JPS61288066A - Target and its production - Google Patents

Target and its production

Info

Publication number
JPS61288066A
JPS61288066A JP12801785A JP12801785A JPS61288066A JP S61288066 A JPS61288066 A JP S61288066A JP 12801785 A JP12801785 A JP 12801785A JP 12801785 A JP12801785 A JP 12801785A JP S61288066 A JPS61288066 A JP S61288066A
Authority
JP
Japan
Prior art keywords
target
target material
sputtering
thin strip
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12801785A
Other languages
Japanese (ja)
Inventor
Ryoichi Shibata
良一 柴田
Hisanobu Okamura
久宣 岡村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Proterial Ltd
Original Assignee
Hitachi Ltd
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Metals Ltd filed Critical Hitachi Ltd
Priority to JP12801785A priority Critical patent/JPS61288066A/en
Publication of JPS61288066A publication Critical patent/JPS61288066A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain a target wherein the water cooling effect is sufficient and the generation of a crack is less and the sputtering velocity is large by utilizing amorphous C and bonding a thin strip made of metal to a target material used in the thin film formation due to the sputtering. CONSTITUTION:After coating C of an amorphous state on one side of a target material used in the thin film formation, a metallic or alloy thin strip is mounted thereon and press-contacted at high temp. to remove C and the thin strip is bonded on the target material to obtain a target. The used thin strip may be nearly the same shape as one side of the target material and may be divided into several pieces and combined with each other. C of the amorphous state has such a role that the joint of ceramic or an intermetallic compd. and metal or alloy is reinforced. In this method, the cooling effect of the target is made large and the bonding strength is large and therefore it is stable even in the high-velocity sputtering. As the thin strip, the following material is selected which is excellent in the wetting characteristics for a material having low m.p. such as In and solder and can be easily joined to oxygen free Cu used in a supporting plate at low temp.

Description

【発明の詳細な説明】 ・(産業上の利用分野) 本発明はスパッタリング等により基板表面に薄膜を形成
する際に用いられるターゲットに関する。
Detailed Description of the Invention - (Industrial Application Field) The present invention relates to a target used when forming a thin film on a substrate surface by sputtering or the like.

ターゲットはイオンによって、その表面から原子状に材
料がはじき出されてバイアス電圧により基板上に付着す
る。
Material is ejected from the surface of the target in atomic form by ions, and is deposited on the substrate by a bias voltage.

(従来の技術) スパッタリングにおいてターゲットは常に激しいイオン
ボンバードにさらされて非常な高温になる。
(Prior Art) In sputtering, a target is constantly exposed to intense ion bombardment and becomes extremely hot.

通常の低速のスパッタリング時では昇温はさほど激しく
なく、また靭性のある金属材料ターゲット材として使用
される場合が多かったため、ターゲットを支持板にボル
トやビスで固定することでことたりた時°期もあったが
、最近マグネトロンスパッタリングの適用によるターゲ
ットの局部的なイオンボンバード及びスパッタリング速
度の上昇によりターゲットの冷却は重要な問題となり、
支持板とターゲットの強固な接合は不可避の問題となっ
てきた。
During normal low-speed sputtering, the temperature rise was not so severe, and since tough metal materials were often used as target materials, it was a good idea to fix the target to the support plate with bolts or screws. However, recently, with the application of magnetron sputtering, target cooling has become an important issue due to local ion bombardment of the target and an increase in sputtering speed.
A strong bond between the support plate and the target has become an unavoidable problem.

また、ターゲット材についてもセラミック、金属間化合
物などの脆い材料が使用され、冷却なしで使用する場合
破損に至り易くなったこともあり、接合の重要性は増加
した。従来の接合にはインジウム、半田、銀ろう等によ
る接合が行われてきた。
Furthermore, the target materials used are brittle materials such as ceramics and intermetallic compounds, which tend to break when used without cooling, which has increased the importance of bonding. Conventional bonding has been performed using indium, solder, silver solder, or the like.

また、これらの材料に0.2〜15μ−程度の裏打ちコ
ーティングを行なうことも行われてきている。
It has also been practiced to provide these materials with a backing coating of about 0.2 to 15 .mu.m.

(発明が解決しようとする問題点) 従来行われている接合方法のうち、インジウム。(Problem to be solved by the invention) Among the conventional bonding methods, indium.

半田、銀ろうを用いる方法は、溶湯状態のこれらの金属
とぬれ性が悪いターゲット材では用いることができない
。特にセラミックや金属間化合物では大部分がぬれ性が
悪い。また、これらに裏打ちを行なった場合でも、セラ
ミックや金属間化合物では裏打材とターゲット材との接
合強度が低く、高速のスパッタリングを行なった場合に
は接合部よりの剥離や割れが発生した。
Methods using solder or silver solder cannot be used with target materials that have poor wettability with these metals in a molten state. In particular, most ceramics and intermetallic compounds have poor wettability. Furthermore, even when these are lined, the bonding strength between the backing material and the target material is low when using ceramics or intermetallic compounds, and when high-speed sputtering is performed, peeling or cracking occurs from the bonded portion.

本発明は、このような問題点を解決し、水冷効果が十分
で割れ発生が少なくスパッタリング速度の大きいターゲ
ット及びその製造方法を提供することを目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to solve these problems and provide a target with a sufficient water cooling effect, less occurrence of cracks, and a high sputtering speed, and a method for manufacturing the same.

(問題点を解決するための手段) 薄膜形成に使用されるターゲット材の片面に非晶質状態
のCを付着せしめ、これを介して金属又は合金薄帯と高
温で加圧圧接を行なってCを除去し、接合した後支持板
と接着する。用いる薄帯はターゲット材の片面とほぼ同
形状であれば良く、いくつかに分割して組み合わせたも
のでも良い。
(Means for solving the problem) Amorphous C is adhered to one side of the target material used for thin film formation, and pressure welding is performed at high temperature with a metal or alloy ribbon through the amorphous carbon. is removed, bonded, and then glued to the support plate. The ribbon to be used may have approximately the same shape as one side of the target material, or may be divided into several parts and combined.

(作 用) 非晶質状態のCはセラミックや金属間化合物と金属又は
合金との接合を強固ならしめる役割を有する。この方法
でターゲット材と金属又は合金薄帯を接合することによ
りターゲットの冷却効果は大となり、また接合強度も大
であるため高速のスパッタリングにおいても安定してい
る。
(Function) Amorphous C has the role of strengthening the bond between ceramics or intermetallic compounds and metals or alloys. By joining the target material and the metal or alloy thin ribbon using this method, the cooling effect of the target is large, and the joint strength is also high, so it is stable even during high-speed sputtering.

金属又は合金薄帯には、インジウム、半田などの低融点
の材料とぬれ性が良く、容易に支持板に使用される無酸
素銅と低温で接合できるものを選定する。
For the metal or alloy ribbon, select one that has good wettability with low melting point materials such as indium and solder, and can be easily joined at low temperatures to oxygen-free copper used for the support plate.

これらの特徴は、第一にターゲットと支持板を接合させ
る場合のターゲットと支持板間、ターゲット材とCu 
−C板間の発生応力を大巾に減゛少させる。又同様に、
スパッタリング時の冷却効果を大ならしめ、ターゲット
材の発生応力にも高い接合強度で耐え待る。ターゲット
材と金属又は合金薄帯との熱膨張係数が大きく異なる場
合は、薄帯を分割させて膨張収縮を吸収することも有効
である。
These characteristics are: firstly, when the target and the support plate are joined, the distance between the target and the support plate, the target material and the Cu
- Greatly reduces the stress generated between the C plates. Similarly,
It increases the cooling effect during sputtering and withstands the stress generated in the target material with high bonding strength. If the thermal expansion coefficients of the target material and the metal or alloy ribbon are significantly different, it is also effective to divide the ribbon to absorb expansion and contraction.

(実施例1) スパッタリング装置は第1図に示すようなものである。(Example 1) The sputtering apparatus is as shown in FIG.

真空槽1の中にカソード2とアノード3がある。カソー
ド2には薄膜の材料となるターゲット4が支持板5に取
り付けてあり、アノード3にはMllを形成するべき基
板6が置いである。電極類は外部よりアノード3とカソ
ード2の間に1〜2KVの直流高電圧7が印加できる構
造となっている。真空槽1は高真空排気孔8とガス導入
パルプ9が設けである。
Inside the vacuum chamber 1 are a cathode 2 and an anode 3. A target 4, which is a thin film material, is attached to the cathode 2 on a support plate 5, and a substrate 6 on which Mll is to be formed is placed on the anode 3. The electrodes are structured so that a DC high voltage 7 of 1 to 2 KV can be applied between the anode 3 and the cathode 2 from the outside. The vacuum chamber 1 is equipped with a high vacuum exhaust hole 8 and a gas introduction pulp 9.

スパッタリングを始める場合は、先ず槽内を充分な高真
空に排気する。これは槽内の残留ガスが、スパッタリン
グ時に製作する膜の不純物材料とならないようにするた
めである。次に真空槽1を排気系に接続したまま、ガス
導入パルプ9よりArガスを導入し、真空槽内部がスパ
ッタリング可能な圧力になるようコントロールする。こ
のような状態で、カソード2とアノード3の間に直流の
高電圧を印加する。こうするとカソード2とアノード3
の間に存在するガスに電界がかかるようになる。
When starting sputtering, first evacuate the inside of the tank to a sufficiently high vacuum. This is to prevent residual gas in the tank from becoming an impurity material in the film produced during sputtering. Next, while the vacuum chamber 1 is connected to the exhaust system, Ar gas is introduced from the gas introduction pulp 9, and the pressure inside the vacuum chamber is controlled to a level that allows sputtering. In this state, a high DC voltage is applied between the cathode 2 and the anode 3. In this way, cathode 2 and anode 3
An electric field will be applied to the gas that exists between the two.

100+1111φのターゲットを使用するスパッタリ
ング装置に使用するターゲット材1100II1φ×6
丁を第1表に示す条件で、無酸素銅よりなる・支持板と
接合した。非晶質状態のCはスパッタリング法によりタ
ーゲット材に約5μmの厚さに裏打された。ホットプレ
ス機により、約3X10−3Torrの真空中で900
℃の温度で200 ko/ cn+’の圧力で加圧する
とCが飛んで接合される。第1表には従来の裏打のみに
よる方法と本発明の方法の作業条件と接合強度を示した
Target material 1100II 1φ x 6 used in sputtering equipment that uses a target of 100 + 1111φ
The plate was bonded to a support plate made of oxygen-free copper under the conditions shown in Table 1. C in an amorphous state was coated on the target material to a thickness of about 5 μm by sputtering. 900℃ in a vacuum of about 3X10-3Torr using a hot press machine.
When pressurized with a pressure of 200 ko/cn+' at a temperature of ℃, the carbon is blown away and the bond is formed. Table 1 shows the working conditions and bonding strengths of the conventional method using only backing and the method of the present invention.

A、0.々−H*t k  ら11.古枯妬 880.
其鼾(実施例2) 220φのMOSi2のターゲット材を、実施例1と同
様の方法で111111厚さのCu −C板と接合した
。この際42Ni−Feは巾100IIIIIlノもの
を用い、ターゲット材の円周部分はそれにそって切断し
、全体として220φとなるようにした。
A, 0. - H*t k et al. 11. Old jealousy 880.
Example 2 A MOSi2 target material of 220φ was joined to a Cu-C plate having a thickness of 111111 mm in the same manner as in Example 1. At this time, 42Ni-Fe having a width of 100III was used, and the circumferential portion of the target material was cut along the circumference so that the total diameter was 220φ.

本ターゲツ°トも実施例1と同様にインジウムを介して
支持板に接着した。このターゲットは10KWの電力を
投入しても割れなく使用できた。
As in Example 1, this target was also adhered to a support plate via indium. This target could be used without cracking even when 10KW of power was applied.

(発明の効果) 本発明は、以上述べたように、ターゲット材への十分な
冷却効果、接合部の強度、インジウム。
(Effects of the Invention) As described above, the present invention provides a sufficient cooling effect on the target material, the strength of the joint, and the use of indium.

半田などの良好な接合によりターゲット材、支持板間の
応力の減少をも伴ってスパッタリング速度の高速化9条
件の安定化をもたらし、成躾効率の大巾な向上をもたら
した。
Good bonding with solder and the like reduces the stress between the target material and the support plate, increasing the sputtering speed and stabilizing the nine conditions, resulting in a significant improvement in the production efficiency.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、スパッタリング装置の一例の要部断面図であ
る。
FIG. 1 is a sectional view of a main part of an example of a sputtering apparatus.

Claims (2)

【特許請求の範囲】[Claims] (1)ターゲット材に非晶質状態のCをコーティングし
た後、金属または合金薄帯をのせ高温で圧着させてCを
除き、ターゲット材に薄帯を接着させたことを特徴とす
るターゲット。
(1) A target characterized in that a target material is coated with C in an amorphous state, and then a metal or alloy ribbon is placed on the target material and pressed at high temperature to remove C, and the ribbon is adhered to the target material.
(2)ターゲット材に非晶質状態のCをコーティングし
た後、金属または、合金薄帯をのせ、高温で圧着させて
Cを除き、ターゲット材に薄帯を接着させてターゲット
を製造することを特徴とするターゲットの製造方法。
(2) After coating the target material with amorphous C, a thin metal or alloy ribbon is placed on the target material, the C is removed by pressure bonding at high temperature, and the ribbon is bonded to the target material to manufacture the target. Characteristic target manufacturing method.
JP12801785A 1985-06-14 1985-06-14 Target and its production Pending JPS61288066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12801785A JPS61288066A (en) 1985-06-14 1985-06-14 Target and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12801785A JPS61288066A (en) 1985-06-14 1985-06-14 Target and its production

Publications (1)

Publication Number Publication Date
JPS61288066A true JPS61288066A (en) 1986-12-18

Family

ID=14974424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12801785A Pending JPS61288066A (en) 1985-06-14 1985-06-14 Target and its production

Country Status (1)

Country Link
JP (1) JPS61288066A (en)

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