JPS6122875B2 - - Google Patents
Info
- Publication number
- JPS6122875B2 JPS6122875B2 JP52157616A JP15761677A JPS6122875B2 JP S6122875 B2 JPS6122875 B2 JP S6122875B2 JP 52157616 A JP52157616 A JP 52157616A JP 15761677 A JP15761677 A JP 15761677A JP S6122875 B2 JPS6122875 B2 JP S6122875B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- electrodes
- light
- sensitive resistor
- flat substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 16
- 238000001514 detection method Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000779 smoke Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Testing Or Calibration Of Command Recording Devices (AREA)
- Light Receiving Elements (AREA)
Description
【発明の詳細な説明】
本発明は、温度及び光を同時に検出できる単一
の温度・光センサーに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a single temperature and light sensor that can detect temperature and light simultaneously.
従来、温度検出は、サーミスタ、熱電対あるい
は、水銀温度計などが用いられてきた。 Conventionally, a thermistor, thermocouple, mercury thermometer, or the like has been used for temperature detection.
サーミスタは、温度係数の大きな抵抗体の抵抗
温度特性を利用し、熱電対は、熱起電力特性を利
用し、水銀温度計は、水銀の熱膨張を利用して、
それぞれ温度を測定する。 Thermistors utilize the resistance-temperature characteristics of a resistor with a large temperature coefficient, thermocouples utilize thermoelectromotive force characteristics, and mercury thermometers utilize the thermal expansion of mercury.
Measure the temperature of each.
一方、光検出は、光電導素子あるいは、光起電
力素子、光電子放射素子などにより検出されて来
た。光電導素子は、光による抵抗変化を利用し、
光起電力素子は、光による起電力の発生を利用し
光電子放射素子は、光による電子放射を利用して
それぞれ光を検出する。 On the other hand, photodetection has been performed using a photoconductive element, a photovoltaic element, a photoelectron emitting element, or the like. Photoconductive elements utilize resistance changes caused by light,
A photovoltaic element uses the generation of electromotive force caused by light, and a photoelectron emitting element detects light using electron emission caused by light.
以上の如く、従来、種々の温度センサー、光セ
ンサーはそれぞれ独立したセンサーとしては存在
していたが、温度，光を同時に検出できるセンサ
ー（以下、温度・光センサーと言う。）は、存在
しなかつた。したがつて、温度と光を同時に検出
する場合、あるいは、光センサーを煙検知素子と
して使用する場合、あるいは、温度上昇と、煙発
生の両面から警報を発する火災報知器を作る場合
など、従来、単独センサー２個を用いなければな
らなかつたために、構成が複雑であると共に、光
センサーの温度補償などの信頼性も十分でなく当
然価格も高くなつていた。 As mentioned above, various temperature sensors and light sensors have conventionally existed as independent sensors, but there is no sensor that can simultaneously detect temperature and light (hereinafter referred to as a temperature/light sensor). Ta. Therefore, when detecting temperature and light at the same time, when using an optical sensor as a smoke detection element, or when creating a fire alarm that issues an alarm from both temperature rise and smoke generation, conventional methods are used. Since two individual sensors had to be used, the configuration was complicated, the reliability of the temperature compensation of the optical sensor was insufficient, and the price was naturally high.
また、単独のセンサー２個のため、温度分布，
光強度分布などが存在する場合、光センサーの位
置および温度センサーの位置により、光強度と温
度が一致しないと言う欠点があり、事実上、光セ
ンサーの温度補償ができなかつた。 In addition, since there are two independent sensors, temperature distribution,
When there is a light intensity distribution, etc., there is a drawback that the light intensity and temperature do not match depending on the position of the optical sensor and the position of the temperature sensor, and it is virtually impossible to compensate the temperature of the optical sensor.
本発明の温度・光センサーは、従来の単独セン
サーを複数個用いた場合に生じる欠点を解消した
ものである。 The temperature/light sensor of the present invention eliminates the drawbacks that occur when a plurality of conventional single sensors are used.
本発明の構成は、感光性平板状基板の一つの表
面に、一対の電極を形成し、かつ他の表面に感温
性抵抗体と一対の電極とが部分的に重り合うよう
に、電極および、感温性抵抗体を形成したことを
特徴とする。 The structure of the present invention is such that a pair of electrodes is formed on one surface of a photosensitive flat substrate, and a temperature-sensitive resistor and a pair of electrodes are formed on the other surface so that the electrodes and the pair of electrodes partially overlap each other. , is characterized by forming a temperature-sensitive resistor.
第１図に本発明の構成を詳述する。 The configuration of the present invention will be explained in detail in FIG.
１は感光性平板状基板で、例えば、Se，CdS，
GdSe，ZnTe，CdTe，ZnOなどの基板である。
２，３は感光性平板状基板１上に形成した電極
で、例えば、Ag−Pd，RuO2などの厚膜導体、
Au−Pt，Cu，Alなどの薄膜導体や、メツキ導体
でなる。４は一対の電極３と部分的に重り合うよ
うにして設けた感温性抵抗体で、例えば、Mn，
Co，Ni，Fe，Cuなどの２〜４成分系複合酸化
物、V2O5，WO3などの遷移元素の酸化物に、
P2O5，B2O5などの酸化物を添加したガラス系酸
化物、Ce，Sr，Pbなどを添加したBaTiO3などを
厚膜，薄膜，メツキなどの技術により形成したも
のである。 1 is a photosensitive flat substrate, for example, Se, CdS,
Substrates such as GdSe, ZnTe, CdTe, and ZnO.
2 and 3 are electrodes formed on the photosensitive flat substrate 1, for example, thick film conductors such as Ag-Pd, RuO 2 , etc.
Made of thin film conductors such as Au-Pt, Cu, Al, etc., or plated conductors. 4 is a temperature-sensitive resistor provided so as to partially overlap the pair of electrodes 3, and is made of, for example, Mn,
For two to four component complex oxides such as Co, Ni, Fe, and Cu, and oxides of transition elements such as V 2 O 5 and WO 3 ,
Glass-based oxides containing oxides such as P 2 O 5 and B 2 O 5 , BaTiO 3 containing Ce, Sr, Pb, etc., are formed using thick film, thin film, plating, and other techniques.
感光性平板状基板１は、光強度により、抵抗が
変化するために、電極２間の抵抗を測定すること
により、光を検出できる。感温性抵抗体４は、温
度により、抵抗が変化するために、電極３間の抵
抗を測定することにより温度を検出できる。しか
も、感温性抵抗体４は、感光性平板状基板１の表
面上に形成されているので、温度と光を同時に、
単一の温度・光センサーで検出できる。また、温
度と光の検出部が一体化されているために、温度
分布、光強度分布の存在下においても、両者は、
温度，光強度は一致する。本発明は、前述の如
く、厚膜技術、薄膜技術などを十分利用して、温
度，光検出部を一体化しているので、従来のセン
サー２個使用に比べ、はるかに小型化できるため
に、カメラなどの小型機器の受光素子などの温度
補償に最適である。更に、一体化、小型化などに
より温度・光センサー部は、従来に比べ、簡素化
されるために、価格が安く、信頼性も向上して安
定した検出ができる。 Since the resistance of the photosensitive flat substrate 1 changes depending on the light intensity, light can be detected by measuring the resistance between the electrodes 2. Since the resistance of the temperature-sensitive resistor 4 changes depending on the temperature, the temperature can be detected by measuring the resistance between the electrodes 3. Moreover, since the temperature-sensitive resistor 4 is formed on the surface of the photosensitive flat substrate 1, it can simultaneously control temperature and light.
Can be detected with a single temperature/light sensor. In addition, since the temperature and light detection parts are integrated, both can be detected even in the presence of temperature distribution and light intensity distribution.
The temperature and light intensity match. As mentioned above, the present invention makes full use of thick film technology, thin film technology, etc., and integrates the temperature and light detection parts, so it can be much smaller than the conventional method of using two sensors. It is ideal for temperature compensation of light receiving elements in small devices such as cameras. Furthermore, the temperature/light sensor section is simpler than before due to integration and miniaturization, resulting in lower cost, improved reliability, and stable detection.
第１図に示した構成は、電極２間の抵抗つま
り、感光性平板状基板１の抵抗が、電極３間の感
温性抵抗体の抵抗に比べ十分高い時にのみ、有用
であると言う問題がある。つまり、光強度が強く
なると感光性平板状基板１の抵抗が小さくなり、
電極３間の感温性抵抗体の抵抗に比べ、同程度ま
たは小さくなつた場合には、電極３間の抵抗も、
感光性平板状基板の抵抗を測定することになり、
感温性抵抗体の測定が事実上できなくなる欠点が
ある。 The problem with the configuration shown in FIG. 1 is that it is only useful when the resistance between the electrodes 2, that is, the resistance of the photosensitive flat substrate 1, is sufficiently higher than the resistance of the temperature-sensitive resistor between the electrodes 3. There is. In other words, as the light intensity increases, the resistance of the photosensitive flat substrate 1 decreases,
If the resistance between the electrodes 3 is the same or smaller than the resistance of the temperature-sensitive resistor between the electrodes 3,
The resistance of the photosensitive flat substrate will be measured.
There is a drawback that measurement of temperature-sensitive resistors is virtually impossible.
上記欠点を第２図に示す構成により、解消する
ことができる。すなわち、第１図の構成において
感光性平板状基板１の一つの表面に、電気的絶縁
層５、例えば、ガラス、SiO2，Al2O3などの厚膜
あるいは薄膜の層を形成し、さらに、電極３およ
び感温性抵抗体４を形成し、感光性平板状基板１
と、電極３および感温性抵抗体４とを電気的に絶
縁することにより、前述の欠点を解消することが
できる。 The above drawbacks can be overcome by the configuration shown in FIG. That is, in the configuration shown in FIG. 1, an electrically insulating layer 5, for example, a thick or thin layer of glass, SiO 2 , Al 2 O 3 , etc., is formed on one surface of the photosensitive flat substrate 1, and , electrodes 3 and temperature-sensitive resistors 4 are formed, and a photosensitive flat substrate 1 is formed.
By electrically insulating the electrode 3 and the temperature-sensitive resistor 4 from each other, the above-mentioned drawbacks can be overcome.
第３図および第４図は、第１図，第２図記載の
感温性抵抗体４を形成したのちに、感光性平板状
基板１および感温性抵抗体４の全面および電極
２，３を電気的絶縁性で、なおかつ透明な層また
は膜６で、被覆することにより、外部雰囲気、例
えば水蒸気などの影響による抵抗変化などから、
保護することができる。 3 and 4 show the entire surface of the photosensitive flat substrate 1 and the temperature sensitive resistor 4 and the electrodes 2 and 3 after the temperature sensitive resistor 4 shown in FIGS. 1 and 2 is formed. By covering it with an electrically insulating and transparent layer or film 6, it can be protected from changes in resistance due to the influence of external atmosphere, such as water vapor.
can be protected.
以上の如く、本発明の温度・光センサーは、感
光性平板状基板の一つの表面に、一対の電極を形
成し、かつ、他の表面上に、感温性抵抗体と電極
とが部分的に重り合うように一対の電極および感
温性抵抗体を形成したので、温度と光を同時に検
出したい場合、従来の単独センサー２個使用する
ものに比べ非常に有効なものであり、また整流性
接合を必要としない積層であるのできわめて簡単
に形成できる。 As described above, the temperature/light sensor of the present invention has a pair of electrodes formed on one surface of a photosensitive flat substrate, and a temperature sensitive resistor and an electrode partially formed on the other surface. A pair of electrodes and a temperature-sensitive resistor are formed so that they overlap, so when you want to detect temperature and light at the same time, it is much more effective than the conventional method that uses two individual sensors. Since it is a laminated structure that does not require bonding, it can be formed extremely easily.
第１図は本発明の温度・光センサーの一実施例
構造を示す側面図、第２図は本発明の他の実施例
を示す側面図、第３図は本発明の他の実施例を示
す側断面図、第４図は本発明の他の実施例を示す
側断面図である。
１……感光性平板状基板、２，３……電極、４
……感温性抵抗体、５……電気的絶縁層、６……
電気的絶縁性で透明な膜。
Fig. 1 is a side view showing the structure of one embodiment of the temperature/light sensor of the present invention, Fig. 2 is a side view showing another embodiment of the invention, and Fig. 3 is a side view showing another embodiment of the invention. FIG. 4 is a side sectional view showing another embodiment of the present invention. 1... Photosensitive flat substrate, 2, 3... Electrode, 4
... Temperature-sensitive resistor, 5 ... Electrical insulating layer, 6 ...
An electrically insulating and transparent film.
Claims (1)
極を形成し、かつ、他の表面上に、感温性抵抗体
と電極とが部分的に重り合うように一対の電極お
よび感温性抵抗体を形成したことを特徴とする温
度・光センサー。 ２ 感光平板状基板の一つの表面に一対の電極を
形成し、かつ他の表面を、電気絶縁層で被覆し、
その電気絶縁層の上に、感温性抵抗体と電極とが
部分的に重り合うように、一対の電極および感温
性抵抗体を形成したことを特徴とする特許請求の
範囲第１項記載の温度・光センサー。 ３ 感温性抵抗体の全面および電極を電気的に絶
縁性で、かつ透明な層で被覆したことを特徴とす
る特許請求の範囲第１項または第２項記載の温
度・光センサー。[Claims] 1. A pair of electrodes are formed on one surface of a photosensitive flat substrate, and a pair of electrodes are formed on the other surface of the photosensitive resistor so that they partially overlap. A temperature/light sensor characterized by forming an electrode and a temperature-sensitive resistor. 2. Forming a pair of electrodes on one surface of the photosensitive flat substrate, and covering the other surface with an electrically insulating layer,
Claim 1, characterized in that a pair of electrodes and a temperature-sensitive resistor are formed on the electrical insulating layer so that the temperature-sensitive resistor and the electrode partially overlap. Temperature and light sensor. 3. The temperature/light sensor according to claim 1 or 2, wherein the entire surface of the temperature-sensitive resistor and the electrodes are coated with an electrically insulating and transparent layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15761677A JPS5490984A (en) | 1977-12-28 | 1977-12-28 | Temperature and optical sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15761677A JPS5490984A (en) | 1977-12-28 | 1977-12-28 | Temperature and optical sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5490984A JPS5490984A (en) | 1979-07-19 |
| JPS6122875B2 true JPS6122875B2 (en) | 1986-06-03 |
Family
ID=15653612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15761677A Granted JPS5490984A (en) | 1977-12-28 | 1977-12-28 | Temperature and optical sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5490984A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0416864Y2 (en) * | 1985-06-24 | 1992-04-15 |
-
1977
- 1977-12-28 JP JP15761677A patent/JPS5490984A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0416864Y2 (en) * | 1985-06-24 | 1992-04-15 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5490984A (en) | 1979-07-19 |
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