JPS61247046A - 固有抵抗試験装置及び方法 - Google Patents
固有抵抗試験装置及び方法Info
- Publication number
- JPS61247046A JPS61247046A JP61037183A JP3718386A JPS61247046A JP S61247046 A JPS61247046 A JP S61247046A JP 61037183 A JP61037183 A JP 61037183A JP 3718386 A JP3718386 A JP 3718386A JP S61247046 A JPS61247046 A JP S61247046A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- probe
- test
- probe tip
- tips
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012360 testing method Methods 0.000 title claims description 95
- 238000000034 method Methods 0.000 title claims description 24
- 239000000523 sample Substances 0.000 claims description 165
- 235000012431 wafers Nutrition 0.000 claims description 145
- 239000004065 semiconductor Substances 0.000 claims description 48
- 238000005259 measurement Methods 0.000 claims description 19
- 238000013507 mapping Methods 0.000 claims description 16
- 230000001154 acute effect Effects 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 description 26
- 239000007943 implant Substances 0.000 description 14
- 238000012545 processing Methods 0.000 description 12
- 238000005468 ion implantation Methods 0.000 description 11
- 239000010410 layer Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000010884 ion-beam technique Methods 0.000 description 6
- 238000002513 implantation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000013519 translation Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000012369 In process control Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000010965 in-process control Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 231100000241 scar Toxicity 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measurement Of Resistance Or Impedance (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Measuring Leads Or Probes (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/704,296 US4703252A (en) | 1985-02-22 | 1985-02-22 | Apparatus and methods for resistivity testing |
| US704296 | 1985-02-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61247046A true JPS61247046A (ja) | 1986-11-04 |
| JPH0357620B2 JPH0357620B2 (enExample) | 1991-09-02 |
Family
ID=24828889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61037183A Granted JPS61247046A (ja) | 1985-02-22 | 1986-02-21 | 固有抵抗試験装置及び方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4703252A (enExample) |
| EP (1) | EP0196158B1 (enExample) |
| JP (1) | JPS61247046A (enExample) |
| DE (1) | DE3675413D1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0514949U (ja) * | 1991-02-15 | 1993-02-26 | 株式会社アイシーテイ | 半導体素子の検査装置 |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4764970A (en) * | 1985-04-15 | 1988-08-16 | Hitachi, Ltd. | Method and apparatus for detecting cracks |
| US4755746A (en) * | 1985-04-24 | 1988-07-05 | Prometrix Corporation | Apparatus and methods for semiconductor wafer testing |
| US4989154A (en) * | 1987-07-13 | 1991-01-29 | Mitsubishi Petrochemical Company Ltd. | Method of measuring resistivity, and apparatus therefor |
| DE3910610A1 (de) * | 1989-04-01 | 1990-10-04 | Asea Brown Boveri | Vorrichtung zur messung des oberflaechenwiderstandes |
| US5495178A (en) * | 1992-11-10 | 1996-02-27 | Cheng; David | Method and apparatus for measuring film thickness |
| US5691648A (en) * | 1992-11-10 | 1997-11-25 | Cheng; David | Method and apparatus for measuring sheet resistance and thickness of thin films and substrates |
| GB2276462B (en) * | 1993-03-23 | 1997-01-22 | Univ Sheffield | Method and apparatus for mapping of semiconductor materials |
| US5642298A (en) * | 1994-02-16 | 1997-06-24 | Ade Corporation | Wafer testing and self-calibration system |
| US6069326A (en) * | 1997-03-10 | 2000-05-30 | Dresser Industries, Inc. | Hand held measurement instrument with touch screen display |
| US6215127B1 (en) * | 1999-03-08 | 2001-04-10 | Advanced Micro Devices, Inc. | Method of using critical dimension mapping to qualify a new integrated circuit fabrication tool set |
| DE10061106B4 (de) * | 2000-12-07 | 2004-11-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zur Überprüfung elektrischer Materialeigenschaften |
| US6552554B1 (en) | 2001-12-06 | 2003-04-22 | The United States Of America As Represented By The Secretary Of The Navy | Testing current perpendicular to plane giant magnetoresistance multilayer devices |
| US6943571B2 (en) * | 2003-03-18 | 2005-09-13 | International Business Machines Corporation | Reduction of positional errors in a four point probe resistance measurement |
| DE102004055181B3 (de) * | 2004-11-16 | 2006-05-11 | X-Fab Semiconductor Foundries Ag | Verfahren und Anordnung zur elektrischen Messung der Dicke von Halbleiterschichten |
| US7218125B2 (en) * | 2005-09-30 | 2007-05-15 | Agere Systems Inc | Apparatus and method for performing a four-point voltage measurement for an integrated circuit |
| EP1775594A1 (en) * | 2005-10-17 | 2007-04-18 | Capres A/S | Eliminating in-line positional errors for four-point resistance measurement |
| EP1780550A1 (en) * | 2005-10-31 | 2007-05-02 | Capres A/S | A probe for testing electrical properties of test samples |
| WO2007121752A1 (en) | 2006-04-24 | 2007-11-01 | Capres A/S | Method for sheet resistance and leakage current density measurements on shallow semiconductor implants |
| DE102007005208A1 (de) * | 2007-01-29 | 2008-07-31 | Suss Microtec Test Systems Gmbh | Verfahren zum Prüfen elektronischer Bauelemente und Prüfvorrichtung zur Durchführung des Verfahrens |
| US8907690B2 (en) * | 2007-09-03 | 2014-12-09 | Capres A/S | Method of determining an electrical property of a test sample |
| US7759955B2 (en) * | 2007-12-21 | 2010-07-20 | Infineon Technologies Ag | Method and device for position detection using connection pads |
| US10598477B2 (en) * | 2016-02-04 | 2020-03-24 | Kla-Tencor Corporation | Dynamic determination of metal film thickness from sheet resistance and TCR value |
| EP3566062B1 (en) | 2017-01-09 | 2020-11-04 | Capres A/S | A position correction method and a system for position correction in relation to four-point resistance measurements |
| CN113495190B (zh) | 2020-04-01 | 2024-10-15 | 株式会社东芝 | 电阻映射装置、电阻测定装置、电阻测定方法、程序以及记录介质 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2987672A (en) * | 1957-11-21 | 1961-06-06 | Pure Oil Co | Impedance test apparatus |
| NL7008274A (enExample) * | 1970-06-06 | 1971-12-08 | ||
| US4035722A (en) * | 1975-03-17 | 1977-07-12 | Anatoly Leonidovich Ryabov | Multiprobe head for checking electrical parameters of semiconductor instruments and microcircuits |
| JPS5416975A (en) * | 1977-07-08 | 1979-02-07 | Shinetsu Handotai Kk | Device for judging semiconductor wafer in conductive type |
| SU896581A1 (ru) * | 1977-08-12 | 1982-01-07 | Ордена Ленина физико-технический институт им.А.Ф.Иоффе | Способ определени статистических параметров удельного сопротивлени полупроводникового материала |
| US4204155A (en) * | 1978-07-28 | 1980-05-20 | Advanced Semiconductor Materials/America | Automatic four-point probe |
| US4383217A (en) * | 1979-01-02 | 1983-05-10 | Shiell Thomas J | Collinear four-point probe head and mount for resistivity measurements |
| US4267506A (en) * | 1979-01-02 | 1981-05-12 | Shiell Thomas J | Collinear four-point probe head and mount for resistivity measurements |
-
1985
- 1985-02-22 US US06/704,296 patent/US4703252A/en not_active Expired - Lifetime
-
1986
- 1986-02-14 EP EP86301044A patent/EP0196158B1/en not_active Expired
- 1986-02-14 DE DE8686301044T patent/DE3675413D1/de not_active Expired - Lifetime
- 1986-02-21 JP JP61037183A patent/JPS61247046A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0514949U (ja) * | 1991-02-15 | 1993-02-26 | 株式会社アイシーテイ | 半導体素子の検査装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0196158B1 (en) | 1990-11-07 |
| DE3675413D1 (de) | 1990-12-13 |
| EP0196158A1 (en) | 1986-10-01 |
| JPH0357620B2 (enExample) | 1991-09-02 |
| US4703252A (en) | 1987-10-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |