JPS6126159B2 - - Google Patents

Info

Publication number
JPS6126159B2
JPS6126159B2 JP56088995A JP8899581A JPS6126159B2 JP S6126159 B2 JPS6126159 B2 JP S6126159B2 JP 56088995 A JP56088995 A JP 56088995A JP 8899581 A JP8899581 A JP 8899581A JP S6126159 B2 JPS6126159 B2 JP S6126159B2
Authority
JP
Japan
Prior art keywords
diode
voltage
programmable
current
writing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56088995A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57203293A (en
Inventor
Sadaji Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP8899581A priority Critical patent/JPS57203293A/ja
Publication of JPS57203293A publication Critical patent/JPS57203293A/ja
Publication of JPS6126159B2 publication Critical patent/JPS6126159B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP8899581A 1981-06-10 1981-06-10 Semiconductor integrated circuit Granted JPS57203293A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8899581A JPS57203293A (en) 1981-06-10 1981-06-10 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8899581A JPS57203293A (en) 1981-06-10 1981-06-10 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS57203293A JPS57203293A (en) 1982-12-13
JPS6126159B2 true JPS6126159B2 (enrdf_load_stackoverflow) 1986-06-19

Family

ID=13958388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8899581A Granted JPS57203293A (en) 1981-06-10 1981-06-10 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS57203293A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5673218A (en) * 1996-03-05 1997-09-30 Shepard; Daniel R. Dual-addressed rectifier storage device
US7813157B2 (en) 2007-10-29 2010-10-12 Contour Semiconductor, Inc. Non-linear conductor memory

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010396B2 (ja) * 1977-07-06 1985-03-16 日本電気株式会社 半導体記憶装置

Also Published As

Publication number Publication date
JPS57203293A (en) 1982-12-13

Similar Documents

Publication Publication Date Title
US4876220A (en) Method of making programmable low impedance interconnect diode element
US4881114A (en) Selectively formable vertical diode circuit element
US4455495A (en) Programmable semiconductor integrated circuitry including a programming semiconductor element
US4287569A (en) Semiconductor memory device
US4070654A (en) Bipolar read-only memory
US4480319A (en) Emitter coupled flip flop memory with complementary bipolar loads
US4021786A (en) Memory cell circuit and semiconductor structure therefore
US6317362B1 (en) Semiconductor memory device
JPS5814748B2 (ja) ランダムアクセスメモリ用半導体装置
US4488350A (en) Method of making an integrated circuit bipolar memory cell
US4045784A (en) Programmable read only memory integrated circuit device
US4805141A (en) Bipolar PROM having transistors with reduced base widths
US4237472A (en) High performance electrically alterable read only memory (EAROM)
JPS6126159B2 (enrdf_load_stackoverflow)
US4622575A (en) Integrated circuit bipolar memory cell
US4170017A (en) Highly integrated semiconductor structure providing a diode-resistor circuit configuration
US5793670A (en) Static semiconductor memory device including a bipolar transistor in a memory cell, semiconductor device including bipolar transistors and method of manufacturing bipolar transistors
JPS58130557A (ja) Cmos装置
US4257059A (en) Inverse transistor coupled memory cell
US4799089A (en) Semiconductor memory device
JP2885933B2 (ja) 半導体不揮発性メモリとその書き込み方法
JPH0644608B2 (ja) 半導体集積回路装置
JPS6024591B2 (ja) 静電誘導トランジスタ読み出し専用記憶装置
JP5109235B2 (ja) 半導体装置
JPS6237538B2 (enrdf_load_stackoverflow)