JPS61239688A - Semiconductor light-emitting device - Google Patents

Abstract

PURPOSE:To emit monitor beams in the predetermined direction by forming a groove on a heat sink and preventing a rising at the end surface of a semiconductor laser of flux. CONSTITUTION:A groove 13a is shaped to the surface of a heat sink 13 in the vicinity of an end surface extracting monitor beams 19 in a semiconductor laser 12. Consequently, flux escapes into the groove 13a when the heat sink 13 is bonded in the laser 12, and the irregular reflection of monitor beams 19 due to the extrusion of flux can be prevented. Accordingly, monitor beams can be extracted in the predetermined direction, and stable monitoring is enabled.

Description

[Detailed Description of the Invention] [Summary] A heat sink for a semiconductor light emitting device, in which a groove is provided to release excess flux when a chip such as a semiconductor laser is bonded (adhered) to the heat sink using a flux. The present invention relates to a heat sink that prevents scattering of monitor light emitted from a semiconductor laser or the like due to swelling of a flux.

[Industrial application field]

The present invention relates to a semiconductor light emitting device, and more particularly, to a semiconductor light emitting device equipped with a heat sink having a structure that prevents scattering of monitor light emitted from a semiconductor laser adhered to the heat sink.

[Conventional technology]

A conventional semiconductor light emitting device is shown in a front view in FIG. 4 and a side view in FIG. Photodiode for monitor, 1
6 and 17 indicate electrodes. A laser beam 18 emitted from a semiconductor laser is emitted as shown in the figure, and a monitor beam 19 emitted from the opposite side is irradiated onto a photodiode I5 to monitor the laser beam.

[Problem that the invention seeks to solve]

FIG. 6 is a side view showing in detail the relative positional relationship between the semiconductor laser 2 and the photodiode. A semiconductor laser has a thickness of about 100 μm, most of which is the substrate, and the active layer formed on the substrate that emits the laser beam has a thickness of 0.3 μm, and it is located on the heat sink side.
That is, it is located very close to the heat sink 13 below the semiconductor laser as seen in FIG. The photodiodes are arranged in advance as shown in the figure, and the angle θ between the monitor light 19 and the surface of the heat sink is about 12°.

The semiconductor laser 12 is bonded to the heat sink using a flux. At that time, the flux 20 is applied to the semiconductor laser 12.
It may flow out from the bottom and bulge as shown in the figure, which scatters the monitor light 19 and disturbs the rear view image of the monitor light, causing the photodiode 15 to not be able to obtain a constant monitor light (not being irradiated). There is.

The present invention was created in view of these points, and has a simple structure that allows the flux to escape and improves the visual field image of the monitor light;
Interfering with a, = ao “6゛5-t”’ is “semiconductor”
°゛33, An object of the present invention is to provide a body layer optical device.

[Means for solving problems]

FIG. 1 shows a perspective view of a heat sink according to the present invention.

In FIG. 1, 12 is a semiconductor laser, 13 is a heat sink, 13a is a groove provided in the heat sink, and 19 is a monitor light.

In the illustrated semiconductor light emitting device, a groove 13a is provided in the heat sink 13 in order to extract the monitor light 19 of the semiconductor laser 12 in a fixed direction, thereby preventing diffuse reflection of the monitor light due to protrusion of the flux.

[Effect]

The purpose of the present invention is to make the far-field image behind the laser constant and to extract a constant monitor light.For this purpose, a groove is provided on the heat sink to prevent the flux from rising on the end face of the semiconductor laser. , which obtains a constant far-field image.

〔Example〕

1°(4)'□ An embodiment of the present invention is shown in a perspective view and a side view in FIGS. 1 and 2.

As seen in FIGS. 1 and 2, the laser beam 18 is emitted from the front surface of the semiconductor laser (right side in the figure), and the front surface is arranged so as to come out in front of the end surface of the heat sink 13 during bonding of the semiconductor laser. Ru.

Therefore, in bonding, the flux is the semiconductor laser 12.
Even if it protrudes from the front part of the heat sink 1, it is
3, and since the front surface of the semiconductor laser protrudes in front of the end surface of the heat sink as described above, there is no particular problem with the front surface of the semiconductor laser during bonding.

As mentioned above, the photodiode 15 of the semiconductor laser
As for the rear surface facing the semiconductor laser 12, since the rear surface completely rests on the surface of the heat sink 13, the flux will protrude to the rear of the semiconductor laser 12 during bonding. Therefore, in the present invention, as shown in the figure, a groove 13a is provided in the heat sink near the end face after the semiconductor laser 12 (that is, on the left side in the figure), so that when the semiconductor laser 2 is bonded to the heat sink 13, the flux 20 is It escapes into this groove 13a and prevents it from rising in front of the end face of the semiconductor laser.

This state is explained in the third section, which shows the semiconductor laser 2 in more detail.
It can be understood by referring to the figures.

The grooves 13a may be formed at the stage of manufacturing the heat sink. If a groove 13a is dug in a flat heat sink, there will be some unevenness on the surface of the heat sink, but this will not greatly disturb the far-field image of the monitor light 19 and will not interfere with emitting the monitor light 19 in a certain direction. do not have.

[Effects of the invention] 1. As described above, according to the present invention, the flux is
- The end face of the semiconductor laser that emits the monitor light can be prevented from rising, and the monitor light can be directed in a uniform direction.
It can be output in the opposite direction, making stable monitoring possible.

[Brief explanation of drawings]

FIG. 1 is a perspective view of an embodiment of the present invention, FIG. 2 is a side view of an embodiment of the present invention, FIG. 3 is a detailed side view of an embodiment of the present invention, FIG. 4 is a front view of a conventional example, and FIG. The figure is a side view of a conventional example, and FIG. 6 is a side view showing details of a conventional semiconductor laser. 1 to 6, 11 is a semiconductor light emitting device, 12 is a semiconductor laser (light emitting element), 13 is a heat sink, 13a is a groove, 14 is a mount, 15 is a photodiode, 16 and 17 are electrodes, and 18 is a Laser light, 19 is monitor light, +, qep "l i41', 4R-neLllfi 1st
Figure MLeRf4E4#1141111d[fiFigure 2Figure 6

Claims (1)

[Claims] A light emitting device (11) formed by bonding a semiconductor light emitting element (12) onto a heat sink (13) using a flux (20), comprising: a monitor light (19) of the semiconductor light emitting element (12); ) on the surface of the heat sink (13) near the end surface from which the heat sink (13) is taken out.
3a), and the semiconductor light emitting device (12) is bonded to the semiconductor light emitting device (12).
1. A semiconductor light emitting device characterized by having a structure in which a flux (20) protruding from below is released into a groove (13a).