JPS61274385A - 埋込型半導体レ−ザ - Google Patents

埋込型半導体レ−ザ

Info

Publication number
JPS61274385A
JPS61274385A JP11581985A JP11581985A JPS61274385A JP S61274385 A JPS61274385 A JP S61274385A JP 11581985 A JP11581985 A JP 11581985A JP 11581985 A JP11581985 A JP 11581985A JP S61274385 A JPS61274385 A JP S61274385A
Authority
JP
Japan
Prior art keywords
current blocking
type semiconductor
layer
impurity concentration
blocking layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11581985A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0482074B2 (pm
Inventor
Hiroshi Ishikawa
浩 石川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11581985A priority Critical patent/JPS61274385A/ja
Publication of JPS61274385A publication Critical patent/JPS61274385A/ja
Publication of JPH0482074B2 publication Critical patent/JPH0482074B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
JP11581985A 1985-05-29 1985-05-29 埋込型半導体レ−ザ Granted JPS61274385A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11581985A JPS61274385A (ja) 1985-05-29 1985-05-29 埋込型半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11581985A JPS61274385A (ja) 1985-05-29 1985-05-29 埋込型半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS61274385A true JPS61274385A (ja) 1986-12-04
JPH0482074B2 JPH0482074B2 (pm) 1992-12-25

Family

ID=14671886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11581985A Granted JPS61274385A (ja) 1985-05-29 1985-05-29 埋込型半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS61274385A (pm)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63224282A (ja) * 1987-03-12 1988-09-19 Fujitsu Ltd 半導体発光素子
US4849372A (en) * 1987-02-18 1989-07-18 Mitsubishi Kenki Kabushiki Kaisha Semiconductor laser device and a method of producing same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58223395A (ja) * 1982-06-21 1983-12-24 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS5957486A (ja) * 1982-09-27 1984-04-03 Nec Corp 埋め込み形半導体レ−ザ
JPS59175783A (ja) * 1983-03-25 1984-10-04 Fujitsu Ltd 半導体発光装置
JPS6077486A (ja) * 1983-10-05 1985-05-02 Matsushita Electric Ind Co Ltd 半導体レ−ザ素子の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58223395A (ja) * 1982-06-21 1983-12-24 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS5957486A (ja) * 1982-09-27 1984-04-03 Nec Corp 埋め込み形半導体レ−ザ
JPS59175783A (ja) * 1983-03-25 1984-10-04 Fujitsu Ltd 半導体発光装置
JPS6077486A (ja) * 1983-10-05 1985-05-02 Matsushita Electric Ind Co Ltd 半導体レ−ザ素子の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4849372A (en) * 1987-02-18 1989-07-18 Mitsubishi Kenki Kabushiki Kaisha Semiconductor laser device and a method of producing same
US4910745A (en) * 1987-02-18 1990-03-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
JPS63224282A (ja) * 1987-03-12 1988-09-19 Fujitsu Ltd 半導体発光素子

Also Published As

Publication number Publication date
JPH0482074B2 (pm) 1992-12-25

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term