JPH0318735B2 - - Google Patents
Info
- Publication number
- JPH0318735B2 JPH0318735B2 JP60076367A JP7636785A JPH0318735B2 JP H0318735 B2 JPH0318735 B2 JP H0318735B2 JP 60076367 A JP60076367 A JP 60076367A JP 7636785 A JP7636785 A JP 7636785A JP H0318735 B2 JPH0318735 B2 JP H0318735B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- heat shield
- molecular beam
- support base
- heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0432—Apparatus for thermal treatment mainly by conduction
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60076367A JPS61236112A (ja) | 1985-04-12 | 1985-04-12 | 分子線源 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60076367A JPS61236112A (ja) | 1985-04-12 | 1985-04-12 | 分子線源 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61236112A JPS61236112A (ja) | 1986-10-21 |
| JPH0318735B2 true JPH0318735B2 (enExample) | 1991-03-13 |
Family
ID=13603374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60076367A Granted JPS61236112A (ja) | 1985-04-12 | 1985-04-12 | 分子線源 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61236112A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61251116A (ja) * | 1985-04-30 | 1986-11-08 | Fujitsu Ltd | 分子線結晶成長装置用分子線源 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5394872A (en) * | 1977-01-31 | 1978-08-19 | Mitsubishi Electric Corp | Fixing supporter for molecule beam evaporation source cell |
| JPS57201522A (en) * | 1981-06-01 | 1982-12-10 | Mitsubishi Electric Corp | Cell for vacuum deposition |
| JPS59121831U (ja) * | 1983-02-04 | 1984-08-16 | 日本真空技術株式会社 | 分子線エピタキシ−用蒸発源熱シ−ルド |
| JPS60115218A (ja) * | 1983-11-26 | 1985-06-21 | Anelva Corp | 分子ビームエピタキシャル成長装置 |
-
1985
- 1985-04-12 JP JP60076367A patent/JPS61236112A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61236112A (ja) | 1986-10-21 |
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