JPS61233365A - Substrate for capillary column - Google Patents
Substrate for capillary columnInfo
- Publication number
- JPS61233365A JPS61233365A JP59265093A JP26509384A JPS61233365A JP S61233365 A JPS61233365 A JP S61233365A JP 59265093 A JP59265093 A JP 59265093A JP 26509384 A JP26509384 A JP 26509384A JP S61233365 A JPS61233365 A JP S61233365A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- groove
- capillary column
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
- G01N30/02—Column chromatography
- G01N30/60—Construction of the column
- G01N30/6095—Micromachined or nanomachined, e.g. micro- or nanosize
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、ガス・クロマトグラフ用のキャピラリィ・カ
ラムにおけるキャピラリイ・カラム用基板に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a capillary column substrate in a capillary column for gas chromatography.
(従来技術とその問題点)
シリコン・ウェハーに半導体プロセスのエツチング技術
を用いて溝を形成し、その上にガラス板をV着させる従
来におけるシリコン・ウェハーキャピラリイ・カラムは
、キャピラリイ・カラム用基砺 xs +/ +
1−4 〒IIl+ JL7 々t sh
rn n 、rz 而1、 シ1. 二 曲
■■
点があった。(Prior art and its problems) The conventional silicon wafer capillary column, in which a groove is formed in a silicon wafer using semiconductor process etching technology, and a glass plate is V-bonded on top of the groove, is not suitable for capillary columns. Moto xs +/ +
1-4 〒IIl+ JL7 t sh
rn n, rz t1, si1. There were two songs ■■ points.
(発明の目的)
本発明は、このような問題点を解消するものであり、プ
ロセス工数を減らして歩留り率の高いキャピラリイ・カ
ラム用基板を提供することを目的とする。(Object of the Invention) The present invention solves these problems, and aims to provide a capillary column substrate that reduces the number of process steps and has a high yield rate.
(発明の概要)
本発明は、少なくともシリコンが蒸着法により蒸着でき
る板材の一面にシリコン膜を形成し、溝を穿設して成る
キャピラリィ・カラム用基板であり、この基板にガラス
板を密着させて流体通路用のキャピラリイ・カラムとし
て使用できるキャピラリィ・カラム用基板である。(Summary of the Invention) The present invention is a capillary column substrate in which a silicon film is formed on one surface of a plate material on which at least silicon can be deposited by vapor deposition method, and a groove is bored therein, and a glass plate is tightly attached to this substrate. This is a capillary column substrate that can be used as a capillary column for fluid passages.
(発明の実施例) 本発明の実施例を図面に基づいて説明する。(Example of the invention) Embodiments of the present invention will be described based on the drawings.
第1図(1)から(6)は、本発明のプロセス工数を示
す図であり、ガラス板1(以下、本発明においては、少
なくともシリコンが蒸着法、例えば真空蒸着法またはス
バタリング蒸着法により蒸着できる板材であれば材質に
は限定されないが説明の便室上−実施例としてガラス板
を用いて説明する。)にシリコン膜2を形成し、エツチ
ング処理でシリコン膜2に溝3を形成する状態を示す図
である。FIGS. 1 (1) to (6) are diagrams showing the number of process steps of the present invention. The material is not limited as long as it is a plate material that can be used, but the silicon film 2 is formed on the toilet (explained using a glass plate as an example), and the grooves 3 are formed in the silicon film 2 by etching. FIG.
ガラス板1に、シリコン膜2を直流二極スバタリング装
置による標準的な動作条件(例えばガス圧約10 ’T
orr、電圧約1kv)で厚さ約2111mに形成され
る(vii図(1)参照)、直流二極スパタリング装置
は既に公知であるため説明を詳略する。A silicon film 2 is deposited on a glass plate 1 under standard operating conditions (e.g. gas pressure of about 10'T) using a DC bipolar sputtering device.
The DC bipolar sputtering device, which is formed to a thickness of about 2111 m at a voltage of about 1 kV (see Fig. VII (1)), is already well known, so a detailed description thereof will be omitted.
シリコン膜2が蒸着されたその上にレジスト膜4を形成
する(第1図(3)参照)。A resist film 4 is formed on the silicon film 2 deposited thereon (see FIG. 1(3)).
紫外線露光及び現像によりシリコンWX2に、形成する
とほぼ同じ幅の溝3をレジスト膜4に形成する(第1図
(4)参照)。Grooves 3 having approximately the same width as those formed in the silicon WX2 are formed in the resist film 4 by exposure to ultraviolet rays and development (see FIG. 1 (4)).
シリコン膜2に、HF、HNO,、CH,C0OHの混
合溶液でエツチング処理して底面にほぼ1μ糟のシリコ
ン溝底面1l12 aを残して幅200μ論のW2Bを
形成し、レジスト膜4を除去してキャピラリィ・カラム
用基板Aが形成される(tjfJ1図(5)(6)参照
)。The silicon film 2 is etched with a mixed solution of HF, HNO, CH, and COOH to form a W2B with a width of 200 μm, leaving a silicon groove bottom surface 1l12a with a thickness of approximately 1 μm on the bottom surface, and the resist film 4 is removed. Thus, a capillary column substrate A is formed (see tjfJ1 diagrams (5) and (6)).
尚、本実施例では、ガラス板1の平面−面にのみシリコ
ン膜2を蒸着してキャピラリイ・カラムを形成をする手
順を示したが、第2図に示すように、ガラス板1の他面
に対しても同手順でシリコン[2を蒸着しキャピラリイ
・カラムを形成し、両面にキャピラリイ・カラムを有す
るキャピラリイ・カラム用基板とすることも可能である
。In this embodiment, the procedure for forming a capillary column by depositing the silicon film 2 only on the plane-to-plane surface of the glass plate 1 was shown, but as shown in FIG. It is also possible to form a capillary column by vapor-depositing silicon [2] on the surface using the same procedure to obtain a capillary column substrate having capillary columns on both sides.
(発明の効果)
本発゛明は、以上の構成であるから、従来におけるシリ
コン・ウェハーにエツチング処理により溝を形成するよ
りもプロセス工数が少ないため、歩留り率の高いキャピ
ラリイ・カラム用基板である。(Effects of the Invention) Since the present invention has the above-described structure, the number of process steps is lower than that of forming grooves in a silicon wafer by etching in the conventional method, and therefore it can be used as a capillary column substrate with a high yield rate. be.
さらに、ガラス板にシリコン膜を蒸着してキャピラリイ
・カラムを形成するため、両面キャピラリイ・カラムか
ら成るキャピラリィ・カラム用基板を形成することがで
きる。Furthermore, since the capillary column is formed by depositing a silicon film on a glass plate, it is possible to form a capillary column substrate consisting of a double-sided capillary column.
第1図は、本発明の工程及び構造を示す一部拡大断面図
である。
1・・・ガラス板 2・・・シリコン膜2a・・・シ
リコン溝底面膜 3・・・溝4・・・レノスト膜FIG. 1 is a partially enlarged sectional view showing the process and structure of the present invention. 1...Glass plate 2...Silicon film 2a...Silicon groove bottom film 3...Groove 4...Renost film
Claims (1)
に形成されたシリコン膜と、該シリコン膜に穿設した溝
とより成るキャピラリィ・カラム用基板。A capillary column substrate comprising a plate material onto which silicon can be deposited by vapor deposition, a silicon film formed on the surface of the plate material, and a groove bored in the silicon film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59265093A JPS61233365A (en) | 1984-12-15 | 1984-12-15 | Substrate for capillary column |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59265093A JPS61233365A (en) | 1984-12-15 | 1984-12-15 | Substrate for capillary column |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61233365A true JPS61233365A (en) | 1986-10-17 |
Family
ID=17412501
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59265093A Pending JPS61233365A (en) | 1984-12-15 | 1984-12-15 | Substrate for capillary column |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61233365A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4935040A (en) * | 1989-03-29 | 1990-06-19 | The Perkin-Elmer Corporation | Miniature devices useful for gas chromatography |
US5087275A (en) * | 1987-09-22 | 1992-02-11 | Thomson-Csf | Electrochemical sensor having microcavities |
WO1997028490A1 (en) * | 1996-02-02 | 1997-08-07 | University Of Washington | Covered microchannels and the microfabrication thereof |
US5720798A (en) * | 1996-04-30 | 1998-02-24 | Hewlett-Packard Company | Micromachined analyte trap for gas phase streams |
KR100460769B1 (en) * | 2001-11-19 | 2004-12-08 | 홍석인 | The fabrication method of micro-fluidics channel using screenprinting process for bio-microsystem |
US7147695B2 (en) * | 2002-12-13 | 2006-12-12 | New Jersey Institute Of Technology | Microfabricated microconcentrator for sensors and gas chromatography |
-
1984
- 1984-12-15 JP JP59265093A patent/JPS61233365A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5087275A (en) * | 1987-09-22 | 1992-02-11 | Thomson-Csf | Electrochemical sensor having microcavities |
US4935040A (en) * | 1989-03-29 | 1990-06-19 | The Perkin-Elmer Corporation | Miniature devices useful for gas chromatography |
WO1997028490A1 (en) * | 1996-02-02 | 1997-08-07 | University Of Washington | Covered microchannels and the microfabrication thereof |
US5720798A (en) * | 1996-04-30 | 1998-02-24 | Hewlett-Packard Company | Micromachined analyte trap for gas phase streams |
KR100460769B1 (en) * | 2001-11-19 | 2004-12-08 | 홍석인 | The fabrication method of micro-fluidics channel using screenprinting process for bio-microsystem |
US7147695B2 (en) * | 2002-12-13 | 2006-12-12 | New Jersey Institute Of Technology | Microfabricated microconcentrator for sensors and gas chromatography |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH0243330B2 (en) | ||
JPS61233365A (en) | Substrate for capillary column | |
JPS61273546A (en) | Production of metal silicide photomask | |
JPS61233366A (en) | Substrate for capillary column | |
JPS61155858A (en) | Substrate for capillary column | |
JPH0562888A (en) | X-ray mask and transferring method for pattern using the same | |
JPS613489A (en) | Manufacture of semiconductor device | |
KR100235304B1 (en) | Manufacturing method of spacer for fed | |
JPS6169133A (en) | Exposing process of soft x-ray | |
JPS6283661A (en) | Preparation of silicon wafer capillary column | |
JPH07161627A (en) | Formation of alignment mark | |
JPH10270357A (en) | Mask for manufacturing semiconductor devices and manufacture thereof | |
JPS59171124A (en) | Method for burying photoresist film | |
JPS6153725A (en) | Formation of mask for x-ray exposure | |
JP3354959B2 (en) | Photomask manufacturing method | |
JPS58207047A (en) | Production of mask | |
KR960012636B1 (en) | Method for fabricating the bonding pad of a semiconductor element | |
JPH04101413A (en) | Method of forming semiconductor recrystalline layer | |
JPS63104327A (en) | X-ray mask and manufacture thereof | |
JPH05335339A (en) | Method of forming t-shaped gate electrode | |
JPH05251425A (en) | Method for etching au film | |
JPH05107553A (en) | Manufacture of metallic wiring of active matrix lcd | |
JPS62149135A (en) | Method of pattern formation | |
JPS593953A (en) | Manufacture of semiconductor device | |
JPS62234333A (en) | Formation of mask for processing fine groove |