JPS61258426A - Reduction projection exposure device - Google Patents

Reduction projection exposure device

Info

Publication number
JPS61258426A
JPS61258426A JP60100814A JP10081485A JPS61258426A JP S61258426 A JPS61258426 A JP S61258426A JP 60100814 A JP60100814 A JP 60100814A JP 10081485 A JP10081485 A JP 10081485A JP S61258426 A JPS61258426 A JP S61258426A
Authority
JP
Japan
Prior art keywords
reticle
projection exposure
illumination optical
foreign
foreign matter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60100814A
Other languages
Japanese (ja)
Inventor
Yutaka Tomita
豊 冨田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60100814A priority Critical patent/JPS61258426A/en
Publication of JPS61258426A publication Critical patent/JPS61258426A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Abstract

PURPOSE:To enable to perform the foreign matter detection on the surface of a reticle in parallel with the contracted projection exposure by means of providing the titled device with multiple sets of lighting optical systems and foreign matter detective means. CONSTITUTION:Firstly a reticle 3b whereon a pattern is formed is set on a scan-holding board 4b to detect any foreign matters on the surface of reticle 3b by means of a foreign matter detective means 11b. In order words, the surface of reticle 3b is irradiated with laser beams 8a from a laser emitting part 8 through a scan-reflecting mirror 9 to be scanned e.g. in X axial direction while the scan-holding board 4b is constituted to be movable stepwise in Y axial direction so that the laser beams 8a may successively scan the overall surface of reticle 3b. At this time, any laser beams 8a scattered on the surface of reticle 3b are detected by a scattered beams detector 10 to automatically check the existence of any foreign matters on the surface of reticle 3b. Through these procedures, the foreign-matter detection and the projection exposure on the surface of reticle 3b can be performed in parallel with each other since the titled device using X and Y stage 7 in common is provided with two sets of foreign matter detective means 11a, 11b and lighting optical systems 1a, 1b.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の製造に用いられる縮小投影装置に
関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a reduction projection apparatus used for manufacturing semiconductor devices.

〔従来の技術〕[Conventional technology]

従来、半導体装置の製造工程においては、レチクルのパ
ターンを半導体フェノ・(以下単にウニI・という)に
縮小投影し、順次ステップ露光を行なう方法が用いられ
ている。この場合、レチクルの表面にごみや粒子等の異
物が存在すると、これら異物のパターンがウェハの全チ
ップに繰り返して転写されるため、ウェハ全体が不良と
なり半導体装置の生産性を低下させる大きな要因となり
ていた。
Conventionally, in the manufacturing process of semiconductor devices, a method has been used in which a pattern of a reticle is reduced and projected onto a semiconductor phenol (hereinafter simply referred to as urchin I), and sequential step exposure is performed. In this case, if foreign matter such as dust or particles is present on the surface of the reticle, the pattern of these foreign matter will be repeatedly transferred to all chips on the wafer, resulting in the entire wafer becoming defective and becoming a major factor in reducing the productivity of semiconductor devices. was.

特に半導体装置の高集積化、高密度化の要求に伴ない、
極微細な異物が1個レチクル表面に付着していてもウェ
ハが不良となる場合がある。
In particular, with the demand for higher integration and higher density of semiconductor devices,
Even if a single extremely fine foreign substance adheres to the reticle surface, the wafer may be defective.

その丸め、従来から縮小投影露光を行う前にレチクル表
面の入念な検査が行なわれており、異物検査機構を備え
た縮小投影露光装置も開発され、実用化されている。
Conventionally, the surface of the reticle has been carefully inspected before performing reduction projection exposure, and reduction projection exposure apparatuses equipped with a foreign object inspection mechanism have also been developed and put into practical use.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら、この種の縮小投影露光装置においては、
異物検査終了後のレチクルを用いて縮小投影露光がなさ
れるため、多品種小量生産品でレチクルの交換頻度が多
い場合は、レチクル表面の異物検査に多くの時間を要し
、縮小投影露光装置の稼動率を低下させるという欠点が
ありた。
However, in this type of reduction projection exposure apparatus,
Reduction projection exposure is performed using the reticle after the foreign object inspection is completed, so if the reticle is frequently replaced in a high-mix, low-volume production product, it takes a lot of time to inspect the reticle surface for foreign objects, and the reduction projection exposure device This had the disadvantage of lowering the operating rate.

本発明の目的は、上記欠点を除去し、多品種小量生産時
においても稼動率の低下することのない縮小投影露光装
置を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a reduction projection exposure apparatus which eliminates the above-mentioned drawbacks and which does not reduce the operating rate even during high-mix, low-volume production.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の縮小投影露光装置は、レチクルを保持し一定方
向に移動可能な複数個の走査保持板と、レクチル表面の
異物を検出する複数の異物検出手段と、レチクルのパタ
ーンを投影するための複数の照明光学系と、所望する一
つの照明光学系を選択しレチクルのパターンを縮小レン
ズに導く照明光学系選択手段と、縮小レンズからのレチ
クルのパターンが転写される半導体ウェハを載置する一
個のXYステージとを含んで構成される。
The reduction projection exposure apparatus of the present invention includes a plurality of scanning holding plates that hold a reticle and are movable in a fixed direction, a plurality of foreign object detection means for detecting foreign objects on the surface of the reticle, and a plurality of foreign object detection means for projecting a pattern on the reticle. an illumination optical system, an illumination optical system selection means for selecting one desired illumination optical system and guiding the reticle pattern to the reduction lens, and a semiconductor wafer on which the reticle pattern from the reduction lens is transferred. It is configured to include an XY stage.

本発明によれば、縮小投影露光が行なわれている間に1
枚以上のレチクルの表面が検査されるため、レチクル表
面の検査待ち時間が不要となる。
According to the present invention, while reduction projection exposure is being carried out, 1
Since the surfaces of more than one reticle are inspected, there is no need to wait for inspection of the reticle surfaces.

従って、縮小投影露光装置の稼動率′は大幅に向上する
Therefore, the operating efficiency of the reduction projection exposure apparatus is greatly improved.

〔実施例〕〔Example〕

次に本発明の実施例を図面を用いて説明する。 Next, embodiments of the present invention will be described using the drawings.

第1図は本発明の一実施例を説明するための光学系の斜
視図である。
FIG. 1 is a perspective view of an optical system for explaining one embodiment of the present invention.

第1図において、縮小投影露光装置は、水銀ランプ等か
らなりレチクル上のパターンを投影するための照明光学
系1a、lbと、コンデンサレンズ2a、2bと、パタ
ーンが形成されたレチクル3a。
In FIG. 1, the reduction projection exposure apparatus includes illumination optical systems 1a and lb for projecting a pattern on a reticle, including a mercury lamp, condenser lenses 2a and 2b, and a reticle 3a on which a pattern is formed.

3bをそれぞれ保持し一定方向に移動可能な走査保持板
4a、4bと、縮小レンズ5と、半導体ウェハ6を載置
するXYステージ7と、レーザ発光部8、走査反射鏡9
、散乱光検出部10からなる異物検出手段11JL、l
lbと、可動遮光板12&、12bと可動反射板13か
らなる照明光学系選択手段14とから主に構成さnてい
る、。
3b, respectively, and are movable in a fixed direction, a reduction lens 5, an XY stage 7 on which a semiconductor wafer 6 is placed, a laser emitting unit 8, and a scanning reflector 9.
, foreign matter detection means 11JL, l consisting of scattered light detection section 10
lb, an illumination optical system selection means 14 consisting of movable light shielding plates 12&, 12b, and a movable reflection plate 13.

まず表面にパターンが形成されたレチクル3bを走査保
持板4bにセットし、異物検出手段11bを用いてレチ
クル3b表面の異物を検査する。すなiち、レーザ発光
部8からの゛レーザ光8aを走査反射鏡9によりレチク
ル3b表面に照射し、例えばX軸方向に走査する。一方
、走査保持板4bはY軸方向に段階的に移動できるよう
に構成されているため、レーザ光8aはレチ〜クル3b
の全表面を順次走査する。そして、レチクル表面で散乱
したレーザ光は散乱光検出部10により検出され、レチ
クル3b表面の異物の有無は自動的に判定される。
First, the reticle 3b with a pattern formed on its surface is set on the scanning holding plate 4b, and the foreign object detection means 11b is used to inspect the surface of the reticle 3b for foreign objects. That is, the laser beam 8a from the laser emitting unit 8 is irradiated onto the surface of the reticle 3b by the scanning reflector 9, and is scanned, for example, in the X-axis direction. On the other hand, since the scanning holding plate 4b is configured to be able to move stepwise in the Y-axis direction, the laser beam 8a is transmitted from the reticle to the reticle 3b.
The entire surface of the image is sequentially scanned. Then, the laser light scattered on the reticle surface is detected by the scattered light detection section 10, and the presence or absence of foreign matter on the surface of the reticle 3b is automatically determined.

このようにして、例えば異物がないと判定されたレチク
ル3aには、照明光学系1aからの光によりそのパター
ンが投影さnる。この時、同時に、照明光学系選択φ段
14は、この投影光16を縮小レンズ5に導くように作
動する。すなわち、可動遮光板12JILが上方向にそ
して可動反射板13が右方向に移動し、反射板15aに
より反射されたパターンの投影光16を縮小レンズ5に
導き、XYステージ7上のウェハ6に投影する。このよ
うにして、縮小パターンはクエへ6上に露光される。
In this way, for example, a pattern is projected onto the reticle 3a determined to be free of foreign matter using light from the illumination optical system 1a. At this time, the illumination optical system selection φ stage 14 simultaneously operates to guide this projection light 16 to the reduction lens 5. That is, the movable light shielding plate 12JIL moves upward and the movable reflection plate 13 moves to the right, guiding the projection light 16 of the pattern reflected by the reflection plate 15a to the reduction lens 5, and projecting it onto the wafer 6 on the XY stage 7. do. In this way, the reduced pattern is exposed onto the square 6.

このように本実施例においては、調整の難しい縮小投影
レン女系や超精密な移動制御を必要とするXYステージ
を共用し、2つの異物検出手段や照明光学系等を備えて
いるために、レチクル表面上の異物検査と投影露−光操
作とを並行して行うことができる。その結果、従来のよ
うにレチクル表面の異物検査による待ち時間は短縮され
、縮小投影露光装置の稼動率は大幅に改善されたものと
なる。
In this way, in this embodiment, the reduction projection lens system, which is difficult to adjust, and the XY stage, which requires ultra-precise movement control, are shared, and since it is equipped with two foreign object detection means, an illumination optical system, etc., the reticle Inspection of foreign substances on the surface and projection exposure operation can be performed in parallel. As a result, the waiting time required to inspect the reticle surface for foreign matter as in the past is shortened, and the operating rate of the reduction projection exposure apparatus is greatly improved.

なお上記実施例においては、照明光学系、異物検出手段
、走査保持板等をそれぞれ2つ(一対)備えた場合につ
いて説明したが、レチクル表面の異物検査の待ち時間を
無くすために、必要に応じて、これらを3つ以上設けて
もよいことは勿論である。
In the above embodiment, the case is explained in which two illumination optical systems, foreign object detection means, scanning holding plates, etc. are provided (one pair), but in order to eliminate the waiting time for foreign object inspection on the reticle surface, Of course, three or more of these may be provided.

また上記実施例においては、2つの照明光学系を用いた
が、投影縮小露光に必要な光源は1個あればよいため、
反射鏡等を用いて1個の光源を交互に選択してレチクル
パターンの投影を行うことも可能である。この場合、装
置をより小型化することができる。
In addition, in the above embodiment, two illumination optical systems were used, but since only one light source is required for projection reduction exposure,
It is also possible to project the reticle pattern by alternately selecting one light source using a reflecting mirror or the like. In this case, the device can be made more compact.

〔発明の効果〕〔Effect of the invention〕

以上詳細に説明したように、本発明によれば、照明光学
系や異物検査手段が複数個備えらnているために、縮小
投影露光操作と並行してレチクル表面の異物検査を行う
ことができる。このため、レチクル交換頻度が多い場合
であっても稼動率が低下することがないため、半導体装
置の製造能率向上に大きな効果がある。
As described in detail above, according to the present invention, since a plurality of illumination optical systems and foreign object inspection means are provided, foreign object inspection on the reticle surface can be performed in parallel with the reduction projection exposure operation. . Therefore, even if the reticle is replaced frequently, the operating rate does not decrease, which has a great effect on improving the manufacturing efficiency of semiconductor devices.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例の斜視図である。 IJLllb・・・・・・照明光学系、2a、2b・・
・・・・コンデンサレンズ、3a、3b・・・・・・レ
チクル、4a、4b・・・・・・走査保持板、5・・・
・・・縮小レンズ、6・・・・・・クエハ、7・・・・
・・XYステージ、8・・・・・・レーザ発光部、9・
・・・・・走査反射鏡、10・・・・・・散乱光検出部
、lla、llb・・・・・・異物検出手段、12a、
12b・・・・・・可動遮光板、13・・・・・・可動
反射板、14・・・・・・照明光学系選択手段、15a
、15b・・・・・・反射板、16・・・・・・投影光
FIG. 1 is a perspective view of an embodiment of the present invention. IJLllb...Illumination optical system, 2a, 2b...
...Condenser lens, 3a, 3b...Reticle, 4a, 4b...Scanning holding plate, 5...
...Reducing lens, 6...Queha, 7...
...XY stage, 8... Laser emitting section, 9.
...Scanning reflector, 10...Scattered light detection unit, lla, llb...Foreign object detection means, 12a,
12b...Movable light shielding plate, 13...Movable reflection plate, 14...Illumination optical system selection means, 15a
, 15b... Reflection plate, 16... Projection light.

Claims (2)

【特許請求の範囲】[Claims] (1)レチクルを保持し一定方向に移動可能な複数個の
走査保持板と、レチクル表面の異物を検出する複数の異
物検出手段と、前記レチクルのパターンを投影するため
の複数の照明光学系と、所望する一つの照明光学系を選
択しレチクルのパターンを縮小レンズに導く照明光学系
選択手段と、前記縮小レンズからのレチクルのパターン
が転写される半導体ウェハを載置する一個のXYステー
ジとを含むことを特徴とする縮小投影露光装置。
(1) A plurality of scanning holding plates that hold a reticle and are movable in a fixed direction, a plurality of foreign object detection means that detect foreign objects on the surface of the reticle, and a plurality of illumination optical systems that project the pattern of the reticle. , an illumination optical system selection means for selecting one desired illumination optical system and guiding the reticle pattern to the reduction lens, and an XY stage on which the semiconductor wafer to which the reticle pattern from the reduction lens is transferred is placed. A reduction projection exposure apparatus comprising:
(2)複数の照明光学系は単一の光源からの光を交互に
選択して用いる照明光学系である特許請求の範囲第(1
)項記載の縮小投影露光装置。
(2) The plurality of illumination optical systems are illumination optical systems that alternately select and use light from a single light source.
) The reduction projection exposure apparatus described in item 2.
JP60100814A 1985-05-13 1985-05-13 Reduction projection exposure device Pending JPS61258426A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60100814A JPS61258426A (en) 1985-05-13 1985-05-13 Reduction projection exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60100814A JPS61258426A (en) 1985-05-13 1985-05-13 Reduction projection exposure device

Publications (1)

Publication Number Publication Date
JPS61258426A true JPS61258426A (en) 1986-11-15

Family

ID=14283818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60100814A Pending JPS61258426A (en) 1985-05-13 1985-05-13 Reduction projection exposure device

Country Status (1)

Country Link
JP (1) JPS61258426A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63311515A (en) * 1987-06-15 1988-12-20 Canon Inc Orthogonal/parallel adjusting device
JP2010249833A (en) * 1998-04-30 2010-11-04 Kla-Tencor Corp System and method for inspecting semiconductor wafers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63311515A (en) * 1987-06-15 1988-12-20 Canon Inc Orthogonal/parallel adjusting device
JP2010249833A (en) * 1998-04-30 2010-11-04 Kla-Tencor Corp System and method for inspecting semiconductor wafers

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