JPS6126412B2 - - Google Patents
Info
- Publication number
- JPS6126412B2 JPS6126412B2 JP58038501A JP3850183A JPS6126412B2 JP S6126412 B2 JPS6126412 B2 JP S6126412B2 JP 58038501 A JP58038501 A JP 58038501A JP 3850183 A JP3850183 A JP 3850183A JP S6126412 B2 JPS6126412 B2 JP S6126412B2
- Authority
- JP
- Japan
- Prior art keywords
- vacuum pump
- supply conduit
- air
- air ejector
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 48
- 238000006243 chemical reaction Methods 0.000 claims description 22
- 238000004140 cleaning Methods 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 16
- 239000012495 reaction gas Substances 0.000 claims description 15
- 238000001035 drying Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 3
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- IEXRMSFAVATTJX-UHFFFAOYSA-N tetrachlorogermane Chemical compound Cl[Ge](Cl)(Cl)Cl IEXRMSFAVATTJX-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
Landscapes
- Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
- Applications Or Details Of Rotary Compressors (AREA)
- Treating Waste Gases (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Prevention Of Fouling (AREA)
- Cleaning By Liquid Or Steam (AREA)
Description
【発明の詳細な説明】
(a) 発明の技術分野
本発明は化学反応ガスの排気装置に関し、特に
空気エゼクタ及び水封型真空ポンプを含む排気系
における排気装置の改良に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to an exhaust system for chemically reactive gases, and more particularly to an improvement in an exhaust system in an exhaust system including an air ejector and a water ring vacuum pump.
(b) 技術の背景
集積回路の基板等に薄膜又は回路パターンを化
学的に形成する装置として、通常減圧CVD、プ
ラズマCVD又はプラズマエツチング、リアクテ
イブイオンエツチング等の化学反応装置が用いら
れる。この種の装置では反応処理室を真空状態に
保ち、反応ガスを反応処理室の一方から連続的に
流入させると共に他方から排気させる。このため
反応処理室のガスを反応処理室から吸出して該処
理室内を真空状態に保つと共に反応ガスを排気さ
せるための排気装置を設けている。反応ガスによ
つては腐食性のある反応ガスが排出されるため水
封型真空ポンプを用い、これと空気エゼクタとを
組合せて構成される排気装置が用いられる。水分
と反応し分解し易い反応ガスを排気する場合、例
えばフツ化タングステン（WF6）、塩化チタン
（Ticl4）、塩化硼素（Bcl3）、塩化硅素（Sicl4）、
塩化ゲルマニウム（Gecl4）、塩化アルミニウム
（Alcl3）等の反応ガスと水分が反応して生成する
固形物が空気エゼクタの内壁に付着し、排出する
反応ガスの流れを阻害するため上記固形物を除去
する洗浄水供給機構を備えた排気装置が提供され
ている。(b) Background of the Technology Chemical reaction devices such as low pressure CVD, plasma CVD, plasma etching, and reactive ion etching are usually used as devices for chemically forming thin films or circuit patterns on integrated circuit substrates, etc. In this type of apparatus, a reaction chamber is kept in a vacuum state, and a reaction gas is continuously introduced into one side of the reaction chamber and exhausted from the other side. For this reason, an exhaust device is provided for sucking out the gas in the reaction processing chamber to keep the inside of the processing chamber in a vacuum state and for exhausting the reaction gas. Since some reaction gases are corrosive, a water ring vacuum pump is used, and an exhaust system is used which is constructed by combining this with an air ejector. When exhausting reactive gases that react with moisture and easily decompose, examples include tungsten fluoride (WF 6 ), titanium chloride (Ticl 4 ), boron chloride (Bcl 3 ), silicon chloride (Sicl 4 ),
Solids produced by the reaction of moisture with reaction gases such as germanium chloride (Gecl 4 ) and aluminum chloride (Alcl 3 ) adhere to the inner wall of the air ejector and obstruct the flow of the reaction gas to be discharged. An exhaust system is provided that includes a cleaning water supply mechanism for removal.
(c) 従来技術と問題点
第１図は従来の洗浄水供給機構を有する化学反
応ガス排気装置のブロツク図、第２図は第１図の
空気エゼクタと水封型真空ポンプ部を示す要部断
面図である。第１図において、反応処理室１の排
気口２に開閉弁３ａを備えた第１排気導管３の一
端が接続されその他端は第１真空ポンプ４の吸込
口に接続され、第１真空ポンプ４は第２排気導管
６を介して第２真空ポンプ５に、更に第２真空ポ
ンプ５は空気エゼクタ７に開閉弁８ａを備えた第
３排気導管８を介して接続される。接続部は外気
を遮断するためのＯリング１６を設けている。空
気エゼクタ７は水封型真空ポンプ９に接続して構
成される。第１真空ポンプ４、及び第２真空ポン
プ５にはルーツ型ブロア（別名メカニカルブース
ターを使用するのが一般的である。このように構
成される排気装置は水封型真空ポンプ９、空気エ
ゼクタ７第２真空ポンプ５、第１真空ポンプ４の
順次多段式に減圧するが水封型真空ポンプ９は封
水の蒸気圧以下に減圧することが出来ず、その到
達圧力（到達真空度）は封水が15℃の場合で
20Torr程度である。例えば第１図に示す排気装
置における各真空ポンプの到達圧力は水封型真空
ポンプ９で約20Torr、空気エゼクタで約6Torr、
第２真空ポンプで約0.5Torr、第１真空ポンプで
約0.03Torrでなり、従つて反応処理室１内は約
0.03Torrの真空度に保たれることになる。空気エ
ゼクタ７の上方部に配設した空気供給導管１０に
洗浄水供給用の分岐導管１１を分岐配設し更に分
岐部１２の上流方向に図のように第１開閉弁１３
及び第２開閉弁１４よりなる洗浄水供給機構を設
ける。洗浄水供給機構の操作は第２図に示すよう
に開閉弁８ａ，１３，１４の開閉により行なわれ
る。まづ開閉弁８ａ，１３を開放し、開閉弁１４
を閉鎖することにより反応ガスの排気が行なわれ
る。空気供給導管１０に吸込まれて空気は噴出ノ
ズル１５から空気エゼクタ７のスロート部７ａを
超音速で流れ、つゞいてデイフユーザ部７ｂで断
熱膨張しながら流れて排出反応ガスを吸引しデイ
フユーザ部７ｂ内における封水の水蒸気とともに
水封型真空ポンプ９に向けて流動する。この場合
水蒸気の一部が逆流してデイフユーザ部及びスロ
ート部の内壁上に浸入し、そこで排出反応ガスと
化学反応して固形物が生成し上記内壁内に付着し
堆積する。例えばBcl3（塩化硼素）の反応ガスを
排気する場合このガスが水蒸気の水分と反応して
反応式〔2Bcl3＋3H2O→B2O3＋6Hcl〕で示される
ようにB2O3（酸化硼素）とHcl（塩化水素）が生
成され、このHclは気体であるので排出されるが
B2O3は固形物として付着する。この固形物を除
去するために水封型真空ポンプ９を作動させた
まゝ開閉弁８ａ，１３を閉鎖し、第２開閉弁１４
を開放することにより分岐導管１１から洗浄水が
注入され噴出ノズル１５より噴出し、この噴出流
によつて空気エゼクタ７の内壁に付着する固形物
が１〜２分程度で徐去される。次いで第２開閉弁
１４を閉鎖し、第１開閉弁１３を開放することに
より噴出ノズル１５から空気が噴出され上記空気
エゼクタ部を乾燥させる。しかしこの方法は噴出
ノズル１５近傍に付着する固形物の除去に対して
は効果がない。処理装置を連続使用した場合固形
物の生成はデイフユーザ部７ｂ、フロート部７ａ
更に噴出ノズル１５近傍まで順次堆積され、噴出
ノズル１５近傍に生成される固形物除去のための
有効な手段が必要である。(c) Prior art and problems Figure 1 is a block diagram of a conventional chemical reaction gas exhaust system with a cleaning water supply mechanism, and Figure 2 shows the main parts of the air ejector and water ring vacuum pump shown in Figure 1. FIG. In FIG. 1, one end of a first exhaust conduit 3 equipped with an on-off valve 3a is connected to an exhaust port 2 of a reaction processing chamber 1, and the other end is connected to a suction port of a first vacuum pump 4. is connected to a second vacuum pump 5 via a second exhaust conduit 6, and the second vacuum pump 5 is further connected to an air ejector 7 via a third exhaust conduit 8 provided with an on-off valve 8a. The connection part is provided with an O-ring 16 for blocking outside air. The air ejector 7 is connected to a water ring vacuum pump 9. A Roots-type blower (also known as a mechanical booster) is generally used for the first vacuum pump 4 and the second vacuum pump 5. The second vacuum pump 5 and the first vacuum pump 4 sequentially reduce the pressure in a multistage manner, but the water ring type vacuum pump 9 cannot reduce the pressure below the vapor pressure of the sealed water, and its ultimate pressure (achieved vacuum degree) is When the water is 15℃
It is about 20 Torr. For example, the ultimate pressure of each vacuum pump in the exhaust system shown in Fig. 1 is approximately 20 Torr for the water ring vacuum pump 9, approximately 6 Torr for the air ejector,
The pressure in the second vacuum pump is approximately 0.5 Torr, and the pressure in the first vacuum pump is approximately 0.03 Torr. Therefore, the inside of the reaction processing chamber 1 is approximately
It will be maintained at a vacuum level of 0.03 Torr. A branch conduit 11 for supplying cleaning water is branched to an air supply conduit 10 disposed above the air ejector 7, and a first on-off valve 13 is further provided in the upstream direction of the branch part 12 as shown in the figure.
A wash water supply mechanism including a second on-off valve 14 is provided. The cleaning water supply mechanism is operated by opening and closing valves 8a, 13, and 14, as shown in FIG. First, open the on-off valves 8a and 13, and then open the on-off valve 14.
By closing the reactor gas, the reaction gas is exhausted. The air sucked into the air supply conduit 10 flows from the jet nozzle 15 through the throat part 7a of the air ejector 7 at supersonic speed, and then flows through the diffuser part 7b while expanding adiabatically, sucking the discharged reaction gas and flowing into the diffuser part 7b. It flows toward the water ring type vacuum pump 9 together with the water vapor of the seal water. In this case, a portion of the water vapor flows back and enters the inner walls of the diffuser section and the throat section, where it chemically reacts with the discharged reaction gas to produce solid matter, which adheres and accumulates within the inner walls. For example , when exhausting the reactive gas of Bcl 3 (boron chloride), this gas reacts with water vapor, resulting in B 2 O 3 ( oxidized (Boron) and HCl (Hydrogen Chloride) are produced, and since this HCl is a gas, it is emitted.
B 2 O 3 is deposited as a solid. In order to remove this solid matter, the on-off valves 8a and 13 are closed while the water ring vacuum pump 9 is operated, and the second on-off valve 14 is closed.
By opening the air ejector 7, cleaning water is injected from the branch conduit 11 and ejected from the ejection nozzle 15, and solid matter adhering to the inner wall of the air ejector 7 is gradually removed in about 1 to 2 minutes by this ejected flow. Then, by closing the second on-off valve 14 and opening the first on-off valve 13, air is ejected from the ejection nozzle 15 to dry the air ejector section. However, this method is not effective in removing solid matter adhering to the vicinity of the jet nozzle 15. When the processing device is used continuously, solid matter is generated in the diffuser section 7b and the float section 7a.
Furthermore, an effective means is required for removing the solid matter that is sequentially deposited up to the vicinity of the jet nozzle 15 and generated in the vicinity of the jet nozzle 15.
(d) 発明の目的
本発明は上記の欠点に鑑み、空気エゼクタ内壁
全般に亘つて洗浄可能な洗浄水供給機構を有する
化学反応ガス排気装置の提供を目的とする。(d) Object of the Invention In view of the above-mentioned drawbacks, the object of the present invention is to provide a chemically reactive gas exhaust device having a cleaning water supply mechanism capable of cleaning the entire inner wall of the air ejector.
(e) 発明の構成
上記目的は本発明によれば空気エゼクタを介し
て水封型真空ポンプがガス反応処理室の排気口に
連続された化学反応ガス排気装置であつて、該空
気エゼクタは空気供給導管と該空気供給導管より
もガス反応処理室側に設けられたシヤワー式ノズ
ルを備える洗浄水供給導管及び乾燥用ガス供給導
管を具備することによつて達せられる。(e) Structure of the Invention According to the present invention, the above object is a chemical reaction gas exhaust device in which a water ring vacuum pump is connected to an exhaust port of a gas reaction processing chamber via an air ejector, and the air ejector This can be achieved by providing a cleaning water supply conduit and a drying gas supply conduit each including a supply conduit and a shower type nozzle provided closer to the gas reaction processing chamber than the air supply conduit.
(f) 発明の実施例
以下本発明の実施例を図面により詳述する。第
３図は本発明の一実施例である洗浄水供給機構を
有する化学反応ガス排気装置のブロツク図、第４
図は第３図の空気エゼクタと水封型真空ポンプ部
を示す要部断面図である。図において空気エゼク
タ２１と反応処理室間は排気導管を介して接続し
その接続部はＯリング３３により外気を遮断す
る。空気エゼクタ２１に空気供給導管２２を配設
し、更に空気供給導管２２の上方部に洗浄水供給
導管２３を設け、この洗浄水供給導管２３と分岐
する圧気供給導管２４を設ける。分岐部２５の上
流位置に圧気供給導管２４には第１の開閉弁２６
をまた洗浄水供給導管２３には第２の開閉弁２７
を設けて成る洗浄水供給機構を構成する。その操
作は開閉弁２９を開放し開閉弁２６，２７を閉鎖
し通常の排気を行う。洗浄サイクルでは、第２真
空ポンプ２８と空気エゼクタ２１間に配設した開
閉弁２９及び圧気供給導管２４の開閉弁２６を閉
鎖し、洗浄水供給管２３の開閉弁２７を開放する
ことにより第４図に示すようにシヤワー式のノズ
ル３０より洗浄水が噴出し、空気エゼクタ２１の
内壁全般に亘つて洗浄する。これにより空気供給
導管２２の噴出ノズル３１近傍に付着する反応ガ
スの固形物もフロート部、デイフユーザ部に付着
する固形物と同様に除去される。しかる後に洗浄
水供給導管２３の開閉弁２７を閉鎖し圧気供給導
管２４の開閉弁２６を開放し、圧縮空気又は窒素
ガスをシヤワー式のノズル３０より噴出させ空気
エゼクタ２１の内壁を乾燥させることにより洗浄
サイクルは完了する。通常水封型真空ポンプ３２
を作動させたまゝ処理するが洗浄時停止させても
よい。(f) Examples of the invention Examples of the invention will be described in detail below with reference to the drawings. FIG. 3 is a block diagram of a chemical reaction gas exhaust system having a cleaning water supply mechanism, which is an embodiment of the present invention.
This figure is a sectional view of essential parts showing the air ejector and water ring type vacuum pump section of FIG. 3. In the figure, the air ejector 21 and the reaction processing chamber are connected through an exhaust conduit, and the connection portion is shut off from outside air by an O-ring 33. An air supply conduit 22 is disposed in the air ejector 21, a wash water supply conduit 23 is provided above the air supply conduit 22, and a pressurized air supply conduit 24 is provided which branches from the wash water supply conduit 23. A first on-off valve 26 is provided in the pressurized air supply conduit 24 at a position upstream of the branch portion 25.
In addition, a second on-off valve 27 is provided in the wash water supply conduit 23.
A cleaning water supply mechanism is constructed by providing a washing water supply mechanism. In this operation, the on-off valve 29 is opened, the on-off valves 26 and 27 are closed, and normal exhaustion is performed. In the cleaning cycle, the on-off valve 29 disposed between the second vacuum pump 28 and the air ejector 21 and the on-off valve 26 of the pressurized air supply pipe 24 are closed, and the on-off valve 27 of the wash water supply pipe 23 is opened. As shown in the figure, cleaning water is jetted out from a shower type nozzle 30 and cleans the entire inner wall of the air ejector 21. As a result, the solid matter of the reaction gas adhering to the vicinity of the jet nozzle 31 of the air supply conduit 22 is also removed in the same way as the solid matter adhering to the float section and the diffuser section. Thereafter, the on-off valve 27 of the cleaning water supply conduit 23 is closed, the on-off valve 26 of the pressurized air supply conduit 24 is opened, and compressed air or nitrogen gas is ejected from the shower type nozzle 30 to dry the inner wall of the air ejector 21. The wash cycle is complete. Normal water ring type vacuum pump 32
Processing is carried out while it is running, but it may be stopped during cleaning.
第５図は本発明の他の実施例である洗浄水供給
機構を示す要部断面図である。洗浄水供給機構の
他の例として、独立した洗浄水供給導管２３′と
圧気供給導管２４′を図のように用い、それぞれ
の導管先端に備えたノズルから所定の洗浄水又は
圧気を噴出させることができる。このように本排
気装置では上記の開閉弁の開閉操作のみで簡便に
洗浄が可能となりその操作は手動で行なつてもよ
くまた制御装置により自動化も容易である。 FIG. 5 is a sectional view of essential parts showing a wash water supply mechanism according to another embodiment of the present invention. Another example of the cleaning water supply mechanism is to use an independent cleaning water supply conduit 23' and a pressurized air supply conduit 24' as shown in the figure, and spray a predetermined amount of cleaning water or pressurized air from a nozzle provided at the tip of each conduit. I can do it. As described above, in this exhaust system, cleaning can be easily performed by simply opening and closing the above-mentioned on-off valve, and this operation may be performed manually or can be easily automated using a control device.
(g) 発明の効果
以上詳細に説明したように本発明の洗浄水供給
機構を有する化学反応ガス排気装置により簡便に
空気エゼクタ内壁を洗浄でき省力化及び装置の稼
動率を向上させる等大きな効果がある。(g) Effects of the Invention As explained in detail above, the chemical reaction gas exhaust device having the cleaning water supply mechanism of the present invention can easily clean the inner wall of the air ejector, and has great effects such as saving labor and improving the operating rate of the device. be.
第１図は従来の洗浄水供給機構を有する化学反
応ガス排気装置のブロツク図、第２図は第１図の
空気エゼクタと水封型真空ポンプ部を示す要部断
面図、第３図は本発明の一実施例である洗浄水供
給機構を有する化学反応ガス排気装置のブロツク
図、第４図は第３図の空気エゼクタと水封真空ポ
ンプ部を示す要部断面図、第５図は本発明の他の
実施例である洗浄水供給機構を示す要部断面図で
ある。
図中７，２１……空気エゼクタ、１０，２２…
…空気供給導管、１１，２３……洗浄水供給導
管、２４……圧気供給導管、１２，２５……分岐
部、１３，１４，２６，２７，２９……開閉弁、
４，５，２８……真空ポンプ、１５，３０，３１
……噴出ノズル、９，３２……水封型真空ポン
プ。
Figure 1 is a block diagram of a chemical reaction gas exhaust system with a conventional cleaning water supply mechanism, Figure 2 is a cross-sectional view of the main parts showing the air ejector and water ring type vacuum pump part of Figure 1, and Figure 3 is the main part of the system. A block diagram of a chemical reaction gas exhaust system having a cleaning water supply mechanism according to an embodiment of the invention, FIG. 4 is a cross-sectional view of essential parts showing the air ejector and water seal vacuum pump section of FIG. 3, and FIG. FIG. 7 is a cross-sectional view of main parts showing a wash water supply mechanism according to another embodiment of the invention. In the figure, 7, 21... air ejector, 10, 22...
... Air supply conduit, 11, 23 ... Washing water supply conduit, 24 ... Pressure air supply pipe, 12, 25 ... Branch section, 13, 14, 26, 27, 29 ... Opening/closing valve,
4, 5, 28...vacuum pump, 15, 30, 31
...Blowout nozzle, 9,32...Water ring vacuum pump.
Claims (1)
が、ガス反応処理室の排気口に連結された化学反
応ガス排気装置であつて、該空気エゼクタは空気
供給導管と、該空気供給導管よりもガス反応処理
室側に設けられたシヤワー式ノズルを備える洗浄
水供給導管及び乾燥用ガス供給導管を具備してい
ることを特徴とする化学反応ガス排気装置。1 A chemical reaction gas exhaust device in which a water ring vacuum pump is connected to an exhaust port of a gas reaction treatment chamber via an air ejector, the air ejector being connected to an air supply conduit and a gas A chemical reaction gas exhaust device characterized by comprising a cleaning water supply conduit and a drying gas supply conduit equipped with a shower type nozzle provided on the side of a reaction processing chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58038501A JPS59162939A (en) | 1983-03-09 | 1983-03-09 | Chemical reaction gas exhaust apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58038501A JPS59162939A (en) | 1983-03-09 | 1983-03-09 | Chemical reaction gas exhaust apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59162939A JPS59162939A (en) | 1984-09-13 |
| JPS6126412B2 true JPS6126412B2 (en) | 1986-06-20 |
Family
ID=12527009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58038501A Granted JPS59162939A (en) | 1983-03-09 | 1983-03-09 | Chemical reaction gas exhaust apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59162939A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6359337A (en) * | 1986-08-30 | 1988-03-15 | Furukawa Electric Co Ltd:The | Method and apparatus for treating exhaust gas |
| JP4805463B2 (en) * | 2001-01-26 | 2011-11-02 | 株式会社東設 | Toxic gas abatement equipment |
| JP5067406B2 (en) * | 2009-08-26 | 2012-11-07 | 信越半導体株式会社 | Silicon single crystal manufacturing method and silicon single crystal manufacturing apparatus |
| GB2540582A (en) * | 2015-07-22 | 2017-01-25 | Edwards Ltd | Apparatus for evacuating a corrosive effluent gas stream from a processing chamber |
-
1983
- 1983-03-09 JP JP58038501A patent/JPS59162939A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59162939A (en) | 1984-09-13 |
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