JPS61228621A - Formation of epitaxial film - Google Patents

Formation of epitaxial film

Info

Publication number
JPS61228621A
JPS61228621A JP7151485A JP7151485A JPS61228621A JP S61228621 A JPS61228621 A JP S61228621A JP 7151485 A JP7151485 A JP 7151485A JP 7151485 A JP7151485 A JP 7151485A JP S61228621 A JPS61228621 A JP S61228621A
Authority
JP
Japan
Prior art keywords
film
silicon
silicon oxide
oxide film
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7151485A
Other languages
Japanese (ja)
Inventor
Kiyoteru Kobayashi
清輝 小林
Shigeo Nagao
長尾　繁雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7151485A priority Critical patent/JPS61228621A/en
Publication of JPS61228621A publication Critical patent/JPS61228621A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To form the single crystal silicon epitaxial film of little crystalline defect selectively by forming the thin second silicon oxide film between the first silicon oxide films arranged distantly on a silicon substrate and forming an exposed part of the silicon substrate in the central part of said second film, after which growing an epitaxial film on the exposed part selectively. CONSTITUTION:After the first silicon oxide film 2 is grown on a silicon substrate 1, a pattern is formed. The second silicon oxide film 6 which is thinner than the first silicon oxide film 2 is formed. A polysilicon film 4 is formed over a surface of the first and second silicon oxide films. This film 4 is left along the side walls of the first silicon oxide film 2 by anisotropic etching. The second silicon oxide film 6 is etched by using said polysilicon film 4 so that the exposed part 5 of the silicon substrate 1 is obtained. Then the polysilicon film 4 is removed by etching and a single crystal silicon epitaxial film 3 is grown selectively on said exposed part 5 of the silicon substrate 1.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、シリコン基板上にエピタキシャル膜を選択
的に形成する方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for selectively forming an epitaxial film on a silicon substrate.

〔従来の技術〕[Conventional technology]

第２図（ａ）　、　　（ｂ）はシリコン基板上に単結晶
シリコン・エピタキシャル膜を選択的に形成する方法を
説明するための概要図で、１１はシリコン基板、１２は
このシリコン基板１１の上面にパターン形成されたシリ
コン酸化膜である。FIGS. 2(a) and 2(b) are schematic diagrams for explaining the method of selectively forming a single crystal silicon epitaxial film on a silicon substrate, where 11 is a silicon substrate and 12 is the upper surface of this silicon substrate 11. It is a silicon oxide film that is patterned.

第２図（＆）Ｋ示したシリコン基板１１に適切な条件、
たとえば成長温度、成長速度、成長前クリーニング方法
等を選ぶことによって、単結晶シリコン轡エピタキシャ
ル膜１３をシリコン酸化膜１２に覆われていないシリコ
ン基板１１の上面だけに成長させる。その結果、第２図
（ｂ）　Ｋ示すように。Appropriate conditions for the silicon substrate 11 shown in FIG.
For example, by selecting the growth temperature, growth rate, pre-growth cleaning method, etc., the single crystal silicon epitaxial film 13 is grown only on the upper surface of the silicon substrate 11 that is not covered with the silicon oxide film 12. As a result, as shown in Figure 2(b) K.

シリコン基＆１１上忙シリコン酸化膜１２および単結晶
シリコン・エピタキシャル膜１３を選択的に形成するこ
とができる。A silicon oxide film 12 and a single crystal silicon epitaxial film 13 can be selectively formed on the silicon base &11.

〔発明が解決しようとする問題点」 しかし、従来のエピタキシャル膜形成方法では。[Problem that the invention attempts to solve] However, with conventional epitaxial film formation methods.

単結晶シリコンｅエピタキシャル膜１３が等方的に成長
するため、単結晶シリコン・エピタキシャル膜１３のシ
リコン酸化膜１２に、接する部分に応力が加わり、第３
図の単結晶シリコン・エピタキシャル膜１３の斜線で示
す結晶欠陥部１４が生じる゛という問題点があった。Since the single-crystal silicon e-epitaxial film 13 grows isotropically, stress is applied to the portion of the single-crystal silicon epitaxial film 13 in contact with the silicon oxide film 12.
There is a problem in that crystal defect portions 14 shown by diagonal lines occur in the single crystal silicon epitaxial film 13 shown in the figure.

この発明は　かかる問題点を解決するためＫなされたも
ので、結晶欠陥の少ない単結晶シリコン・エピタキシャ
ル膜を選択的に形成する方法を得ることを目的とする。The present invention was made to solve these problems, and its object is to provide a method for selectively forming a single-crystal silicon epitaxial film with few crystal defects.

〔問題点を解決するための手段〕[Means for solving problems]

この発明に係るエピタキシャル膜の形成方法は。 A method for forming an epitaxial film according to the present invention is as follows.

シリコン基板上に離間して投砂た第１のシリコン酸化膜
の間に第１のシリコン酸化膜より薄い第２のシリコン酸
化膜を形成し、この第２のシリコン酸化膜間にシリコン
基板の嵐出部を形成したのち、この露出部上にエピタキ
シャル膜を離間した第１のシリコン酸化膜間に亘って選
択的に成長させるものである。A second silicon oxide film, which is thinner than the first silicon oxide film, is formed between the first silicon oxide films deposited at a distance on the silicon substrate, and a storm of the silicon substrate is formed between the second silicon oxide films. After the exposed portion is formed, an epitaxial film is selectively grown on the exposed portion between the spaced first silicon oxide films.

〔作用〕[Effect]

この発明においては、シリコン基板上に離間して設けた
第１のシリコン酸化膜の間に形成した第２の酸化ＦＡＩ
Ｉ１．によって、エピタキシャル膜の成長が制限され、
結晶欠陥の少ないエピタキシャル膜が形成される。In this invention, a second oxide FAI formed between first silicon oxide films provided spaced apart on a silicon substrate.
I1. The epitaxial film growth is limited by
An epitaxial film with few crystal defects is formed.

〔実施例〕〔Example〕

以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第１図（ａ）〜（ｈ）はこの発明の一実施例な示す概要
図で、１はシリコン基板、２は第１の−７リコン酸化膜
、３は単結晶シリコンＯエピタキシャル膜、４は多結晶
シリコン膜、５は前記シリコン基板１の露出部、６は第
２のシリコン酸化膜である。1(a) to (h) are schematic diagrams showing one embodiment of the present invention, in which 1 is a silicon substrate, 2 is a first -7 silicon oxide film, 3 is a single crystal silicon O epitaxial film, and 4 is a A polycrystalline silicon film, 5 is an exposed portion of the silicon substrate 1, and 6 is a second silicon oxide film.

まず、第１図（ａ）に示すように、シリコン基板１の上
に第１のシリコン酸化膜２を熱酸化法で成長させたのち
パターン形成する。次に第１図（ｂ）に示すように、シ
リコン基板１の表面に熱酸化法によって第１のシリコン
酸化膜２より薄い第２のシリコン酸化膜６を形成する。First, as shown in FIG. 1(a), a first silicon oxide film 2 is grown on a silicon substrate 1 by thermal oxidation and then patterned. Next, as shown in FIG. 1(b), a second silicon oxide film 6, which is thinner than the first silicon oxide film 2, is formed on the surface of the silicon substrate 1 by thermal oxidation.

次いで第１図（ｃ）に示すように、第１および第２のシ
リコン酸化膜２および６の上面に多結晶シリコン膜ＪＹ
ＣＶＤ法により形成する。そして、この多結晶シリコン
膜４ｖ第１図（ｄ）に示すように、異方性エツチング（
ＲＩＥ）Ｌ−行って第１のシリコン酸化膜２の＠壁にそ
って残す。この多結１シリコン膜４ｔマスクとして第１
図（ｅ）　Ｋ示すように、ｍ２のシリコン酸化膜６のエ
ツチングを行うことＫより、シリコン基板１の露出部５
を得る。第２のシリコン酸化膜６のエツチング終了後、
第１図（ｆ）Ｋ示すように、多結晶シリコン膜４をエツ
チングによって除去する。そして、この状態のシリコン
基板１の裏出部５上に第１図（ｇ）Ｋ示すように、適切
な条件、たとえば適切な成長温度、成長速度、成長前ク
リーニングのもとで、単結晶シリコン・エピタキシャル
膜３′％：離間した第１のシリコン酸化膜２０間に亘る
よ５に選択的に成長させる。シリコン基板１の露出部５
からの単結晶シリコン・エピタキシャル膜３の成長が等
方向に起こるので、単結晶シリフン・エピタキシャル膜
３の成長がどの方向からも応力を受けることなく終了し
て、第１図（ｈ）に示すよ５に、単結晶シリコン・エピ
タキシャル膜３が選択的に得られる。Next, as shown in FIG. 1(c), a polycrystalline silicon film JY is formed on the upper surfaces of the first and second silicon oxide films 2 and 6.
Formed by CVD method. Then, as shown in FIG. 1(d), this polycrystalline silicon film 4v is anisotropically etched (
RIE) L- and leave it along the @ wall of the first silicon oxide film 2. As this polycrystalline silicon film 4t mask, the first
As shown in Figure (e), by etching the silicon oxide film 6 of m2, the exposed portion 5 of the silicon substrate 1 is
get. After completing the etching of the second silicon oxide film 6,
As shown in FIG. 1(f)K, the polycrystalline silicon film 4 is removed by etching. Then, as shown in FIG. 1(g)K, single crystal silicon is deposited on the underside 5 of the silicon substrate 1 in this state under appropriate conditions, such as appropriate growth temperature, growth rate, and pre-growth cleaning. -Epitaxial film 3'%: selectively grown in 5 layers spanning between the spaced apart first silicon oxide films 20. Exposed portion 5 of silicon substrate 1
Since the growth of the single-crystal silicon epitaxial film 3 occurs in the same direction, the growth of the single-crystal silicon epitaxial film 3 is completed without stress from any direction, as shown in FIG. 1(h). 5, a single crystal silicon epitaxial film 3 is selectively obtained.

なお、上記実施例では、第１および＠２のシリコン酸化
膜２および６を熱酸化法で形成しているが、ＣＶＤ法等
他のいかなる方法で形成してもよ％、１゜ 〔発明の効果〕 この発明は以上説明したとおり、第２のシリコン酸化膜
によってシリコン基板の露出部を狭め、この露出部上に
エピタキシャル膜を選択的に成長させているので、内部
に結晶欠陥の極めて少ない単結晶シリコン・エピタキシ
ャル膜が得られるという効果がある。In the above embodiment, the first and second silicon oxide films 2 and 6 are formed by a thermal oxidation method, but they may be formed by any other method such as a CVD method. Effect] As explained above, this invention narrows the exposed part of the silicon substrate with the second silicon oxide film and selectively grows an epitaxial film on this exposed part, so that a single layer with extremely few internal crystal defects is formed. This has the effect that a crystalline silicon epitaxial film can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第１図（１）〜（ｈ）はこの発明の一実施例の工程を示
す概要図、第２図（ａ）、　　（ｂ）は従来の単結晶シ
リコン・エピタキシャル膜の形成方法を示す概要図、第
３図は従来の単結晶シリコン・エピタキシャル膜の結晶
欠陥部を示す概要図である。 図において、１はシリコン基板、２は第１のシリコン酸
化膜、３は単結晶シリコン・エピタキシャル膜、４は多
結晶シリコン膜、５はシリコン基板の露出部命、６は第
２のシリコン酸化膜である。 なお、各図中の同一符号は同一または相当部分を示す。 代理人　大台　増雄　（外２８） 第１図 （ａ） 第１図 （ｄ） ？ 第１図 第２図 （ｂ）FIGS. 1(1) to (h) are schematic diagrams showing the steps of an embodiment of the present invention, and FIGS. 2(a) and (b) are schematic diagrams showing the conventional method of forming a single-crystal silicon epitaxial film. , FIG. 3 is a schematic diagram showing a crystal defect portion of a conventional single-crystal silicon epitaxial film. In the figure, 1 is a silicon substrate, 2 is a first silicon oxide film, 3 is a single crystal silicon epitaxial film, 4 is a polycrystalline silicon film, 5 is an exposed portion of the silicon substrate, and 6 is a second silicon oxide film. It is. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Odai (28) Figure 1 (a) Figure 1 (d) ? Figure 1 Figure 2 (b)

Claims (1)

【特許請求の範囲】[Claims] シリコン基板上に離間した第１のシリコン酸化膜を形成
する工程と、前記離間した第１のシリコン酸化膜間に前
記第１のシリコン酸化膜より薄い第２のシリコン酸化膜
を形成する工程と、この第２のシリコン酸化膜の中央部
に前記シリコン基板の露出部を形成する工程と、この露
出部上にエピタキシヤル膜を前記離間した第１のシリコ
ン酸化膜間に亘つて選択的に成長させる工程とを含むこ
とを特徴とするエピタキシャル膜の形成方法。forming spaced apart first silicon oxide films on a silicon substrate; forming a second silicon oxide film thinner than the first silicon oxide film between the spaced apart first silicon oxide films; forming an exposed portion of the silicon substrate in the center of the second silicon oxide film; and selectively growing an epitaxial film on the exposed portion between the spaced apart first silicon oxide films. A method for forming an epitaxial film, comprising the steps of:
JP7151485A 1985-04-02 1985-04-02 Formation of epitaxial film Pending JPS61228621A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7151485A JPS61228621A (en) 1985-04-02 1985-04-02 Formation of epitaxial film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7151485A JPS61228621A (en) 1985-04-02 1985-04-02 Formation of epitaxial film

Publications (1)

Publication Number Publication Date
JPS61228621A true JPS61228621A (en) 1986-10-11

Family

ID=13462892

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7151485A Pending JPS61228621A (en) 1985-04-02 1985-04-02 Formation of epitaxial film

Country Status (1)

Country Link
JP (1) JPS61228621A (en)

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