JPS61254929A - Matrix type liquid crystal display device - Google Patents
Matrix type liquid crystal display deviceInfo
- Publication number
- JPS61254929A JPS61254929A JP60098525A JP9852585A JPS61254929A JP S61254929 A JPS61254929 A JP S61254929A JP 60098525 A JP60098525 A JP 60098525A JP 9852585 A JP9852585 A JP 9852585A JP S61254929 A JPS61254929 A JP S61254929A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- liquid crystal
- display device
- crystal display
- type liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1306—Details
- G02F1/1309—Repairing; Testing
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136263—Line defects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136268—Switch defects
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発ＦｉＡは半導体層に対してゲート電極を形成しな
い側に遮Ｊｌｔ、！を設ける透過型のマトリクス型液晶
表示装置に関するものである。[Detailed Description of the Invention] [Industrial Application Field] This emitted FiA is shielded from the semiconductor layer on the side where the gate electrode is not formed. The present invention relates to a transmissive matrix type liquid crystal display device.
第３図はマトリクス型液晶表示装＃に用いる従来の薄膜
トランジスタ（以下、ＴＰＴと略称する）アレイ基板（
ＴＦＴアレイ完成状態）の平面図である。図において、
ｌは絶縁基板、８はＴＦＴアレイ部、９はリード電極を
含む複数のゲート線、１０はＩＪ −Ｐ電極を含む複数
のソース（またはドレイン）線であり、これらのゲート
＃９およびソース線１０は格子状に配線され、かつこれ
らの交点毎にＴＦＴｋ有する単位素子がそれぞれ接続さ
れている。なお、リード電極をＴＦＴアレイ部８に２対
（図面において左右と上下ン設けているのは歩留シ向上
のためである。Figure 3 shows a conventional thin film transistor (hereinafter abbreviated as TPT) array substrate (hereinafter abbreviated as TPT) used in a matrix type liquid crystal display device.
FIG. 3 is a plan view of the TFT array (completed state). In the figure,
1 is an insulating substrate, 8 is a TFT array section, 9 is a plurality of gate lines including lead electrodes, 10 is a plurality of source (or drain) lines including IJ-P electrodes, and these gate #9 and source line 10 are wired in a grid pattern, and unit elements each having a TFTk are connected at each intersection. The reason why two pairs of lead electrodes are provided in the TFT array section 8 (left and right and upper and lower in the drawing) is to improve yield.
また上記ＴＦＴアレイ部８の各々のＴＰＴは第１図に示
す構造−となっている。この第１図は本発明におけるＴ
ＰＴの断面図であるが、ＴＰＴ部の断面は従来も同様と
なるため第１図を援用して従来のＴＰＴ１ｊｔ説明する
。図において、ｌは絶縁基板、２はこの絶縁基板ｌ上に
形成された遮光膜、３は遮光１［２を覆って絶縁基板ｌ
上に形・成された層間絶縁を兼ねる。Ｒッシペーション
・膜である。また４はパッシベーション膜３上すなわち
絶縁基板１の主面上に形成されたアモルファスシリコン
膜、５はソース、ドレイン電極、６はゲート絶縁膜で、
このゲート絶縁膜６上にゲート電極７が形成されている
。Further, each TPT of the TFT array section 8 has the structure shown in FIG. This figure 1 shows the T in the present invention.
Although this is a sectional view of the PT, since the cross section of the TPT portion is the same as in the conventional case, the conventional TPT 1jt will be explained with reference to FIG. In the figure, l is an insulating substrate, 2 is a light-shielding film formed on this insulating substrate l, and 3 is a light-shielding film [2 is covered with an insulating substrate l].
It also serves as interlayer insulation formed on top. R ossipation/membrane. Further, 4 is an amorphous silicon film formed on the passivation film 3, that is, the main surface of the insulating substrate 1, 5 is a source and drain electrode, and 6 is a gate insulating film.
A gate electrode 7 is formed on this gate insulating film 6.
そして、マ） ＩＪクス型液晶表示装置は、上記ＴＰＴ
に画素電極をソース（あるいはドレイン）電極と接続す
るよう形成し、液晶の配向膜を付加した絶縁基板１と透
明導電膜を有する対向電極基板（図示せず）とで液晶全
挾持させて形成する。And, M) IJ type liquid crystal display device uses the above-mentioned TPT.
A pixel electrode is formed to be connected to a source (or drain) electrode, and the liquid crystal is entirely sandwiched between an insulating substrate 1 to which a liquid crystal alignment film is added and a counter electrode substrate (not shown) having a transparent conductive film. .
また、外部の駆動回路とは絶縁基板ｌ上のゲート線９お
よびソース（あるいはドレイン）線１０のリード電極に
よって接続する。Further, it is connected to an external drive circuit through lead electrodes of a gate line 9 and a source (or drain) line 10 on the insulating substrate l.
このように透過型のマ） ＩＪクス型液晶表示装置にお
いては、半導体層への光の入射を避けるため遮光膜２を
設ける必要がある。しかし、従来遮光膜は遮光の機能を
有すれば十分であったため、各単位素子毎に電気的に分
離され、外部の回路への接続手段も設けられていなかっ
た。In such a transmissive matrix type liquid crystal display device, it is necessary to provide a light shielding film 2 to prevent light from entering the semiconductor layer. However, in the past, it was sufficient for the light-shielding film to have a light-shielding function, so each unit element was electrically isolated and no connection means to an external circuit was provided.
従来の透過型のマ） ＩＪクス型液晶表示装置は以上の
ように構成されているが、トランジスタのゲート絶縁膜
破壊等の原因によりディスプレイ上、縦および横に線欠
陥を生じる問題があジ、敵方伽のＴＦＴｔ有するＴＦＴ
アレイではこのような欠陥が生じる可能性が高い上、こ
の対策に有効な手段がなかった。Conventional transmissive type IJ type liquid crystal display devices are constructed as described above, but there are problems such as line defects occurring vertically and horizontally on the display due to causes such as breakdown of the gate insulating film of the transistor. TFT with enemy TFTt
There is a high possibility that such defects will occur in arrays, and there has been no effective countermeasure against this problem.
この発明は上記の問題に鑑みなされたもので、ゲートと
ソース、ドレインとの短絡等によって生じるディスプレ
イ上の欠陥を救済することのできるマトリクス型液晶表
示装置を得ることを目的とする。The present invention has been made in view of the above problems, and an object of the present invention is to provide a matrix type liquid crystal display device that can repair defects on a display caused by short circuits between the gate, source, and drain.
この発明に係るマ） ＩＪクス型液晶表示装置は、単位
素子の裏面側に形成された遮光膜をリード電極を用いて
外部回路と接続したものである。The IJ type liquid crystal display device according to the present invention has a light shielding film formed on the back side of a unit element connected to an external circuit using a lead electrode.
この発明のマトリクス型液晶表示装置においては、ゲー
ト絶縁膜破壊等の原因でゲートとソース（あるいはドレ
イン）が電気的に短絡状態になつたす、ゲート線が何ら
かの原因で断線する等の不良が発生した場合、遮光膜を
ゲート（ゲートＭ）に代用させて正常な表示機能を得る
。In the matrix type liquid crystal display device of the present invention, defects such as an electrical short circuit between the gate and the source (or drain) due to breakdown of the gate insulating film, or disconnection of the gate line for some reason occur. In this case, the light shielding film is used as a gate (gate M) to obtain a normal display function.
以下、この発明の一実施例を説明する。第１図はこの発
明の一実施例によるマ） ＩＪクス型表示装置のＴＦＴ
アレイ部の構成を示すものであるが各部の構成は〔従来
の技術〕の項で説明したためここでは省略する。また、
第２図は実施例におけるＴＦＴアレイ基板を示している
。すなわちこの実施例はゲート電極７等が形成された主
面の裏面側・に設けられた遮光膜２ｔ−ゲート線９と同
様に電気的接続を持たせ、しかも外部回路への１７
ｙ％アウトを付加し、ゲート電極７およびゲート線９と
同一機能を有するよう構成したものである。なお、この
ため上、下どちらのゲート電極を使用してもＴＰＴ動作
が変化しないようノぞツシベーション膜３とゲート絶縁
膜６との整合性を図る必要がある。An embodiment of this invention will be described below. FIG. 1 shows a TFT of an IJ type display device according to an embodiment of the present invention.
This shows the configuration of the array section, but since the configuration of each section was explained in the [Prior Art] section, it will be omitted here. Also,
FIG. 2 shows a TFT array substrate in the example. That is, in this embodiment, the light shielding film 2t provided on the back side of the main surface on which the gate electrode 7 etc. are formed has an electrical connection similar to the gate line 9, and the 17 to the external circuit is provided.
It is configured to have the same function as the gate electrode 7 and gate line 9 by adding y% out. For this reason, it is necessary to ensure consistency between the trench isolation film 3 and the gate insulating film 6 so that the TPT operation does not change regardless of whether the upper or lower gate electrode is used.
また遮光膜リード線１１とゲート線９とは垂直平面上回
−位ｆｆ１Ｋあり、しかも上、下は電気的に絶縁されて
いる。Further, the light-shielding film lead wire 11 and the gate line 9 are located at a position ff1K above the vertical plane, and are electrically insulated from above and below.
次にかかる構成のマトリクス型液晶表示装置の動作につ
いて説明する。ゲート絶縁膜６の破壊等によりゲート電
極７とソース、ドレイン電極５が電気的に短絡したり、
ゲート線９が何らかの原因で断線したシする等の不良が
発生した場合、その不良個所の遮光膜リード線１１をゲ
ート線９の代用として使用する。なお、ゲート電極７と
ソース。Next, the operation of the matrix type liquid crystal display device having such a configuration will be explained. The gate electrode 7 and the source and drain electrodes 5 may be electrically short-circuited due to breakdown of the gate insulating film 6, etc.
If a defect such as disconnection of the gate line 9 occurs for some reason, the light-shielding film lead wire 11 at the defective location is used as a substitute for the gate line 9. Note that the gate electrode 7 and the source.
ドレイン電極５との間が電気的に短絡された場合、その
個所あるいはできるだけその部位に近い部分を局所的に
溶断する等の方法で隣シのＴＰＴから孤立させることが
必要である。このように遮光膜２をゲートを極７の代用
とすることができるため、欠陥のないディスプレイの実
現が可能となる。If there is an electrical short-circuit between the drain electrode 5 and the drain electrode 5, it is necessary to isolate the short-circuited portion or a portion as close as possible to the adjacent TPT from the adjacent TPT by, for example, locally blowing the short-circuited portion. In this way, since the light shielding film 2 can be used as a gate in place of the pole 7, it is possible to realize a display without defects.
なお、上記実施例においてノソツシペーション膜３とゲ
ート絶縁膜６との整合性を図る方法は種々考えられるが
、困難な問題ではなく、また遮光膜２にゲート電極機能
を付加することも製造プロセスを複雑化するものではな
い。更に、上記実施例での遮光膜リード線１１の形状９
位置等の構成も種々考えられるが、ゲート線９０代用が
容易にできるものであればこの形状１位置等に限定され
るものではない。Note that in the above embodiment, various methods can be considered for achieving consistency between the insulating film 3 and the gate insulating film 6, but it is not a difficult problem, and adding a gate electrode function to the light shielding film 2 is also possible in the manufacturing process. It is not meant to complicate things. Furthermore, the shape 9 of the light shielding film lead wire 11 in the above embodiment
Various configurations such as positions can be considered, but the gate line is not limited to this shape and one position as long as it can be easily substituted for 90 gate lines.
また、上記実施例のＴＰＴ構造は、ソース、ドレイン電
極５に対してゲート電極７が上になるよう構成されてい
るが、これとは逆に、ソース、ドレイン電極５に灼して
ゲート電極７が下になるＴＰＴ構造であっても本発明の
適用が可能であり、上記実施例と同様の効果上奏する。Further, the TPT structure of the above embodiment is configured such that the gate electrode 7 is placed above the source and drain electrodes 5, but in contrast to this, the source and drain electrodes 5 are burnt and the gate electrode 7 is placed above the source and drain electrodes 5. The present invention can be applied even to a TPT structure in which the top is on the bottom, and the same effects as in the above embodiment can be achieved.
なお、その場合遮光膜リード線は第２図中の９に１また
ゲート線は１１の位置に形成されることになる。In this case, the light-shielding film lead wire will be formed at position 1 at 9 in FIG. 2, and the gate line will be formed at position 11.
以上のようにこの発明のマトリクス型液晶表示装置によ
れば、遮光膜にゲート電極の機能を付加するよう構成し
たので、ゲートとソース、ドレインとの短絡またはゲー
ト線の断線等によって生じるディスプレイ上の欠陥を簡
単に救済でき、欠陥のないディスプレイの実現を可能と
する。しかも従来に比べても伺ら製造プロセスを複雑に
しない等の効果がある。As described above, according to the matrix type liquid crystal display device of the present invention, the function of the gate electrode is added to the light-shielding film. To easily repair defects and realize a defect-free display. Moreover, compared to the conventional method, it has the effect of not complicating the manufacturing process.
第１図はこの発明の一実施例によるマトリクス型液晶表
示装置のＴＰＴの断面図、第２図は同マトリクス型液晶
表示装置のＴＦＴアレイ基板の平面図、第３図は従来の
ＴＦＴアレイ基板の平面図である。
ｌ・・・絶縁基板、２・・・遮光膜、５・・・ソース、
ドレ、 イン電極、７・・・ゲート電極、８・・・Ｔ
ＦＴアレイ部、９・・・ゲート線、１０・・・ソース（
ドレイン）線、１１・・・遮光膜リード線。
なお、図中同一符号は同一または相当部分を示す。FIG. 1 is a sectional view of a TPT of a matrix type liquid crystal display device according to an embodiment of the present invention, FIG. 2 is a plan view of a TFT array substrate of the same matrix type liquid crystal display device, and FIG. 3 is a plan view of a conventional TFT array substrate. FIG. l... Insulating substrate, 2... Light shielding film, 5... Source,
drain, in electrode, 7...gate electrode, 8...T
FT array section, 9...gate line, 10...source (
drain) line, 11... light-shielding film lead wire. Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (1)
をマトリクス状に配列し、これら各々の単位素子のゲー
ト線とソースまたはドレイン線とを格子状に配線してリ
ード電極により外部回路に接続すると共に、前記主面の
裏面に遮光膜を形成し、かつ前記絶縁基板と透明導電膜
を有する対向電極基板とで液晶を挾持してなるマトリク
ス型液晶表示装置において、前記遮光膜をリード電極を
用いて外部回路に接続したことを特徴とするマトリクス
型液晶表示装置。Arranging unit elements having thin film transistors in a matrix on the main surface of an insulating substrate, wiring gate lines and source or drain lines of each of these unit elements in a grid pattern and connecting them to an external circuit through lead electrodes, In a matrix type liquid crystal display device in which a light-shielding film is formed on the back surface of the main surface, and a liquid crystal is sandwiched between the insulating substrate and a counter electrode substrate having a transparent conductive film, the light-shielding film is externally formed using a lead electrode. A matrix type liquid crystal display device characterized by being connected to a circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60098525A JPS61254929A (en) | 1985-05-07 | 1985-05-07 | Matrix type liquid crystal display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60098525A JPS61254929A (en) | 1985-05-07 | 1985-05-07 | Matrix type liquid crystal display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61254929A true JPS61254929A (en) | 1986-11-12 |
Family
ID=14222081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60098525A Pending JPS61254929A (en) | 1985-05-07 | 1985-05-07 | Matrix type liquid crystal display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61254929A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0611735A (en) * | 1992-03-30 | 1994-01-21 | Centre Natl Etud Telecommun (Ptt) | Display screen having optical mask and formation of screen |
| US5308779A (en) * | 1991-03-28 | 1994-05-03 | Honeywell Inc. | Method of making high mobility integrated drivers for active matrix displays |
| CN102193258A (en) * | 2010-03-05 | 2011-09-21 | 上海天马微电子有限公司 | Wire defect judging device and wire defect judging methods |
-
1985
- 1985-05-07 JP JP60098525A patent/JPS61254929A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5308779A (en) * | 1991-03-28 | 1994-05-03 | Honeywell Inc. | Method of making high mobility integrated drivers for active matrix displays |
| JPH0611735A (en) * | 1992-03-30 | 1994-01-21 | Centre Natl Etud Telecommun (Ptt) | Display screen having optical mask and formation of screen |
| CN102193258A (en) * | 2010-03-05 | 2011-09-21 | 上海天马微电子有限公司 | Wire defect judging device and wire defect judging methods |
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