JPH04196189A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPH04196189A JPH04196189A JP2323582A JP32358290A JPH04196189A JP H04196189 A JPH04196189 A JP H04196189A JP 2323582 A JP2323582 A JP 2323582A JP 32358290 A JP32358290 A JP 32358290A JP H04196189 A JPH04196189 A JP H04196189A
- Authority
- JP
- Japan
- Prior art keywords
- silicon substrate
- semiconductor laser
- laser chip
- laser
- photodiode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 37
- 239000000758 substrate Substances 0.000 claims abstract description 65
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 61
- 239000010703 silicon Substances 0.000 claims abstract description 61
- 230000003287 optical effect Effects 0.000 claims abstract description 17
- 238000012545 processing Methods 0.000 claims description 7
- 230000003321 amplification Effects 0.000 claims description 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 21
- 238000010276 construction Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02255—Out-coupling of light using beam deflecting elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
- H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、光情報処理、光計測、光通信等に用いる半導
体レーザ装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a semiconductor laser device used for optical information processing, optical measurement, optical communication, etc.
従来の技術
従来の半導体レーザ装置を第６図に示した断面図を参照
して説明する。2. Description of the Related Art A conventional semiconductor laser device will be described with reference to the sectional view shown in FIG.
この構造は、素子固定台１の一側面の」一方にヒートシ
ンク２を固定し、この上に半導体レーザチップ（以後レ
ーザデツプと記す）３を固定し、レーザチップ３の発光
面とヒートシンク２の側面および素子固定台１の上面を
揃えるとともに、レーザデツプ３の発光面とは反対側に
レーザ出力光検出用フォトダイオードが載置され、素子
固定台１の」−面に信号検出用フォトダイオード５が載
置されたものである。In this structure, a heat sink 2 is fixed on one side of the element fixing table 1, a semiconductor laser chip (hereinafter referred to as a laser depth) 3 is fixed on top of the heat sink 2, and the light emitting surface of the laser chip 3 and the side surface of the heat sink 2 are fixed. While the top surfaces of the element fixing table 1 are aligned, a photodiode for detecting laser output light is placed on the side opposite to the light emitting surface of the laser deep 3, and a photodiode 5 for signal detection is placed on the negative side of the element fixing table 1. It is what was done.
次に、この構造の動作を説明する。レーザチップ２から
図面の上方に出射された出射光６は、対象物に反射され
て反射光７として信号検出用フォトダイオード５に入力
され、信号処理される。−方、レーザチップ３の出射光
面の反対側から出射されるレーザ光は、レーザ出力光検
出用フォトダイオード４に入力され、レーザ光の強弱に
対応した電流信号に変換される。この信号をレーザチッ
プ駆動回路にフィードバックさせてレーザ光の出力を安
定に制御する。Next, the operation of this structure will be explained. Emitted light 6 emitted upward in the drawing from the laser chip 2 is reflected by the object and input as reflected light 7 to the signal detection photodiode 5, where it is subjected to signal processing. On the other hand, the laser light emitted from the side opposite to the light emitting surface of the laser chip 3 is input to the laser output light detection photodiode 4, and is converted into a current signal corresponding to the intensity of the laser light. This signal is fed back to the laser chip drive circuit to stably control the laser light output.
この従来の構成では、信号検出用フォトダイオード５と
レーザ出力光検出用フォトダイオード４は素子固定台１
に対して水平と水平に近い面内に固定させるのに対して
、レーザチップ３は垂直面内に固定しなければならない
ので、組立作業効率が悪く、位置合わせ精度に大きな問
題があった。In this conventional configuration, the signal detection photodiode 5 and the laser output light detection photodiode 4 are mounted on the element fixing base 1.
The laser chip 3 must be fixed in a vertical plane, whereas the laser chip 3 has to be fixed in a vertical plane, resulting in poor assembly work efficiency and a major problem in positioning accuracy.
この問題を解決する構造として、第７図の断面図に示す
ような半導体レーザ装置がある。As a structure that solves this problem, there is a semiconductor laser device as shown in the cross-sectional view of FIG.
この構造は、（１００）面のシリコン基板８に、両側の
斜面が（１１１）面により形成されるＶ状の溝が形成さ
れ、同溝の斜面のうち一方の面をレーザ出射光を反射さ
せる反射ミラー面つとし、これに対向する面側のシリコ
ン基板８の主面を他方の主面に対して低くし、低くした
シリコン基板の主面とＶ状の溝の斜面とが交わる稜線に
レーザチップ３のレーザ光が出射される前方端面面が平
行になるようにレーザチップ３が固定されたものである
。In this structure, a V-shaped groove whose slopes on both sides are formed by (111) planes is formed in a silicon substrate 8 having a (100) plane, and one of the slopes of the groove reflects the laser emitted light. The main surface of the silicon substrate 8 on the side opposite to the reflecting mirror is made lower than the other main surface, and a laser beam is applied to the ridgeline where the lowered main surface of the silicon substrate intersects with the slope of the V-shaped groove. The laser chip 3 is fixed so that the front end face of the chip 3 from which laser light is emitted is parallel.
この構造によれば、レーザデツプ３より、水平方向に出
射された出射光を反射ミラー面９て反射されて、はぼ上
方へ取り出すことができる。これにより、信号検出用フ
ォトダイオード（図示せず）やレーザ出力検出用フォト
ダイオード（図示せず）をシリコン基板８の主面に載置
することができ、位置合わせ精度を上げることができる
。According to this structure, the emitted light emitted from the laser deep 3 in the horizontal direction can be reflected by the reflecting mirror surface 9 and taken out substantially upward. Thereby, a signal detection photodiode (not shown) and a laser output detection photodiode (not shown) can be placed on the main surface of the silicon substrate 8, and alignment accuracy can be improved.
発明が解決しようとする課題
（１００）面のシリコン基板８に、斜面が（１１１）面
により形成されるＶ状の溝を形成した場合、溝の取射ミ
ラー面９とシリコン基板８の表面に対する傾きθが約５
４°となるため、出射光の中心軸はシリコン基板主面の
垂直方向より約１８°傾いてしまうという問題点があっ
た。Problem to be Solved by the Invention When a V-shaped groove whose slope is formed by a (111) plane is formed in a silicon substrate 8 having a (100) plane, The slope θ is about 5
4 degrees, so there was a problem that the central axis of the emitted light was inclined by about 18 degrees with respect to the perpendicular direction of the main surface of the silicon substrate.
また、各種用途のフォトダイオードをシリコン基板」二
に載置しなければならず、組立工程が複雑＝ ５−
になるという問題点があった。In addition, photodiodes for various uses must be mounted on a silicon substrate, making the assembly process complicated.
課題を解決するための手段
本発明の半導体レーザ装置は、＜１１０＞方向を軸とし
て５〜１５°のオフアングルを有する（１００）面のシ
リコン基板上に、（１１１）面により形成されたＶ状の
溝が形成され、前記（１，１１）面のうち前記シリコン
基板表面に対する傾きが４５°に近い面をレーザ光を反
射させる反射ミラー面とし、この面に対向する側のシリ
コン基板の主面を他方の主面に対して低（し、更に、こ
の反射ミラー面に対向する面の上端稜線に対して半導体
レーザチップの前方端面が平行になるように前記半導体
レーザチップが前記シリコン基板に固定されるとともに
、反射ミラー面内のシリコン基板上もしくは前記半導体
レーザチップの後方の前記シリコン基板上にレーザ出力
光検出用フォトダイオードが形成され、さらに前記シリ
コン基板上に信号検出用フォトダイオード、レーザ駆動
回路、増幅回路および光信号処理回路のうちいずれか１
以上が形成されたものである。Means for Solving the Problems A semiconductor laser device of the present invention has a V formed by a (111) plane on a (100) plane silicon substrate having an off angle of 5 to 15 degrees with the <110> direction as an axis. A groove is formed, and the surface of the (1,11) surface with an inclination close to 45 degrees with respect to the silicon substrate surface is used as a reflective mirror surface that reflects the laser beam, and the main surface of the silicon substrate on the side opposite to this surface is used as a reflective mirror surface that reflects the laser beam. The semiconductor laser chip is placed on the silicon substrate so that the front end surface of the semiconductor laser chip is parallel to the upper edge line of the surface opposite to the reflecting mirror surface. At the same time, a photodiode for detecting laser output light is formed on the silicon substrate within the plane of the reflection mirror or on the silicon substrate behind the semiconductor laser chip, and a photodiode for signal detection and a laser beam are further formed on the silicon substrate. Any one of a drive circuit, an amplifier circuit, and an optical signal processing circuit
The above is what was formed.
作用
この構造によれば、シリコン基板の主面が（１００）面
より５〜１５°のオフアングルを設けた面になっている
ため、（１１１）面により形成されたＶ状の溝の反射ミ
ラー面とシリコン基板の主面との角度θを３９°≦θ≦
４９°の範囲にすることができる。このためレーザチッ
プから出射されたレーザ光は反射ミラー面で反射された
後のレーザ光の中心軸をシリコン基板主面に対してほぼ
垂直方向にすることができる。Function: According to this structure, since the main surface of the silicon substrate is a surface with an off angle of 5 to 15 degrees from the (100) plane, the reflection mirror in the V-shaped groove formed by the (111) plane The angle θ between the surface and the main surface of the silicon substrate is 39°≦θ≦
It can be in the range of 49°. Therefore, the central axis of the laser beam emitted from the laser chip after being reflected by the reflecting mirror surface can be made substantially perpendicular to the main surface of the silicon substrate.
また、レーザチップを載置するヒートシンク用のシリコ
ン基板内に、レーザ出力光検出用フォトダイオード、レ
ーザ駆動回路、増幅回路および光信号処理回路が形成さ
れているため、組立時の角度の補正や組立工程等の複雑
さを無くずことかできる。In addition, a photodiode for laser output light detection, a laser drive circuit, an amplification circuit, and an optical signal processing circuit are formed in the silicon substrate for the heat sink on which the laser chip is mounted, so it is possible to correct the angle during assembly. It is possible to eliminate the complexity of processes, etc.
実施例
本発明の半導体レーザ装置の実施例を第１図に示した斜
視図とＡ−Ａ線に沿った断面図を参照して説明する。Embodiment An embodiment of the semiconductor laser device of the present invention will be described with reference to a perspective view and a sectional view taken along line A--A shown in FIG.
これは、＜１１０＞方向を回転軸として約９゜のオフア
ングルを持たせた（ ］、 ＯＯ）面のシリコン基板１
０上に両側の斜面が（１１１）面により形成される■状
の、溝（以後■溝と記す）１１が形成され、これらの斜
面のうちシリコン基板１０の表面に対する傾きθが４５
°に近い方の面を反射ミラー面１２とし、この面に対向
する側のシリコン基板の主面３３を他方の主面３２に対
して低くし、更にこの反射ミラー面に対向する面の溝上
端稜線に対して半導体レーザチップ１３の前方端面が平
行になるようにシリコン基板１０の表面にレーザチップ
１３を固定した構造である。なお、反射ミラー面１２の
表面には３０００〜５０００への金薄膜１４が形成され
ており、ミラーの反射率は９０％以」二になっている。This is a silicon substrate 1 with an off angle of about 9 degrees with the <110> direction as the rotation axis ( ), OO).
A ■-shaped groove (hereinafter referred to as ■groove) 11 is formed on the surface of the silicon substrate 10, and the slopes on both sides thereof are formed by (111) planes.
The surface closer to the angle is set as the reflecting mirror surface 12, the main surface 33 of the silicon substrate on the side opposite to this surface is made lower than the other main surface 32, and the groove upper end of the surface opposite to this reflecting mirror surface is made lower. In this structure, the laser chip 13 is fixed to the surface of the silicon substrate 10 so that the front end face of the semiconductor laser chip 13 is parallel to the ridgeline. Note that a gold thin film 14 of 3000 to 5000 mm is formed on the surface of the reflective mirror surface 12, and the reflectance of the mirror is 90% or more.
また、レーザチップ１３は発光部が下側になるようには
んだ材て固定されている。Further, the laser chip 13 is fixed with solder material so that the light emitting part is on the lower side.
この構造により、レーザチップ１３から水平方向に出射
されたレーザ光は光路１５に示すように反射ミラーで反
射されて垂直あるいは垂直方向に近い方向へ進み、出力
光として取り出される。With this structure, the laser light emitted from the laser chip 13 in the horizontal direction is reflected by the reflecting mirror as shown by the optical path 15, travels vertically or in a direction close to the vertical direction, and is extracted as output light.
また、シリコン基板の表面として約９°のオフアングル
を持たせた（１００）面を使用したが、実際使用上５〜
１５°のオフアングルを有する（１００）面のものでも
よい。このとき反射ミラー面のシリコン基板の表面に対
する傾きθを３９゜≦θ≦４９°の範囲におさえること
ができる。In addition, we used a (100) plane with an off angle of about 9 degrees as the surface of the silicon substrate, but in actual use it is
It may also be a (100) plane with an off angle of 15°. At this time, the inclination θ of the reflecting mirror surface with respect to the surface of the silicon substrate can be kept within the range of 39°≦θ≦49°.
なお、このことは後に述べる他の実施例においても同じ
ことが言える。Note that this also applies to other embodiments described later.
次に、本発明の半導体レーザ装置の他の実施例について
第２図に示した斜視図および断面図を参照して説明する
。Next, another embodiment of the semiconductor laser device of the present invention will be described with reference to a perspective view and a sectional view shown in FIG.
これは、第１図１図で説明したオフアングルを設けた（
１００）面のシリコン基板１０の主面３２に対して低く
した主面３３の領域を図に示すように、シリコン基板の
端部まででなく、少なくともレーザチップ１３が収納で
きる領域とした構造であり、反射ミラー面１２や半導体
レーザチップ１３の構造は第一１図で説明した通りであ
る。This is done by providing the off-angle explained in Fig.
As shown in the figure, the area of the main surface 33 that is lower than the main surface 32 of the silicon substrate 10 having a surface of 100) does not extend to the edge of the silicon substrate, but is designed to be an area that can accommodate at least the laser chip 13. The structures of the reflecting mirror surface 12 and the semiconductor laser chip 13 are as explained in FIG. 11.
次に、本発明の半導体レーザ装置の他の実施例について
第３図に示した断面図を参照して説明する。Next, another embodiment of the semiconductor laser device of the present invention will be described with reference to the cross-sectional view shown in FIG.
これは、＜１１０＞方向を回転軸として約９゜のオフア
ングルを持たぜた（１００）面のＰ型シリコン基板２０
上に、第１図で示したＶ溝が形成され、このＶ溝のシリ
コン基板２０の表面に対する傾きが４５°に近い方の面
をレーザ光を反射させる反射ミラー面２１とし、この面
に対向する側のシリコン基板の主面３３を他方の主面３
２に対して低くし、反射ミラー面のＰ型シリコン基板２
０側にｎ型の拡散領域２２が形成され、反射ミラー面２
１の上に絶縁用の酸化シリコン膜２３と金薄膜２４．が
積層され、反射ミラー面２１に対向する面の上端稜線に
対してレーザチップ１３の前方端面が平行になるように
レーザチップ１３がシリコン基板２０に固定された構造
である。This is a (100) plane P-type silicon substrate 20 with an off angle of approximately 9 degrees with the <110> direction as the rotation axis.
A V-groove shown in FIG. 1 is formed on the top, and the surface of the V-groove whose inclination with respect to the surface of the silicon substrate 20 is close to 45 degrees is used as a reflective mirror surface 21 that reflects the laser beam, and a surface opposite to this surface is formed. The main surface 33 of the silicon substrate on the side to be connected to the other main surface 3
P-type silicon substrate 2 with a reflective mirror surface
An n-type diffusion region 22 is formed on the 0 side, and the reflection mirror surface 2
1, an insulating silicon oxide film 23 and a gold thin film 24. are stacked, and the laser chip 13 is fixed to the silicon substrate 20 so that the front end surface of the laser chip 13 is parallel to the upper edge line of the surface facing the reflecting mirror surface 21.
なお、金薄膜２４の膜厚を５００〜１．０００ 人とし
て半透過膜とし、レーザ光の一部がＰ型シリコン基板２
０とｎ型拡散領域２３とて構成されたフォトダイオード
に入射される構造である。In addition, the thickness of the gold thin film 24 is set to 500 to 1,000 mm to make it a semi-transparent film, and a part of the laser beam is transmitted to the P-type silicon substrate 2.
This structure is such that the light is incident on a photodiode composed of a 0 and an n-type diffusion region 23.
この構造により、レーザチップ１３から水平方向に出射
されたレーザ光は、一部は金薄膜２４で形成された半透
過膜を通過してフォトダイオードに入射され、残りは半
透過膜で反射されて光路２５に示すように垂直あるいは
垂直に近い方向に進み、出力光として取り出される。With this structure, a portion of the laser light emitted horizontally from the laser chip 13 passes through the semi-transparent film formed of the gold thin film 24 and enters the photodiode, and the rest is reflected by the semi-transparent film. As shown in the optical path 25, the light travels in a vertical or nearly vertical direction and is extracted as output light.
なお、フォトダイオードに入射された光は、その光強度
に応じて電流信号に変化され、この電流信号がレーザチ
ップ駆動回路に帰還されてレーザ光の出力を一定にさせ
るのに使用される。Note that the light incident on the photodiode is changed into a current signal according to its light intensity, and this current signal is fed back to the laser chip drive circuit and used to keep the output of the laser light constant.
次に本発明の半導体レーザ装置の他の実施例について第
４図に示した断面図を参照して説明する。Next, another embodiment of the semiconductor laser device of the present invention will be described with reference to the cross-sectional view shown in FIG.
これは、＜ １１０＞方向を回転軸として約９゜のオフ
アングルを持たせた（１００）面のＰ型シリコン基板２
０上に、第１図で示したＶ溝が形成され、このＶ溝のシ
リコン基板２０の表面に対する傾きが４５°の近い方の
面をレーザ光を反射させる反射ミラー面２１とし、この
面に対向する側のシリコン基板の主面３３を他方の主面
３２に対して低（し反射ミラー面に対向する面の上端稜
線に対してレーザチップ１３の前方端面が平行になるよ
うにレーザチップ１３がシリコン基板２０に固定され、
レーザチップ１３の後方のＰ型シリコン基板２０の主面
３３あるいは主面３２と主面３３がなす段差にまたがっ
てｎ型拡散領２６が形成された構造である。This is a (100)-plane P-type silicon substrate 2 with an off angle of about 9 degrees with the <110> direction as the rotation axis.
A V-groove shown in FIG. The main surface 33 of the silicon substrate on the opposite side is placed at a lower level (lower than the other main surface 32), and the laser chip 13 is placed so that the front end surface of the laser chip 13 is parallel to the upper edge line of the surface opposite to the reflecting mirror surface. is fixed to the silicon substrate 20,
This is a structure in which an n-type diffusion region 26 is formed across the main surface 33 of the P-type silicon substrate 20 behind the laser chip 13 or the step between the main surfaces 32 and 33.
Ｐ型シリコン基板２０とｎ型拡散領域２６で形成される
フォトダイオードは、レーザチップ１３の後端面から出
射されたレーザ光を受光し、その光強度に応じて変化し
た電流信号を発生させる。The photodiode formed by the P-type silicon substrate 20 and the n-type diffusion region 26 receives the laser light emitted from the rear end face of the laser chip 13, and generates a current signal that changes depending on the light intensity.
この電流信号をレーザチップ駆動回路に帰還させて、レ
ーザチップ１３の前端面から出射されるレーザ光の強度
を一定にさせるモニタ用として利用される。This current signal is fed back to the laser chip drive circuit and used for monitoring to keep the intensity of the laser light emitted from the front end face of the laser chip 13 constant.
なお、レーザチップ１３の前端面から水平方向に出射さ
れたレーザ光は、金薄膜が被覆された反射ミラー面２１
で反射されて垂直あるいは垂直に近い方向に進み、出力
光として取り出される。Note that the laser beam emitted in the horizontal direction from the front end surface of the laser chip 13 is directed to a reflective mirror surface 21 coated with a thin gold film.
The light is reflected by the beam, propagates in a vertical or near-vertical direction, and is extracted as output light.
なお、２７はレーザチップ１３後端面より出射されたレ
ーザ光の光路、２８はレーザチップ１３前端面より出射
されたレーザ光の光路を示す。Note that 27 indicates the optical path of the laser beam emitted from the rear end surface of the laser chip 13, and 28 indicates the optical path of the laser beam emitted from the front end surface of the laser chip 13.
次に、本発明の半導体レーザ装置の他の実施例について
第５図に示した斜視図を参照して説明する。Next, another embodiment of the semiconductor laser device of the present invention will be described with reference to the perspective view shown in FIG.
この構造は、＜１１０＞方向を回転軸として約９°のオ
フアングルを持たせた（１００）面のＰ型シリコン基板
２０上に両側の斜面が（１１１）面により形成されるＶ
溝１１が形成され、これらの斜面のうちシリコン基板２
０の表面に対する傾きが４５°に近い方の反射ミラー面
１２とし、この面に対向する例のシリコン基板の主面３
３を他方の主面３２に対して低くし反射ミラー面に対向
する面の溝上端稜線に対してレーザチップ１３の前方端
面が平行になるようにシリコン基板２０の表面にレーザ
チップ１３が固定され、レーザチップ１３の後方にｎ型
拡散領域を形成することによリレーザ出力光検出用フォ
トダイオード２つが形成され、さらにシリコン基板２０
上に信号検出用フォトダイオード３０が形成されたもの
である。This structure consists of a V-type silicon substrate 20 with slopes on both sides formed by (111) planes on a (100) plane P-type silicon substrate 20 with an off-angle of about 9 degrees with the <110> direction as the rotation axis.
Grooves 11 are formed, and among these slopes, the silicon substrate 2
The reflective mirror surface 12 has an inclination closer to 45 degrees with respect to the surface of 0, and the main surface 3 of the silicon substrate in the example opposite to this surface
3 is lower than the other main surface 32, and the laser chip 13 is fixed to the surface of the silicon substrate 20 so that the front end surface of the laser chip 13 is parallel to the groove top edge line on the surface facing the reflecting mirror surface. , two photodiodes for detecting laser output light are formed by forming an n-type diffusion region behind the laser chip 13, and a silicon substrate 20.
A signal detection photodiode 30 is formed thereon.
この構成により、レーザチップ１３の前端面から水平方
向に出射されたレーザ光は、金薄膜が被覆された反射ミ
ラー面１２で反射されて光路１５に示すように垂直ある
いは垂直に近い方向に進み、出力光として取り出される
。この出力光が対象物で反射された信号光３１は、信号
検出用フォトダイオード３０に入力され、信号処理され
る。With this configuration, the laser beam emitted in the horizontal direction from the front end face of the laser chip 13 is reflected by the reflective mirror surface 12 coated with a thin gold film and travels in a vertical or nearly vertical direction as shown in the optical path 15. It is extracted as output light. Signal light 31, which is the output light reflected by the object, is input to a signal detection photodiode 30 and subjected to signal processing.
一方、レーザチップ１３の後端面より出射されたレーザ
光は、レーザ出力検出用フォトダイオード２９に入力さ
れ、光強度に応じた電流信号に変換される。この電流信
号がレーザチップ駆動回路に帰還されて、レーザチップ
の前端面より出射されたレーザ光の出力を一定にさせる
のに利用される。On the other hand, the laser light emitted from the rear end face of the laser chip 13 is input to the laser output detection photodiode 29, and is converted into a current signal according to the light intensity. This current signal is fed back to the laser chip drive circuit and is used to keep the output of the laser light emitted from the front end face of the laser chip constant.
この構造によれば、レーザ出力光検出用フォトダイオー
ド２９と信号検出用フォトダイオード３０を同一基板上
に形成しているので小型に集積化することができる。According to this structure, since the laser output light detection photodiode 29 and the signal detection photodiode 30 are formed on the same substrate, they can be integrated into a small size.
なお、実施例ではレーザ出力光検出用と信号検出用のフ
ォトダイオードを示したが、これに限られることはな（
、フォトダイオードから得られる信号の増幅回路、レー
ザチップの駆動回路および光信号処理回路等を同一基板
上に形成することができる。In addition, although the example shows a photodiode for laser output light detection and signal detection, the invention is not limited to this.
, an amplifying circuit for a signal obtained from a photodiode, a driving circuit for a laser chip, an optical signal processing circuit, and the like can be formed on the same substrate.
発明の効果
本発明の半導体レーザ装置によれば、＜１１０＞方向を
軸さして５〜１５°のオフアングルを有する（１００）
面のシリコン基板を用いて、（１１１）面により形成さ
れるＶ溝を形成するので、この（１，１１）面のうち一
つはシリコン基板の表面に対する傾きが約４５°となり
、この面を反射ミラー面とすることができる。この結果
、レーザチップから水平方向に出射されたレーザ光は反
射ミラー面で反射されて、はぼ垂直方向に取り出すこと
ができ、出射方向の位置合わせが簡単となる。Effects of the Invention According to the semiconductor laser device of the present invention, the (100)
Since a V-groove formed by the (111) plane is formed using a plane silicon substrate, one of the (1,11) planes has an inclination of about 45° with respect to the surface of the silicon substrate, It can be a reflective mirror surface. As a result, the laser beam emitted from the laser chip in the horizontal direction is reflected by the reflecting mirror surface and can be taken out in the substantially vertical direction, making it easy to align the laser beam in the emission direction.
また、レーザチップを載置するヒーＩ・シンク用のシリ
コン基板上に、レーザ出力光検出用フォトダイオード、
信号検出用フォトダイオード、レーザ駆動回路、増幅回
路および光信号処理回路のうちいずれかが形成されてい
るため、集積化されるとともに組立時の角度の補正や組
立工程の複雑さをなくすことができ、費用を削減するこ
とができる。In addition, on the silicon substrate for the heat sink on which the laser chip is mounted, there is a photodiode for detecting laser output light,
Since a photodiode for signal detection, a laser drive circuit, an amplifier circuit, and an optical signal processing circuit are formed, it is integrated, and it is possible to eliminate angle correction during assembly and complexity of the assembly process. , costs can be reduced.
第１図は本発明の半導体レーザ装置のＶ溝およびシリコ
ン基板の主面を低くした領域を有する場合の斜視図と断
面図、第２図は本発明の半導体レーザ装置の主面を低く
した領域をレーザチップが少なくとも収納できる領域に
限定した場合の斜視図と断面図、第３図は反射ミラー面
側にフォトダイオードが形成された本発明の半導体レー
ザ装置の断面図、第４図はレーザチップの後方にフォト
ダイオードが形成された本発明の半導体レーザ装置の断
面図、第５図はレーザチップを載置するシリコン基板上
に各種素子が形成された本発明の半導体レーザ装置の斜
視図、第６図はレーザチップが固定台に設置された従来
の半導体レーザ装置の１０・・・・・・シリコン基板、
１１・・・・・・Ｖ状の溝（Ｖ溝）、１２．１７．２１
・・・・・・反射ミラー面、１３・・・・・・半導体レ
ーザチップ、１４．２４・・・・・・金薄膜、１５，１
９．２５・・・・・・光路、１６・・・・・・四角錐状
凹部、１８・・・・・・反射ミラー面に向い合う面の四
角錐状凹部の上端稜線、２０・・・・・・Ｐ型シリコン
基板、２２．２６・・・・・・ｎ型拡散領域、２３・・
・・・・酸化シリコン膜、２７・・・・・・レーザチッ
プ後端面より出射されたレーザ光の光路、２８・・・・
・・レーザチップ前端面より出射されたレーザ光の光路
、２９・・・・・・レーザ出力光検出用フォトダイオー
ド、３０・・・・・・信号検出用フォトダイオード、３
１・・・・・・信号光、３２・・・・・・シリコン基板
の主面、３３・・・・・・低くしたシリコン基板の主面
。
代理人の氏名 弁理士小鍜治明 ほか２名ｑ
ｋＮ”） ゞ守 も （ト
レ１
ト腎６
＞呻 １
← 、＼ １い
゛せ 口 ｈｒ
１ ）幇FIG. 1 is a perspective view and a sectional view of a semiconductor laser device of the present invention having a V-groove and a region where the main surface of the silicon substrate is lowered, and FIG. 2 is a region where the main surface of the semiconductor laser device of the invention is lowered. FIG. 3 is a cross-sectional view of a semiconductor laser device of the present invention in which a photodiode is formed on the reflective mirror surface side, and FIG. 5 is a sectional view of a semiconductor laser device of the present invention in which a photodiode is formed at the rear of the semiconductor laser device of the present invention, and FIG. 5 is a perspective view of a semiconductor laser device of the present invention in which various elements are formed on a silicon substrate on which a laser chip is placed. Figure 6 shows a conventional semiconductor laser device in which a laser chip is installed on a fixed base.
11... V-shaped groove (V groove), 12.17.21
...Reflection mirror surface, 13 ... Semiconductor laser chip, 14.24 ... Gold thin film, 15,1
9.25... Optical path, 16... Square pyramidal recess, 18... Upper edge line of the square pyramidal recess on the surface facing the reflecting mirror surface, 20... ...P-type silicon substrate, 22.26...N-type diffusion region, 23...
...Silicon oxide film, 27...Optical path of laser light emitted from the rear end surface of the laser chip, 28...
...Optical path of laser light emitted from the front end surface of the laser chip, 29...Photodiode for laser output light detection, 30...Photodiode for signal detection, 3
1...Signal light, 32...Main surface of silicon substrate, 33...Main surface of lowered silicon substrate. Name of agent: Patent attorney Haruaki Ogata and 2 others q kN”)
Claims (6)
グルを有する（１００）面のシリコン基板上に、両側の
斜面が（１１１）面により構成されるＶ状の溝が形成さ
れ、同溝の斜面のうち前記シリコン基板表面に対する傾
きが４５°に近い面をレーザ光を反射する反射ミラー面
とし、この面に対向する側のシリコン基板の主面を他方
の主面に対して低くし、更に反射ミラー面に対向する面
の溝上端稜線に対して半導体レーザチップの前端面がほ
ぼ平行になるように前記半導体レーザチップが前記シリ
コン基板に固定されたことを特徴とする半導体レーザ装
置。(1) A V-shaped groove whose slopes on both sides are (111) planes is formed on a (100) plane silicon substrate with an off angle of 5 to 15 degrees with the <110> direction as the axis. Among the slopes of the groove, a surface having an inclination of nearly 45° with respect to the silicon substrate surface is used as a reflective mirror surface that reflects the laser beam, and the main surface of the silicon substrate on the side opposite to this surface is lowered relative to the other main surface. Further, the semiconductor laser device is further characterized in that the semiconductor laser chip is fixed to the silicon substrate so that the front end surface of the semiconductor laser chip is substantially parallel to the groove top edge line of the surface facing the reflection mirror surface.
ける主面を低くする領域を少なくとも半導体レーザチッ
プが収納できる領域に制限したことを特徴とする半導体
レーザ装置。(2) A semiconductor laser device characterized in that the area where the main surface of the silicon substrate according to claim 1 is lowered is limited to an area where at least a semiconductor laser chip can be accommodated.
ィング膜が施されていることを特徴とする請求項１また
は請求項２記載の半導体レーザ装置。(3) The semiconductor laser device according to claim 1 or 2, wherein a coating film that increases the reflectance of laser light is applied to the reflecting mirror surface.
ードが形成されていることを特徴とする請求項１または
請求項２または請求項３記載の半導体レーザ装置。(4) The semiconductor laser device according to claim 1, 2, or 3, wherein a photodiode is formed on a silicon substrate within the surface of the reflection mirror.
の同半導体レーザチップの後方にフォトダイオードが形
成されていることを特徴とする請求項１または請求項２
または請求項３記載の半導体レーザ装置。(5) Claim 1 or Claim 2, characterized in that a photodiode is formed behind the semiconductor laser chip on a silicon substrate to which the semiconductor laser chip is fixed.
Or a semiconductor laser device according to claim 3.
にレーザの駆動回路、フォトダイオード、同フォトダイ
オードから得られる信号の増幅回路、光信号処理回路の
うちいずれか１以上が形成されていることを特徴とする
請求項１または請求項２または請求項３記載の半導体レ
ーザ装置。(6) One or more of a laser drive circuit, a photodiode, a signal amplification circuit obtained from the photodiode, and an optical signal processing circuit are formed on the silicon substrate to which the semiconductor laser chip is fixed. 4. A semiconductor laser device according to claim 1, 2, or 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2323582A JP2892820B2 (en) | 1990-11-26 | 1990-11-26 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2323582A JP2892820B2 (en) | 1990-11-26 | 1990-11-26 | Semiconductor laser device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10358945A Division JPH11274654A (en) | 1998-12-17 | 1998-12-17 | Semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04196189A true JPH04196189A (en) | 1992-07-15 |
| JP2892820B2 JP2892820B2 (en) | 1999-05-17 |
Family
ID=18156319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2323582A Expired - Fee Related JP2892820B2 (en) | 1990-11-26 | 1990-11-26 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2892820B2 (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994027826A1 (en) * | 1993-05-20 | 1994-12-08 | Compaq Computer Corporation | Ink jet printhead assembly having aligned dual internal channel arrays |
| US5479426A (en) * | 1994-03-04 | 1995-12-26 | Matsushita Electronics Corporation | Semiconductor laser device with integrated reflector on a (511) tilted lattice plane silicon substrate |
| US5680385A (en) * | 1995-03-30 | 1997-10-21 | Nec Corporation | Optical head with a heat sink |
| US5719414A (en) * | 1993-03-16 | 1998-02-17 | Sato; Keiji | Photoelectric conversion semiconductor device with insulation film |
| US5793785A (en) * | 1994-03-04 | 1998-08-11 | Matsushita Electronics Corporation | Semiconductor laser device |
| WO2003067586A1 (en) * | 2002-02-08 | 2003-08-14 | Sony Corporation | Optical pickup and disk drive unit |
| US6693871B2 (en) | 1999-09-27 | 2004-02-17 | Kabushiki Kaisha Toshiba | Integrated unit, optical pickup, and optical recording medium drive device |
| JP2005203782A (en) * | 2004-01-13 | 2005-07-28 | Samsung Electronics Co Ltd | Micro optical bench structure and its manufacturing method |
| JP2010212491A (en) * | 2009-03-11 | 2010-09-24 | Sharp Corp | Mounting member and semiconductor light-emitting device with mounting member |
| US8471289B2 (en) | 2009-12-28 | 2013-06-25 | Sanyo Electric Co., Ltd. | Semiconductor laser device, optical pickup device and semiconductor device |
| CN116859532A (en) * | 2023-08-15 | 2023-10-10 | 武汉钧恒科技有限公司 | Optical path structure for silicon optical module and silicon optical module |
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| JPH01253983A (en) * | 1988-04-04 | 1989-10-11 | Mitsubishi Electric Corp | Semiconductor laser device |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5719414A (en) * | 1993-03-16 | 1998-02-17 | Sato; Keiji | Photoelectric conversion semiconductor device with insulation film |
| WO1994027826A1 (en) * | 1993-05-20 | 1994-12-08 | Compaq Computer Corporation | Ink jet printhead assembly having aligned dual internal channel arrays |
| US5479426A (en) * | 1994-03-04 | 1995-12-26 | Matsushita Electronics Corporation | Semiconductor laser device with integrated reflector on a (511) tilted lattice plane silicon substrate |
| US5793785A (en) * | 1994-03-04 | 1998-08-11 | Matsushita Electronics Corporation | Semiconductor laser device |
| US5680385A (en) * | 1995-03-30 | 1997-10-21 | Nec Corporation | Optical head with a heat sink |
| US6693871B2 (en) | 1999-09-27 | 2004-02-17 | Kabushiki Kaisha Toshiba | Integrated unit, optical pickup, and optical recording medium drive device |
| WO2003067586A1 (en) * | 2002-02-08 | 2003-08-14 | Sony Corporation | Optical pickup and disk drive unit |
| JP2005203782A (en) * | 2004-01-13 | 2005-07-28 | Samsung Electronics Co Ltd | Micro optical bench structure and its manufacturing method |
| JP2010212491A (en) * | 2009-03-11 | 2010-09-24 | Sharp Corp | Mounting member and semiconductor light-emitting device with mounting member |
| US8471289B2 (en) | 2009-12-28 | 2013-06-25 | Sanyo Electric Co., Ltd. | Semiconductor laser device, optical pickup device and semiconductor device |
| CN116859532A (en) * | 2023-08-15 | 2023-10-10 | 武汉钧恒科技有限公司 | Optical path structure for silicon optical module and silicon optical module |
| CN116859532B (en) * | 2023-08-15 | 2024-04-09 | 武汉钧恒科技有限公司 | Optical path structure for silicon optical module and silicon optical module |
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