JPH10198999A - Semiconductor laser device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To correctly perform the light quantity control of a forward emitted light, by arranging a light receiving element for monitoring the forward emitted light in the vicinity of the forward light-emitting end face of a semiconductor laser element and guiding a part of the forward emitted light from the laser element on this element to suppress influences of a return light from an optical recording medium and the component of the stray light generated inside a laser device. SOLUTION: A light receiving element for monitoring the output of forward emitted light 13 is arranged in the vicinity of the forward light-emitting end face of a semiconductor laser element 1 and a transparent member 18, whose one surface is brought into contact with the light receiving element for monitor 13 and whose counter surface opposed to this contact surface is parallel with this surface, is provided. Then, a part of the forward emitted light 5 is indirectly made incident on the light receiving element 13 by utilizing a total reflection while using this member. Consequently, the return light from an optical recording medium 7 and the component of the stray light generated in the inside of the device are scattered on the surface opposed with respect to the contact surface with the light receiving element for monitor 13 in the member 18 and they are not made incident on the element 13 and, thus, influences due to them are suppressed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor laser device suitable as a light source for an optical pickup device such as an optical disk.

[0002]

2. Description of the Related Art An optical pickup device focuses light emitted from a semiconductor laser element as a light source on an optical recording medium such as an optical disk by an objective lens, and records or reproduces information on the optical recording medium. It is. For use as an optical pickup, it is necessary to keep the output of the semiconductor laser element inside the semiconductor laser device constant.

FIG. 12 shows a schematic configuration diagram of a conventional semiconductor laser device. A semiconductor laser device 1 is mounted on a mount base 2 via a silicon substrate 3, and forward emission light 5 is emitted from the semiconductor laser device 1 through a window of a frame 4, condensed by an objective lens 6, and is recorded on an optical recording medium 7. Is incident on. Also,
On the optical path of the backward emission light 8 from the semiconductor laser element 1, a backward emission light output monitoring light receiving element 9 is arranged.

[0004] A stem 10 supports the apparatus. In the semiconductor laser device having such a structure, in order to keep the output of the forward emission light 5 from the semiconductor laser element 1 constant, a rear emission light output monitoring light receiving element 9 is arranged behind the semiconductor laser element 1. Light quantity control was being performed.

However, the output changes between the front emission light and the rear emission light of the semiconductor laser device do not exactly match due to the difference in the reflectivity of the end face or the effect of the return light from the optical recording medium. It is difficult to accurately control the light quantity of the front emission light of the semiconductor laser element by the light quantity control by the rear emission light. When a semiconductor laser device is used as a light source for information recording, it is necessary to accurately control the output of the forward emission light, and thus a light receiving element for monitoring the output of the forward emission light is required.

[0006] For this purpose, there is a structure shown in FIG. 13 as a structure for monitoring the output of the forward emission light with a light receiving element.

In this structure, a reflection hologram 12 and a front-emission light output monitoring light-receiving element (hereinafter, referred to as a monitoring light-receiving element) are provided on the front surface of front emission light 11 emitted horizontally from the end face of the semiconductor laser element 1. 13 is arranged so that a flat plate formed in a separate area is inclined. Then, a part of the forward emission light 11 is received by the monitoring light receiving element 13,
Most of the remaining forward emission light 11 is reflected hologram 12
Is reflected upward by the area of the hologram element 15,
The light is guided to the optical recording medium 7 through the objective lens 6. Then, the return light 16 reflected by the optical recording medium 7 is polarized by the hologram element 15 and guided to the signal detection light receiving element 17.

[0008]

When the optical system is in an ideal state, the return light 16 from the optical recording medium 7 is transmitted to the flat plate 1.
The light does not enter the monitor light-receiving element 13 formed on a part of the light-receiving element 4. However, actually, since the objective lens shifts on the optical path onto the optical recording medium 7, the return light from the optical recording medium 7 partially enters the monitoring light receiving element 13.

Also, there is a problem that it is difficult to perform accurate light quantity control because even a stray light component generated inside the semiconductor laser device enters the monitoring light receiving element 13.

SUMMARY OF THE INVENTION In view of the above circumstances, the present invention suppresses the influence of return light from an optical recording medium and the influence of stray light components inside a semiconductor laser device, and accurately controls the amount of forward emitted light. It is an object of the present invention to provide a semiconductor laser device which enables the above.

[0011]

In order to achieve the above object, a semiconductor laser device according to the present invention comprises a light receiving element for monitoring forward emitted light near a front end face of a forward emitted light of a semiconductor laser element. Means for guiding a part of the forward emission light from the semiconductor laser element to the monitoring light receiving element on the light receiving element for monitoring.

According to the present invention, the emitted light from the semiconductor laser element is not directly incident on the monitoring light receiving element.
Since the light is indirectly incident through the means for guiding to the monitoring light receiving element, it is possible to prevent light from another direction from being incident on the monitoring light receiving element.

Therefore, it is possible to perform accurate light quantity control of the forward emission light without being affected by the return light from the optical recording medium and the influence of the stray light component inside the semiconductor laser device.

[0014]

Embodiments of the present invention will be described with reference to the drawings.

Embodiment 1 FIG. 1 shows a semiconductor laser device according to a first embodiment of the present invention.

This structure includes a semiconductor laser device 1 as a light source, a mount table 2 for mounting the semiconductor laser device 1,
A silicon substrate 3 sandwiched between the semiconductor laser device 1 and the mount table 2, a stem 10 connected to the mount table 2,
A frame body 4 made of a metal cap that covers the entire semiconductor laser device, and disposed near a front emission light end face of the semiconductor laser element 1 in a direction perpendicular to an emission direction of laser light emitted from the semiconductor laser element 1; And a transparent member 18 disposed on and in contact with the monitor light receiving element 13. And the transparent member 18
Is a surface (upper surface) of at least a contact surface 19 of the forward emitted light to the monitoring light receiving element 13 and a surface facing the contact surface 19.
Are parallel three-dimensional structures.

Next, the operation of the semiconductor laser device having the above configuration will be described. Most of the forward emission light 5 from the semiconductor laser element 1 inside the semiconductor laser device is condensed by the objective lens 6 and enters the optical recording medium 7. On the other hand, a part of the front emission light 5 is transmitted from the side of the transparent member 18 made of a transparent rectangular parallelepiped arranged in contact with the monitoring light receiving element 13 arranged near the front emission end face of the semiconductor laser device 1. It is incident inside. The light incident from the side surface of the transparent member 18 is totally reflected on the surface inside the transparent member 18 opposite to the surface in contact with the monitoring light receiving element 13 and enters the monitoring light receiving element 13. The amount of current flowing to the semiconductor laser element 1 is controlled in accordance with the amount of light received by the monitoring light receiving element 13, and accurate light amount control is performed by applying feedback to the amount of emitted light.

As described above, in the semiconductor laser device according to the first embodiment of the present invention, the monitoring light receiving element 13 is disposed near the front emission light end face of the semiconductor laser element 1. , And a transparent member 18 having a surface in contact with the monitoring light-receiving element 13 and a surface facing the surface is parallel to each other, so that the forward emission light 5
Can be indirectly incident on the monitor light-receiving element 13 using total reflection.

For this reason, the return light from the optical recording medium 7 and the stray light component generated inside the semiconductor laser device are opposed to the surface of the transparent member 18 which is in contact with the monitoring light receiving element 13. And is not incident on the monitoring light receiving element 13. This makes it possible to perform accurate light quantity control of the forward emission light 5 from the semiconductor laser element 1 without being affected by the return light from the optical recording medium 7 and suppressing the influence of stray light inside the semiconductor laser device. it can.

(Embodiment 2) FIG. 2 shows a semiconductor laser device according to a second embodiment of the present invention.

As shown in FIG. 2, the difference from FIG. 1 is that the transparent member 181 has a contact surface 19 with the monitor light receiving element 13.
Is a three-dimensional structure inclined with respect to the contact surface 19. The other structure is the same as that of FIG. 1, and the same members are denoted by the same reference numerals and description thereof will be omitted.

According to the above structure, the transparent member 181 is
Since the surface facing the contact surface 19 to the monitor light receiving element 13 is inclined with respect to the contact surface 19, the transparent member 1
The light incident on the inside 81 can be reflected further deeply, and in the case of the monitor light receiving element 13 of the same size, it can be incident on a wider range.

(Embodiment 3) Next, a semiconductor laser device according to a third embodiment of the present invention is shown in FIG.

As shown in FIG. 3, the difference from FIG. 1 is that the transparent member 182 has a three-dimensional structure having a convex curved surface from the side surface to the upper surface on the semiconductor laser device 1 side. The other structure is the same as that of FIG. 1, and the same members are denoted by the same reference numerals and description thereof will be omitted.

In this configuration, the semiconductor laser device 1
Since the laser light can be refracted further in the depth direction of the transparent member 182 on the side surface on the side, the light incident on the transparent member 182 can be efficiently incident on a wider range of the monitor light receiving element 13. .

In this configuration, the resin can be easily formed by hanging the resin on the monitor light receiving element 13.

(Embodiment 4) FIG. 4 shows a semiconductor laser device according to a fourth embodiment of the present invention.

This semiconductor laser device has at least a contact surface 19 of the forward emission light to the output monitoring light receiving element 13 and a surface opposed to the contact surface 19 shown in FIG. 1 of the first embodiment. Has a structure in which a reflective film 23 is formed on a surface of the parallel transparent member 18 facing a contact surface with the monitoring light receiving element 13 by means such as metal deposition. Since other structures are the same as those of the first embodiment, the same members are denoted by the same reference numerals and description thereof will be omitted.

According to this structure, the light incident from the side surface of the transparent member 18 is reflected by the reflection film 23 on the surface (upper surface) opposite to the surface in contact with the monitor light receiving element 13 inside the transparent member 18. Then, the light is reflected and enters the monitor light receiving element 13.

At this time, since the reflection film 23 is provided, the reflection efficiency is improved as compared with the case where total reflection by only the transparent member 18 is used.

The reflection film 23 on the upper surface of the transparent member 18 prevents the return light from the optical recording medium 7 and the stray light component generated inside the semiconductor laser device from entering the light receiving element 13 for monitoring. This can be prevented more than in the case where only the member 18 is used. For this reason, it is possible to perform more accurate light quantity control of the forward emission light 5 from the semiconductor laser element 1 without being affected by the return light from the optical recording medium 7 and the influence of stray light inside the semiconductor laser device. .

The structure in which the reflective film 23 is provided on the upper surface of the transparent member 18 has been described with reference to the transparent member 18 used in the first embodiment, but will be described in the second and third embodiments. The reflective film 23 may be provided on the upper surfaces of the transparent members 181 and 182 described above.

Also in this case, since the reflection film is similarly provided, the reflection efficiency is improved as compared with the case where total reflection by only the transparent member is used, and the return from the optical recording medium is performed by the reflection film on the upper surface of the transparent member. Light and stray light components generated inside the semiconductor laser device are monitored by the light receiving element 1 for monitoring.
3 can be further prevented.

(Embodiment 5) Next, in the above embodiments, the case where a transparent member is used as a member arranged in contact with the monitor light receiving element has been described.
As shown in FIG. 5, a reflection plate 20 having a reflection surface can be provided at a position facing the light receiving element 13 for monitoring. The other structure is the same as that of FIG. 1, and the same members are denoted by the same reference numerals and description thereof will be omitted.

According to this structure, the forward emission light 5 from the semiconductor laser device 1 can be efficiently transmitted to the monitoring light receiving device 13 with a simpler structure by providing the reflecting plate 20 having the reflecting surface with the optimum inclination. It can be incident.

(Embodiment 6) FIG. 6 shows a semiconductor laser device according to a sixth embodiment of the present invention.

In this semiconductor laser device, a semiconductor laser element 1 as a light source, a semiconductor substrate 21 on which the semiconductor laser element 1 is mounted, and a monitoring light receiving element 13 are formed and mounted on and in contact with the semiconductor light receiving element 13 for monitoring. And a frame member 4 for accommodating them.

The transparent member 18 has at least a contact surface 19 of the front emission light with the output monitoring light receiving element 13 and a surface opposed to the contact surface 19 shown in FIG. 1 of the first embodiment. Are parallel three-dimensional structures.

A part of the semiconductor substrate 21 has a recessed portion provided with a step etched from the surface of the monitoring light-receiving element 13. A reflection surface 22 having an inclination of about 45 degrees is formed at the step, and the semiconductor laser device 1 is mounted in the recessed region so that the forward emission light 11 is reflected by the reflection surface 22 at 90 degrees. The monitoring light receiving element 13 and the semiconductor laser element 1 are mounted on a plane parallel to each other.

Further, in this embodiment, the monitoring light receiving element 13 is formed in the vicinity of the reflection surface 22 of about 45 degrees, and most of the forward emission light 11 is reflected by the reflection surface, and the objective lens 6 Through the optical recording medium 7, the remaining part of the front emission light 11 enters the inside of the transparent member 18 from the side surface, is totally reflected on the upper surface, and enters the monitor light receiving element 13. It has become.

Next, the operation of the semiconductor laser device having the above configuration will be described. The forward emission light 11 emitted from the semiconductor laser device 1 is mostly reflected by the reflection surface 22 of about 45 degrees, and is emitted in a direction perpendicular to the upper surface of the semiconductor substrate 21. A part of the forward emission light 11 from the semiconductor laser element 1 is transmitted from the side of the transparent member 18 disposed in contact with the monitor light receiving element 13 disposed in the vicinity of the reflection surface 22 at about 45 degrees. Incident on the inside of. The light incident from the side of the transparent member 18 is
Inside 8, the light is totally reflected on the surface opposite to the surface in contact with the monitoring light receiving element 13 and enters the monitoring light receiving element 13. By applying feedback to the emitted light amount according to the amount of light received by the monitoring light receiving element 13, accurate light amount control is performed.

As described above, in the semiconductor laser device according to the sixth embodiment of the present invention, the transparent member whose contact surface with the monitor light receiving element 13 and the surface (upper surface) opposed to the contact surface are parallel. Because of the arrangement, the return light from the optical recording medium 7 and the stray light component inside the semiconductor laser device are scattered by the upper surface of the transparent member 18 and do not enter the monitor light receiving element 13. Therefore, the semiconductor laser device 1
Thus, accurate light amount control of the forward emission light 11 can be performed.

In this embodiment, a reflection surface 22 of about 45 degrees is formed by etching on a semiconductor substrate 21 on which the monitoring light receiving element 13 is formed, and the forward emission light 11 from the semiconductor laser element 1 is formed. Since the semiconductor laser device 1 and the monitoring light receiving device 13 can be arranged in parallel planes because of the structure in which light is emitted in the vertical direction with respect to the upper surface of the semiconductor substrate 21, the assembling adjustment is facilitated and the size and thickness are reduced In addition, there is an advantage that the cost can be reduced.

(Seventh Embodiment) Next, a semiconductor laser device according to a seventh embodiment of the present invention is shown in FIG.

As shown in FIG. 7, the difference from FIG. 6 is that the transparent member 181 has a contact surface 19 with the monitor light receiving element 13.
Is a three-dimensional structure that is inclined with respect to the contact surface 19. Since other structures are the same as those in FIG. 6, the same members are denoted by the same reference numerals and description thereof will be omitted.

According to the above-described structure, since the surface facing the contact surface is inclined with respect to the contact surface, the inclination angle is adjusted and optimized, so that the transparent member 181 is formed.
The light that has entered the inside can be more efficiently made to enter the monitor light receiving element 13.

(Eighth Embodiment) Next, FIG. 8 shows a semiconductor laser device according to an eighth embodiment of the present invention.

As shown in FIG. 8, the difference from FIG. 6 is that the transparent member 182 has a convex three-dimensional structure from the side surface to the upper surface on the semiconductor laser device 1 side.

Since the other structure is the same as that of FIG. 6, the same members are denoted by the same reference numerals and description thereof will be omitted.

In the above configuration, since the side surface on the side of the semiconductor laser element 1 has a convex curved surface, the laser beam is incident on the transparent member 182 by utilizing the refraction of the laser light to the transparent member 182. In the case of the monitor light receiving element 13 having the same size, the light thus emitted can be efficiently incident on a wider range. For this reason, there is an effect that accurate light amount control of the forward emission light 11 can be performed.

(Embodiment 9) FIG. 9 shows a semiconductor laser device according to a ninth embodiment of the present invention.

The semiconductor laser device according to the present embodiment has at least a contact surface 19 and a contact surface 19 for the output monitoring light receiving element 13 of the forward emission light shown in FIG. 6 of the sixth embodiment. The transparent member 18 whose surface opposite to the transparent member 18 is parallel
The structure is such that a reflection film 23 is formed on a surface facing a contact surface with the monitor light receiving element 13 by means such as metal evaporation. Since other structures are the same as those of the sixth embodiment, the same members are denoted by the same reference numerals and description thereof will be omitted.

According to this structure, the light incident from the side surface of the transparent member 18 is reflected by the reflection film 2 on the surface facing the surface in contact with the monitor light receiving element 13 inside the transparent member 18.
The light is reflected at 3 and enters the monitor light receiving element 13. At this time, since the reflection film 23 is provided, the reflection efficiency is improved as compared with the case where the total reflection by only the transparent member 18 is used.

The return light from the optical recording medium 7 and the stray light component generated inside the semiconductor laser device are reflected by the reflective film 23 on the upper surface of the transparent member 18 so that the monitoring light receiving element 13 can be used.
Is not affected by the return light from the optical recording medium 7 and the influence of stray light inside the semiconductor laser device. More accurate light amount control can be performed.

The structure in which the reflection film 23 is provided on the upper surface of the transparent member 18 has been described with reference to the transparent member 18 used in the sixth embodiment, but will be described in the seventh and eighth embodiments. The reflective film 23 may be provided on the upper surfaces of the transparent members 181 and 182 described above.

Also in this case, since the reflection film is similarly provided, the reflection efficiency is improved as compared with the case where total reflection by only the transparent member is used, and the reflection film on the upper surface of the transparent member returns from the optical recording medium. Light and stray light components generated inside the semiconductor laser device are reflected by the monitoring light receiving element 1.
3 can be further prevented.

(Embodiment 10) FIG. 10 shows a semiconductor laser device according to a tenth embodiment of the present invention.

In this structure, as shown in FIG. 10, a reflecting plate 20 having a reflecting surface is provided at a position facing the light receiving element 13 for monitoring. Since other structures are the same as those in FIG. 6, the same members are denoted by the same reference numerals and description thereof will be omitted.

According to this configuration, the front emission light 11 from the semiconductor laser element 1 can be efficiently transmitted to the monitoring light receiving element 13 with a simpler structure by giving the reflection plate 20 having the reflection surface an optimum inclination. It can be incident.

Further, accurate output control of the forward emission light 11 can be performed without being affected by return light from the optical recording medium 7 or stray light components generated inside the semiconductor laser device.

(Embodiment 11) FIG. 11 shows a semiconductor laser device according to an eleventh embodiment of the present invention.

The semiconductor laser device according to this embodiment includes a semiconductor laser device 1 mounted on a semiconductor substrate 21.
And forward emission light 11 emitted from the semiconductor laser element 1
A hologram element 15 disposed on an optical path reflected by the reflection surface 22 at 90 degrees, a signal detection light-receiving element 17 formed on the semiconductor substrate 21 and receiving the return light 16 deflected by the hologram element 15, A monitoring light receiving element 13 formed on a semiconductor substrate 21 and a monitoring light receiving element 13
And a transparent member 18 having a reflective film formed on the upper surface. Other structures are shown in FIG.
Since the structure is the same as that shown in FIG. 6, the same members as those in FIG.

Next, the operation of the semiconductor laser device having the above configuration will be described. Most of the forward emission light 11 from the semiconductor laser element 1 inside the semiconductor laser device is reflected on the reflection surface 22.
At the hologram element 15, that is, transmitted through the hologram element 15, and then transmitted through the optical recording medium 7 by the objective lens 6.
Light is collected and reflected on the top. The reflected return light 16 is
Following the reverse path to the above, the light enters the hologram element 15 and is diffracted first-order. This diffracted light is applied to the signal detecting light receiving element 1 formed on the semiconductor substrate 21 in the semiconductor laser device.
7 and is calculated and output.

On the other hand, a part of the forward emission light 11 from the semiconductor laser element 1 inside the semiconductor laser device is transparently arranged in contact with the monitor light receiving element 13 arranged near the reflection surface 22 of about 45 degrees. Transparent member 1 from the side of member 18
8 is incident. The light incident from the side surface of the transparent member 18 is efficiently reflected by the reflection film 23 on the parallel surface facing the surface in contact with the monitor light receiving element 13 inside the transparent member 18, 13 is incident. By applying feedback to the emitted light amount according to the amount of light received by the monitor light receiving element 13, accurate light amount control can be performed.

In the semiconductor laser device according to the eleventh embodiment of the present invention, the reflected light from the optical recording medium 7 and the stray light component generated inside the semiconductor laser device are reflected by the reflection film 23 on the transparent member 18. Since the structure prevents light from entering the monitoring light receiving element 13, it is not affected by return light from the optical recording medium 7 and stray light inside the semiconductor laser device, and is not affected by the semiconductor laser element 1. Outgoing light 1
In addition to performing accurate light amount control of (1), the use of the hologram element 15 enables integration of a servo signal to the optical recording medium 7 and an optical system for detecting a recording signal of the optical recording medium.

Although the means shown in FIG. 9 of the ninth embodiment has been described as a means for guiding forward emission light from the semiconductor laser element 1 to the monitoring light-receiving element 13, the sixth embodiment and the Embodiment 7, Embodiment 8 and Embodiment 1
Any of the zero-embodiments can be used.

A hologram element 15 arranged on the optical path emitted from the semiconductor laser element 1 and a signal detection light-receiving element 17 for receiving the return light 16 deflected by the hologram element 15 are provided. It can be used in the first embodiment, the second embodiment, the third embodiment, the fourth embodiment, and the fifth embodiment.

Thus, the optical system for detecting the servo signal to the optical recording medium 7 and the signal to be recorded on the optical recording medium can be integrated.

As described above, according to the present embodiment,
Although the monitoring light receiving element 13 and the reflection surface 22 of about 45 degrees are formed on the same semiconductor substrate 21, the monitoring light receiving element 13 is formed separately and has a reflection surface of about 45 degrees. A configuration in which the reflection plate is arranged at a predetermined position can be adopted.

It should be noted that even when a stem type semiconductor laser device is used instead of the above structure as the semiconductor laser device in the present embodiment, accurate output control of forward emitted light can be performed.

Although the semiconductor laser device described in this embodiment has been described as being used as a light source of an optical pickup device, the semiconductor laser device is also used as a light source capable of accurately controlling the amount of light as a light source for optical fiber communication. Can do things.

[0072]

According to the semiconductor laser device of the present invention, the monitoring light receiving element is arranged near the front emission light end face of the semiconductor laser element, and a part of the forward emission light from the semiconductor laser element is used as the monitoring light receiving element. In this structure, the forward emission light does not directly enter the monitoring light receiving element through the means for guiding the light to the monitor, so that the influence of the return light from the recording medium and the stray light inside the semiconductor laser device. Unaffected by ingredients. Therefore, it is possible to accurately control the amount of forward emitted light.

[Brief description of the drawings]

FIG. 1 shows a semiconductor laser device according to a first embodiment of the present invention, in which a monitoring light receiving element is arranged in a direction perpendicular to emitted light and a transparent member parallel to the monitoring light receiving element is arranged. Cross section shown

FIG. 2 is a semiconductor laser device according to a second embodiment of the present invention, in which a monitoring light receiving element is disposed in a direction perpendicular to the emitted light, and a transparent member having an inclined upper surface of the monitoring light receiving element is disposed; Cross section showing

FIG. 3 is a transparent member according to a third embodiment of the present invention, in which a light receiving element for monitoring is arranged in a direction perpendicular to emitted light, and has a curved curved surface on the side and top surfaces of the light receiving element for monitoring. Sectional view showing a semiconductor laser device in which is arranged

FIG. 4 shows a fourth embodiment of the present invention in which a monitoring light receiving element is disposed in a direction perpendicular to the emitted light, and a parallel transparent member having a reflection film is disposed on the monitoring light receiving element. Sectional view showing a semiconductor laser device

FIG. 5 is a cross-sectional view showing a semiconductor laser device according to a fifth embodiment of the present invention, in which a monitoring light receiving element is arranged in a direction perpendicular to the outgoing light, and a reflector is arranged on the monitoring light receiving element. Figure

FIG. 6 shows a semiconductor laser device according to a sixth embodiment of the present invention, in which a monitoring light receiving element is arranged in parallel with outgoing light, and a parallel transparent member is arranged on the monitoring light receiving element. Sectional view

FIG. 7 shows a semiconductor laser device according to a seventh embodiment of the present invention, in which a monitoring light receiving element is arranged in parallel to emitted light, and a transparent member having an inclined upper surface of the monitoring light receiving element is arranged. Cross section shown

FIG. 8 is a cross-sectional view of a monitor light receiving element according to an eighth embodiment of the present invention, wherein a transparent member having a convex curved surface extending from a side surface to an upper surface is provided on the monitor light receiving element; Sectional view showing an arranged semiconductor laser device

FIG. 9 shows a semiconductor according to a ninth embodiment of the present invention, in which a monitor light receiving element is arranged in parallel to emitted light, and a parallel transparent member having a reflective film is arranged on the monitor light receiving element. Sectional view showing a laser device

FIG. 10 is a cross-sectional view showing a semiconductor laser device according to a tenth embodiment of the present invention, in which a monitoring light receiving element is arranged in parallel to outgoing light, and a reflector is arranged on the monitoring light receiving element.

FIG. 11 is a block diagram showing a monitor light receiving element and a signal detecting light receiving element integrally formed on a semiconductor substrate according to an eleventh embodiment of the present invention, and a hologram element on an optical path of forward emitted light; Sectional view showing a semiconductor laser device in which a light receiving element for monitoring is arranged in parallel to emitted light, and a parallel transparent member having a reflection film is arranged on the light receiving element for monitoring.

FIG. 12 is a cross-sectional view illustrating a semiconductor laser device including a light-receiving element for monitoring backward emission light output therein according to Conventional Example 1.

FIG. 13 is a cross-sectional view showing a semiconductor laser device according to Conventional Example 2 in which a monitoring light receiving element and a reflection hologram are arranged.

[Explanation of symbols]

REFERENCE SIGNS LIST 1 semiconductor laser element 2 mount base 3 silicon substrate 4 frame body 5, 11 forward emission light 6 objective lens 7 optical recording medium 8 backward emission light 9 backward emission light output monitoring light receiving element 10 stem 12 reflection hologram 13 forward emission light output monitor Light receiving element for monitoring (light receiving element for monitoring) 14 Flat plate 15 Hologram element 16 Return light 17 Light receiving element for signal detection 18, 181, 182 Transparent member 19 Contact surface 20 Reflecting plate 21 Semiconductor substrate 22 Reflecting surface 23 Reflecting film

Claims (11)

[Claims] 1. A front emission light output monitoring light receiving element is disposed in a direction perpendicular to an emission direction near a front emission light end face of a semiconductor laser element, and a part of the forward emission light from the semiconductor laser element is disposed. A semiconductor laser device having a structure in which the light is incident on the front emission light output monitoring light receiving element via a means for guiding the light to the front emission light output monitoring light receiving element. 2. A semiconductor laser device comprising a reflecting surface for changing the direction of emitted light in front of an end face of a forward emitted light of a semiconductor laser element, and near the reflecting surface, the forward emitted light parallel to the emitting direction of the semiconductor laser element. An output monitoring light receiving element is arranged, and a part of the forward emission light from the semiconductor laser element is incident on the monitoring light receiving element via a means for guiding the front emission light output monitoring light receiving element. Semiconductor laser device. 3. A means for guiding a part of the forward emission light from the semiconductor laser element to the forward emission light output monitoring light receiving element is disposed in contact with the front emission light output monitoring light receiving element.
3. The semiconductor according to claim 1, wherein at least a surface (upper surface) facing the contact surface with the contact surface to the light-receiving element for monitoring the front emission light output is made of a transparent member having a three-dimensional structure parallel to each other. Laser device. 4. A means for guiding a part of the forward emission light from the semiconductor laser device to the forward emission light output monitoring light receiving element is disposed in contact with the front emission light output monitoring light receiving element.
2. A transparent member having a three-dimensional structure having at least a surface (upper surface) facing a contact surface to the light receiving element for monitoring the front emission light output monitor, wherein the transparent member is inclined with respect to the contact surface. Item 3. A semiconductor laser device according to item 2. 5. A means for guiding a part of forward emitted light from a semiconductor laser device to a light emitting device for monitoring a forward emitted light output is disposed in contact with the light receiving device for monitoring a forward emitted light output, and at least the semiconductor laser device. 3. The semiconductor laser device according to claim 1, wherein the semiconductor laser device is formed of a transparent member having a three-dimensional structure having a convex curved surface from the side surface to the upper surface. 6. A three-dimensional transparent member disposed in contact with the front emission light output monitoring light receiving element, the means for guiding a part of the forward emission light from the semiconductor laser element to the front emission light output monitoring light receiving element. 6. The semiconductor laser device according to claim 3, wherein a reflection film is provided on an upper surface of the semiconductor laser device. 7. A means for guiding a part of the forward emission light from the semiconductor laser element to the front emission light output monitoring light receiving element comprises a reflector disposed on the front emission light output monitoring light receiving element. 3. The semiconductor laser device according to claim 1, wherein: 8. A signal detecting light receiving element is arranged on a surface parallel to the front emission light output monitoring light receiving element. The semiconductor laser device according to claim 5, claim 6, or claim 7. 9. The semiconductor laser device according to claim 8, wherein the light-receiving element for monitoring the output light from the front and the light-receiving element for detecting the signal are integrally formed on the same semiconductor substrate. 10. A semiconductor laser device, wherein a reflection surface formed in front of a front emission light end face of a semiconductor laser element is integrally formed on a semiconductor substrate on which a front emission light output monitoring light receiving element is formed. The semiconductor laser device according to claim 2, wherein 11. A hologram element for guiding return light from an optical recording medium to a signal detecting light receiving element on an optical path of forward emitted light from a semiconductor laser element. Or a semiconductor laser device according to claim 10.