JPS6127704B2 - - Google Patents

Info

Publication number
JPS6127704B2
JPS6127704B2 JP6139380A JP6139380A JPS6127704B2 JP S6127704 B2 JPS6127704 B2 JP S6127704B2 JP 6139380 A JP6139380 A JP 6139380A JP 6139380 A JP6139380 A JP 6139380A JP S6127704 B2 JPS6127704 B2 JP S6127704B2
Authority
JP
Japan
Prior art keywords
bridge
heat generating
film
gas
electric heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6139380A
Other languages
Japanese (ja)
Other versions
JPS56157846A (en
Inventor
Mitsuteru Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP6139380A priority Critical patent/JPS56157846A/en
Publication of JPS56157846A publication Critical patent/JPS56157846A/en
Publication of JPS6127704B2 publication Critical patent/JPS6127704B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/14Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Surface Heating Bodies (AREA)
  • Semiconductor Integrated Circuits (AREA)

Description

【発明の詳細な説明】 一般に、接触燃焼式ガス検出器、或いは、半導
体ガス検出器においては、ガス検出素子に電熱器
を使用するが、その電熱器は、消費電力が少なく
かつ熱時定数の小さいものが望ましく、そのため
には、電熱器を小型化して熱容量を小さくする必
要がある。
Detailed Description of the Invention Generally, in a catalytic combustion type gas detector or a semiconductor gas detector, an electric heater is used for the gas detection element. A small one is desirable, and for that purpose, it is necessary to downsize the electric heater and reduce its heat capacity.

上述のごとき要望に応えて本出願人は先に第1
図乃至第3図に示すような橋架状の発熱部を有す
る電熱器について提案した。
In response to the above-mentioned requests, the applicant has previously
We have proposed an electric heater having a bridge-like heating section as shown in Figures 3 to 3.

第1図乃至第3図において、第1図は平面図、
第2図は第1図の―線からみた断面図、第3
図は第1図の―線からみた断面図で、図中、
はシリコン(Si)ウエハー、10はSiウエハー
上に形成されたシリコン熱酸化(SiO2)膜で、
このSiO2膜は10は耐熱性かつ電気絶縁性に富
み、機械的強度も比較的強く、また、エツチング
液もSiウエハーとは異なつている。2はSiウエ
ハーに設けられた空洞、10a,10bは
SiO210に設けられたスリツトで、これら空
洞及びスリツトは、例えば、次のようにして作れ
る。まず、Siウエハーの表面を水蒸気雰囲気中
において、1100℃で、数時間熱酸化して厚み1.0
μm程度のSiO210を成長させる。次に、フ
オトレジスト・パターンを用いた公知のフオトエ
ツチング法によりSiO210を、例えば、フツ
化アンモニウム系エツチングし、次いで、Siウエ
ハーをシルバーグリコールエツチング液等の結
晶方向によつてエツチング速度があまり変らない
エツチング液を用いてエツチングして適当な深さ
の溝を作る。その後、Siの異方法エツチング液で
あり、かつ、SiO2はほとんど侵さないエチレン
ジアミン水溶液等を用いたエツチング液で前記溝
の両側面を積極的にエツチングするとともに、両
溝間をアンダーカツトによつて貫通させて空洞2
及びスリツト10a,10bを形成し、SiO2
の橋10cを作る。斯様にして形成した基板の上
に、被検出ガスに対して触媒作用を示す物質、例
えば、Pt、又は抵抗温度係数の大きい抵抗体にPt
やPd等を混合した物質をスパツタリングして導
電体層13を形成し、この導電体層13にリード
線15a,15bを設け、リード線15a,15
b間に電流を流すと橋架部13aが発熱し、周囲
に可燃性ガスが存在すると該橋架部13aで燃焼
してその電気抵抗を変化させる。従つて、この電
気抵抗の変化を検出していれば、可燃性ガスの存
在を検知することができる。また、前記導電体層
13として、一酸化炭素や塩素等に感応し、これ
らの吸着又は付着によつて電気抵抗が変化するよ
うなガス感応物質、例えば、二酸化ガス
(SiO2)等のガス感応体を使用すれば、可燃性以
外のガスを検出するようにすることもできる。
In Figures 1 to 3, Figure 1 is a plan view;
Figure 2 is a sectional view taken from the - line in Figure 1;
The figure is a sectional view taken from the - line in Figure 1.
1 is a silicon (Si) wafer, 10 is a Si wafer
A silicon thermal oxide (SiO 2 ) film formed on 1 ,
This SiO 2 film 10 is highly heat resistant and electrically insulating, has relatively strong mechanical strength, and uses a different etching solution from that of the Si wafer 1 . 2 is a cavity provided in the Si wafer 1; 10a and 10b are cavities provided in the Si wafer 1 ;
With the slits provided in the SiO 2 film 10 , these cavities and slits can be made, for example, as follows. First, the surface of the Si wafer 1 was thermally oxidized in a steam atmosphere at 1100°C for several hours to a thickness of 1.0
A SiO 2 layer 10 of about μm is grown. Next, the SiO 2 layer 10 is etched by a known photoetching method using a photoresist pattern, for example, using ammonium fluoride, and then the Si wafer 1 is etched in the crystal direction using a silver glycol etching solution or the like. A groove of an appropriate depth is created by etching using an etching solution whose etching speed does not change much depending on the etching process. After that, both sides of the groove are actively etched using an etching liquid such as an ethylenediamine aqueous solution, which is a different etching liquid for Si and hardly attacks SiO 2 , and an undercut is made between both grooves. Penetrate cavity 2
Then, slits 10a and 10b are formed to form a bridge 10c of SiO 2 film. On the substrate formed in this manner, a substance that has a catalytic effect on the gas to be detected, such as Pt, or a resistor with a large temperature coefficient of resistance is coated with Pt.
A conductor layer 13 is formed by sputtering a substance mixed with Pd, Pd, etc., and lead wires 15a, 15b are provided on this conductor layer 13.
When a current is passed between b, the bridge portion 13a generates heat, and if flammable gas is present around it, it burns in the bridge portion 13a, changing its electrical resistance. Therefore, by detecting this change in electrical resistance, the presence of combustible gas can be detected. The conductor layer 13 may be made of a gas-sensitive material that is sensitive to carbon monoxide, chlorine, etc. and whose electrical resistance changes due to adsorption or adhesion of these substances, such as gas-sensitive material such as carbon dioxide (SiO 2 ). The body can also be used to detect gases other than flammable.

上述のごとき橋架状発熱部を有する橋架構造発
熱体によつて、発熱部にガス吸着物質例えば多孔
質膜を施すと、ガス吸着量を多くして検出感度を
高くすることができるが、膜が厚くなると、熱容
量が大きくなつて応答速度が低下し、また、膜の
厚み方向向の温度分布に帰因する膜の熱膨張のた
め、膜が剥がされやすくなる。そのため、発熱部
に施すガス吸着膜の厚さを、例えば、1μm程度
にして上述のごとき欠点が現われないようにする
必要があるが、厚みを薄くするとガス吸着量が減
少して検出感度が低下してしまう。
If a gas adsorbing material such as a porous membrane is applied to the heat generating part of a bridge structure heat generating element having a bridge heat generating part as described above, the amount of gas adsorbed can be increased and the detection sensitivity can be increased. As the thickness increases, the heat capacity increases and the response speed decreases, and the membrane becomes more likely to peel off due to thermal expansion of the membrane due to the temperature distribution in the thickness direction of the membrane. Therefore, it is necessary to make the thickness of the gas adsorption film applied to the heat generating part, for example, about 1 μm to prevent the above-mentioned defects from appearing. However, if the thickness is made thinner, the amount of gas adsorption decreases and the detection sensitivity decreases. Resulting in.

本発明は、上述のごとき実情に鑑みてなされた
もので、上記発熱部の上下両面に膜を形成してガ
ス吸着量を減らすことなくガス吸着物質膜の厚さ
を薄くした電熱器を提供しようとするものである
が、従来の薄膜形成方法、例えば、スパツタリン
グ法、蒸着法、或いは、プリント法等によつたも
のでは、発熱部の両面を形成させることはできな
い。そこで、本発明においては、前記第1図乃至
第3図に関して説明したごとくして製作した橋架
構造発熱体を形成する基板をスピナー上に載置
し、これら橋架構造発熱体に液状の膜形成物質を
スピナーの回転により塗布し、膜形成物質の粘度
とスピナーの回転数を調整することにより、発熱
部を橋架状に保持したまゝ、すなわち、発熱部の
下部に空洞を残したまゝ該発熱部に膜を形成でき
るようにしている。
The present invention has been made in view of the above-mentioned circumstances, and it is an object of the present invention to provide an electric heater in which a film is formed on both the upper and lower surfaces of the heat generating part to reduce the thickness of the gas adsorbing material film without reducing the amount of gas adsorbed. However, conventional thin film forming methods such as sputtering, vapor deposition, or printing cannot form both sides of the heat generating portion. Therefore, in the present invention, a substrate forming a bridge structure heating element manufactured as described above with reference to FIGS. is applied by rotating a spinner, and by adjusting the viscosity of the film-forming material and the rotational speed of the spinner, the heat-generating part can be coated while maintaining the heat-generating part in a bridge shape, that is, leaving a cavity at the bottom of the heat-generating part. This allows a film to be formed on the surface.

而して、本発明になる橋架構造発熱体をガス検
出器として使用する場合には、膜形成物質とし
て、例えば、微粒子アルミナ粉と、水と、微量の
バインダー(例えば、水ガラス等)とを混合して
液状にして、これをスピナーにて第1〜3図に示
した橋架構造発熱体に塗布する。その場合、膜形
成物質の粘度、スピナー回転数、及び、スピナー
の回転時間等を調整して膜厚を調整し、橋架構造
が保たれるようにする。斯様にして膜を形成した
後、100℃程度乾燥し、次いで、塩化白金酸溶液
(H2PtCl6)に浸し、400〜500℃で水素又はホルマ
リンガス中で還元し、白金黒を多孔アルミナ中に
分散させる。第4図乃至第6図は、上述のごとく
して膜を形成したの橋架構造発熱体の一例を示す
図で、第4図は平面図、第5図は第4図の―
線よりみた断面図、第6図は第4図の―線よ
りみた断面図で、20が本発明によつて形成され
た膜を示し、その他の参照番号は第1図乃至第3
図に付した参照番号と対応している。
When the cross-linked heating element of the present invention is used as a gas detector, for example, fine alumina powder, water, and a small amount of a binder (such as water glass) are used as film-forming substances. The mixture is mixed to form a liquid, and this is applied using a spinner to the bridge structure heating element shown in FIGS. 1 to 3. In that case, the film thickness is adjusted by adjusting the viscosity of the film-forming substance, the spinner rotation speed, the spinner rotation time, etc., so that the cross-linked structure is maintained. After forming a membrane in this manner, it is dried at about 100°C, then immersed in a chloroplatinic acid solution (H 2 PtCl 6 ), and reduced in hydrogen or formalin gas at 400 to 500°C to transform the platinum black into porous alumina. disperse inside. 4 to 6 are diagrams showing an example of a bridge structure heating element in which a film is formed as described above. FIG. 4 is a plan view, and FIG.
FIG. 6 is a cross-sectional view taken along the - line in FIG .
They correspond to the reference numbers given in the figures.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明が適用される橋架構造発熱体
の一例を説明するための平面図、第2図は、第1
図の―線よりみた断面図、第3図は、第1図
の―線よりみた断面図、第4図は、本発明に
よる橋架構造発熱体の一例を示す平面図、第5図
は第4図の―線よりみた断面図、第6図は、
第4図の―線よりみた断面図である。 ……Siウエハー、2……空洞、10……SiO2
膜、13a……発熱部、20……膜。
FIG. 1 is a plan view for explaining an example of a bridge structure heating element to which the present invention is applied, and FIG.
FIG. 3 is a sectional view taken along the line - in FIG. 1, FIG. 4 is a plan view showing an example of the bridge structure heating element according to the present invention, and FIG. Figure 6 is a cross-sectional view taken along the line - in the figure.
FIG. 4 is a sectional view taken along the line - in FIG. 4; 1 ...Si wafer, 2...cavity, 10 ...SiO 2
Membrane, 13a... Heat generating part, 20 ... Membrane.

Claims (1)

【特許請求の範囲】 1 表面の一部に空洞を有する基板と、前記空洞
部を橋架する橋架部とを有し、前記橋架部に導電
性発熱体を有し、該導電性発熱体に通電加熱して
前記橋架部を発熱部とする電熱器において、前記
橋架部の上下両面に膜を有することを特徴とする
電熱器。 2 橋架状発熱部を有する橋架構造発熱体の前記
橋架状発熱部の両面に膜を形成する方法であつ
て、前記橋架構造発熱体を形成する基板をスピナ
ー上に載置し、前記膜を形成させるための液状物
質を前記橋架構造発熱部の両面に前記スピナーに
より回転塗布するようにしたことを特徴とする電
熱器の製造方法。
[Scope of Claims] 1. A substrate having a cavity in a part of its surface, a bridge portion bridging the cavity portion, a conductive heating element in the bridge portion, and an electrically conductive heating element energized. An electric heater that heats and uses the bridge portion as a heat generating portion, characterized in that the electric heater has films on both upper and lower surfaces of the bridge portion. 2. A method of forming a film on both sides of the bridge-like heat generating element of a bridge-like heat generating element having a bridge-like heat generating element, the substrate forming the bridge-like heat generating element being placed on a spinner, and forming the film. 1. A method for manufacturing an electric heater, characterized in that a liquid substance for heating is applied by rotation to both surfaces of the bridge structure heating section using the spinner.
JP6139380A 1980-05-09 1980-05-09 Method for forming on both surfaces of heating part structured in bridging state Granted JPS56157846A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6139380A JPS56157846A (en) 1980-05-09 1980-05-09 Method for forming on both surfaces of heating part structured in bridging state

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6139380A JPS56157846A (en) 1980-05-09 1980-05-09 Method for forming on both surfaces of heating part structured in bridging state

Publications (2)

Publication Number Publication Date
JPS56157846A JPS56157846A (en) 1981-12-05
JPS6127704B2 true JPS6127704B2 (en) 1986-06-26

Family

ID=13169862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6139380A Granted JPS56157846A (en) 1980-05-09 1980-05-09 Method for forming on both surfaces of heating part structured in bridging state

Country Status (1)

Country Link
JP (1) JPS56157846A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH079411B2 (en) * 1986-03-24 1995-02-01 リコ−精器株式会社 Atmosphere detector

Also Published As

Publication number Publication date
JPS56157846A (en) 1981-12-05

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