JPH0318735B2 - - Google Patents

Info

Publication number
JPH0318735B2
JPH0318735B2 JP60076367A JP7636785A JPH0318735B2 JP H0318735 B2 JPH0318735 B2 JP H0318735B2 JP 60076367 A JP60076367 A JP 60076367A JP 7636785 A JP7636785 A JP 7636785A JP H0318735 B2 JPH0318735 B2 JP H0318735B2
Authority
JP
Japan
Prior art keywords
crucible
heat shield
molecular beam
support base
heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60076367A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61236112A (ja
Inventor
Norio Kanai
Naoyuki Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60076367A priority Critical patent/JPS61236112A/ja
Publication of JPS61236112A publication Critical patent/JPS61236112A/ja
Publication of JPH0318735B2 publication Critical patent/JPH0318735B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0432Apparatus for thermal treatment mainly by conduction

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP60076367A 1985-04-12 1985-04-12 分子線源 Granted JPS61236112A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60076367A JPS61236112A (ja) 1985-04-12 1985-04-12 分子線源

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60076367A JPS61236112A (ja) 1985-04-12 1985-04-12 分子線源

Publications (2)

Publication Number Publication Date
JPS61236112A JPS61236112A (ja) 1986-10-21
JPH0318735B2 true JPH0318735B2 (enExample) 1991-03-13

Family

ID=13603374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60076367A Granted JPS61236112A (ja) 1985-04-12 1985-04-12 分子線源

Country Status (1)

Country Link
JP (1) JPS61236112A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61251116A (ja) * 1985-04-30 1986-11-08 Fujitsu Ltd 分子線結晶成長装置用分子線源

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5394872A (en) * 1977-01-31 1978-08-19 Mitsubishi Electric Corp Fixing supporter for molecule beam evaporation source cell
JPS57201522A (en) * 1981-06-01 1982-12-10 Mitsubishi Electric Corp Cell for vacuum deposition
JPS59121831U (ja) * 1983-02-04 1984-08-16 日本真空技術株式会社 分子線エピタキシ−用蒸発源熱シ−ルド
JPS60115218A (ja) * 1983-11-26 1985-06-21 Anelva Corp 分子ビームエピタキシャル成長装置

Also Published As

Publication number Publication date
JPS61236112A (ja) 1986-10-21

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