JPH09293808A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device in which radiation efficiency is improved while maintaining preferable electrical connection between a semiconductor chip and a circuit board by supporting a radiating fin thermally joined to the semiconductor chip with a supporting member having the same height as that of the semiconductor chip from a mounting face of a substrate in a position around the semiconductor chip mounting position on the substrate. SOLUTION: A supporting member 6 is made of glass epoxy resin and is constructed so that a semiconductor chip 2 mounted on a circuit board 3 is positioned in a cavity 8 formed at the center of the supporting member 6. That is, the supporting member 6 is positioned around the semiconductor chip 2 in a state that the supporting member 6 is arranged on the circuit board 3. It is set so that the height of the supporting member 6 from a mounting face 3a of the circuit board 3 is substantially equal to the height of the semiconductor chip 2 in a state mounted on the circuit board 3. The radiation fin 4 is made of, for example, aluminum and is joined to the supporting member 6 and the semiconductor chip 2 by using an adhesive 10.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a semiconductor device in which a semiconductor chip is mounted on a substrate by using a flip chip bonding technique. In recent years, the density of semiconductor chips has increased, and the number of electrode pads has also tended to increase. When the number of electrode pads is increased in this way, the arrangement pitch of the wires is narrowed in the configuration in which the wires are used for electrical connection with the substrate on which the semiconductor chip is mounted, and there is a risk of interference between adjacent wires.

Therefore, a method of forming bumps on the electrode pads of the semiconductor chip and mounting the semiconductor chip of this structure on the substrate by using the flip chip bonding technique has been adopted. On the other hand, due to the high integration of the semiconductor chips as described above, the power consumption of each semiconductor chip increases, and along with this, the amount of heat generated by each semiconductor chip tends to increase. For this reason,
It is also required to improve heat dissipation efficiency in a semiconductor device in which a semiconductor chip is mounted by using a flip chip bonding technique.

[0003]

2. Description of the Related Art Generally, a semiconductor device in which a bare chip semiconductor chip is mounted on a circuit board by using a flip chip bonding technique has solder bumps formed on electrode pads of the semiconductor chip and formed on the circuit board. The semiconductor chip and the circuit board are electrically connected by flip-chip bonding to the wiring pattern.

Further, after flip-chip bonding the semiconductor chip to the circuit board, a resin (underfill resin) is loaded between the lower surface of the semiconductor chip and the upper surface of the circuit board so as to fill the solder bump, and thereby the solder bump is formed. Is being promoted.

Conventionally, in this type of semiconductor device, the circuit board and the semiconductor chip are not housed in a package made of mold resin, but the heat generated from the semiconductor chip is radiated to the surroundings.

[0006]

However, the heat radiation structure that radiates the heat generated from the semiconductor chip to the surroundings by radiation radiates the problem that sufficient heat radiation efficiency cannot be obtained. Therefore, in order to improve the heat dissipation efficiency, a structure in which a heat dissipation fin is mounted on the upper surface of the semiconductor chip and the heat generated in the semiconductor chip is dissipated using this heat dissipation fin can be considered.

However, in the configuration in which the semiconductor chip is mounted on the circuit board by using the flip chip bonding technique, when the radiation fin is mounted on the semiconductor chip, the weight of the radiation fin is entirely applied to the solder bump. In addition, the solder bump is easily deformed because it is made of solder having low hardness. Furthermore, from the aspect of improving heat dissipation efficiency, fins (heat dissipation wings) provided on the heat dissipation fins.
It is desirable to increase the number of the heat radiation fins. Therefore, if the heat radiation efficiency is improved, the weight of the heat radiation fins increases.

Therefore, if the radiation fins are simply arranged directly on the semiconductor chip, a great stress is applied to the solder bumps, and the solder bumps are deformed or damaged, resulting in poor electrical connection between the semiconductor chip and the circuit board. There was a problem that there was a risk of doing so. This problem is ameliorated slightly by loading the underfill resin between the semiconductor chip and the upper surface of the circuit board. However, since the underfill resin is also easily deformed by resin, the underfill resin is provided. Only by doing so, it was not possible to reliably prevent the occurrence of the above-mentioned electrical connection failure.

The present invention has been made in view of the above points, and an object thereof is to provide a semiconductor device capable of improving heat dissipation efficiency while maintaining good electrical connectivity between a semiconductor chip and a circuit board. To do.

[0010]

The above objects can be attained by taking the following means. Claim 1
In the described invention, in a semiconductor device in which a semiconductor chip is mounted on a substrate by using a flip chip bonding technique, a heat radiation fin that is thermally joined to the semiconductor chip to perform a heat radiation process is provided, and A structure in which a supporting member having a height substantially the same as the height from the substrate mounting surface of the semiconductor chip is disposed in the peripheral position of a portion where the semiconductor chip is mounted, and the heat radiation fin is supported by the supporting member. It is characterized by that.

According to a second aspect of the present invention, in the semiconductor device according to the first aspect, a radiation fin is provided so as to come into contact with the upper surfaces of the semiconductor chip and the supporting member. is there.

According to a third aspect of the present invention, in the semiconductor device according to the first or second aspect, the supporting member is formed of a high thermal conductive material. In the invention according to claim 4, the invention according to claim 1
The semiconductor device according to any one of items 1 to 3, wherein an underfill resin is provided between the substrate and the semiconductor chip.

Further, the invention according to claim 5 is the semiconductor device according to claim 4, characterized in that the semiconductor chip and the supporting member are separated from each other by at least 0.5 mm or more. .

Each of the above means operates as follows.
According to the first aspect of the present invention, the supporting member is arranged in the peripheral position of the portion on the substrate where the semiconductor chip is mounted, and the supporting member is substantially the same as the height of the semiconductor chip from the substrate mounting surface. Since the mounting member having a large height is mounted on the upper part of the semiconductor chip by the structure having the height,
The mounting member can be supported by the support member.
Therefore, it is possible to prevent the weight of the mounting member from being entirely applied to the bumps located at the joint between the semiconductor chip and the circuit board.

Further, since the supporting member is provided in the peripheral position of the portion on which the semiconductor chip is mounted on the substrate and the radiation fin is supported by this supporting member, the weight of the radiation fin can be received by the supporting member. it can. Therefore, it is possible to prevent the weight of the heat radiation fin from being applied to the bump located at the joint between the semiconductor chip and the circuit board.

According to the second aspect of the present invention, since the radiation fins are configured to abut both the upper surface of the semiconductor chip and the upper surface of the support member, the weight of the radiation fin is received by both the support member and the semiconductor chip. Becomes

Therefore, the stress applied to the joint portion between the semiconductor chip and the circuit board is dispersed, and the deformation and damage of the solder bumps are suppressed, so that the heat dissipation efficiency is improved and the electric power between the semiconductor chip and the circuit board is improved. Connection can be improved. According to the third aspect of the present invention, since the support member is formed of the high thermal conductive material, the support member can be used as a heat dissipation member, and the heat dissipation efficiency of the semiconductor chip can be further improved.

According to the fourth aspect of the invention, since the underfill resin is provided between the substrate and the semiconductor chip, the stress applied to the joint between the semiconductor chip and the circuit board is underfilled. Since it is also received by the resin, the stress applied to the bump can be further reduced.

Further, according to the invention of claim 5, in a semiconductor device having an underfill resin arranged between the substrate and the semiconductor chip, the semiconductor chip and the supporting member are separated from each other by at least 0.5 mm or more. With this structure, it is possible to prevent the underfill resin flowing out from the bonding position between the substrate and the semiconductor chip from affecting the supporting member. That is, when the underfill resin is interposed between the substrate and the semiconductor chip, the underfill resin inevitably flows out in a slight amount. This outflow amount is about 0.5 on the outer periphery of the semiconductor chip.
It is empirically known to be less than mm, and therefore, by spacing the support member from the semiconductor chip by at least 0.5 mm or more, it is possible to prevent the underfill resin from affecting the support member.

[0020]

Next, an embodiment of the present invention will be described. FIG. 1 shows a semiconductor device 1 which is a first embodiment of the present invention. The semiconductor device 1 is a single-chip BG.
A semiconductor device having an A (Ball Grid Array) structure, which is roughly composed of a semiconductor chip 2, a circuit board 3, a radiation fin 4, an external connection bump 5, and a supporting member 6 which is a main part of the present invention. .

The semiconductor chip 2 is a chip that consumes a large amount of power due to high integration, and therefore generates a large amount of heat. A large number of electrode pads (not shown) are formed on the surface of the semiconductor chip 2 facing the circuit board 3, and solder bumps 7 for internal connection are formed on each of the electrode pads.

The semiconductor chip 2 having the above structure is mounted on the circuit board 3 by using the flip chip bonding technique. That is, an upper connection pattern (not shown) is formed on the upper surface of the circuit board 3 (mounting surface 3a of the semiconductor chip 2) so as to correspond to the positions where the solder bumps 7 are formed. Face down and bond the solder bumps 7 to the upper connection pattern using a thermal tool.
The semiconductor chip 2 is bonded to the circuit board 3 by performing this flip chip bonding.

Further, an underfill resin 11 is provided in a separated portion between the semiconductor chip 2 and the mounting surface 3a of the circuit board 3 (that is, a portion where the solder bumps 7 are arranged. This separated portion is hereinafter referred to as a joint portion). Is loaded. in this way,
By loading the underfill resin 11 at the joint between the semiconductor chip 2 and the circuit board 3, the solder bump 7 can be protected, and thus the life of the solder bump 7 can be extended.

The circuit board 3 is a multilayer wiring board, and either a multilayer resin board or a ceramic multilayer board can be applied. An upper connection pattern for bonding the solder bumps 7 is formed on the upper surface of the circuit board 3 as described above, and a lower connection pattern (not shown) on which the external connection bumps 5 are arranged on the lower surface 3b. ) Is formed. Further, the upper connection pattern and the lower connection pattern are connected by the internal wiring formed in the circuit board 3.

The external connection bumps 5 are formed, for example, by bonding preformed solder balls to the lower wiring pattern of the circuit board 3. The external connection bumps 5 function as external connection terminals that connect the semiconductor device 1 to the mounting substrate during mounting.

Although the bumps are used as the external connection terminals of the semiconductor device 1 in this embodiment, the external connection terminals are not limited to the bumps, and other terminal structures such as leads and pins may be adopted. Is also possible. The supporting member 6 has a frame-like shape and is arranged on the circuit board 3. In this embodiment, the supporting member 6 is made of a glass epoxy resin such as BT resin (manufactured by Mitsubishi Gas Chemical Co., Ltd.), and the semiconductor chip 2 mounted on the circuit board 3 in the cavity 8 formed at the center thereof. Are configured to be located. Therefore, the support member 6 is located around the semiconductor chip 2 in a state where the support member 6 is arranged on the circuit board 3.

The support member 6 is adhered to the circuit board 3 with an adhesive 9. As the adhesive 9 for adhering the support member 6 to the circuit board 3, an epoxy resin, an epoxy resin film, a thermoplastic resin, a thermoplastic resin film, or the like can be used. The height of the supporting member 6 from the mounting surface 3a of the circuit board 3 is substantially equal to the height of the semiconductor chip 2 mounted on the circuit board 3 (indicated by an arrow H in the figure). Is set to. Here, substantially, the height of the support member 6 from the mounting surface 3a of the circuit board 3 can be slightly increased or decreased with respect to the height of the semiconductor chip 2 mounted on the circuit board 3. Say that.

That is, as described above, the support member 6 is attached to the adhesive 9
Is adhered to the circuit board 3 and the heat dissipation fin 4 is also adhered to the upper portion of the support member 6 using the adhesive 10, as will be described later. The height from the mounting surface 3a of the circuit board 3 can be given a degree of freedom.

Specifically, the height of the support member 6 from the mounting surface 3a of the circuit board 3 is ± 0.2 mm with respect to the height of the semiconductor chip 2 mounted on the circuit board 3. It is possible to have Therefore, in this specification, the height of the support member 6 from the mounting surface 3a of the circuit board 3 and
Even if there is a difference of ± 0.2 mm in the height of the semiconductor chip 2 mounted on the circuit board 3, they are substantially equal in height.

Further, the inner wall of the cavity portion 8 formed in the supporting member 6 and the semiconductor chip 2 are at least 0.5 m.
It is configured to be separated by m or more. By thus separating the support member 6 and the semiconductor chip 2 from each other by 0.5 mm or more, it is possible to prevent the underfill resin 11 from affecting the support member 6. Note that this will be described in detail later.

In this embodiment, a glass epoxy resin such as BT resin (manufactured by Mitsubishi Gas Chemical Co., Ltd.) is used as the material of the supporting member 6, but Kovar, 42 alloy is used as the material of the supporting member 6. It is possible to use a metal such as aluminum, aluminum, or copper, or a material obtained by plating these metals with nickel, gold, or the like. When these metals are used as the supporting member 6, the supporting member 6 can be bonded to the circuit board 3 by using solder, silver solder, gold-tin or the like as an adhesive.

The radiating fins 4 are arranged on the supporting member 6 and the semiconductor chip 2 having the above-mentioned structure. The radiating fins 4 are made of, for example, a highly heat conductive material such as aluminum and have a plurality of fins 12 (radiating vanes). The heat radiation fins 4 are bonded to the support member 6 and the upper portion of the semiconductor chip 2 using the adhesive 10 as described above. As the adhesive 10, an adhesive having good thermal conductivity is selected. Further, as is well known, the heat dissipation fin 4 has a larger number of fins 12 and a larger area in contact with air has a better heat dissipation efficiency, so that its shape tends to be larger, and accordingly, the weight tends to be heavier. is there.

In the semiconductor device 1 having the above-described structure, the height of the supporting member 6 from the mounting surface 3a of the circuit board 3 and the circuit board 3 are different.
Since the height of the semiconductor chip 2 mounted on the semiconductor chip 2 is substantially equal to the height H, when the heat radiation fin 4 is arranged, the heat radiation fin 4 is supported by both the semiconductor chip 2 and the support member 6. Will be configured. That is, in the semiconductor device 1 according to the present embodiment, the weight of the heat radiation fin 4 is received by both the support member 6 and the semiconductor chip 2.

As a result, the weight of the radiation fins 4 is the area S1 where the support member 6 contacts the radiation fins 4 and the area S2 where the semiconductor chip 2 contacts the radiation fins 4 (S1> S2).
And distributed according to the ratio. Therefore, the semiconductor chip 2
The stress applied to the joint between the circuit board 3 and the circuit board 3 can be made significantly smaller than that in the configuration in which the support member 6 is not provided, whereby the solder bumps 7 arranged at the joint are deformed and damaged. Can be prevented.

Further, for the same reason, it is possible to use a heat radiation fin 4 having a large number of fins 12, that is, a heavy one. Therefore, it is possible to improve the heat dissipation efficiency and improve the electrical connection between the semiconductor chip 2 and the circuit board 3. Further, as described above, when the supporting member 6 is made of metal such as Kovar, 42 alloy, aluminum or copper, or those metals plated with nickel, gold or the like, the supporting member 6 is The thermal conductivity is higher than that of the case where it is formed of resin.
Therefore, the supporting member 6 can be used as a heat radiating member, and the heat generated in the semiconductor chip 2 can be radiated by the supporting member 6 in addition to the heat radiating fins 4.
The heat dissipation efficiency of can be further improved.

FIG. 2 shows a semiconductor device 1A according to the second embodiment of the present invention. 2, the same components as those of the semiconductor device 1 shown in FIG. 1 are designated by the same reference numerals and the description thereof will be omitted. In addition, the third described later with reference to FIG.
The same applies to the semiconductor device 1B according to the example.

The semiconductor device 1A shown in FIG. 2 has a screw instead of the adhesive 10 used in the semiconductor device 1 according to the first embodiment as a means for fixing the radiation fin 4 to the upper part of the semiconductor chip 2 and the support member 6. 13 is used. Through holes 14 and 15 for inserting the screws 13 are formed at predetermined positions of the heat radiation fin 4 and the supporting member 6, and screw holes 16 to be screwed with the screws 13 are provided at predetermined positions of the circuit board 3. Has been formed. The holes 14 to 16 are formed so as to communicate with each other.

Therefore, after positioning the radiation fin 4 and the support member 6 (positioned and bonded to the circuit board 3), the screw 13 is inserted into the through holes 14 and 15 and screwed into the screw hole 16. By mounting, the heat radiation fins 4 can be fixed to the upper portions of the semiconductor chip 2 and the support member 6.

In the semiconductor device 1A having the above structure, the heat radiation fins 4 are in direct contact with the semiconductor chip 2, so that the heat radiation fins 4 and the semiconductor chip 2 are the same as in the first embodiment.
As compared with the configuration in which the adhesive 10 made of resin is interposed between the heat dissipating fin and the semiconductor chip 2, heat transfer between the heat dissipating fins 4 and the semiconductor chip 2 can be favorably performed. Therefore, the heat radiation efficiency can be improved by directly contacting the heat radiation fin 4 and the semiconductor chip 2 as in this embodiment.

FIG. 3 shows a semiconductor device 1B which is a third embodiment of the present invention. The present embodiment is an example in which the present invention is applied to a semiconductor device in which an electronic element 18 is arranged on the mounting surface 3a of the circuit board 3 in addition to the semiconductor chip 2. The electronic element 18 is, for example, a chip resistor, a chip capacitor, or the like, and is mounted at a predetermined position on the mounting surface 3a. Since the support member 6 cannot be arranged at the position where the electronic element 18 is arranged, in the present embodiment, the support member 6 is composed of a plurality of divided bodies 6a and 6b.
A and 6b are provided in a portion where the semiconductor chip 2 and the electronic element 18 are not provided.

As in the semiconductor device 1B according to this embodiment, it is possible to provide the supporting member 6 according to the layout of the semiconductor chip 2 and the electronic element 18 arranged on the circuit board 3, and thus the circuit board 3 is provided. Even if the electronic element 18 is mounted on the semiconductor chip 2, it is possible to improve the heat dissipation efficiency and improve the electrical connection between the semiconductor chip 2 and the circuit board 3.

Next, a method of manufacturing a semiconductor device according to the present invention will be described. In the following description, the method for manufacturing the semiconductor device 1 according to the first embodiment shown in FIG. 1 will be described as an example. 4 to 6 show a method of manufacturing the semiconductor device 1 according to the first embodiment. The manufacturing method according to the present embodiment roughly includes a chip mounting step, a supporting member disposing step, a radiation fin disposing step, and an external terminal forming step. Hereinafter, each configuration will be described. In each figure, the semiconductor device 1 according to the first embodiment shown in FIG.
The same components as those in FIG.

FIG. 4 shows a chip mounting process. The circuit board 3 is a multilayer wiring board and is formed in a circuit board forming step which is a step different from the manufacturing method of the semiconductor device 1. As described above, the upper connection pattern is formed on the mounting surface 3a, which is the upper surface of the circuit board 3, and the lower connection pattern is formed on the lower surface 3b. Further, the upper connection pattern and the lower connection pattern are connected by the internal wiring formed in the circuit board 3.

On the other hand, the semiconductor chip 2 has solder bumps 7 formed on the electrode pads in advance. This semiconductor chip 2
Is placed at a predetermined position on the circuit board 3 by a handling device, and is then heat-treated by a thermal tool to bond the solder bumps 7 to the upper connection pattern. As a result, the semiconductor chip 2 and the circuit board 3 are electrically connected.

Subsequently, the underfill resin 11 is loaded in the joint formed between the semiconductor chip 2 and the circuit board 3. This underfill resin 11 is performed by injecting resin between the lower surface of the semiconductor chip 2 and the mounting surface 3a. At this time, since the underfill resin 11 has a certain degree of fluidity, it slightly flows out to the periphery of the semiconductor chip 2. The range in which the underfill resin 11 flows out is less than 0.5 mm from the outer circumference of the semiconductor chip 2 (indicated by arrow L in the figure).

When the chip mounting process described above is completed, the supporting member disposing process shown in FIG. 5 is subsequently performed.
In the supporting member arranging step, first, the adhesive 9 is applied on the circuit board 3 on which the semiconductor chip 2 is mounted. Further, the support member 6 is formed by, for example, press molding in the support member forming step which is performed as a separate step. At this time, the cavity portion 8 is also integrally formed.

At this time, as described above, the cavity portion 8 formed in the supporting member 6 is formed in a shape separated from the semiconductor chip 2 by at least 0.5 mm or more. The application position of the adhesive 9 is also set to correspond to this. Support member 6 formed as described above
Is placed on the circuit board 3 by a handling device or the like and fixed by the adhesive 9. In this fixed state, by setting the shape of the cavity portion 8 as described above, the distance between the semiconductor chip 2 and the supporting member 6 is at least 0.5 m.
Separate by m or more.

With such a structure, it is possible to prevent the underfill resin 11 flowing out from the joining position between the semiconductor chip 2 and the circuit board 3 from affecting the supporting member 6. That is, when the underfill resin 11 is injected into the joint portion, the amount of the underfill resin 11 inevitably flows out. This outflow amount is about 0.5 on the outer periphery of the semiconductor chip as described above.
It is empirically known that it is less than mm (indicated by an arrow L in the figure).

Therefore, assuming that the distance between the semiconductor chip 2 and the supporting member 6 is less than 0.5 mm, the supporting member 6 is mounted on the underfill resin 11 when the supporting member 6 is mounted on the circuit board 3. turn into. In this state, the support member 6 is tilted, and the height of the support member 6 from the mounting surface 3a cannot be accurately determined, and a difference occurs between the height of the semiconductor chip 2 and the height of the support member 6. I will end up.

Therefore, in this embodiment, the underfill resin 11 is supported by the support member 6 by separating the support member 6 from the semiconductor chip 2 by at least 0.5 mm or more.
And the height of the support member 6 from the mounting surface 3a and the mounting surface 3a of the semiconductor chip 2 are prevented.
It is configured to accurately match the height from.

When the supporting member disposing step described above is completed, the radiating fin disposing step shown in FIG. 6 is subsequently performed. The radiating fins 4 are formed in the radiating fin forming step which is a separate step. In the radiating fin disposing step, the adhesive 10 is first applied to the lower surface of the radiating fins 4. continue,
The radiation fin 4 coated with the adhesive 10 is placed on the semiconductor chip 2 and the support member 6 using a handling device or the like, and the radiation fin 4 is bonded to the semiconductor chip 2 by the adhesive 10.
And the upper part of the supporting member 6 is adhered.

At this time, in this embodiment, the height H of the support member 6 from the mounting surface 3a of the circuit board 3 and the height of the semiconductor chip 2 mounted on the circuit board 3 are substantially equal to each other. Therefore, when the radiation fins 4 are arranged in the radiation fin arrangement step, the radiation fins 4 are supported by both the semiconductor chip 2 and the support member 6.

Therefore, as described above, the stress applied to the joint between the semiconductor chip 2 and the circuit board 3 is reduced by the supporting member 6
It can be made significantly smaller than the configuration without
As a result, it is possible to prevent deformation and damage of the solder bumps 7 arranged at the joints.

When the heat dissipating fin arranging step described above is completed, an external terminal forming step (not shown) is subsequently carried out,
External connection bumps 5 are formed by joining solder balls to the lower connection patterns formed on the lower surface 3b of the circuit board 6, and the semiconductor device 1 shown in FIG. 1 is manufactured by performing the above processing. It

The manufacture of the semiconductor devices 1A and 1B according to the second and third embodiments shown in FIGS. 2 and 3 can also be carried out according to the above-described manufacturing method with only a slight change in the steps. it can.

[0056]

According to the present invention as described above, the following various effects can be realized. According to the first aspect of the present invention, it is possible to prevent all of the weight of the mounting member from being applied to the bumps located at the joints between the semiconductor chip and the circuit board. Therefore, it is possible to prevent the bumps from being damaged or damaged. Therefore, the reliability of the semiconductor device can be improved.

Further, since it is possible to prevent the weight of the heat radiation fin from being applied to the bump located at the joint between the semiconductor chip and the circuit board, the heat radiation efficiency is improved and the bump is prevented from being damaged or damaged. be able to. According to the second aspect of the present invention, the stress applied to the joint between the semiconductor chip and the circuit board is dispersed, and the deformation and damage of the solder bumps are suppressed. Good electrical connection between the chip and the circuit board can be achieved.

According to the third aspect of the invention, since the supporting member is made of a high thermoelectric material, the supporting member can be used as a heat radiating member, and the heat radiating efficiency of the semiconductor chip can be further improved. You can Further, according to the invention described in claim 4, since the stress applied to the joint portion between the semiconductor chip and the circuit board is also received by the underfill resin, the stress applied to the bump can be further reduced.

Further, according to the invention of claim 5, the support member is separated from the semiconductor chip by at least 0.5 mm or more, so that the underfill resin can be prevented from affecting the support member.

[Brief description of drawings]

FIG. 1 is a diagram showing a configuration of a semiconductor device that is a first embodiment of the present invention.

FIG. 2 is a diagram showing a configuration of a semiconductor device that is a second embodiment of the present invention.

FIG. 3 is a diagram showing a configuration of a semiconductor device which is a third embodiment of the present invention.

FIG. 4 is a diagram for explaining the manufacturing method of the semiconductor device shown in FIG. 1, and a diagram for explaining a chip mounting step.

FIG. 5 is a diagram for explaining the manufacturing method of the semiconductor device shown in FIG. 1, and is a diagram for explaining the supporting member disposing step.

FIG. 6 is a diagram for explaining the manufacturing method of the semiconductor device shown in FIG. 1, and is a diagram for explaining the radiation fin disposing step.

[Explanation of symbols]

 1, 1A, 1B Semiconductor device 2 Semiconductor chip 3 Circuit board 3a Mounting surface 4 Radiating fin 5 External connection bump 6 Support member 6a, 6b Divided body 7 Solder bump 8 Cavity part 9,10 Adhesive 11 Underfill resin 13 Screw 14 , 15 Through hole 16 Screw hole 18 Electronic device

Claims (5)

[Claims] 1. A semiconductor device in which a semiconductor chip is mounted on a substrate by using a flip chip bonding technique, wherein a heat radiation fin that is thermally joined to the semiconductor chip to perform a heat radiation process is provided, A configuration in which a supporting member having a height substantially the same as the height from the substrate mounting surface of the semiconductor chip is disposed in the peripheral position of a portion where the semiconductor chip is mounted, and the heat radiation fin is supported by the supporting member. A semiconductor device characterized by the above. 2. The semiconductor device according to claim 1, wherein a heat radiation fin is provided so as to be in contact with both upper surfaces of the semiconductor chip and the support member. 3. The semiconductor device according to claim 1, wherein the support member is made of a material having high thermal conductivity. 4. The semiconductor device according to claim 1, wherein an underfill resin is provided between the substrate and the semiconductor chip. 5. The semiconductor device according to claim 4, wherein the semiconductor chip and the supporting member are at least 0.5.
A semiconductor device characterized in that it is configured to be separated by at least mm.