JPS61236112A - 分子線源 - Google Patents

分子線源

Info

Publication number
JPS61236112A
JPS61236112A JP60076367A JP7636785A JPS61236112A JP S61236112 A JPS61236112 A JP S61236112A JP 60076367 A JP60076367 A JP 60076367A JP 7636785 A JP7636785 A JP 7636785A JP S61236112 A JPS61236112 A JP S61236112A
Authority
JP
Japan
Prior art keywords
crucible
heater
molecular beam
heat
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60076367A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0318735B2 (enExample
Inventor
Norio Kanai
金井　謙雄
Naoyuki Tamura
直行 田村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60076367A priority Critical patent/JPS61236112A/ja
Publication of JPS61236112A publication Critical patent/JPS61236112A/ja
Publication of JPH0318735B2 publication Critical patent/JPH0318735B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP60076367A 1985-04-12 1985-04-12 分子線源 Granted JPS61236112A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60076367A JPS61236112A (ja) 1985-04-12 1985-04-12 分子線源

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60076367A JPS61236112A (ja) 1985-04-12 1985-04-12 分子線源

Publications (2)

Publication Number Publication Date
JPS61236112A true JPS61236112A (ja) 1986-10-21
JPH0318735B2 JPH0318735B2 (enExample) 1991-03-13

Family

ID=13603374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60076367A Granted JPS61236112A (ja) 1985-04-12 1985-04-12 分子線源

Country Status (1)

Country Link
JP (1) JPS61236112A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61251116A (ja) * 1985-04-30 1986-11-08 Fujitsu Ltd 分子線結晶成長装置用分子線源

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5394872A (en) * 1977-01-31 1978-08-19 Mitsubishi Electric Corp Fixing supporter for molecule beam evaporation source cell
JPS57201522A (en) * 1981-06-01 1982-12-10 Mitsubishi Electric Corp Cell for vacuum deposition
JPS59121831U (ja) * 1983-02-04 1984-08-16 日本真空技術株式会社 分子線エピタキシ−用蒸発源熱シ−ルド
JPS60115218A (ja) * 1983-11-26 1985-06-21 Anelva Corp 分子ビームエピタキシャル成長装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5394872A (en) * 1977-01-31 1978-08-19 Mitsubishi Electric Corp Fixing supporter for molecule beam evaporation source cell
JPS57201522A (en) * 1981-06-01 1982-12-10 Mitsubishi Electric Corp Cell for vacuum deposition
JPS59121831U (ja) * 1983-02-04 1984-08-16 日本真空技術株式会社 分子線エピタキシ−用蒸発源熱シ−ルド
JPS60115218A (ja) * 1983-11-26 1985-06-21 Anelva Corp 分子ビームエピタキシャル成長装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61251116A (ja) * 1985-04-30 1986-11-08 Fujitsu Ltd 分子線結晶成長装置用分子線源

Also Published As

Publication number Publication date
JPH0318735B2 (enExample) 1991-03-13

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