JPS61285729A - Manufacture of semiconductor device and resin mold member used therefor - Google Patents
Manufacture of semiconductor device and resin mold member used thereforInfo
- Publication number
- JPS61285729A JPS61285729A JP60127073A JP12707385A JPS61285729A JP S61285729 A JPS61285729 A JP S61285729A JP 60127073 A JP60127073 A JP 60127073A JP 12707385 A JP12707385 A JP 12707385A JP S61285729 A JPS61285729 A JP S61285729A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- sealing member
- base
- sealing
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、プリント配線などの導電性配線パターンが形
成された絶縁性基板上に搭載される半導体チップを樹脂
封止する半導体装置の製造方法とこれに用いる樹脂封止
部材に関する。Detailed Description of the Invention (Industrial Field of Application) The present invention relates to a method for manufacturing a semiconductor device in which a semiconductor chip mounted on an insulating substrate on which a conductive wiring pattern such as printed wiring is formed is sealed with a resin. and a resin sealing member used therefor.
（従来の技術）
近年、特に経済性、量産性の面から樹脂封止が半導体集
積回路のパッケージの大半を占めるようになってきてい
る。(Prior Art) In recent years, resin encapsulation has come to occupy the majority of packages for semiconductor integrated circuits, especially from the viewpoint of economy and mass production.
ここに、この種の樹脂封止技術を図に基づいて説明する
。Here, this type of resin sealing technology will be explained based on the drawings.
第３図はこの種の樹脂封止型半導体装置の製造方法の説
明図であり、図中、ｌはプリント配線基板（以下基板と
いう）、２は導電性配線パターン、３は半導体チップ、
４はチップ搭載部、５は金属細線、６は導電性配線パタ
ーン先端部、７はシール枠、８は樹脂封止部材、８′は
封止樹脂である。FIG. 3 is an explanatory diagram of the manufacturing method of this type of resin-sealed semiconductor device, in which l is a printed wiring board (hereinafter referred to as a board), 2 is a conductive wiring pattern, 3 is a semiconductor chip,
4 is a chip mounting part, 5 is a thin metal wire, 6 is a conductive wiring pattern tip, 7 is a sealing frame, 8 is a resin sealing member, and 8' is a sealing resin.
まず、第３図（ａ）に示されるように、基板１には導電
性配線パターン２が設けられると共にチップ搭載部４に
は半導体チップ３が搭載される。First, as shown in FIG. 3(a), a conductive wiring pattern 2 is provided on a substrate 1, and a semiconductor chip 3 is mounted on a chip mounting portion 4. As shown in FIG.
そこで、半導体チップ３のポンディングパッドと導電性
配線パターン先端部６は金属細線５によってワイヤボン
ディングされる。次いで、予め１５０００程度に基板１
及び半導体チップ３を加熱し、エポキシ樹脂を冷間成型
（加圧成型）して成る樹脂封止部材８、例えば、「Ｅベ
レッ）Ｊ （商品名・日東電気工業株式会社製）など
を基板上の予め設けられたシール枠７の中に載せる。Therefore, the bonding pad of the semiconductor chip 3 and the tip end portion 6 of the conductive wiring pattern are wire-bonded using the thin metal wire 5. Next, the substrate 1 is pre-coated with approximately 15,000 cells.
Then, a resin sealing member 8 made by heating the semiconductor chip 3 and cold-molding (pressure-molding) epoxy resin, such as "Eberet" J (trade name, manufactured by Nitto Electric Industry Co., Ltd.), is placed on the substrate. It is placed in a seal frame 7 provided in advance.
すると、第３図（ｂ）に示されるように、この封止部材
８は熱によりゲル化し、前記シール枠７内を充填した後
、硬化して前記半導体チップ３及び金属細線５を封止す
る。このようにして封止されたものが封止樹脂８′であ
る。そして、この封止樹脂８′の高さはシール枠７と前
記封止部材８の重量によって調節するようにしていた。Then, as shown in FIG. 3(b), the sealing member 8 gels due to heat, fills the inside of the sealing frame 7, and then hardens to seal the semiconductor chip 3 and the thin metal wire 5. . What is sealed in this way is the sealing resin 8'. The height of the sealing resin 8' is adjusted by the weight of the sealing frame 7 and the sealing member 8.
（発明が解決しようとする問題点）
しかしながら、上記した方法によれば、樹脂封止高さを
低（し、薄形化する場合、シール枠と金属細線の高さと
はほぼ同じ高さになってしまい封止樹脂の充填量の調整
が困難であった０例えば、充填量が少ない場合には金属
細線が露出してしまい、多い場合には樹脂封止高さが高
くなりすぎ薄形にできないという問題があった。(Problem to be solved by the invention) However, according to the above method, when the resin sealing height is reduced (and thinned), the height of the sealing frame and the thin metal wire are almost the same height. For example, if the filling amount is small, the thin metal wires will be exposed, and if the filling amount is too large, the resin sealing height will be too high, making it impossible to make it thin. There was a problem.
本発明は、上記問題点を除去するために、基板上の半導
体チップを薄形に樹脂封止可能であり、しかも、ワイヤ
ボンディング用の金属細線が露出するのを防止し、信鯨
性の高い樹脂封止を行うようにすることを目的とする。In order to eliminate the above-mentioned problems, the present invention enables semiconductor chips on a substrate to be thinly sealed with resin, and also prevents thin metal wires for wire bonding from being exposed, resulting in high reliability. The purpose is to perform resin sealing.
（問題点を解決するための手段）
本発明は、上記問題点を解決するために、基板に搭載し
た半導体チップの電気的配線を行った後樹脂封止部材を
樹脂封止部に載置し、薄形に樹脂封止するに際し、前記
樹脂封止部材には樹脂から成る基体上に高融点の薄膜状
の樹脂を形成しておき、この樹脂封止部材の基体が溶融
した場合に前記高融点の薄膜状の樹脂くよって封止樹脂
の表面を被覆するようにする。また、この半導体装置を
製造するために、樹脂から成る基体と、該基体上に形成
される高融点の薄膜状の樹脂から成る樹脂封止部材を用
いるようにする。(Means for Solving the Problems) In order to solve the above problems, the present invention provides a method in which a resin sealing member is placed on a resin sealing portion after electrical wiring of a semiconductor chip mounted on a substrate is performed. When resin-sealing into a thin shape, a thin film-like resin with a high melting point is formed on a base made of resin for the resin sealing member, and when the base of the resin sealing member melts, the high melting point resin is formed on the resin base. The surface of the sealing resin is coated with a thin film of melting point resin. Further, in order to manufacture this semiconductor device, a base made of resin and a resin sealing member made of a thin film-like resin with a high melting point formed on the base are used.
（作用）
本発明によれば、配線が完了した基板上の半導体チップ
上に、樹脂から成る基体の上面部に薄膜状の樹脂を形成
した樹脂封止部材を載置し、これを溶融して樹脂封止す
るようにしたので、溶融した封止樹脂の上表面は薄膜状
の樹脂によって被覆されることになり、半導体チップを
薄形に樹脂封止することができ、しかも、金属細線の露
出を防止することができる。(Function) According to the present invention, a resin sealing member in which a thin film of resin is formed on the upper surface of a base made of resin is placed on a semiconductor chip on a substrate on which wiring has been completed, and the resin sealing member is melted. Since resin encapsulation is used, the upper surface of the molten encapsulation resin is covered with a thin film of resin, making it possible to encapsulate the semiconductor chip thinly with resin, and to avoid exposing thin metal wires. can be prevented.
（実施例）
以下、本発明の実施例を図面を参照しながら詳細に説明
する。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.
第１図は本発明に係る半導体装置の製造方法の説明図で
ある。図中１乃至６は第３図に示される従来のものと同
様のものであり、説明を省略する。FIG. 1 is an explanatory diagram of a method for manufacturing a semiconductor device according to the present invention. 1 to 6 in the figure are similar to the conventional one shown in FIG. 3, and their explanation will be omitted.
１１は高さの低いシニル枠、１２は樹脂封止部材であり
、１２ａはその樹脂封止部材の基体、１２ｂはその基体
の上面部に形成される薄膜状の樹脂、１２ａ′は樹脂封
止部材の基体１２ａが溶融した封止樹脂、１２ｂ′はそ
の封止樹脂の上面部を被覆する薄膜状の樹脂膜である。11 is a low-height cylindrical frame, 12 is a resin sealing member, 12a is a base of the resin sealing member, 12b is a thin film of resin formed on the upper surface of the base, and 12a' is a resin sealing member. The base 12a of the member is a melted sealing resin, and 12b' is a thin resin film that covers the upper surface of the sealing resin.
次に、本発明の半導体装置の製造方法について説明する
。Next, a method for manufacturing a semiconductor device according to the present invention will be explained.
まず、第１図（ａ）に示されるように、基板１上には導
電性配線パターン２及び半導体チップ搭載部４が設けら
れる。そして、この搭載部４上には半導体チップ３を接
着剤、例えば、エポキシ樹脂などを用いて接着する。次
に半導体チップ３のポンディングパッドと導電性配線パ
ターン先端部６とをＡｕ線又はＡＥ線等の金属細線５に
よってワイヤボンディングを行う０次いで、積層した紙
にフェノール樹脂を含浸したフェノール樹脂板等を打ち
抜き加工によって枠状に加工した高さの低いシール枠１
１をエポキシ接着剤で接着固定する。First, as shown in FIG. 1(a), a conductive wiring pattern 2 and a semiconductor chip mounting section 4 are provided on a substrate 1. Then, the semiconductor chip 3 is bonded onto the mounting portion 4 using an adhesive such as an epoxy resin. Next, wire bonding is performed between the bonding pad of the semiconductor chip 3 and the conductive wiring pattern tip 6 using a thin metal wire 5 such as an Au wire or an AE wire. A low-height seal frame 1 made into a frame shape by punching
1 with epoxy adhesive.
その後、この基板をホットプレート（図示せず）に載せ
てｉｏｏ ” ｃ〜１５０ ’ Ｃ程度に加熱する。こ
の時、半導体チップ３も同等の温度に加熱される。Thereafter, this substrate is placed on a hot plate (not shown) and heated to about 150' C. At this time, the semiconductor chip 3 is also heated to the same temperature.
そこで、本発明に係る樹脂封止部材１２、つまり、例え
ば、エポキシ樹脂から成る基体１２ａとこの基体１２ａ
の上面部に形成される高融点の薄膜状の樹脂１２ｂとか
ら成る樹脂封止部材１２をセットされた半導体チップ３
上に載せて、加熱された基板１及び半導体チップ、３の
熱により溶融（ゲル化）する。Therefore, the resin sealing member 12 according to the present invention, that is, the base body 12a made of, for example, epoxy resin, and the base body 12a.
A semiconductor chip 3 set with a resin sealing member 12 consisting of a thin film-like resin 12b with a high melting point formed on the upper surface.
The substrate 1 and the semiconductor chips 3 are placed on top of each other and melted (gelled) by the heat of the heated substrate 1 and semiconductor chips 3.
すると、第１図＜ｂ＞に示されるように樹脂封止部材１
２は溶融してゲル状になり、シール枠１ 。Then, as shown in FIG. 1<b>, the resin sealing member 1
2 melts into a gel-like state and forms the seal frame 1.
１内に充填され樹脂封止される。この場合、シール枠１
１は低くしておいても、封止樹脂１２３′の上面を高融
点の薄膜状の樹脂膜１２ｂ′が覆うために金属細線５の
露出を防止することができ、樹脂封止部の薄形化を達成
することができる。1 and sealed with resin. In this case, seal frame 1
1, the thin metal wire 5 can be prevented from being exposed because the upper surface of the sealing resin 123' is covered with a thin resin film 12b' having a high melting point. can be achieved.
次に、本発明に係る樹脂封止部材について、更に詳細に
説明する。Next, the resin sealing member according to the present invention will be explained in more detail.
第２図は、本発明に係る樹脂封止部材の斜視図であり、
１２ａは、例えば、エポキシ樹脂を冷間成型（加圧成型
）して平板状に形成した基体であり、１２ｂはその基体
１２ａの上面部に形成される高融点の薄膜状の樹脂、例
えば、エポキシ樹脂であり、基体１２ａに塗布又はフィ
ルム状のものを接着して形成する。１２−１は樹脂封止
部に樹脂封止部材１２を載せて、ゲル状にした場合にこ
のゲル状の封止樹脂が樹脂封止部に均等に分布するよう
にするために形成された凹所である。FIG. 2 is a perspective view of a resin sealing member according to the present invention,
12a is a base formed into a flat plate by cold molding (pressure molding) epoxy resin, for example, and 12b is a thin film-like resin with a high melting point, such as epoxy, formed on the upper surface of the base 12a. It is made of resin and is formed by coating or adhering a film on the base 12a. 12-1 is a recess formed in order to ensure that when the resin sealing member 12 is placed on the resin sealing part and it is made into a gel, the gel-like sealing resin is evenly distributed over the resin sealing part. It is a place.
このように形成された樹脂封止部材１２を用いることに
より、上記した良好な樹脂封止を行うことができる。By using the resin sealing member 12 formed in this manner, the above-described good resin sealing can be performed.
次に、第４図は第２の樹脂封止の態様の説明図であり、
樹脂封止する場合に、前記したシール枠１１を設けるこ
となく樹脂封止部材１２を樹脂封止部に載置するだけで
樹脂封止部を樹脂封止できるようにしたものである。第
４図から明らかなように、基板１上の半導体チップ３の
電気的配線が完了すると、シール枠は設けることなく基
板部を加熱して、その上に樹脂封止部材１２を載せてゲ
ル状にする。すると、まず、基体１２ａが溶融して樹脂
封止すべき空間を下側から充填していく。Next, FIG. 4 is an explanatory diagram of the second resin sealing mode,
In the case of resin sealing, the resin sealing part can be resin-sealed simply by placing the resin sealing member 12 on the resin sealing part without providing the seal frame 11 described above. As is clear from FIG. 4, when the electrical wiring of the semiconductor chip 3 on the substrate 1 is completed, the substrate portion is heated without providing a sealing frame, and the resin sealing member 12 is placed on it to form a gel-like structure. Make it. Then, first, the base body 12a melts and fills the space to be sealed with resin from below.
すると基体１２ａの上面部に位置する高融点の薄膜状の
樹脂は上から覆うような状態となり、封止樹脂の上表面
を被覆する。この場合に金属線ｆｌｊ％５の露出が防止
されることは明らかである。Then, the high melting point thin film resin located on the upper surface of the base body 12a comes to cover the upper surface of the sealing resin. It is clear that in this case exposure of the metal line flj%5 is prevented.
第５図は、本発明の他の樹脂封止部材の説明図であり、
第５図（ａ）はこの樹脂封止部材の斜視図、第５図（ｂ
）はそのｂ−ｂ ’線の断面図である。FIG. 5 is an explanatory diagram of another resin sealing member of the present invention,
FIG. 5(a) is a perspective view of this resin sealing member, and FIG. 5(b) is a perspective view of this resin sealing member.
) is a sectional view taken along line bb'.
この実施例においては、エポキシ樹脂を冷間成型した基
体１２ａ上に高融点の薄膜状の樹脂１２ｂを有する点は
前記したものと同様であるが、この薄膜状の樹脂１２ｂ
の周辺部に基体１２ａがゲル化して樹脂封止される際に
その上面を覆う薄膜状の樹脂１２ｂが基板上に着接し易
く、かつゲル状の封止樹脂の流れ出しを防止する働きを
する突縁状の脚１２Ｃを設けるようにしたものである。This embodiment is similar to that described above in that it has a thin film-like resin 12b with a high melting point on a base body 12a which is cold-molded from an epoxy resin, but this thin film-like resin 12b
When the base body 12a is gelled and resin-sealed, a thin film-like resin 12b covering the upper surface of the base body 12a easily adheres to the substrate, and a protrusion is provided that serves to prevent the gel-like sealing resin from flowing out. A rim-like leg 12C is provided.
第６図は、この樹脂封止部材１２を用いて樹脂封止部を
樹脂封止した状態を示す第３の樹脂封止の態様の説明図
である。この図に示されるように、この実施例によると
、前記した脚１２Ｃが形成されているために、ゲル状の
封止樹脂が樹脂封止部の下方から順に充填され、側方に
流れ出ようとする時にはこの脚部１２Ｃの下部が加熱さ
れた基板上に着接しており、そのゲル状の封止樹脂の流
れ出しを阻止する。FIG. 6 is an explanatory view of a third resin-sealing mode showing a state in which the resin-sealed portion is resin-sealed using this resin-sealing member 12. As shown in this figure, since the leg 12C described above is formed in this embodiment, the gel-like sealing resin is filled sequentially from the bottom of the resin sealing part and tends to flow out to the side. At this time, the lower part of the leg portion 12C is in contact with the heated substrate to prevent the gel-like sealing resin from flowing out.
このように脚１２Ｃはゲル状の封止樹脂の流れ出しを有
効に阻止することができ、前記した基板上へシール枠を
設けなくともこの脚１２ｃがその機能を十分に果たすこ
とができる。なお、この脚１２ｃの長さ及び幅は基体１
２ａの体積、重量との関係で適宜設計することができる
。このように構成すると、シール枠をセットする場合に
比べて、作業工程の簡略化、作業時間の短縮化を図るこ
とができる。In this manner, the legs 12C can effectively prevent the gel-like sealing resin from flowing out, and the legs 12C can sufficiently perform this function without providing the sealing frame on the substrate. Note that the length and width of this leg 12c are the same as that of the base 1.
It can be designed as appropriate depending on the volume and weight of 2a. With this configuration, the work process can be simplified and the work time can be shortened compared to the case where a seal frame is set.
また、基体１２ａが溶融するとその熱で薄膜状の樹脂も
いくぶんか軟化するが高融点材料であるため溶融するこ
とはない。従って、封止樹脂の表面を自然に無理なく覆
うことになる。Further, when the base body 12a melts, the thin film resin also softens to some extent due to the heat, but since it is a high melting point material, it does not melt. Therefore, the surface of the sealing resin is naturally and comfortably covered.
なお、上記実施例においては、樹脂封止部材の基体及び
その上面部に形成する薄膜状の樹脂はエポキシ樹脂とし
て説明したが、これに限定されるものではなく、例えば
Ｓｉ系の樹脂など他の樹脂を用いてもよい。まだ、本発
明は上記実施例に限定されるものではなく、本発明の趣
旨に基づいて種々の変形が可能であり、これらを本発明
の範囲から排除するものではない。In the above embodiments, the thin film resin formed on the base and the upper surface of the resin sealing member was explained as an epoxy resin, but the resin is not limited to this, and other resins such as Si-based resin may be used. Resin may also be used. However, the present invention is not limited to the above embodiments, and various modifications can be made based on the spirit of the present invention, and these are not excluded from the scope of the present invention.
（発明の効果）
以上、詳細に説明したように本発明によれば、基板上に
設けられた半導体チップに電気的配線を行い、該半導体
チップの上に、樹脂から成る基体の上面に高融点の薄膜
状の樹脂を形成した樹脂封止部材を載置し、該樹脂封止
部材を溶融し、溶融された封止樹脂上に前記薄膜状の樹
脂を被覆する各工程を順に施すようにしたので、樹脂封
止部を薄形に封止することができる。この場合、ワイヤ
ボンディング用の金属細線の露出は確実に阻止すること
ができ、信頼性の高い薄形の樹脂封止を行うことができ
る。(Effects of the Invention) As described above in detail, according to the present invention, electrical wiring is provided to a semiconductor chip provided on a substrate, and a high-melting point A resin sealing member formed with a thin film of resin is placed, the resin sealing member is melted, and the melted sealing resin is coated with the thin film of resin. Therefore, the resin sealing portion can be sealed in a thin shape. In this case, exposure of the thin metal wire for wire bonding can be reliably prevented, and highly reliable thin resin sealing can be performed.
また、シール枠を基板にセットすることなく樹脂封止部
材のみによって樹脂封止を行う場合には、作業工程の簡
略化、作業効率の向上を図ることができる。In addition, when resin sealing is performed using only the resin sealing member without setting the seal frame on the substrate, it is possible to simplify the work process and improve work efficiency.
第り図は本発明の半導体装置の製造方法の説明図、第２
図は本発明の樹脂封止部材の斜視図、第３図は従来の半
導体装置の製造方法の説明図、第４図は本発明に係る第
２の樹脂封止の態様の説明図、第５図は本発明の他の樹
脂封止部材の説明図、第６図は本発明に係る第３の樹脂
封止の態様の説明図である。
１・・・基板、２・・・導電性配線パターン、３・・・
半導体チップ、４・・・半導体チップ搭載部、５・・・
金属細線、６・・・導電性配線パターン先端部、１１・
・・シール枠、１２・・・樹脂封止部材、１２ａ・・・
樹脂から成る基体、１２ｂ・・・高融点の薄膜状の樹脂
、１２ｃ・・・脚。Figure 2 is an explanatory diagram of the method for manufacturing a semiconductor device according to the present invention;
3 is an explanatory diagram of a conventional method for manufacturing a semiconductor device; FIG. 4 is an explanatory diagram of a second resin encapsulation mode according to the present invention; and FIG. The figure is an explanatory diagram of another resin sealing member of the present invention, and FIG. 6 is an explanatory diagram of a third resin sealing aspect according to the present invention. 1... Board, 2... Conductive wiring pattern, 3...
Semiconductor chip, 4... Semiconductor chip mounting part, 5...
Thin metal wire, 6...Tip of conductive wiring pattern, 11.
...Seal frame, 12...Resin sealing member, 12a...
Substrate made of resin, 12b... Thin film-like resin with high melting point, 12c... Legs.
Claims (2)
的配線を行い、 （ｂ）該半導体チップ上に樹脂から成る基体の上面に高
融点の薄膜状の樹脂を形成 して成る樹脂封止部材を載置し、 （ｃ）該樹脂封止部材を溶融し、 （ｄ）溶融された封止樹脂上に前記薄膜状の樹脂を被覆
する各工程を順に施してな ることを特徴とする半導体装置の製造 方法。(1), (a) electrical wiring is provided to a semiconductor chip provided on a substrate, and (b) a resin is formed by forming a thin film-like resin with a high melting point on the upper surface of a base made of resin on the semiconductor chip. It is characterized by sequentially performing the steps of placing a sealing member, (c) melting the resin sealing member, and (d) coating the melted sealing resin with the thin film resin. A method for manufacturing a semiconductor device.
点の薄膜状の樹脂とから成る樹脂封止部材。(2) A resin sealing member comprising a base made of resin and a thin film-like resin with a high melting point formed on the base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60127073A JPS61285729A (en) | 1985-06-13 | 1985-06-13 | Manufacture of semiconductor device and resin mold member used therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60127073A JPS61285729A (en) | 1985-06-13 | 1985-06-13 | Manufacture of semiconductor device and resin mold member used therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61285729A true JPS61285729A (en) | 1986-12-16 |
Family
ID=14950904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60127073A Pending JPS61285729A (en) | 1985-06-13 | 1985-06-13 | Manufacture of semiconductor device and resin mold member used therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61285729A (en) |
-
1985
- 1985-06-13 JP JP60127073A patent/JPS61285729A/en active Pending
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