JPS6211196B2 - - Google Patents
Info
- Publication number
- JPS6211196B2 JPS6211196B2 JP56209068A JP20906881A JPS6211196B2 JP S6211196 B2 JPS6211196 B2 JP S6211196B2 JP 56209068 A JP56209068 A JP 56209068A JP 20906881 A JP20906881 A JP 20906881A JP S6211196 B2 JPS6211196 B2 JP S6211196B2
- Authority
- JP
- Japan
- Prior art keywords
- conduit
- exhaust
- air ejector
- air
- valve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 32
- 238000006243 chemical reaction Methods 0.000 claims description 29
- 238000004140 cleaning Methods 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 19
- 239000012495 reaction gas Substances 0.000 claims description 16
- 239000012530 fluid Substances 0.000 claims description 5
- 238000011144 upstream manufacturing Methods 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 description 9
- 239000003921 oil Substances 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- IEXRMSFAVATTJX-UHFFFAOYSA-N tetrachlorogermane Chemical compound Cl[Ge](Cl)(Cl)Cl IEXRMSFAVATTJX-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
- F04B37/00—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00
- F04B37/10—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for special use
- F04B37/14—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for special use to obtain high vacuum
- F04B37/16—Means for nullifying unswept space
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
- Jet Pumps And Other Pumps (AREA)
Description
【発明の詳細な説明】
(1) 発明の技術分野
本発明は化学反応ガスの排気装置に関し、特に
空気エゼクタ及び水封型真空ポンプを含む排気装
置に関する。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to an exhaust system for chemically reactive gases, and more particularly to an exhaust system including an air ejector and a water ring vacuum pump.
(2) 技術の背景
集積回路の基板等に薄膜又は回路パターンを化
学的に形成するために、減圧CVD（chemical
Vapor Deposition）、プラズマCVD、又はプラズ
マエツチング、リアクテイブイオンエツチング等
の化学反応装置が用いられる。この種の装置では
反応室を真空状態に保ち、反応ガスを反応室の一
方から連続的に流入させると共に他方から排気さ
せる必要がある。このため、反応後のガスを反応
室から吸出して反応室を真空状に保つと共に上記
ガスを排出するための排気装置が設けられてい
る。この排気装置にロータリ型真空ポンプが用い
られたものがあつた。しかし、この排気装置で
は、排気する反応ガスの影響によるロータリ型真
空ポンプの腐食、ポンプ油の劣化及びこの劣化に
起因するポンプの故障、あるいはポンプ油交換に
手間がかかる等の問題があり実用的でなかつた。(2) Background of the technology In order to chemically form thin films or circuit patterns on integrated circuit substrates, low pressure CVD (chemical
A chemical reaction device such as vapor deposition, plasma CVD, plasma etching, or reactive ion etching is used. In this type of apparatus, it is necessary to maintain the reaction chamber in a vacuum state, and to allow the reaction gas to continuously flow in from one side of the reaction chamber and to exhaust it from the other side. For this reason, an exhaust device is provided to suck out the gas after the reaction from the reaction chamber to keep the reaction chamber in a vacuum state and to discharge the gas. Some of these exhaust devices used rotary vacuum pumps. However, with this exhaust system, there are problems such as corrosion of the rotary vacuum pump due to the influence of the reactive gas being exhausted, deterioration of the pump oil and pump failure due to this deterioration, and the time-consuming process of replacing the pump oil, making it impractical. It wasn't.
これらの問題を解決する対策として、上記ロー
タリ型真空ポンプの代りに水封型真空ポンプを採
用し、これと空気エゼクタとを組合せて構成され
た排気装置が提案され用いられている。この排気
装置の場合はポンプ油の劣化等の問題は解決され
たが、新たに別の問題を含んでいる。すなわち、
WF6（六フツ化タングスン）、TiCl4（四塩化チタ
ン）、BCl3（三塩化硼素）、SiCl4（四塩化珪素）、
GeCl4（四塩化ゲルマニウム）、AlCl3（三塩化ア
ルミニウム）等のように水分と反応して分解し易
い反応ガスを排気する場合には、これらのガスと
水分が反応して固形物が生成される。そしてこれ
らの固形物が空気エゼクタの内壁等に付着して排
出反応ガスの流れを阻害し排気性能を低下させる
という問題がある。従つて、これらの付着固形物
を取り除くために、定期的又は必要に応じてひん
ぱんに空気エゼクタの分解洗浄が必要である。こ
の分解洗浄は人手（作業者）を必要とし、手間が
かかる。またこのために排気装置の稼働率を低下
させる結果になる。従つて、分解せずに空気エゼ
クタ内壁の洗浄が簡便に行ない得る排気装置が要
望されている。 As a measure to solve these problems, an exhaust system has been proposed and used in which a water ring vacuum pump is used in place of the rotary vacuum pump, and this is combined with an air ejector. In the case of this exhaust system, problems such as deterioration of pump oil have been solved, but new problems have arisen. That is,
WF 6 (tungsten hexafluoride), TiCl 4 (titanium tetrachloride), BCl 3 (boron trichloride), SiCl 4 (silicon tetrachloride),
When exhausting reactive gases that easily decompose by reacting with moisture, such as GeCl 4 (germanium tetrachloride) and AlCl 3 (aluminum trichloride), these gases and moisture may react to form solids. Ru. There is a problem in that these solids adhere to the inner wall of the air ejector, etc., obstructing the flow of the exhaust reaction gas and deteriorating the exhaust performance. Therefore, in order to remove these adhered solids, it is necessary to disassemble and clean the air ejector periodically or as often as necessary. This disassembly and cleaning requires manual labor (operators) and is time-consuming. This also results in a reduction in the operating rate of the exhaust system. Therefore, there is a need for an exhaust device that can easily clean the inner wall of the air ejector without disassembling it.
(3) 従来技術と問題点
第１図は従来の化学反応ガス排気装置のブロツ
ク図、第２図は第１図の空気エゼクタ７と水封型
真空ポンプ８の部分の縦断面図である。両図にお
いて、符号１はガス反応室、１ａは反応室１の排
気口、２は開閉弁２ａを備えた第１排気導管、３
は第１メカニカルブースタ（真空ポンプ）、４は
第２排気導管、５は第２メカニカルブースタ（真
空ポンプ）、６は第３排気導管、７は空気エゼク
タ、７ａは空気エゼクタの噴出ノズル、７ｂは空
気供給導管、７ｃはスロート部分、7dはデイフ
ユーザ部分、８は水封型真空ポンプ、８ａと８ｂ
はそれぞれ水封型真空ポンプ８の吸込導管と吐出
導管、８ｃは封水、８ｄは吸込口、８ｅは吐出口
をそれぞれ示す。第１図において、反応室１の排
気口１ａに第１排気導管２の一端が接続され、そ
の他端が第１メカニカルブースタ３の吸込口に接
続されている。第１メカニカルブースタ３の吐出
口は第２メカニカルブースタ５の吸込口に第２排
気導管４を介して接続されている。第２ブースタ
５の吐出口は空気エゼクタ７に第３排気導管６を
介して接続されている。空気エゼクタ７の吐出口
は水封型真空ポンプ８の吸込導管８ａに接続され
ている。この排気装置は以上の如く構成されたも
ので、水封型真空ポンプ８、空気エゼクタ７、第
２メカニカルブースタ５、第１メカニカルブース
タ３の順に順次多段式に減圧するように構成され
ている。水封型真空ポンプ８は封水８ｃの蒸気圧
以下に減圧することができず、その到達圧力（到
達真空度）は封水８ｃが常温の場合で大体20トー
ル（１トール＝１mmHg）程度である。例えば、
第１図の排気装置における各真空ポンプの到達圧
力は、水封型真空ポンプ８で約20トール、空気エ
ゼクタ７で約６トール、第２メカニカルブースタ
５で約0.5トール、第１メカニカルブースタ３で
約0.03トールである。従つて、反応室１内は約
0.03トールの真空度に保たれることになる。第１
図において、反応ガスは矢印Ａ方向から反応室１
に吸込まれ、反応室１内を流れながら反応作用を
して排気口１ａを介して排気導管２に吸込まれ、
次いで矢印Ｂ方向に上記第１、第２ブースタ３，
５及び空気エゼクタ７を通過して水封ポンプ８か
ら吐出導管８ｂを介して排気される。尚、エツチ
ング装置の場合は、上記排気ガスに対しさらに基
板から奪取したガスも混入して排気される。この
排気装置の場合は、前述のWF6、TiCl4、BCl3等
のガスを排気しても、これらのガスが水封型真空
ポンプ８の封水８ｃにほとんど溶け込んで排出さ
れるのでポンプ８内に残留せず、また第１及び第
２メカニカルブースタは密封用のポンプ油を使用
していないので、前述のポンプ油の劣化等の問題
がなく良好に反応ガスが排気される。しかしなが
ら、この装置ではポンプ油劣化の問題は解消され
たが、水封型真空ポンプ８を用いているため、す
なわち密封用として封水８ｃを用いているために
別の問題がある。この問題について、第２図を参
照して説明する。第２図において、空気供給導管
７ｂに吸込まれた空気は噴出ノズル７ａから噴出
され、スロート部７ｂを矢印Ｄ方向に超音速で流
れ、つづいてデイフユーザ部分７ｄで断熱膨張し
ながら流れて、導管６内の排出反応ガスを矢印Ｅ
方向に吸引しかつデイフユーザ７ｄ内における封
水８ｃの水蒸気と共に水封ポンプ８に向けて流動
する。しかしながら、この場合水蒸気の一部が逆
流してデイフユーザ部分７ｄ及びスロート部分７
ｃの内壁上に侵入し、そこで排出反応ガスと化学
反応して固形物が生成される。この固形物が上記
内壁上に付着堆積する。例えば、BCl3（三塩化
硼素）の反応ガスを排気する場合は、このガスが
水蒸気の水分と反応して、反応式「2BCl3＋3H2O
→B2O3＋6HCl」で示されるようにB2O3（酸化硼
素）とHCl（塩化水素）が生成される。このHCl
は気体であるので排出されるがB2O3は上記内壁
上に固形物として付着する。特に、スロート部分
７ｃの内壁上に固形物が付着すると、該内壁部に
おける流体通路の横断面形状及び断面積が縮小変
形して排出ガスの流れが悪影響をうけ排気装置の
排気性能が低下する。従つてこの排気装置は、こ
のような付着固形物を取り除くために、定期的又
は必要に応じてひんぱんにスロート７ｃとデイフ
ユーザ７ｄの部分を分解して洗浄する必要があ
る。この分解洗浄は必ず人手（作業者）を必要と
し、煩雑で手間がかかる。例えば、この分解洗浄
作業に１時間程度の時間を必要とする。従つてこ
の分解洗浄のために排気装置の稼動率が著しく低
下され、この結果化学反応装置の稼動率も低下す
る。(3) Prior Art and Problems FIG. 1 is a block diagram of a conventional chemical reaction gas exhaust system, and FIG. 2 is a longitudinal sectional view of the air ejector 7 and water ring vacuum pump 8 in FIG. 1. In both figures, reference numeral 1 is a gas reaction chamber, 1a is an exhaust port of the reaction chamber 1, 2 is a first exhaust conduit equipped with an on-off valve 2a, and 3 is a gas reaction chamber.
is the first mechanical booster (vacuum pump), 4 is the second exhaust pipe, 5 is the second mechanical booster (vacuum pump), 6 is the third exhaust pipe, 7 is the air ejector, 7a is the jet nozzle of the air ejector, and 7b is the Air supply conduit, 7c is the throat part, 7d is the differential user part, 8 is the water ring type vacuum pump, 8a and 8b
8c, 8d, and 8e respectively indicate a suction conduit and a discharge conduit of the water ring type vacuum pump 8, a water seal, 8d, and a discharge port, respectively. In FIG. 1, one end of the first exhaust conduit 2 is connected to the exhaust port 1a of the reaction chamber 1, and the other end is connected to the suction port of the first mechanical booster 3. The discharge port of the first mechanical booster 3 is connected to the suction port of the second mechanical booster 5 via a second exhaust conduit 4. The outlet of the second booster 5 is connected to the air ejector 7 via a third exhaust conduit 6. A discharge port of the air ejector 7 is connected to a suction conduit 8a of a water ring vacuum pump 8. This exhaust system is configured as described above, and is configured to reduce the pressure in a multistage manner in order of the water ring vacuum pump 8, the air ejector 7, the second mechanical booster 5, and the first mechanical booster 3. The water ring type vacuum pump 8 cannot reduce the pressure below the vapor pressure of the seal water 8c, and its ultimate pressure (achieved vacuum degree) is approximately 20 torr (1 torr = 1 mmHg) when the seal water 8c is at room temperature. be. for example,
The ultimate pressure of each vacuum pump in the exhaust system shown in FIG. It is approximately 0.03 torr. Therefore, the inside of reaction chamber 1 is approximately
It will be maintained at a vacuum level of 0.03 Torr. 1st
In the figure, the reaction gas flows into the reaction chamber 1 from the direction of arrow A.
, reacts while flowing in the reaction chamber 1, and is sucked into the exhaust pipe 2 through the exhaust port 1a,
Next, in the direction of arrow B, the first and second boosters 3,
5 and the air ejector 7, and is exhausted from the water ring pump 8 via the discharge conduit 8b. In the case of an etching apparatus, the exhaust gas is further mixed with gas taken from the substrate and exhausted. In the case of this exhaust device, even if the aforementioned gases such as WF 6 , TiCl 4 , BCl 3 are exhausted, most of these gases dissolve in the water seal 8c of the water ring vacuum pump 8 and are discharged. Also, since the first and second mechanical boosters do not use sealing pump oil, the reaction gas is successfully exhausted without problems such as the aforementioned deterioration of the pump oil. However, although this device has solved the problem of pump oil deterioration, there is another problem because the water ring type vacuum pump 8 is used, that is, the water seal 8c is used for sealing. This problem will be explained with reference to FIG. In FIG. 2, the air sucked into the air supply conduit 7b is ejected from the jet nozzle 7a, flows at supersonic speed through the throat portion 7b in the direction of arrow D, and then flows through the diffuser portion 7d while expanding adiabatically, and flows through the conduit 7b. Arrow E indicates the exhaust gas in
direction and flows toward the water seal pump 8 together with the water vapor of the seal water 8c in the differential user 7d. However, in this case, some of the water vapor flows backward into the diffuser portion 7d and the throat portion 7.
It penetrates onto the inner wall of c, where it chemically reacts with the discharged reaction gas to produce solid matter. This solid matter adheres and accumulates on the inner wall. For example, when exhausting the reaction gas of BCl 3 (boron trichloride), this gas reacts with water vapor and the reaction formula ``2BCl 3 + 3H 2 O
→B 2 O 3 +6HCl”, B 2 O 3 (boron oxide) and HCl (hydrogen chloride) are generated. This HCl
Since it is a gas, it is discharged, but B 2 O 3 adheres to the inner wall as a solid substance. In particular, if solid matter adheres to the inner wall of the throat portion 7c, the cross-sectional shape and cross-sectional area of the fluid passage in the inner wall portion will be reduced and deformed, which will adversely affect the flow of exhaust gas and reduce the exhaust performance of the exhaust system. Therefore, it is necessary to disassemble and clean the throat 7c and diffuser 7d of this exhaust system periodically or as often as necessary in order to remove such adhering solid matter. This disassembly and cleaning always requires manual labor (operators) and is complicated and time-consuming. For example, this disassembly and cleaning work requires about one hour. Therefore, the operating rate of the exhaust system is significantly reduced due to this decomposition and cleaning, and as a result, the operating rate of the chemical reaction apparatus is also reduced.
(4) 発明の目的
本発明は上記従来装置の欠点に鑑み、分解洗浄
の必要がなく簡便かつ短時間で空気エゼクタ内壁
の洗浄が可能な洗浄手段を有する化学反応ガス排
気装置を提供することを目的とするものである。(4) Purpose of the Invention In view of the above-mentioned drawbacks of the conventional devices, the present invention aims to provide a chemical reaction gas exhaust device having a cleaning means that can clean the inner wall of the air ejector easily and in a short time without the need for disassembly and cleaning. This is the purpose.
(5) 発明の構成
そして、上記の目的を達成するために、本発明
に依れば、化学反応ガス排出のために、水封型真
空ポンプに連結された空気エゼクタをガス反応室
の排気口に排気導管及び機械的真空ポンプを介在
して接続せしめた排気装置において、上記空気エ
ゼクタの上流側排気導管上に第１開閉弁を設け、
上記空気エゼクタの空気噴出ノズルに導かれる供
給空気導管途上に上記空気エゼクタ内壁洗浄流体
供給用の分岐導管を分岐配設し、該分岐部上流の
上記空気導管と洗浄流体導管上にそれぞれ第２開
閉弁と第３開閉弁を設けて成る空気エゼクタ内壁
洗浄手段を具備せしめたことを特徴とする化学反
応ガス排気装置が提供される。(5) Structure of the Invention In order to achieve the above object, according to the present invention, an air ejector connected to a water ring vacuum pump is connected to an exhaust port of a gas reaction chamber for discharging chemical reaction gas. In the exhaust system connected to the air ejector via an exhaust conduit and a mechanical vacuum pump, a first on-off valve is provided on the upstream exhaust conduit of the air ejector,
A branch conduit for supplying cleaning fluid to the inner wall of the air ejector is branched in the middle of the supply air conduit led to the air ejection nozzle of the air ejector, and a second opening/closing conduit is provided on the air conduit and the cleaning fluid conduit upstream of the branch part, respectively. There is provided a chemical reaction gas exhaust device characterized in that it is equipped with an air ejector inner wall cleaning means that includes a valve and a third on-off valve.
(6) 発明の実施例
第３図は本発明による化学反応ガス排気装置の
ブロツク図、第４図は第３図の第３排気導管６、
空気エゼクタ７及び水封型真空ポンプ８の部分の
縦断面図である。両図において、７ｅは分岐部、
１１は第１開閉弁、１２は第２開閉弁、１３は第
３開閉弁、１４は分岐導管をそれぞれ示し、他の
符号は前出の第１及び第２図と同一部分をそれぞ
れ示す。図示のように、本装置は第３排気導管６
上に第１開閉弁１１を設け、供給空気導管７ｂ途
上に洗浄水供給用の分岐導管１４を分岐配設し、
さらに分岐部７ｅ上流の上記空気導管７ｂと洗浄
水供給用の分岐導管１４上にそれぞれ第２開閉弁
１２と第３開閉弁１３を設けたもので、他の部分
は前出の第１図と第２図に示す従来例と同様に構
成されている。これらの第１、第２及び第３開閉
弁１１，１２及び１３と、分岐導管１４を設ける
ことにより空気エゼクタ内壁の洗浄装置が形成さ
れる。すなわち、本装置では第１開閉弁１１と第
２開閉弁１２を開放して第３開閉弁１３を閉鎖し
た場合は前述の従来装置と同様に反応ガスの排気
が行われる。次に洗浄方法を説明すると、水封ポ
ンプ８を作動させたままの状態で、上記と逆に第
１開閉弁１１と第２開閉弁１２を閉鎖して第３開
閉弁１３を開放する。この結果、分岐導管１４か
ら洗浄水が吸入され噴出ノズル７ａから噴出し、
この噴出流によつてスロート部分７ｃ及びデイフ
ユーザ部分７ｄの内壁に付着している固形物が簡
単に例えば１〜２分間で取り除かれる。次いで、
第３開閉弁１３を閉鎖し第２開閉弁１２を開放す
ると、今度は噴出ノズル７ａから空気が噴出して
スロート部分７ｃ及びデイフユーザ部分７ｄの内
壁がきわめて短時間で乾燥されて洗浄作業が完了
する。このように本排気装置では、これら開閉弁
の開閉操作のみで簡便に洗浄が行なわれるので分
解洗浄の必要がなくまたそのための人手も不要で
ある。これら開閉弁の操作は手動で行なつてもよ
く、また別に制御装置を設けて自動化にすること
も可能である。また、上記実施例ではメカニカル
ブースタが２個使用された場合を例示したが、本
発明はこれらの個数又は機種に関係なく適用でき
る。(6) Embodiments of the invention FIG. 3 is a block diagram of a chemical reaction gas exhaust system according to the present invention, and FIG. 4 shows the third exhaust pipe 6 of FIG.
FIG. 3 is a longitudinal cross-sectional view of the air ejector 7 and the water ring vacuum pump 8. FIG. In both figures, 7e is a branch,
11 is a first on-off valve, 12 is a second on-off valve, 13 is a third on-off valve, and 14 is a branch conduit, and other symbols indicate the same parts as in FIGS. 1 and 2, respectively. As shown, the device includes a third exhaust conduit 6
A first on-off valve 11 is provided at the top, a branch conduit 14 for supplying cleaning water is disposed in the middle of the supply air conduit 7b,
Further, a second on-off valve 12 and a third on-off valve 13 are provided on the air conduit 7b upstream of the branch part 7e and the branch conduit 14 for supplying washing water, respectively, and the other parts are similar to those shown in FIG. The structure is similar to the conventional example shown in FIG. By providing these first, second, and third on-off valves 11, 12, and 13 and the branch conduit 14, a cleaning device for the inner wall of the air ejector is formed. That is, in this apparatus, when the first on-off valve 11 and the second on-off valve 12 are opened and the third on-off valve 13 is closed, the reaction gas is exhausted in the same manner as in the conventional apparatus described above. Next, the cleaning method will be described. While the water seal pump 8 is kept operating, the first on-off valve 11 and the second on-off valve 12 are closed and the third on-off valve 13 is opened, contrary to the above. As a result, cleaning water is sucked in from the branch pipe 14 and ejected from the ejection nozzle 7a.
The solid matter adhering to the inner walls of the throat portion 7c and the diffuser portion 7d is easily removed by this jet flow in, for example, 1 to 2 minutes. Then,
When the third on-off valve 13 is closed and the second on-off valve 12 is opened, air is ejected from the ejection nozzle 7a, and the inner walls of the throat portion 7c and the diffuser portion 7d are dried in a very short time, completing the cleaning operation. . In this way, in this exhaust system, cleaning can be easily performed by simply opening and closing these on-off valves, so there is no need for disassembly and cleaning, and no human effort is required for this purpose. These on-off valves may be operated manually, or may be automated by providing a separate control device. Further, although the above embodiment illustrates a case in which two mechanical boosters are used, the present invention can be applied regardless of the number or types of mechanical boosters.
(7) 発明の効果
以上、詳細に説明したように、本発明の化学反
応ガス排気装置は、きわめて簡便にしかもそのた
めの人手を必要とせず空気エゼクタ内壁の洗浄を
行ない得るものであつて、省力化、装置の稼働率
の向上等効果大なるものがある。(7) Effects of the Invention As explained above in detail, the chemical reaction gas exhaust device of the present invention can clean the inner wall of the air ejector very easily and without requiring any human labor, and is labor-saving. There are significant effects such as improvement in optimization and equipment availability.
第１図は従来の化学反応ガス排気装置のブロツ
ク図、第２図は第１図の空気エゼクタ７と水封型
真空ポンプ８の部分の縦断面図、第３図は本発明
による化学反応ガス排気装置のブロツク図、第４
図は第３図の第３排気導管６と空気エゼクタ７と
水封型真空ポンプ８の部分の縦断面図である。
１……化学反応室、１ａ……反応室１の排気
口、２……第１排気導管、３……第１メカニカル
ブースタ（真空ポンプ）、４……第２排気導管、
５……第２メカニカルブースタ（真空ポンプ）、
６……第３排気導管、７……空気エゼクタ、７ａ
……噴出ノズル、７ｂ……空気供給導管、７ｃ…
…スロート部分、７ｄ……デイフユーザ部分、７
ｅ……分岐部、８……水封型真空ポンプ、１１…
…第１開閉弁、１２……第２開閉弁、１３……第
３開閉弁、１４……洗浄水供給用分岐導管。
FIG. 1 is a block diagram of a conventional chemical reaction gas evacuation device, FIG. 2 is a longitudinal sectional view of the air ejector 7 and water ring vacuum pump 8 in FIG. 1, and FIG. 3 is a chemical reaction gas exhaust system according to the present invention. Block diagram of exhaust system, No. 4
The figure is a longitudinal cross-sectional view of the third exhaust conduit 6, air ejector 7, and water ring type vacuum pump 8 in FIG. DESCRIPTION OF SYMBOLS 1... Chemical reaction chamber, 1a... Exhaust port of reaction chamber 1, 2... First exhaust pipe, 3... First mechanical booster (vacuum pump), 4... Second exhaust pipe,
5...Second mechanical booster (vacuum pump),
6...Third exhaust pipe, 7...Air ejector, 7a
...Blowout nozzle, 7b...Air supply conduit, 7c...
...Throat part, 7d...Diff user part, 7
e...Branch portion, 8...Water ring vacuum pump, 11...
...First on-off valve, 12... Second on-off valve, 13... Third on-off valve, 14... Branch conduit for supplying wash water.
Claims (1)
プに連結された空気エゼクタをガス反応室の排気
口に排気導管及び機械的真空ポンプを介在して接
続せしめた排気装置において、上記空気エゼクタ
の上流側排気導管上に第１開閉弁を設け、上記空
気エゼクタの空気噴出ノズルに導かれる供給空気
導管途上に上記空気エゼクタ内壁洗浄流体供給用
の分岐導管を分岐配設し、該分岐部上流の上記空
気導管と洗浄流体導管上にそれぞれ第２開閉弁と
第３開閉弁を設けて成る空気エゼクタ内壁洗浄手
段を具備せしめたことを特徴とする化学反応ガス
排気装置。1. In an exhaust system in which an air ejector connected to a water ring vacuum pump is connected to an exhaust port of a gas reaction chamber via an exhaust conduit and a mechanical vacuum pump for discharging chemical reaction gases, the air ejector is A first on-off valve is provided on the upstream exhaust conduit, and a branch conduit for supplying cleaning fluid for the inner wall of the air ejector is provided in the middle of the supply air conduit leading to the air jet nozzle of the air ejector, and A chemical reaction gas exhaust device characterized in that the air ejector inner wall cleaning means is provided with a second on-off valve and a third on-off valve provided on the air conduit and the cleaning fluid conduit, respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20906881A JPS58110873A (en) | 1981-12-25 | 1981-12-25 | Chemical reaction gas exhausting apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20906881A JPS58110873A (en) | 1981-12-25 | 1981-12-25 | Chemical reaction gas exhausting apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58110873A JPS58110873A (en) | 1983-07-01 |
| JPS6211196B2 true JPS6211196B2 (en) | 1987-03-11 |
Family
ID=16566713
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20906881A Granted JPS58110873A (en) | 1981-12-25 | 1981-12-25 | Chemical reaction gas exhausting apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58110873A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS535203U (en) * | 1976-06-26 | 1978-01-18 |
-
1981
- 1981-12-25 JP JP20906881A patent/JPS58110873A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS535203U (en) * | 1976-06-26 | 1978-01-18 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58110873A (en) | 1983-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW200936886A (en) | Multi-port pumping system for substrate processing chambers | |
| JP5996834B2 (en) | Vacuum exhaust device | |
| TWI377291B (en) | Apparatus and method for control, pumping and abatement for vacuum process chambers | |
| JP4113755B2 (en) | Processing equipment | |
| JPH02290223A (en) | Thermal cracking apparatus | |
| JP2010504847A5 (en) | ||
| US6149729A (en) | Film forming apparatus and method | |
| CN100415587C (en) | Purgeable container for low vapor pressure chemicals | |
| JPS6211196B2 (en) | ||
| JP2020059002A (en) | Detoxification device, method for exchanging piping part of detoxification device and method for cleaning pipeline of detoxification device | |
| JPS6126412B2 (en) | ||
| JPS6128837B2 (en) | ||
| JPH0637074A (en) | Cleaning method for semiconductor manufacturing apparatus | |
| JP2004218648A (en) | Vacuum device | |
| JP3350590B2 (en) | Semiconductor manufacturing apparatus and cleaning method thereof | |
| KR20100073338A (en) | Vacuum pump system for semiconductor process chamber | |
| JP2830585B2 (en) | Semiconductor manufacturing equipment | |
| JP2520592Y2 (en) | Decompression exhaust device | |
| KR100669856B1 (en) | Device for connecting two pipes and apparatus for processing a semiconductor substrate using the same | |
| US20230258191A1 (en) | Dry vacuum pump regeneration mechanism and dry vacuum pump regeneration method | |
| KR20040053452A (en) | Apparatus for eliminating particle in vaccum chamber | |
| KR100280467B1 (en) | Apparatus for purging piping of semiconductor wafer deposition system | |
| JPH11219908A (en) | Substrate processor and method therefor | |
| TWI386513B (en) | Method and apparatus for maintaining by-product volatility in deposition process | |
| KR200173020Y1 (en) | Lower pressure chemical vapor deposition (lpcvd) |