JPS61279156A - Multiple chip module - Google Patents

Multiple chip module

Info

Publication number
JPS61279156A
JPS61279156A JP60120439A JP12043985A JPS61279156A JP S61279156 A JPS61279156 A JP S61279156A JP 60120439 A JP60120439 A JP 60120439A JP 12043985 A JP12043985 A JP 12043985A JP S61279156 A JPS61279156 A JP S61279156A
Authority
JP
Japan
Prior art keywords
chip
substrate
integrated circuit
chip module
heat transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60120439A
Other languages
Japanese (ja)
Other versions
JPH0342702B2 (en
Inventor
Hisashi Nakayama
中山 恒
Tadakatsu Nakajima
忠克 中島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60120439A priority Critical patent/JPS61279156A/en
Publication of JPS61279156A publication Critical patent/JPS61279156A/en
Publication of JPH0342702B2 publication Critical patent/JPH0342702B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15192Resurf arrangement of the internal vias
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To reduce heat resistance, by forming recess parts in a substrate, arranging integrated circuit chips in the recess parts, filling a part between the outer surface of a heat transfer body, which is mounted on each chip, and the side surface of each recess part with a sealing material, and reducing the heat transfer body between the chips. CONSTITUTION:Many recess parts 100 having a ring shape are provided on the side of a ceramic substrate 1 having wiring pins 12, on which chips 2 are mounted. The chip 2 is mounted on the bottom of each recess part 100 through a solder pad 14. Engineering change pad 21 for inspection or logical change is provided on a surface 110 of the substrate 1. In sealing the chip, a heat transfer body 3 is inserted in each recess part 100, and a part between a side wall 102 of each recess part 100 and the transfer body is filled with a sealing material 23 such as solder. Thus, the distance between the chip 2 and the heat transfer body 3 becomes small, and the heat resistance is reduced.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、複数の集積回路チップが搭載された配線基板
を単位モジュールとし、−個のモジュールあるいは複数
個のモジュールを含んで構成されるマルチチップモジュ
ールに係り、特に電子側算機に用いるに適したマルチチ
ップモジュールに関する。
[Detailed Description of the Invention] [Field of Application of the Invention] The present invention is directed to a multi-chip device that uses a wiring board on which a plurality of integrated circuit chips are mounted as a unit module, and includes - modules or a plurality of modules. The present invention relates to modules, and particularly to multi-chip modules suitable for use in electronic computers.

〔発明の背景〕[Background of the invention]

マルチチップモジュールにおけるチップ封じ法の公知例
としては、実公昭57−44700号公報に記載された
ようなチップをセラミック基板に設けた凹みの底に装着
し、これに凸状部を有するヒートシンクを押し当てる方
法と、特公昭57−48860号公報に記載の如くセラ
ミック基板全体を一体のキャップで覆い基板の周辺部で
封じをする方法とがある。
A known example of a chip sealing method in a multi-chip module is as described in Japanese Utility Model Publication No. 57-44700, in which a chip is mounted on the bottom of a recess provided in a ceramic substrate, and a heat sink having a convex portion is pressed onto the chip. There is a method in which the entire ceramic substrate is covered with an integral cap and the periphery of the substrate is sealed, as described in Japanese Patent Publication No. 57-48860.

前者における凹みは熱伝導グリースを保持するためのも
ので、チップの封じを目的としたものではなく、封じは
後者と同様、モジュール全体の封じを考えている。
The recesses in the former are intended to hold thermally conductive grease and are not intended to seal the chip, and the seal is intended to seal the entire module, similar to the latter.

モジュール全体を封じする場合、次のような問題点があ
る。
When sealing the entire module, there are the following problems.

まず、セラミック等の基板は、焼結時に与えられる熱履
歴のため、反っている。この基板の反りのため、集積回
路チップ8とキャップの内壁面との距離がチップごとに
不均一になる。このため、熱伝導グリースなどを用いチ
ップとキャップ内壁面との熱的結合を図る場合、熱伝導
グリースの層を厚くしなければならないチップがでてく
る。熱伝導グリース層を厚くするとチップとキャップ間
の熱コンダクタンスは非常に小さなものとなる。
First, substrates made of ceramic or the like are warped due to the thermal history given during sintering. Because of this substrate warping, the distance between the integrated circuit chip 8 and the inner wall surface of the cap becomes non-uniform from chip to chip. For this reason, when thermally coupling the chip and the inner wall surface of the cap using thermally conductive grease or the like, some chips require a thick layer of thermally conductive grease. When the thermal conductive grease layer is thickened, the thermal conductance between the chip and the cap becomes very small.

例えば、市販の熱伝導グリース(熱伝導率上7×10−
’W/ K[1lII+)を1+nn+厚で使用した場
合、熱コンダクタンスは7 X 1. O−’W/ K
mm2 と非常に小さい。そのため、キャップ外面を例
えば強制液冷(熱伝導率〜2×1O−2W/KI1w1
12)、沸騰冷却(〜I X 10−”W/ Kmn”
 )など高性能な冷却方法をもってしても十分な冷却効
果が得られない。
For example, commercially available thermal conductive grease (7 x 10-
When 'W/K[1lII+) is used with a thickness of 1+nn+, the thermal conductance is 7 x 1. O-'W/K
Very small, mm2. Therefore, the outer surface of the cap can be forcedly liquid cooled (thermal conductivity ~2×1O-2W/KI1w1
12), boiling cooling (~I X 10-”W/Kmn”
Even with high-performance cooling methods such as ), a sufficient cooling effect cannot be obtained.

ピストン等の熱伝導部材を用いてチップとキャップとを
熱的に接続する方法もあるが、熱コンダクタンスは0 
、5 W/ Kmn”程度が限度であり、キャップ自体
の熱伝導率を比べると小さい。
There is also a method of thermally connecting the chip and the cap using a heat conductive member such as a piston, but the thermal conductance is 0.
, 5 W/Kmn", which is low compared to the thermal conductivity of the cap itself.

また、従来のものは、検査パッドや論理変更パッド等の
目的で用いられる技術パッドがセラミック基板上に設け
られており、回路の検査や論理変更は、封じを除去しな
いと行なうことができない。
Furthermore, in the conventional device, technical pads used for purposes such as test pads and logic change pads are provided on the ceramic substrate, and circuit inspection and logic change cannot be performed without removing the seal.

前記特公昭57−48860号公報には、半田パッド及
び技術変更パッドがセラミック基板上に設けられた例が
示されているが、半田パッドが冷却液中に浸ることは、
該パッドと集積回路チップとの接続が腐食される恐れが
ある。
The above-mentioned Japanese Patent Publication No. 57-48860 shows an example in which solder pads and technologically modified pads are provided on a ceramic substrate, but it is difficult for the solder pads to be immersed in the cooling liquid.
The connection between the pad and the integrated circuit chip may be corroded.

〔発明の目的〕[Purpose of the invention]

本発明は、集積回路チップの各チップと、チップ上に搭
載される伝熱体の距離を小さくして熱抵抗を減少させる
と共に、チップの封じを除去しなくても技術変更パッド
を使用できるようにすることにある。
The present invention reduces the distance between each chip of an integrated circuit chip and the heat conductor mounted on the chip to reduce thermal resistance and allows the use of technology-modified pads without removing the chip encapsulation. It is to make it.

〔発明の概要〕[Summary of the invention]

本発明の特徴は、基板に四部を形成し、該部分に集積回
路チップを配置し、技術変更ノ(ラドを基板表面に移し
、チップ上に搭載される放熱体の外周と前記四部側面と
の間に封じ材料を充填したことにある。
The feature of the present invention is that four parts are formed on the substrate, an integrated circuit chip is placed in the parts, and the technology change (transferring the rad to the surface of the substrate) connects the outer periphery of the heat dissipation body mounted on the chip with the side surface of the four parts. The reason is that a sealing material is filled in between.

半田パッドと異なり、技術変更パッドはモジュールの組
み立て初期にのみ使用するものであるので、腐食による
不具合はない。
Unlike solder pads, technology change pads are used only during the early stages of module assembly, so there are no problems with corrosion.

〔発明の実施例〕[Embodiments of the invention]

以下本発明の実施例を図により説明する。まず、第1図
において、セラミック製の基板コ−には、多数の集積回
路チップ2とその背面に取り付けられた伝熱体3とが搭
載されている。基板1はバックボード4に取り付けられ
た状態で密閉容器5に組み込まれている。バックボード
4に取り付けられた基板1は、不電導性液10に浸漬さ
れている。
Embodiments of the present invention will be described below with reference to the drawings. First, in FIG. 1, a large number of integrated circuit chips 2 and a heat transfer body 3 attached to the back surface thereof are mounted on a ceramic substrate core. The substrate 1 is assembled into a sealed container 5 while being attached to a backboard 4. A substrate 1 attached to a backboard 4 is immersed in a non-conductive liquid 10.

集積回路チップ2の発熱により不電導性液10は、沸騰
、発泡(9)する。沸騰した不電導性液]0の蒸気は、
容器5の上部に設けられた凝縮器6で凝縮、液化(11
)L、再び容器下部の液部へ戻る。
The heat generated by the integrated circuit chip 2 causes the nonconductive liquid 10 to boil and foam (9). The vapor of boiling non-conductive liquid]0 is
Condensation and liquefaction (11
)L, return to the liquid part at the bottom of the container again.

凝縮器6には、冷却ユニット8および循環ポンプ7によ
り冷却水が送り込まれており、容器5内の蒸気を冷却す
る。
Cooling water is fed into the condenser 6 by a cooling unit 8 and a circulation pump 7 to cool the steam in the container 5.

第2図、第3図に、本発明の要部詳細を示す。FIGS. 2 and 3 show details of the main parts of the present invention.

配線ピン12を有するセラミック基板1の、チップ2を
搭載する側に、環状の凹部を多数設け、該凹部100の
底にハンダパッド14を介してチップ2を搭載し、基板
の表面11.0に検査用又は、論理変更用の技術変更パ
ッド21が設けられ、基板内部の配線20によりチップ
との電気的接続が図られている。チップの封じは、伝熱
体3を四部100に挿入し、該凹部の側壁102との間
をハンダなどの封じ材料23により封じる。伝熱体3の
先端とチップ2の間の隙間24にはハンダあるいは、熱
伝導グリースなどをつめて熱抵抗を極力少なくする。こ
れらの材料はあらかじめチップの面に取り付けておいて
もよいが、伝熱体3に孔25を設け、充てん材26を封
入するようにしてもよい。伝熱体3は、例えば、沸騰冷
却用のフィンを兼ねるようにすることもでき、冷媒10
に浸漬して気泡9を発生させ、チップの発熱を効率よく
除去する。
A large number of annular recesses are provided on the side where the chip 2 is mounted on the ceramic substrate 1 having the wiring pins 12, and the chip 2 is mounted on the bottom of the recess 100 via the solder pad 14, and the chip 2 is mounted on the surface 11.0 of the substrate. A technology change pad 21 for inspection or logic change is provided, and electrical connection with the chip is achieved through wiring 20 inside the board. To seal the chip, the heat transfer body 3 is inserted into the four parts 100, and the space between it and the side wall 102 of the recess is sealed with a sealing material 23 such as solder. The gap 24 between the tip of the heat transfer body 3 and the chip 2 is filled with solder or thermally conductive grease to reduce thermal resistance as much as possible. These materials may be attached to the surface of the chip in advance, or holes 25 may be provided in the heat transfer body 3 and fillers 26 may be sealed therein. For example, the heat transfer body 3 can also serve as a fin for boiling cooling, and the heat transfer body 3 can also serve as a fin for boiling cooling,
The chip is immersed in water to generate air bubbles 9 and efficiently remove heat generated from the chip.

沸騰冷却は、空気の強制対流による冷却法に比べて、1
0倍以上の高い熱伝達率をもたらす。
Compared to the cooling method using forced convection of air, boiling cooling is 1
This results in a heat transfer coefficient that is more than 0 times higher.

本実施例では伝熱体3が拡大伝熱面としても働くので更
に大きな有効熱伝達率が得られる。このような高性能冷
却法を用いるとき、チップから冷媒までの間に大きな熱
抵抗を呈する部分があると、折角の高性能冷却法の効果
が相殺されてしまうが、個別にチップを封じする本構造
では、チップの面と伝熱体3のチップに面かる面とをで
きる限ら近づけることができるので、該隙間24にハン
ダなど適当な充てん物を入れれば接触熱抵抗を非常に小
さくできる。本構造によれば、封じ接合面にかかる応力
は従来のこの種の封じ接合面にかかる応力よりもきわめ
て小さく、熱履歴に対し高い信頼性を持つことができる
。また沸騰冷却においては冷媒がチップの回路面に接触
すると回路素子を腐蝕したり回路の誤動作をひき起す危
険性が増す本構造においてチップがある凹み部を不活性
ガス18で満たしておけば、冷媒とチップが直接接触し
ないので上記の危険性が除かれる。なお、隙間布てん用
材料26を注入する構造においては、注入材をハンダと
し、注入後固化すれば、四部100のガス圧は外部の圧
力より若干高くできるので、たとえ微細なりラックが封
じ接合部23に入っても、冷媒が凹部100の内部に侵
入する可能性を小さくすることができる。
In this embodiment, since the heat transfer body 3 also functions as an enlarged heat transfer surface, an even larger effective heat transfer coefficient can be obtained. When using such a high-performance cooling method, if there is a part exhibiting large thermal resistance between the chip and the coolant, the effect of the high-performance cooling method will be canceled out. In the structure, the surface of the chip and the surface of the heat transfer body 3 facing the chip can be brought as close as possible, so if a suitable filler such as solder is placed in the gap 24, the contact thermal resistance can be made extremely small. According to this structure, the stress applied to the sealing joint surface is much smaller than the stress applied to a conventional sealing joint surface of this type, and it can have high reliability against thermal history. In addition, in boiling cooling, if the refrigerant contacts the circuit surface of the chip, there is an increased risk of corroding the circuit elements or causing circuit malfunction.In this structure, if the recess where the chip is located is filled with inert gas 18, Since the chips do not come into direct contact with each other, the above risks are eliminated. In addition, in the structure in which the material 26 for gap fabric is injected, if the injected material is solder and solidifies after injection, the gas pressure in the four parts 100 can be made slightly higher than the external pressure, so even if the rack is minute, the rack will be sealed and the joint will be sealed. 23, the possibility of the refrigerant entering the recess 100 can be reduced.

一方1本発明によると技術変更パッド21が基板表面1
10の頂面に設けられており、封止23の外側に位置す
る。したがって、封止を外さず、冷却構造体が動作した
通常の動作状態で回路の機能検査を行うことができる。
On the other hand, according to the present invention, the technology change pad 21 is provided on the substrate surface 1.
10 and located outside the seal 23. Therefore, the function of the circuit can be tested in the normal operating state in which the cooling structure is operated without removing the seal.

これは、チップジャンクション温度が変わると理論動作
の遅延時間が変わり、誤動作を起こす恐れがある論理L
SIを、正確に機能検査するために重要な機能である。
This is because the theoretical operation delay time changes when the chip junction temperature changes, which may cause malfunction.
This is an important function for accurate functional testing of SI.

論理変更についても同様である。The same applies to logic changes.

第4図は数個のチップ2をグループとして封止したもの
で、技術変更パッド21は基板の表面110に設けられ
ている。放熱体3はフィンを兼ねており、これに空気ま
たは液体の流れ30を流しチップの発熱を除去する。
FIG. 4 shows several chips 2 encapsulated as a group, with technology change pads 21 provided on the surface 110 of the substrate. The heat sink 3 also serves as a fin, and a flow of air or liquid 30 is passed through it to remove heat generated from the chip.

上記の実施例において、パッドが設けられる基板凸部1
10を製作するには、従来からセラミック積層基板を製
作するのを同じ方法によればよい。
In the above embodiment, the substrate convex portion 1 on which the pad is provided
10 can be manufactured using the same method as conventionally used for manufacturing ceramic laminate substrates.

即ち第5図に示すように、配線パターンを有する複数の
セラミックシート31に角形あるいは円形(図示せず)
の孔を有し、かつパッドと基板とを電気的に接続するた
めの貫通導線あるいは配線となるべき必要なスルーホー
ル、メタルパターンを有するセラミックシート32を重
ね焼結する。
That is, as shown in FIG.
Ceramic sheets 32 having through-holes and metal patterns, which are to be used as through conductors or wiring for electrically connecting the pads and the substrate, are stacked and sintered.

セラミックシートの代りに、ポリイミド樹脂などの他の
有機薄膜を積層、接合して用いてもよい。
Instead of the ceramic sheet, other organic thin films such as polyimide resin may be laminated and bonded.

基板表面の技術変更パッドと基板内の配線とを電気的に
接続するために、該積層シー1〜に、貫通導体や導体配
線パターンを内蔵させる。
In order to electrically connect the technology change pad on the surface of the substrate and the wiring within the substrate, a through conductor or a conductor wiring pattern is built into the laminated sheet 1.

放熱体としては、多孔質構造体、例えば、焼結体や多数
の微細溝を有する板を積層したものを採用してもよい。
As the heat dissipation body, a porous structure such as a sintered body or a stack of plates having a large number of fine grooves may be used.

〔発明の効果〕〔Effect of the invention〕

本発明は、集積回路チップを個別に、あるいは少数のチ
ップのグループ別に、外周の冷却流体あ幣いは雰囲気を
隔離するための封じを行ない、封じの外側に技術変更パ
ッドを設けたので各チップを封じ伝熱体の間に距離をき
わめて小さくすることができるので、沸騰冷却液冷却な
ど高性能冷却法の効果を十分に活かすことができる。
The present invention seals the integrated circuit chips individually or in groups of a small number of chips, and seals the outer circumferential cooling fluid bubble to isolate the atmosphere, and provides a technology change pad on the outside of the seal, so that each chip Since the distance between the heat transfer bodies can be made extremely small, the effects of high-performance cooling methods such as boiling coolant cooling can be fully utilized.

さらに、技術変更パッドが封じの外側に露出しているの
で、封じ構造を設けたままで集積回路の機能検査や論理
変更ができる。この技術変更パラドは、半田パッドと異
なり、使用時期が初期に限られるため、冷却流体に触れ
ても問題はない。
Furthermore, because the technology change pad is exposed outside the enclosure, the functionality of the integrated circuit can be tested and the logic changed while the enclosure structure remains in place. Unlike solder pads, this technology-changed Parade is used only in the early stages, so there is no problem even if it comes into contact with cooling fluid.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本発明の一実施例の一部断面斜視図、第2図
は、本発明の要部拡大平面図、第3図は、本発明の封じ
部を示す要部縦断面図、第4図は、本発明の他の実施例
の斜視図、第5図は、本発明の製法の一例を示す図であ
る。 ■・・・セラミック製の基板、2・・集積回路チップ、
Y1図 冨  3  図 g γ 4 図 Z  5  図
FIG. 1 is a partial cross-sectional perspective view of an embodiment of the present invention, FIG. 2 is an enlarged plan view of the main part of the present invention, and FIG. 3 is a longitudinal cross-sectional view of the main part showing the sealing part of the present invention. FIG. 4 is a perspective view of another embodiment of the present invention, and FIG. 5 is a diagram showing an example of the manufacturing method of the present invention. ■...Ceramic substrate, 2...Integrated circuit chip,
Y1 Figure 3 Figure G γ 4 Figure Z 5 Figure

Claims (1)

【特許請求の範囲】 1、絶縁性の基板と、該基板上に搭載された複数の集積
回路チップと、基板上で各集積回路チップの付近に設け
られ各チップに接続される半田パッド及び技術変更パッ
ドと、1〜複数の集積回路チップ毎に設けられた放熱体
と、放熱体の周囲に設けられ冷却用流体を収容する室と
を備えたマルチチップモジュールにおいて、前記基板は
、各々1〜複数の集積回路チップを収容する環状の凹部
を複数個備え、該凹部の底部分に前記半田パッドが設け
られ、一方凹部の側面と放熱体の外周の間隙に封じ材料
が充填され、封じ材料の外側の基板表面に前記技術変更
パッドが設けられていることを特徴とするマルチチップ
モジュール。 2、特許請求の範囲第1項記載のマルチチップモジュー
ルにおいて、前記基板は、該チップに相当する部分がく
り貫かれたセラミックシートあるいはポリイミド樹脂な
どの有機薄膜、および、スルーホール部以外はむくのセ
ラミックシートあるいはポリイミド樹脂などの有機薄膜
を積層、接合することにより該基板を形成し、技術変更
パッドと該基板内の配線とを電気的に接続するために、
該積層シートに導体配線パターンを内蔵する基板である
ことを特徴とするマルチチップモジュール。 3、特許請求の範囲第1項記載のマルチチップモジュー
ルにおいて、該チップ封じ用構造材に沸騰熱伝達を促進
するための多孔質構造を設けたことを特徴とするマルチ
チップモジュール。
[Claims] 1. An insulating substrate, a plurality of integrated circuit chips mounted on the substrate, and a solder pad and technology provided near each integrated circuit chip on the substrate and connected to each chip. In a multi-chip module comprising a change pad, a heat dissipation body provided for each of one to a plurality of integrated circuit chips, and a chamber provided around the heat dissipation body and containing a cooling fluid, each of the substrates has one to a plurality of integrated circuit chips. A plurality of annular recesses are provided for accommodating a plurality of integrated circuit chips, and the solder pads are provided at the bottoms of the recesses, and a sealing material is filled in the gap between the side surfaces of the recesses and the outer periphery of the heat sink. A multi-chip module characterized in that the technology change pad is provided on an outer substrate surface. 2. In the multi-chip module according to claim 1, the substrate is made of a ceramic sheet or an organic thin film made of polyimide resin, which is hollowed out in the portion corresponding to the chip, and is exposed except for the through-hole portion. The substrate is formed by laminating and bonding ceramic sheets or organic thin films such as polyimide resin, and in order to electrically connect the technology change pad and the wiring within the substrate,
A multi-chip module characterized in that the laminated sheet is a substrate having a built-in conductor wiring pattern. 3. The multi-chip module according to claim 1, wherein the chip-sealing structural material is provided with a porous structure for promoting boiling heat transfer.
JP60120439A 1985-06-05 1985-06-05 Multiple chip module Granted JPS61279156A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60120439A JPS61279156A (en) 1985-06-05 1985-06-05 Multiple chip module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60120439A JPS61279156A (en) 1985-06-05 1985-06-05 Multiple chip module

Publications (2)

Publication Number Publication Date
JPS61279156A true JPS61279156A (en) 1986-12-09
JPH0342702B2 JPH0342702B2 (en) 1991-06-28

Family

ID=14786230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60120439A Granted JPS61279156A (en) 1985-06-05 1985-06-05 Multiple chip module

Country Status (1)

Country Link
JP (1) JPS61279156A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019043835A1 (en) * 2017-08-30 2019-03-07 日本電気株式会社 Electronic device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019043835A1 (en) * 2017-08-30 2019-03-07 日本電気株式会社 Electronic device
JPWO2019043835A1 (en) * 2017-08-30 2020-09-24 日本電気株式会社 Electronic device

Also Published As

Publication number Publication date
JPH0342702B2 (en) 1991-06-28

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