JPS61288457A - Manufacture of multilayer semiconductor device - Google Patents

Manufacture of multilayer semiconductor device

Info

Publication number
JPS61288457A
JPS61288457A JP13101485A JP13101485A JPS61288457A JP S61288457 A JPS61288457 A JP S61288457A JP 13101485 A JP13101485 A JP 13101485A JP 13101485 A JP13101485 A JP 13101485A JP S61288457 A JPS61288457 A JP S61288457A
Authority
JP
Japan
Prior art keywords
semiconductor
form
plane
wafer
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13101485A
Inventor
Takashi Kato
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13101485A priority Critical patent/JPS61288457A/en
Publication of JPS61288457A publication Critical patent/JPS61288457A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657Stacked arrangements of devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06513Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps

Abstract

PURPOSE:To contrive the improvement in integration by forming active elements in a semiconductor layer and passive elements in an insulator layer mainly among the side planes of a multilayer semiconductor chip and by connecting those so as to eliminate the necessity of individually providing an intermediate connection circuit for connecting the chips organically. CONSTITUTION:Elements 2 are formed on one side of a semiconductor wafer 1 and another side of this semiconductor wafer 1 is polished to reduce the thickness. Two of such wafers and a conductive film 3 of silver paste or the like are bonded mutually to form a set 4 of the semiconductor wafers 1. Then, plural sets of such semiconductor wafer 1 sets 4 are bonded to form a wafer laminated body 6 comprising the sets of multilayer semiconductor devices. This wafer laminated body 6 is sliced by each set of multilayer semiconductor device to form a multilayer semiconductor device chip 7. Next the side plane of this multilayer semiconductor device chip is polished to expose the plane where the semiconductor layer 1, the conductive film 3, another semiconductor layer 1, and an insulator layer 5 are arranged in this order with a stripe form. In the semiconductor layer 1 of this stripe form plane, active elements 9 are formed mainly. In the insulator layer 5 of the stripe form plane, passive elements 10 are formed and these passive elements 10, said active elements 9 and other wiring 11 are connected with one another.
JP13101485A 1985-06-17 1985-06-17 Manufacture of multilayer semiconductor device Pending JPS61288457A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13101485A JPS61288457A (en) 1985-06-17 1985-06-17 Manufacture of multilayer semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13101485A JPS61288457A (en) 1985-06-17 1985-06-17 Manufacture of multilayer semiconductor device

Publications (1)

Publication Number Publication Date
JPS61288457A true JPS61288457A (en) 1986-12-18

Family

ID=15047968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13101485A Pending JPS61288457A (en) 1985-06-17 1985-06-17 Manufacture of multilayer semiconductor device

Country Status (1)

Country Link
JP (1) JPS61288457A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9401183B2 (en) 1997-04-04 2016-07-26 Glenn J. Leedy Stacked integrated memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9401183B2 (en) 1997-04-04 2016-07-26 Glenn J. Leedy Stacked integrated memory device

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