JPS6126236B2 - - Google Patents
Info
- Publication number
- JPS6126236B2 JPS6126236B2 JP3579577A JP3579577A JPS6126236B2 JP S6126236 B2 JPS6126236 B2 JP S6126236B2 JP 3579577 A JP3579577 A JP 3579577A JP 3579577 A JP3579577 A JP 3579577A JP S6126236 B2 JPS6126236 B2 JP S6126236B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- electrode
- source
- drain
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000012212 insulator Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 22
- 238000007796 conventional method Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3579577A JPS53120282A (en) | 1977-03-29 | 1977-03-29 | Electrode formation method for schottky barrier gate field effect transisto r |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3579577A JPS53120282A (en) | 1977-03-29 | 1977-03-29 | Electrode formation method for schottky barrier gate field effect transisto r |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53120282A JPS53120282A (en) | 1978-10-20 |
| JPS6126236B2 true JPS6126236B2 (de) | 1986-06-19 |
Family
ID=12451847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3579577A Granted JPS53120282A (en) | 1977-03-29 | 1977-03-29 | Electrode formation method for schottky barrier gate field effect transisto r |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53120282A (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0388178U (de) * | 1989-12-26 | 1991-09-09 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0797592B2 (ja) * | 1985-07-02 | 1995-10-18 | ソニー株式会社 | 電界効果型トランジスタ |
-
1977
- 1977-03-29 JP JP3579577A patent/JPS53120282A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0388178U (de) * | 1989-12-26 | 1991-09-09 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53120282A (en) | 1978-10-20 |
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