JPS61225823A - Semiconductor device - Google Patents

Abstract

PURPOSE:To dissipate the heat generated from pellets effectively and protect the pellets from distortion and cracking by a method wherein copper sheets are joined with an aluminum nitride plate utilizing eutectic of copper and oxy gen produced by heating the copper sheets. CONSTITUTION:Copper or copper alloy sheets 1, 1a and 1b are joined with a sintered AlN plate 2 to form a laminated substrate 3. Semiconductor pellets 12a and 12b are attached directly to the surfaces of the copper or copper alloy sheets of the substrate 3 by die-bonding. The content of oxygen in AlN powder must be 0.001-7wt%. With this method, heat radiation property is substantially improved. Moreover, as the substrate has a laminated structure of the sintered AlN plate, whose thermal expansion coefficient is similar to that of the pellet, and the copper or copper alloy sheets, the thermal expansion coefficient at the surface of the copper sheet of the substrate is made approx similar to that of the pellet attached to it by die-bonding.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor device, and more particularly to a semiconductor device having an improved substrate on which semiconductor pellets are die-dened.

[Technical background of the invention and its problems]

A conventional semiconductor device uses a substrate in which a copper sheet is placed in contact with at least one side of an alumina plate and bonded through a eutectic (CuzO) of copper and oxygen in alumina produced by heating. Direct die of large semiconductor pellets on the copper sheet of this substrate? A nodding structure is known.

However, since the alumina plate, which is one of the constituent materials of the substrate, has low thermal conductivity, it is difficult to use semiconductor pellets that have large power consumption losses, such as semiconductor pellets that are used for high frequencies and have large switching time power losses, forward power loss, and reverse blocking. When die-bonding high-voltage semiconductor pellets with large leakage current power loss, there was a problem in that the pellets could not sufficiently dissipate heat from the semiconductors. For this reason, thermal conductivity and mechanical Although it has been considered to use an aluminum nitride plate with high mechanical strength, there have been various problems in putting it into practical use as explained below.

The first problem is that when an aluminum nitride plate is used, it is not possible to join it as easily as a conventional alumina plate and a copper sheet. This is aluminum nitride (I%JL
Unlike alumina (At20.), it does not contain oxygen in the oxidized steel (Cu
This is due to the fact that it does not blend in with the layer of zO) at all. In addition, Mo
- Even if metallization such as Mn alloy, Mo, W, etc. is applied to an aluminum nitride plate, it has the disadvantage that it is difficult to adhere these metals.

The second problem is that the thermal conductivity of an aluminum nitride plate (usually made of a sintered aluminum nitride body) is significantly lower than its theoretical thermal conductivity. The aluminum nitride sintered body is manufactured by a pressureless sintering method or a hot pressing method. In the pressureless sintering method, compounds such as alkaline earth metal oxides or rare earth oxides are often added as sintering aids for the purpose of densification, while in the hot press method, aluminum nitride powder alone or as a sintering aid is added. It uses aluminum nitride powder to which a chemical has been added and is fired at high temperature and high pressure. However, with the hot press method, it is difficult to produce a sintered body with a complicated shape, and furthermore, it is unsuitable for mass production, resulting in high costs.

On the other hand, although the pressureless sintering method can solve the problems of the hot pressing method, the theoretical thermal conductivity of the aluminum nitride sintered body is at most 4 ow/m-, whereas the theoretical thermal conductivity of AtN is 320 w/m-. The current situation is that it is extremely low.

[Purpose of the invention]

The present invention aims to provide a semiconductor device that can effectively dissipate heat generated from semiconductor pellets and can prevent distortion and cracks in the semiconductor pellets.

[Summary of the invention]

The present invention is a laminate in which copper or copper alloy 7-metal is placed in contact with at least one side of an aluminum nitride plate and bonded to the aluminum nitride plate using a eutectic of copper and oxygen produced by heating. It is characterized by comprising a structured substrate and pellets die-bonded to the surface of a copper or copper alloy sheet of this substrate.

Examples of the steel sheet that is one of the constituent materials of the above-mentioned substrate include a tough pitch electrolytic steel sheet, and examples of the copper alloy sheet include Cu-St, Cu-AL-81, Cu-
A sheet of Ni, Cu-Fe, etc. can be used.

The aluminum nitride plate, which is the other constituent material of the substrate, is mainly composed of aluminum nitride powder containing 0.001 to 7% by weight of oxygen, and at least one powder selected from rare earth element powder and rare earth element-containing substance powder. It is desirable to use a sintered body obtained by mixing 0.01 to 15% by weight of rare earth elements and sintering the mixture and having a high thermal conductivity with a total oxygen content in the range of 0.01 to 20% by weight. The reason why such an aluminum nitride sintered body (AtN sintered body) exhibits excellent high thermal conductivity is presumed to be due to the structure described below.

However, in the following explanation, a case will be described in which a rare earth element is used as a sintering aid.

When an oxygen-containing AtN substrate material doped with rare earth element powder is shaped and sintered, the rare earth element reacts with the oxygen (usually present as aluminum oxide) in the AtN powder. Through such a reaction, the composition formula 3 Ln2O3,5u203
A garnet structure compound phase (hereinafter abbreviated as garnet phase) expressed in the form of (Ln: rare earth element) is generated at the grain boundaries of AΔ, contributes to the sintering of the AtN particles, and fixes oxygen. In this case, if the amount of oxygen (mainly the amount of oxygen in the AtN powder) increases, there will be oxygen that is not taken in as the garnet phase.

Therefore, oxygen diffuses into the AtN particles as a solid solution. Thermal conductivity of insulators is dominated by the diffusion of elastic waves (phonons). Therefore, A containing AtN particles in which oxygen is diffused as a solid solution
In the tN sintered body, phonons are scattered in the solid solution diffused region, resulting in a decrease in thermal conductivity. Because of this,
The amount of oxygen in the powder is controlled in the range of 0.001 to 7% by weight in consideration of the amount of rare earth element powder added, and the amount is suppressed to the amount constituting the garnet phase and fixed.

This also prevents solid solution diffusion of oxygen into AtN particles,
Phonon scattering is reduced and thermal conductivity is improved.

It should be noted that when a perovskite structure compound phase (hereinafter abbreviated as perovskite phase) represented by the compositional formula LnAt03 (Ln: rare earth element), which is different from the garnet phase, is formed at the grain boundaries of AtN, Al. Such perovskite phase also exhibits the same effect as the garnet phase.

As mentioned above, the oxygen in the A& powder contributes to the sinterability of the K AtN powder. The amount of oxygen in the AtN powder needs to be 0.001 to 7% by weight, preferably 0.05 to 4% by weight, and more preferably 0.1 to 4% by weight.
There are three people in charge of weight. The reason for limiting the amount of oxygen in the Ic AtN powder is that if the amount is less than 0.001 weight, sufficient improvement in sinterability cannot be achieved.
It becomes difficult to obtain a sintered body. On the other hand, if the amount of oxygen exceeds 7% by weight, oxygen that is not fixed at AtN grain boundaries will exist, or if a large amount of rare earth elements are added, a large amount of garnet phase will cover the grains. , the scattering of phonons in that part cannot be ignored, making it difficult to obtain a sintered AtN substrate with high thermal conductivity.

The rare earth element powder and the rare earth element-containing substance powder act as a sintering aid. Examples of rare earth elements include Y,
Examples include La, Ce*Pr, Nd, and Sm. Y is particularly suitable as the rare earth element. Yttrium oxide (y2o) is suitable as the rare earth element-containing substance. These rare earth element powders,
The rare earth element-containing substance powder may be used alone or in a mixture of two or more types. The mixing amount for such rare earth element powder and rare earth element-containing substance powder is 0.01
It is necessary to make it ~20% by weight, preferably 0.14~
11.3% by weight (more preferable range is 0.28-8.5
Weight%. The reason for this is that if the amount of rare earth element powder etc. mixed is less than 0.01% by weight, the sinterability cannot be sufficiently improved and it becomes difficult to obtain a high-density Ni-N substrate sintered body.

On the other hand, if the amount of rare earth element powder etc. exceeds 20% by weight, the relative amount of AtN decreases, which not only impairs the inherent properties of the AtN substrate sintered body, such as heat resistance and high strength, but also reduces thermal conductivity. descend. When mixing these rare earth element powders with oxygen-containing AtN powder, if the total amount of oxygen is large within the above range, the above range (0.01
It is desirable to increase the amount within the range of 20 to 20 weight range). Further, when employing the pressureless sintering method, it is desirable that the content of the rare earth element powder etc. be in the range of 0.1 to 15% by weight.

The reason for limiting the total oxygen content in the AtN sintered body to the above range is to limit the amount to less than 0.01% by weight. This makes it difficult to obtain an ALN sintered body with high thermal conductivity.

Next, the pressureless sintering method and hot press sintering method for obtaining the above AtN tFifL sintered body will be briefly explained.

First, a predetermined amount of at least one selected from rare earth element powder and rare earth element-containing substance powder is added to AtN powder containing oxygen in a range of 0.001 to 7 weight range, and mixed using a goal mill or the like. Subsequently, a binder is added to this mixed powder, cross-wire granulation and sizing are performed, and molding is performed using a mold, isostatic press, or sheet molding. Subsequently, the molded body is heated to around 700° C. in a N2 gas stream to remove the binder.

Next, the molded body is set in a graphite container or an AtN container, and N
Pressureless sintering is performed at 1600 to 1850°C in a two-gas atmosphere. At this time, a relatively low temperature (1000 to 13
At even higher temperatures (160°C), the mononet phase or perogeskite phase described above is generated at the grain boundaries of AtN particles.
0 to 1850°C), the -net phase and irodescite phase are melted, and pressureless sintering is performed by the liquid phase sintering mechanism. On the other hand, in the case of the hot breath sintering method, the raw materials mixed in the sol mill or the like are heated at 1600 to 1800°C.

The thermal conductivity of the AtN sintered body described above is 65 to 115 w/
m-x, and the thermal conductivity of At203 sintered body, which has been widely used in the past, was at most 40'w/m-, but the thermal conductivity was 1.
It has 5 to 3 times higher thermal conductivity.

On the other hand, it is tough compared to the above-mentioned AM sintered body.

Sheets of copper or copper alloy such as electrolytic copper are placed in contact with each other and heated to a predetermined temperature (for example, around 1075°C) in a nitrogen gas atmosphere.
By heat-treating the AtN sintered body, 0.0
Oxygen and copper containing 1 to 20% by weight undergo a eutectic reaction to form Cuz
By generating O, the Cu 20 layer participates in bonding the AtN sintered body and the copper sheet, etc., and then cooling it to room temperature, thereby obtaining a laminated structure substrate with high bonding strength.

Therefore, the present invention uses a substrate with a laminated structure in which a sheet of copper or copper alloy is bonded to the above-mentioned highly thermally conductive AtN sintered body,
By directly guiding semiconductor pellets onto the surface of the copper or copper alloy sheet of this substrate, At203
The heat dissipation characteristics can be significantly improved compared to conventional semiconductor devices in which the sintered body is used as a constituent material of the substrate and the semiconductor is die-dended.

Furthermore, since the present invention uses a substrate having a laminated structure of a juN sintered body and a copper or copper alloy sheet, which has a thermal expansion coefficient similar to that of a semiconductor pellet (silicon), the thermal expansion coefficient on the surface of the copper sheet of the substrate is similar to that of a semiconductor pellet (silicon). The coefficient of thermal expansion is close to that of the semiconductor pellet to be guided. As a result, it is possible to prevent distortion and cracking of the semiconductor pellet due to thermal shock during heating and use (when the semiconductor (when heat is generated from the pellet) occurs), and it is possible to prevent semiconductor devices equipped with large semiconductor pellets. In this case, in order to make the coefficient of thermal expansion at the surface of the copper or copper alloy sheet of the substrate close to the coefficient of thermal expansion of the semiconductor pellet, the thickness of the sheet is adjusted to the A to which it is bonded.
It is desirable to make it thinner than the tN sintered body. in particular,
When the thickness of the AtN sintered body is 0.4 to 0.8 mm, the thickness of the copper or copper alloy sheet should be in the range of 40 to 70 times the thickness of the AtN sintered body. is preferred.

[Embodiments of the invention]

Below, examples of manufacturing AtN sintered bodies used in the present invention, AtN
Examples of manufacturing a substrate having a sintered body and evaluation examples of a semiconductor device having semiconductor pellets mounted on the substrate will be described in detail.

<Production Examples 1 to 5> AtN powder containing 3% by weight of oxygen with an average particle size of 0.9 μm and IJum (Y2O2) with an average particle size of 1 μm
) After adding 0.1% by weight, 0.5% by weight, 1% by weight*, 3% by weight and 5% by weight of the powder, they were ground using a sol mill for 10 hours and mixed to give a powder with a weight of 200g. Various mixed powders were prepared. Next, 7 parts of paraffin were added to each of these mixed powders and granulated to prepare 5 types of raw materials.These raw materials were then cold-open molded under a pressure of 300 kg/cm2 to obtain a size of 63cm x 29+w+x0. 6'3
A plate-like body of 5 gourds was produced. Next, these plate-shaped bodies were heated to 600°C in a nitrogen gas atmosphere, held for 10 hours to degrease, and then placed in an AtN container and subjected to atmospheric pressure sintering at 1800°C for 2 hours in a nitrogen gas atmosphere. 5 types of A
A tN sintered body was manufactured.

The density of each obtained A-tN sintered body was measured, and the thermal conductivity at room temperature was also measured by a laser flash method.

The results are shown in Table 1 below.

In addition, Table 1 shows materials manufactured by the same method as described above, except that raw materials were used in which 7 parts by weight of arm rough-in were added to the AtN powder itself containing 3% by weight of oxygen without adding yttrium oxide. The AAN sintered body was also shown as Comparative Sample 1, and the structure of each of the AtN sintered bodies of Samples 1 to 5 was examined by X-ray diffraction. As a result, an AtN phase, an f-net phase, and a slight nitride phase were detected in each AtN sintered body. However, in the grade sintered compacts in which a large amount of Y2O was added, the nitride phase decreased and the garnet phase increased.

<Manufacturing Examples 6 to 10> As shown in Table 2 below, there are five types of AtN powders with different average particle sizes and oxygen contents, and yttrium oxide powders with an average particle size of 1 μm and different amounts added to the AtN powders. Mixed powder composition? - Using Lumil, 10 hour grinding and mixing were performed to prepare 5 types of mixed powders each weighing 200y.

Next, 7 weight ranges of paraffin were added to each of these mixed powders and granulated to prepare 5 types of raw materials, and then these raw materials were cold-formed at a pressure of 300 kg/α2 to a size of 6.
A plate-shaped body of 3 mm×29 m×O, 635 mt was prepared. Next, these plate-shaped bodies were subjected to atmospheric pressure sintering under the temperature conditions shown in Table 2 in a nitrogen gas atmosphere to produce five types of AtN sintered bodies.

The density of each obtained AtN sintered body was measured, and the thermal conductivity was also measured by the same method as in Production Example 1. The results are shown in Table 2. Note that in Table 2, the average particle size is 0.
Comparative sample 2 is an AtN sintered body produced in the same manner as described above, except that a mixed powder of AtN powder containing 20 parts by weight of 9 μm oxygen and 10 parts by weight of yttrium oxide was used.

The structures of the AtN sintered sea urchins of Samples 6 to 10 were examined by X-ray diffraction. As a result, A of sample 6.7
In the tN substrate sintered body, a ktN phase, a small amount of a -net phase, and a small amount of an oxynitride phase were detected. At of samples 8 to 10
In the N sintered body, ktN phase, garnet phase and oxynitride were detected. In addition, among the ktN sintered bodies of samples 8 to 10, in sample 10, where the amount of oxygen in the AtN powder was large, a large amount of garnet phase was detected, and a large amount of K and oxynitride phases were also detected. On the other hand, AtN of comparative sample 2
A large amount of oxides were detected in the sintered body.

Production Examples 11 to 17> As shown in Table 3 below, AtN powder with an average particle size of 1 μm containing 1 weight percent of oxygen, Gd2O powder, Dy2O3 powder, VL&205 powder, and Ce2O with an average particle size of 1 μm.

powder, Pr2O3 powder, Nd2O3 powder and Srn
A mixed powder composition prepared by adding 3 parts by weight of each of the 20s powders was milled and mixed using a goal mill for 10 hours until the weight reached 200s. Seven types of mixed powders of F were prepared. Subsequently, 71 liters of paraffin was added to each of these mixed powders and granulated to prepare seven types of raw materials. Next, seven types of AtN sintered bodies were manufactured using these raw materials in the same manner as in Manufacturing Example 1.

The density of each obtained AtN sintered body was measured, and the thermal conductivity was also measured by the same method as in Production Example 1. The results are also listed in Table 3.

As is clear from Tables 1 to 3 above, Samples 1 to 1
It was confirmed that the AtN sintered body of No. 7 has high density and extremely high thermal conductivity, and can be used as an insulating plate for semiconductor devices with good heat dissipation characteristics.

<Substrate Manufacturing Example> First, five tough pitch electrolytic steel patterns 13 to 1e having a thickness of 0.4 mm as shown in FIG. 1 and a tough pitch electrolytic copper plate 1 having a thickness of 0.3 mm as shown in FIG. 2 were prepared. Next, the AtN sintered body (thickness 0.6
35■) Electrolytic copper as shown in Figure 1 on the top surface of 2/Mother turn 1&~1
6 were arranged at intervals of about 1.5 circles, and the electrolytic steel plate 1 shown in FIG. 2 was stacked on the bottom surface of the AtN sintered body 2, and then heated at 1075° C. for 10 minutes in a nitrogen gas atmosphere. After that, it is cooled to about room temperature and the electrolytic steel/mother turn 1 is placed on the top surface of the AtN sintered body 2.
A to le, a substrate 3 having a laminated structure with electrolytic copper plates 1 bonded to the bottom surfaces thereof was prepared (as shown in FIG. 3).

The obtained substrate 3 was cut out to prepare a rectangular test piece with a width of 25 mm and a length of 10 mm having electrolytic copper sheets on the upper and lower surfaces (in this case, the thickness of the upper copper sheet was 0.3 + W). Also, instead of the AtN sintered body, a thickness of 0.635 m was used.
A substrate (conventional example) was prepared in substantially the same manner as in the above substrate manufacturing example, except that an At203 sintered body of m was used, and a test piece B was prepared having the same dimensions as the test piece A cut out from the substrate in the same manner. These test pieces A and B were heated in the range from room temperature to 350°C, and the amount of dimensional change in the length direction (10 cod sides at room temperature 25°C) of the copper sheet surface at each temperature was measured. The characteristic diagram shown in Fig. 4 was obtained. In Fig. 4, A is the characteristic line of the test piece of the present invention, and B is the characteristic line of the conventional test piece B.
The characteristic line C shows the characteristic line of the pure copper plate. As is clear from FIG. 4, it can be seen that both the present invention and the conventional test pieces A and B change almost linearly. In addition, by dividing the difference in dimensional change between 100°C and the absolute temperature difference between 100 and 200°C in Figure 4 by the room temperature dimension (10■), and further dividing the obtained value by the absolute temperature difference of 100°C, Expansion coefficient [α
] was sought. As a result, the coefficient of thermal expansion (α) of the conventional test piece B using an alumina sintered body was approximately 7×10=°C, whereas the thermal expansion coefficient (α) of the test piece A of the present invention using an AtN sintered body
The coefficient of thermal expansion (α) was approximately 5.5×10-'°C-1. As mentioned above, the coefficient of thermal expansion of a semiconductor pellet made of silicon that can be directly injected onto a substrate is approximately 4.5 x 10'' - 1 to 6 x 10 ℃.
Therefore, it can be seen that even if a large semiconductor pellet is directly die-bound onto a substrate using the AtN sintered body of the present invention, cracks can be prevented from occurring in the semiconductor pellet.

Furthermore, using the present invention and conventional test pieces A and B, A
The bonding strength between the tN sintered body and the copper sheet and the bonding strength between the At203 sintered body and the copper sheet were evaluated by husband and wife. As shown in FIG. 5, the bonding strength is determined by the diameter of 1.5 mm at the end of the copper sheet 5 of a test piece having copper sheets 515' on both sides of the sintered body 40.
Evaluation was made by soldering a 5+m+ metal rod and measuring the strength when the copper sheet 5 was peeled off from the sintered body 4 by pulling the metal rod σ directly above it. As a result, the test piece A of the present invention showed 7 to 9 Yu/cr! 12, the conventional test piece B has a bonding strength of 13 to 15 kl? /ctn'', and both values were found to be of no practical problem.

<Evaluation example> 4 turns 1 m of electroless copper on the substrate 3 shown in Figure 3 mentioned above.
, Ib and a solder layer 11& having a relatively high melting point.

11b, the substrate 3 is placed on a hot plate and heated to a temperature higher than the melting point of the solder in an inert gas atmosphere to form a solder layer 11h.
, Ilb was melted. Next, semiconductor pellets) 12
Solder layers 11a and 11 made by melting a e 1 j b
Semiconductor pellets 12*,
12b, and soldered without entraining air bubbles. Subsequently, the substrate 3 was removed from the hot plate, cooled to room temperature, and semiconductor pellets were placed on the substrate 3 (12 m).

12b (as shown in Figure 6(,)).

Next, the groove part [not shown] of one of the die-bound semiconductor pellets 12m, the rectangular electrolytic copper 14' turn 1c of the substrate 3, and the electrolytic copper ivy turn 1b to which the other Benz' F12b was guided are attached. At wires 13 were attached to each of the strip-shaped portions by ultrasonic bending. In addition, the pad portion of another semiconductor pellet 12b (
(not shown) and the strip-shaped electrolytic copper mother turn ld of the substrate 3.

At wires 13 were dented in the same manner as in 1@ (as shown in FIG. 6(b)).

Next, the wire-ended board 3 is coated with copper paste 1.
4 with a solder sheet 15 interposed therebetween, the tips of the IJ-determined terminals 17 having the solder layer 16 attached in advance were fixed to each gloss turn Z a -1e on the upper surface of the substrate 3 using a jig or the like. Note that these solder sheets 15. The solder layer 16 is
Both are formed from a solder material having a lower melting point than the solder layers 11* and 11bK interposed between the substrate 3 and the semiconductor pellets 12* and 12b. Subsequently, the solder sheet 15. After heating the solder layer 16 until it is sufficiently melted, the solder layer 16 is cooled to room temperature and the back surface of the substrate 3 is bonded to the copper paste 14.
In addition, a plurality of lead terminals 17 were bonded to the upper surface of the substrate 3 to form a flow structure 18 (as shown in FIG. 6(c)).

Next, the epoxy resin frame 1 is placed on the top surface of the reflow structure 18.
9 was adhered via a silicone resin adhesive layer 20. Next, a thermosetting silicone potting agent is injected into the upper opening of the epoxy resin frame 19 and cured, and then a thermoplastic epoxy resin is injected and cured, and then sealed with a silicone potting layer 21 and a thermoplastic epoxy resin layer 22. A semiconductor device 23 was manufactured (as shown in FIG. 6(d)).

Therefore, the semiconductor device manufactured by the above-mentioned process and the AA20. A semiconductor device manufactured in the same manner as the above process using a substrate having a sintered body (
[Conventional example] Regarding K, check the thermal resistance difference (Rth). As a result, in the semiconductor device of the present invention, Rth=0.41°C/
W, Rth=0.24° C./W in the conventional semiconductor device. By replacing this with the collector power consumption (Pc) that can be consumed in terms of an infinite heat sink, the junction temperature T
Calculating at the guaranteed level of j = 150°C, the semiconductor device of the present invention has Pc = 300W, and the conventional semiconductor device has Pc = 300W.
= 520W, and an improvement in Pc of about 170 was recognized.

In addition, in the above example, AtN of sample 14 in Table 3
A substrate was prepared using a sintered body, and a semiconductor pellet was subjected to die f4 ringing etc. to manufacture a semiconductor device. ), it was possible to obtain a substrate and a semiconductor device having the same effects as in the example.

〔Effect of the invention〕

As detailed above, according to the present invention, heat exchanged from the semiconductor pellet can be efficiently dissipated by the substrate on which the pellet is guided, and the occurrence of distortion, cracking, and cracking in the semiconductor pellet can be prevented. As a result, it is possible to load semiconductor pellets with large dimensions, and it is also possible to provide a high-performance and highly reliable semiconductor device.

[Brief explanation of the drawing]

Figures 1 and 2 are plan views of the copper sheet used in the production of the substrate of the present invention, Figure 3 is a plan view of the substrate used in the present invention, and (B) is a plan view of the copper sheet used in the production of the substrate of the present invention. - a cross-sectional view along the X-ray;
Fig. 4 is a characteristic diagram showing the amount of dimensional change with respect to temperature fluctuation in laminated structure substrates used in the present invention and conventional semiconductor devices, and Fig. 5 is a test state of the bonding strength of copper sheets in the present invention and conventional substrates. 6(a) - sectional view showing
(d) is a diagram showing the manufacturing process of the semiconductor device of the present invention, (a) and (c) are cross-sectional views, and (b) is a plan view.
The figure (,) is a partially cutaway front view. 1a ~ 1st phrase...Tough pitch electrolytic copper tsukturn, I...
・Tough vinyl, electrolytic copper plate, 2... AtN sintered body, 3...
・Substrate, 12h, 12b...Semiconductor pellet, 13・
...AA wire, 14...Copper paste, 17...IJ
-)' terminal, 18... reflow structure, 19... epoxy resin frame, 21... silicone potting layer,
22... Epoxy resin layer, 23... Semiconductor device. Fig. 1 Fig. 2 ll Fig. 5↑ 5' Fig. 6 Fig. 6 Mr. Michibe Uga, Director General of the Japan Patent Office, Date of Showa 1, Indication of Case Patent Application No. 1983-66911 2, Title of Invention - Semiconductor Device 3, Relationship with the case of the person making the amendment Patent applicant (307) Toshiba Corporation 4, Agent June 25, 1985 7, Liang 29, lines 11-12 of the specification of contents of the amendment: Nika 1 (Note: Correct the text "same figure (e)" to "same figure (d)."

Claims (5)

[Claims] (1) A substrate with a laminated structure in which a sheet of copper or copper alloy is placed in contact with at least one side of an aluminum nitride plate and bonded to the aluminum nitride plate using the eutectic of copper and oxygen produced by heating. and a semiconductor pellet die-bonded to the surface of a copper or copper alloy sheet of the substrate. (2) The semiconductor device according to claim 1, wherein the copper or copper alloy sheet is thinner than the aluminum nitride plate. (3) The aluminum nitride plate has aluminum nitride powder containing 0.001 to 7% by weight of oxygen as a main component, and at least one selected from rare earth element powder and rare earth element-containing substance powder to 0.01% by weight in terms of rare earth element. A sintered body made by mixing ~15% by weight and sintering, with a total oxygen content of 0.0
2. The semiconductor device according to claim 1, wherein the semiconductor device contains 1 to 20% by weight. (4) The semiconductor device according to claim 3, wherein yttrium is used as the rare earth element. (5) The semiconductor device according to claim 3, wherein yttrium oxide is used as the rare earth element-containing substance.