JPS61224469A - Avalanche photodiode - Google Patents
Avalanche photodiodeInfo
- Publication number
- JPS61224469A JPS61224469A JP60065637A JP6563785A JPS61224469A JP S61224469 A JPS61224469 A JP S61224469A JP 60065637 A JP60065637 A JP 60065637A JP 6563785 A JP6563785 A JP 6563785A JP S61224469 A JPS61224469 A JP S61224469A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thickness
- light absorption
- substrate
- superlattice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000031700 light absorption Effects 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 150000001875 compounds Chemical class 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 11
- 238000010030 laminating Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 15
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 4
- 238000001370 static light scattering Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
Abstract
Description
【発明の詳細な説明】
〔概要〕
光通信に適する波長１．３μｍ帯程度の光信号を受ける
アバランシ・ホトダイオードにおいて、光吸収層を歪層
超格子構造になし、キャリア増倍層をシリコンにするこ
とにより、
出力信号の低雑音化を図ったものである。[Detailed Description of the Invention] [Summary] In an avalanche photodiode that receives optical signals in the 1.3 μm wavelength band suitable for optical communication, the light absorption layer has a strained layer superlattice structure and the carrier multiplication layer is made of silicon. This is intended to reduce the noise of the output signal.
本発明は（光通信に適する波長１．３μｍ帯程度の光信
号を受けるアバランシ・ホトダイオード（ＡＰＤ）の構
成に関す。The present invention relates to the structure of an avalanche photodiode (APD) that receives an optical signal with a wavelength of about 1.3 μm, which is suitable for optical communication.
ＡＰＤは、高感度や高速応答の特性を有することから光
通信など・の光信号受信素子として多用されるようにな
ってきた。Since APDs have characteristics of high sensitivity and fast response, they have come to be widely used as optical signal receiving elements in optical communications and the like.
一方、長距離光通信においては、光ファイバの特性から
例えば１．３μｍ帯と言った具合に光信号の波長に制約
があると共に使用されるＡＰＤには出力信号の低雑音化
が望まれる。On the other hand, in long-distance optical communications, there are restrictions on the wavelength of optical signals, such as the 1.3 μm band, due to the characteristics of optical fibers, and low noise output signals are desired for the APDs used.
第３図は波長１．３μｍ帯の光信号を受ける従来のＡＰ
Ｄ例の側断面図である。Figure 3 shows a conventional AP that receives optical signals in the 1.3 μm wavelength band.
It is a side sectional view of example D.
同図において、１はｎ＋型インジウム燐（ＩｎＰ）の基
板、２はｎ型ＩｎＰのバッファ層（厚さζ０．５μｍ）
、３はインジウムガリウム砒素（ＩｎＧａＡｓ）の光吸
収層（厚さ； １．５μｌ１１）、４はｎ型ＩｎＰのキ
ャリア増倍層（厚さ＃３μｌｌ１）、５はｐ＋型ＩｎＰ
のコンタクト層（厚さｑ０．５８ｍ）で、２〜５は基板
１上に順次エピタキシャル成長されてなっている。In the figure, 1 is an n+ type indium phosphide (InP) substrate, and 2 is an n type InP buffer layer (thickness ζ 0.5 μm).
, 3 is an indium gallium arsenide (InGaAs) light absorption layer (thickness: 1.5 μl11), 4 is an n-type InP carrier multiplication layer (thickness #3 μl1), and 5 is a p + type InP.
Contact layers 2 to 5 (thickness q0.58 m) are successively epitaxially grown on the substrate 1.
また、６と７はコンタクト層５と基板１のそれぞれにオ
ーミック接触する金属の電極である。Moreover, 6 and 7 are metal electrodes that make ohmic contact with the contact layer 5 and the substrate 1, respectively.
このＡＰＤは、電極６と７との間に電極６を負側にした
電圧が印加された状態で図上上方から光が入射すると、
光吸収層３で発生したキャリアが、コンタクト層５との
界面にＰ−Ｎ接合を形成しているキャリア増倍層４で増
倍されて、高感度の光−電気変換機能を示す。In this APD, when light enters from above in the figure with a voltage applied between electrodes 6 and 7 with electrode 6 on the negative side,
Carriers generated in the light absorption layer 3 are multiplied by the carrier multiplication layer 4 forming a PN junction at the interface with the contact layer 5, thereby exhibiting a highly sensitive photo-electrical conversion function.
この際、電気的出力信号には必然的に雑音が含まれるが
、キャリア増倍層４の材料がこの雑音レベルを左右する
要因の一つになっている。At this time, the electrical output signal inevitably contains noise, and the material of the carrier multiplication layer 4 is one of the factors that influences this noise level.
そして、上記ＡＰＤにおいては、受ける光信号の波長が
１．３μｍ帯であることから光吸収層３の材料がＩ ｎ
ＧａＡｓに定まり、それと格子整合させる必要性からキ
ャリア増倍層４の材料がｒｎＰになっている。In the above APD, since the wavelength of the received optical signal is in the 1.3 μm band, the material of the light absorption layer 3 is In
The carrier multiplication layer 4 is made of rnP because of the need for lattice matching with GaAs.
上記雑音レベルはイオン化率比の大きい材料である程小
さくなると言われ、ＩｎＰよりイオン化率比の大きい材
料にはシリコン（Ｓｉ）がある。It is said that the noise level becomes smaller as the material has a higher ionization rate ratio, and silicon (Si) is a material with a higher ionization rate ratio than InP.
ちなみに、光信号の波長が１μｍより短い場合に使用さ
れ光吸収層とキャリア増倍層の材料がＳｉであるＡＰＤ
の、増倍率１０倍における過剰雑音指数（Ｅｘｃｅｓｓ
Ｎｏ１ｓｅ Ｆａｃｔｏｒ） Ｆは２．５〜２．８で
ある。By the way, APD is used when the wavelength of the optical signal is shorter than 1 μm and the material of the light absorption layer and carrier multiplication layer is Si.
Excess noise figure at a multiplication factor of 10
No.1se Factor) F is 2.5 to 2.8.
これと比較すると上記ＡＰＤは、同様のＦが約５となり
雑音レベルが高い問題がある。Compared to this, the above-mentioned APD has a similar F value of about 5, which has a problem of high noise level.
第１図は本発明によるＡＰＤ実施例の側断面図である。 FIG. 1 is a side cross-sectional view of an APD embodiment according to the present invention.
上記問題点は、同図に示す如（、光吸収層１３がｍ−ｖ
族化合物半導体の歪層超格子構造（ＳＬＳ、５ｔｒａｉ
ｎｅｄ Ｌａｙｅｒ ５ｕｐｅｒ−１ａｔｔｉｃｅ）で
なり、キャリア増倍層１２がＳｉでなる本発明のＡＰＤ
によって解決される。The above problem is solved as shown in the figure (when the light absorption layer 13 is m-v
Strained layer superlattice structure (SLS, 5trai) of compound semiconductors
APD of the present invention, in which the carrier multiplication layer 12 is made of Si.
solved by.
従来、光吸収層とキャリア増倍層の間で格子整合させる
必要があったのは、光吸収層で発生したキャリアがキャ
リア増倍層に移行するのに支障がないように、格子欠陥
の発生を抑えるためである。Conventionally, it was necessary to achieve lattice matching between the light absorption layer and the carrier multiplication layer in order to avoid the occurrence of lattice defects so that carriers generated in the light absorption layer could migrate to the carrier multiplication layer. This is to suppress the
本発明においては、光吸収層１３に波長１．３μｍ帯の
光を吸収するｍ−ｖ族化合物半導体を使用しながらこれ
をＳＬＳにして、格子定数がより小さなＳｉでなるキャ
リア増倍層１２との接合に格子欠陥が生じないようにし
ている。In the present invention, while an m-v group compound semiconductor that absorbs light in the wavelength band of 1.3 μm is used for the light absorption layer 13, this is made into SLS, and the carrier multiplication layer 12 is formed of Si having a smaller lattice constant. This prevents lattice defects from occurring in the bonding.
従つて本ＡＰＤは、波長１．３μｍ帯の光信号を受ける
ＡＰＤとして正常に作動し、然もキャリア増倍層１２が
イオン化率比の大きなＳｉであることから、増倍率１０
倍における過剰雑音指数Ｆが従来例の凡そ１／２と言っ
た具合に雑音レベルが低くなる。Therefore, this APD operates normally as an APD that receives optical signals in the wavelength band of 1.3 μm, and since the carrier multiplication layer 12 is made of Si with a high ionization rate ratio, the multiplication factor is 10.
The noise level is reduced to such a degree that the excess noise figure F at double the number is approximately 1/2 that of the conventional example.
以下第１図と共に光吸収層１３の詳細を示す第２図の部
分側断面図を用いて実施例を説明する。An embodiment will be described below with reference to FIG. 1 as well as a partial side sectional view of FIG. 2 showing details of the light absorption layer 13.
第１図において、１１はｐ＋型Ｓｉの基板、１２はｎ型
Ｓｉのキャリア増倍層（厚さ′４３μｎ＋）、１３は詳
細を第２図に示す光吸収層（厚さ＃１．５μｍ）、１４
はｎ型１ｎＰのコンタクト層（厚さ＃０．５μｍ）で、
１２〜１４は基板１１上に順次エピタキシャル成長され
てなっている。また、１５と１６はコンタクト層１４と
基板１１のそれぞれにオーミンク接触する金属の電極で
ある。In FIG. 1, 11 is a p+ type Si substrate, 12 is an n-type Si carrier multiplication layer (thickness 43 μm+), and 13 is a light absorption layer (thickness #1.5 μm) whose details are shown in FIG. 2. , 14
is an n-type 1nP contact layer (thickness #0.5 μm),
12 to 14 are successively epitaxially grown on the substrate 11. Further, 15 and 16 are metal electrodes that are in ohmink contact with the contact layer 14 and the substrate 11, respectively.
光吸収層１３はＳＬＳをなし第２図に示す如く、ノンド
ープＩｎｘＧａ、、ＸＡｓ （Ｘ ＃０．４５）で厚さ
約３００人の第一の半導体層１３ａとノンドープＩｎＰ
で厚さ約３００人の第二の半導体層１３ｂとを交互に各
１３層、合計２６層をエピタキシャル成長により積層し
て厚さを約１．５μｍにしたものである。この積層成長
は、例えば、有機金属エピタキシャル成長法（ＭＯ−Ｃ
ＶＤ法）、分子線エピタキシャル成長法（ＭＢＥ法）、
気相エピタキシャル成長法（Ｖ Ｐ Ｅ法）などにより
行うことが可能である。また半導体層１３ａ 、 １３
ｂの積層数は上記２６層に限定されず２０〜３０層程度
であれば良い。The light absorption layer 13 is made of SLS, and as shown in FIG. 2, it is made of non-doped InxGa, XAs (X #0.45) and has a thickness of approximately 300 nm, and a first semiconductor layer 13a and non-doped InP.
The second semiconductor layer 13b having a thickness of approximately 300 layers is alternately laminated by 13 layers each, a total of 26 layers, to a thickness of approximately 1.5 μm. This layered growth is carried out by, for example, metal organic epitaxial growth (MO-C).
VD method), molecular beam epitaxial growth method (MBE method),
This can be performed by a vapor phase epitaxial growth method (VPE method) or the like. Moreover, the semiconductor layers 13a, 13
The number of laminated layers b is not limited to the above 26 layers, but may be about 20 to 30 layers.
そして、この光吸収層１３は、波長１．３μｍ帯の光を
吸収して十分なキャリアを発生させる。The light absorption layer 13 absorbs light in the wavelength band of 1.3 μm and generates sufficient carriers.
また、上記１ｎＧａＡｓとＳｉとの間には格子定数に約
６％のずれがあるが、光吸収層１３をかく構成すること
によりＳｔのキャリア増倍層１２との格子不整合は緩和
されて格子欠陥の発生が抑えられている。Furthermore, although there is a difference of about 6% in lattice constant between the above-mentioned 1nGaAs and Si, by configuring the light absorption layer 13 in this way, the lattice mismatch with the carrier multiplication layer 12 of St is alleviated. The occurrence of defects is suppressed.
このＡＰＤは、電極１５と１６との間に電極１５を正側
にした電圧が印加されている状態で図上上方から光が入
射すると、光吸収層１３で発生したキャリアが、基板１
１との界面にＰ−Ｎ接合を形成しているキャリア増倍層
１２で増倍されて、従来例と同様に高感度の光−電気変
換機能を示す。然も光増倍層１２がＳｔであることから
、先に説明した如く雑音レベルが従来例より低くなって
いる。In this APD, when light is incident from above in the figure with a voltage applied between electrodes 15 and 16 with electrode 15 on the positive side, carriers generated in the light absorption layer 13 are transferred to the substrate 1.
The carriers are multiplied by the carrier multiplication layer 12 which forms a PN junction at the interface with 1, and exhibits a highly sensitive photo-electrical conversion function as in the conventional example. However, since the optical multiplier layer 12 is made of St, the noise level is lower than that of the conventional example, as described above.
以上説明したように、本発明の構成によれば、光通信に
適する波長１．３μｍ帯程度の光信号を受けるＡＰＤに
おいて、出力信号の雑音低減化が可能になり、光信号受
信素子として従来より優れたＡＰＤの提供を可能にさせ
る効果がある。As explained above, according to the configuration of the present invention, it is possible to reduce the noise of the output signal in an APD that receives an optical signal with a wavelength of about 1.3 μm, which is suitable for optical communication, and it is possible to reduce the noise of the output signal. This has the effect of making it possible to provide excellent APD.
第１図は本発明によるＡＰＤ実施例の側断面図、第２図
はその光吸収層の詳細を示す部分側断面図、
第３図は従来のＡＰＤ例の側断面図、である。
図において、
１．１１は基板、
２はバッファ層、
３．１３は光吸収層、
４．１２はキャリア増倍層、
５．１４はコンタクト層、
６．７．１５．１６は電極、
１３ａ 、 １３ｂは１３のＳＬＳを構成する半導体層
、である。FIG. 1 is a side sectional view of an APD embodiment according to the present invention, FIG. 2 is a partial side sectional view showing details of the light absorption layer, and FIG. 3 is a side sectional view of a conventional APD example. In the figure, 1.11 is a substrate, 2 is a buffer layer, 3.13 is a light absorption layer, 4.12 is a carrier multiplication layer, 5.14 is a contact layer, 6.7.15.16 is an electrode, 13a, 13b is a semiconductor layer constituting 13 SLSs.
Claims (1)
格子構造でなり、キャリア増倍層（１２）がシリコンで
なることを特徴とするアバランシ・ホトダイオード。An avalanche photodiode characterized in that the light absorption layer (13) has a strained layer superlattice structure of a III-V compound semiconductor, and the carrier multiplication layer (12) is made of silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60065637A JPS61224469A (en) | 1985-03-29 | 1985-03-29 | Avalanche photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60065637A JPS61224469A (en) | 1985-03-29 | 1985-03-29 | Avalanche photodiode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61224469A true JPS61224469A (en) | 1986-10-06 |
Family
ID=13292736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60065637A Pending JPS61224469A (en) | 1985-03-29 | 1985-03-29 | Avalanche photodiode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61224469A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5308995A (en) * | 1991-07-12 | 1994-05-03 | Hitachi, Ltd. | Semiconductor strained SL APD apparatus |
-
1985
- 1985-03-29 JP JP60065637A patent/JPS61224469A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5308995A (en) * | 1991-07-12 | 1994-05-03 | Hitachi, Ltd. | Semiconductor strained SL APD apparatus |
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