C. for 1 hour while being supplied at 1/2, a thin film of KVO2 was formed on the surface of the substrate.
実験例3
実験例1.2と同一のものを還元ガスをSO2ガスとし
、5 xi / mの気流中で240″C2時間反応さ
せたところV6O13とV3O7が混合している薄膜が
得られた。Experimental Example 3 When the same product as in Experimental Example 1.2 was reacted for 2 hours at 240''C in an air flow of 5 xi/m using SO2 gas as the reducing gas, a thin film containing a mixture of V6O13 and V3O7 was obtained.
実験例4(比較実験〕
前記実験例1乃至3と同一のものを還元ガスを用いるこ
となく、空気中で30分、300t″で反応させたとこ
ろV2O5の薄膜が形成された。Experimental Example 4 (Comparative Experiment) When the same material as in Experimental Examples 1 to 3 was reacted in air at 300 t'' for 30 minutes without using reducing gas, a thin film of V2O5 was formed.
乾燥されたものは、表面に膜は形成されず、非結晶質■
205が耐着形成された。When dried, no film is formed on the surface and it is amorphous.
205 was formed to resist adhesion.
また還元ガスとしてNH,、H2、SO2を用い還元温
度と基体表面に生成される酸化物との凡その関係は次表
忙示す通りである。Further, using NH, H2, and SO2 as reducing gases, the approximate relationship between the reduction temperature and the oxides produced on the substrate surface is shown in the following table.
以上 手続補正書(自発) 昭和60年8月−一日that's all Procedural amendment (voluntary) August 1985 - 1st
Claims (1)
00℃好ましくは250乃至700℃の還元ガス気流中
において、約30分乃至3時間加熱乃至焼成して、前記
基体上の塗布されたV_2O_5水和ゲルをV_2O_
5より低級のバナジウム低級酸化物薄膜とするバナジウ
ム低級酸化物薄膜の製法。 2)前記還元ガスとしてNH_3ガス、N_2ガス、H
_2ガス、SO_2のうちの一種若くはこのうちの二種
以上の混合ガスを用いる方法よりなる特許請求の範囲第
1項記載のバナジウム低級酸化物薄膜の製法。[Claims] 1) Apply V_2O_5 hydrated gel to a substrate,
The V_2O_5 hydrated gel coated on the substrate is heated or baked in a reducing gas stream at 00°C, preferably 250 to 700°C, for about 30 minutes to 3 hours to convert the V_2O_5 hydrated gel coated on the substrate to V_2O_
A method for manufacturing a vanadium lower oxide thin film, which is a vanadium lower oxide thin film having a lower grade than 5. 2) As the reducing gas, NH_3 gas, N_2 gas, H
2. A method for producing a vanadium lower oxide thin film according to claim 1, which comprises using one or more mixed gases of _2 gas and SO_2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60132682A JPH0676667B2 (en) | 1985-06-18 | 1985-06-18 | Manufacturing method of vanadium lower oxide thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60132682A JPH0676667B2 (en) | 1985-06-18 | 1985-06-18 | Manufacturing method of vanadium lower oxide thin film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61291977A true JPS61291977A (en) | 1986-12-22 |
JPH0676667B2 JPH0676667B2 (en) | 1994-09-28 |
Family
ID=15087051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60132682A Expired - Lifetime JPH0676667B2 (en) | 1985-06-18 | 1985-06-18 | Manufacturing method of vanadium lower oxide thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0676667B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02236284A (en) * | 1989-03-09 | 1990-09-19 | Catalysts & Chem Ind Co Ltd | Formation of metal oxide film |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4947294A (en) * | 1972-09-06 | 1974-05-07 | ||
JPS51147281A (en) * | 1975-06-13 | 1976-12-17 | Hitachi Ltd | Manufacturing process for thin film switching element |
-
1985
- 1985-06-18 JP JP60132682A patent/JPH0676667B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4947294A (en) * | 1972-09-06 | 1974-05-07 | ||
JPS51147281A (en) * | 1975-06-13 | 1976-12-17 | Hitachi Ltd | Manufacturing process for thin film switching element |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02236284A (en) * | 1989-03-09 | 1990-09-19 | Catalysts & Chem Ind Co Ltd | Formation of metal oxide film |
Also Published As
Publication number | Publication date |
---|---|
JPH0676667B2 (en) | 1994-09-28 |
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