JPS61154085A - Semiconductor photoreceptor - Google Patents
Semiconductor photoreceptorInfo
- Publication number
- JPS61154085A JPS61154085A JP59277517A JP27751784A JPS61154085A JP S61154085 A JPS61154085 A JP S61154085A JP 59277517 A JP59277517 A JP 59277517A JP 27751784 A JP27751784 A JP 27751784A JP S61154085 A JPS61154085 A JP S61154085A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- semiconductor layer
- onto
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 108091008695 photoreceptors Proteins 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 10
- 230000004888 barrier function Effects 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 238000007493 shaping process Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 10
- 230000031700 light absorption Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は０．８〜１．６μｍ帯の光通信用半導体受光装
置に係り、ショットキ（Ｓｃｈｏｔｔｋｙ）電極を有す
るＭ Ｓ Ｍ −Ｐ Ｄ （Ｍｅｔａｌ−Ｓｅｍｉｃｏ
ｎｄｕｃｔｏｒ−ＭｅｔａｌＰｈｏｔｏｄｅｔｅｃｔｏ
ｒ）の構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor light receiving device for optical communication in the 0.8 to 1.6 μm band, and relates to a semiconductor light receiving device for optical communication in the 0.8 to 1.6 μm band, and includes an M S M -P D (Metal) having a Schottky electrode. -Semico
ndductor-MetalPhotodetecto
Regarding the structure of r).
従来のフォトディテクタではＰＩＮ（ｐ型半導体−絶縁
体−ｎ型半導体）ダイオードやＡＰＤ（Ａｖａｌａｎｃ
ｈｅ Ｐｈｏｔｏｄｉｏｄｅ）等のバルク構造の素子が
用いられていたが、ＭＳＭ−ＰＤは表面構造の素子で、
構造が簡単で集積が容易である。例えば電界効果トラン
ジスタ（ＦＥＴ）と集積する場合は、ゲート金属の蒸着
と同時にＭＳＭ−ＰＤを形成できる等の利点がある。Conventional photodetectors use PIN (p-type semiconductor-insulator-n-type semiconductor) diodes and APD (Avalanche) diodes.
Bulk structure elements such as the photodiode (he Photodiode) were used, but MSM-PD is a surface structure element,
It has a simple structure and is easy to integrate. For example, when integrated with a field effect transistor (FET), there are advantages such as the ability to form an MSM-PD at the same time as gate metal deposition.
しかしながら、ＭＳＭ−ＰＤは上記のバルク構造の素子
に比し、ショットキ障壁の形成が難しく暗電流が大きく
なりやすい欠点があり、何らかの対策が望まれる。However, the MSM-PD has the drawback that it is difficult to form a Schottky barrier and the dark current tends to be large compared to the above-mentioned bulk structure element, and some countermeasure is desired.
第５図（ａｌ、 （ｂｌはそれぞれ従来例による０、８
μｍ帯のＭＳＭ−ＰＤの基板断面図、平面図である。Fig. 5 (al, (bl are respectively 0 and 8 according to the conventional example)
FIG. 2 is a cross-sectional view and a plan view of a substrate of a μm band MSM-PD.
第５図（ａ）において、半絶縁性ガリウム砒素（ＳＩ−
ＧａＡｓ）基板１上に被着された光吸収層のｎ型ＧａＡ
ｓ（ｎ−ＧａＡｓ）層２とアルミニウム（ＡＩ）電極３
と４でショットキ障壁を形成して構成される。In FIG. 5(a), semi-insulating gallium arsenide (SI-
n-type GaAs) as a light absorption layer deposited on the substrate 1
s(n-GaAs) layer 2 and aluminum (AI) electrode 3
and 4 form a Schottky barrier.
第５図（ｂ）において、Ａ１電極３と４はそれぞれ櫛型
に、その歯は交互に入り組んで形成されている。In FIG. 5(b), the A1 electrodes 3 and 4 are each formed in a comb shape, and the teeth of the electrodes are alternately intertwined.
第５図（ａｌはＡ−Ａ断面を示す。FIG. 5 (al indicates the AA cross section.
このような櫛型構成により、大きな受光面積が得られる
。Such a comb-shaped configuration provides a large light-receiving area.
第６図は従来例による１、３〜１．６μｍ帯のＭＳＭ−
ＰＤの基板断面図である。Figure 6 shows a conventional MSM in the 1, 3 to 1.6 μm band.
FIG. 3 is a cross-sectional view of a PD substrate.
図において、半絶縁性インジウム燐（Ｓｌ−１ｎＰ）基
板１）上に被着され、ＩｎＰと格子整合する組成を有す
る光吸収層としてのインジウムガリウム砒素（Ｉｎ０．
５ｓＧａｏ、 ４？ＡＳ）層１２とＡＩ電極１３と１４
でシ１ｆｆ７トキ障壁を形成して構成される。In the figure, indium gallium arsenide (In0.
5sGao, 4? AS) layer 12 and AI electrodes 13 and 14
It is constructed by forming a 1ff7 barrier.
第７図は他の従来例による０、８μｍ帯のＭＳＭ−ＰＤ
の基板断面図である。Figure 7 shows another conventional MSM-PD in the 0 and 8 μm band.
FIG.
この構造は米国のツユ二ズ・エアクラフト社より出願さ
れた特開昭５８−１２３７８号明細書に開示されている
。This structure is disclosed in Japanese Patent Application Laid-Open No. 12378/1985 filed by Tsuyuniz Aircraft Company of the United States.
主要な構成は第５図と同じであるが、露出するｎ−Ｇａ
Ａｓ層２の表面にパッシベーションのためにアルミニウ
ムガリウム砒素（Ａ１． Ｇａ、−ウＡｓ、 ｘは混
晶値）層６が被着されている。The main structure is the same as in Figure 5, but the exposed n-Ga
An aluminum gallium arsenide (A1.Ga, -UAs, x is a mixed crystal value) layer 6 is deposited on the surface of the As layer 2 for passivation.
このＡＩＸ Ｇａｔ−ｘ Ａｓ層６は禁制帯幅が、光吸
収層のｎ−ＧａＡｓ層２より大きく光を透過するためウ
ィンド層と呼ばれ、受光に影響を与えない。This AIX Gat-x As layer 6 has a larger forbidden band width than the n-GaAs layer 2, which is the light absorption layer, and transmits light, so it is called a window layer and does not affect light reception.
この場合は、ｎ−ＧａＡｓ層２はめウィンド層として寄
与するが暗電流の減少には役立たない。In this case, the n-GaAs layer 2 serves as a window layer, but does not help reduce dark current.
上記問題点の解決は、半導体基板、もしくは該半導体基
板上に被着された第１の半導体層上に、該半導体基板、
もしくは該第１の半導体層より禁制帯幅の大きい第２の
半導体層を被着し、該第２の半導体層上に直接金属電極
を形成してなる本発明による半導体受光装置により達成
される。To solve the above problems, the semiconductor substrate, or the first semiconductor layer deposited on the semiconductor substrate,
Alternatively, this can be achieved by the semiconductor light receiving device according to the present invention, which is formed by depositing a second semiconductor layer having a larger forbidden band width than the first semiconductor layer, and forming a metal electrode directly on the second semiconductor layer.
また前記第２の半導体層が、その禁制帯幅が表面より内
部に向かって漸減するような組成を有するようにすれば
、高速応答性が得られる。Further, if the second semiconductor layer has a composition such that its forbidden band width gradually decreases from the surface toward the inside, high-speed response can be obtained.
本発明により、光吸収層（第１の半導体層）の主に、禁
制帯幅の大きいウィンド層（第２の半導体層）を設け、
この上にショットキ電極を形成することにより、シッッ
トキ障壁の高さを大きくして暗電流を減少させることが
できる。According to the present invention, a window layer (second semiconductor layer) with a large forbidden band width is provided mainly in the light absorption layer (first semiconductor layer),
By forming a Schottky electrode on this, the height of the Schottky barrier can be increased and dark current can be reduced.
第３図は禁制帯幅の大きいウィンド層にショットキ電極
を形成したＭＳＭ−ＰＤのエネルギ準位図である。FIG. 3 is an energy level diagram of an MSM-PD in which a Schottky electrode is formed in a window layer with a large forbidden band width.
図は左側の金属Ｍに負、右側の金属Ｍに正の電位を与え
た場合に、中央の半導体Ｓに生じたショットキ障壁の様
子を示す。図でＰＬはＦｅｒｍｉ準位、３１はガソード
側のポテンシャルのくぼみに捕獲された正孔、３２はア
ノード側のポテンシャルのくぼみに捕獲された電子を示
す。The figure shows the Schottky barrier that occurs in the central semiconductor S when a negative potential is applied to the metal M on the left and a positive potential is applied to the metal M on the right. In the figure, PL indicates the Fermi level, 31 indicates holes captured in the potential depression on the gasode side, and 32 indicates electrons captured in the potential depression on the anode side.
シッットキ障壁の高さはＧａＡｓ層単独の場合より高く
なり、暗電流は減少する。しかしながら上記の捕獲正孔
、電子によりパルス応答が劣化する欠点がある。The height of the Schittke barrier is higher than in the case of the GaAs layer alone, and the dark current is reduced. However, there is a drawback that the pulse response deteriorates due to the above-mentioned trapped holes and electrons.
第４図は禁制帯幅の大きいウィンド層にショットキ電極
を形成し、かつウィンド層の禁制帯幅に傾斜をもたせた
ＭＳＭ−ＰＤのエネルギ準位図である。FIG. 4 is an energy level diagram of an MSM-PD in which a Schottky electrode is formed in a window layer having a large forbidden band width, and the forbidden band width of the window layer is made to have a slope.
この場合は、ウィンド層の禁制帯幅を表面（金属側）よ
り、内部（吸収層）に向かって漸減するような組成にし
て、上記のポテンシャルのくぼみをなくする。In this case, the composition of the window layer is such that the forbidden band width gradually decreases from the surface (metal side) toward the interior (absorption layer) to eliminate the potential depression described above.
そのためウィンド層界面に正孔と電子は蓄積されること
なく、パルス応答の劣化を減少させると同時に、低暗電
流化が行える。Therefore, holes and electrons are not accumulated at the window layer interface, reducing deterioration of pulse response and reducing dark current.
第１図（ａ）、 （ｂ）、 （Ｃ）はそれぞれ本発明に
よる０、８μｍ帯のＭＳＭ−ＰＤの基板断面図、ウィン
ド層の厚さ方向の組成が一様な場合の混晶値対厚さ方向
の距離の関係図、同様に厚さ方向の組成が傾斜する場合
の関係図である。Figures 1 (a), (b), and (C) are cross-sectional views of the substrate of MSM-PD in the 0 and 8 μm bands according to the present invention, and the mixed crystal value vs. when the composition in the thickness direction of the window layer is uniform. It is a relationship diagram of the distance in the thickness direction, and a relationship diagram when the composition in the thickness direction is similarly inclined.
第１図（ａ）において、５ｌ−ＧａＡｓ基板１上に光吸
収層として厚さ２〜３μｍのｎ−ＧａＡｓ層２と、ウィ
ンド層として厚さ１０００人のＡ１）ｌ Ｇｅｔ−ｘＡ
ｓ層５を順次被着し、この上にショットキ電極としてＡ
Ｉ電極３と４を形成する。In FIG. 1(a), an n-GaAs layer 2 with a thickness of 2 to 3 μm is formed as a light absorption layer on a 5l-GaAs substrate 1, and an A1)l Get-xA layer with a thickness of 1000 nm is formed as a window layer.
The s-layer 5 is deposited in sequence, and a Schottky electrode is formed on this
I electrodes 3 and 4 are formed.
第１図（ｂ）において、ウィンド層のＡＩＸ Ｇａ１−
、Ａｓ層５の厚さ方向の組成が一様な場合の混晶値Ｘと
厚さ方向の距離の関係が示される。In FIG. 1(b), AIX Ga1- of the wind layer
, shows the relationship between the mixed crystal value X and the distance in the thickness direction when the As layer 5 has a uniform composition in the thickness direction.
第１図（Ｃ）において、ウィンド層のＡ１）ｌ Ｇａｔ
−、Ａｓ層５の厚さ方向の組成が傾斜する場合の混晶値
Ｘと厚さ方向の距離の関係が示される。In FIG. 1(C), A1)l Gat of the wind layer
-, the relationship between the mixed crystal value X and the distance in the thickness direction is shown when the composition in the thickness direction of the As layer 5 is inclined.
第２図（ａ）、 （ｂ）はそれぞれ本発明による１、３
〜１．６μｍ帯のＭＳＭ−ＰＤの基板断面図、ウィンド
層の厚さ方向の組成が傾斜する場合の禁制帯幅対厚さ方
向の距離の関係図である。FIGS. 2(a) and 2(b) are 1 and 3 according to the present invention, respectively.
FIG. 2 is a cross-sectional view of a substrate of MSM-PD in the ~1.6 μm band, and a relationship diagram of the forbidden band width versus the distance in the thickness direction when the composition of the window layer in the thickness direction is inclined.
第２図（ａ）において、５ｌ−１ｎＰ基板ｌｌ上に、光
吸収層としてＩｎＰと格子整合する組成を有する厚さ２
〜３μｍのＩｎｏ、 ５ｚＧａｅ、 ４？Ａ！１層１２
と、ウィンド層として厚さ１０００人のインジウムガリ
ウム砒素燐（ＩｎｘＧａ＋−Ｊｓ＋−、ｐ、）層１５を
順次被着し、この上にショットキ電極としてＡＩ電極１
３と１４を形成する。In FIG. 2(a), a light absorption layer having a composition lattice-matched to InP is formed on a 5l-1nP substrate ll with a thickness of 2.
~3μm Ino, 5zGae, 4? A! 1 layer 12
Then, an indium gallium arsenide phosphorus (InxGa+-Js+-, p,) layer 15 with a thickness of 1000 layers is deposited as a window layer, and an AI electrode 1 is formed as a Schottky electrode on this layer.
3 and 14 are formed.
第２図伽）において、ウィンド層の厚さ方向の組成が傾
斜する場合の禁制帯幅Ｅ、と厚さ方向の距離の関係が示
される。FIG. 2) shows the relationship between the forbidden band width E and the distance in the thickness direction when the composition of the wind layer in the thickness direction is gradient.
以上説明したように本発明によれば、暗電流が少なく、
パルス応答の速いＭＳＭ構造のフォトディテクタが得ら
れる。As explained above, according to the present invention, dark current is small and
A photodetector having an MSM structure with a fast pulse response can be obtained.
第１図（ａｌ、 （ｂ）、 （Ｃ）はそれぞれ本発明に
よる０、８μｍ帯のＭＳＭ−ＰＤの基板断面図、ウィン
ド層の厚さ方向の組成が一様な場合の混晶値対厚さ方向
の距離の関係図、同様に厚さ方向の組成が傾斜する場合
の関係図、
第２図＋８）、 （ｂ）はそれぞれ本発明による１、３
〜１．６μｍ帯のＭＳＭ−ＰＤの基板断面図、ウィンド
層の厚さ方向の組成が傾斜する場合の禁制帯幅対厚さ方
向の距離の関係図、
第３図は禁制帯幅の大きいウィンド層にショットキ電極
を形成したＭＳＭ−ＰＤのエネルギ準位図、
第４図は禁制帯幅の大きいウィンド層にショットキ電極
を形成し、かつウィンド層の禁制帯幅に傾斜をもたせた
ＭＳＭ−ＰＤのエネルギ準位図、第５図（ａ）、 （ｂ
）はそれぞれ従来例による０、８μｍ帯のＭＳＭ−ＰＩ
）の基板断面図、平面図、第６図は従来例による１、３
〜１．６μｍ帯のＭＳＭ−ＰＤの基板断面図、
第７図は他の従来例による０、８μｍ帯のＭＳＭ−ＰＤ
の基板断面図である。
図において、
１は５ｌ−ＧａＡｓ基板、
２は光吸収層（第１の半導体層）で
ｎ −ＧａＡｓｌＳ
３．４はショットキ電極、
５はウィンド（第２の半導体層）で
ＡＩ、 Ｇａ、−ｘＡｓ層、
６はパッシベーション層でＡＩ、 Ｇａ、−ｘＡｓ層、
１）は５ｌ−１ｎＰ基板、
１２は光吸収層（第１の半導体層）で
Ｉｎｎ、 ５ｓＧａｅ、 ４？Ａ３層、１３、１４はシ
ョットキ電極、
１５はウィンド（第２の半導体Ｊｉ）でＩｎｘＧａ＋−
ｘＡｓｔ−ｙＰｙ層、
ＰＬはＦｅｒｍｉ準位、
３１はポテンシャルのくぼみに捕獲された正孔、３２は
ポテンシャルのくぼみに捕獲された電子を示す。
’ｔｇｔｒｉｉFigures 1 (al, b), and (c) are cross-sectional views of the substrate of MSM-PD in the 0 and 8 μm bands according to the present invention, respectively, and the mixed crystal value versus thickness when the composition in the thickness direction of the window layer is uniform. A relationship diagram of the distance in the width direction, and a relationship diagram when the composition in the thickness direction is similarly inclined.
A cross-sectional view of the MSM-PD substrate in the ~1.6 μm band, a diagram of the relationship between the forbidden band width and the distance in the thickness direction when the composition in the thickness direction of the window layer is gradient, and Figure 3 shows a window with a large forbidden band width. Figure 4 shows the energy level diagram of an MSM-PD with a Schottky electrode formed in the layer. Energy level diagram, Figure 5 (a), (b
) are MSM-PIs in the 0 and 8 μm bands according to the conventional example, respectively.
) board cross-sectional view, top view, and FIG. 6 are conventional examples 1 and 3.
~1.6 μm band MSM-PD substrate cross-sectional view, Figure 7 is another conventional example of 0 and 8 μm band MSM-PD
FIG. In the figure, 1 is a 5l-GaAs substrate, 2 is a light absorption layer (first semiconductor layer) and n-GaAslS, 3.4 is a Schottky electrode, and 5 is a window (second semiconductor layer) made of AI, Ga, -xAs. layer, 6 is a passivation layer, AI, Ga, -xAs layer,
1) is a 5l-1nP substrate, 12 is a light absorption layer (first semiconductor layer) of Inn, 5sGae, 4? A3 layer, 13, 14 are Schottky electrodes, 15 is a window (second semiconductor Ji), InxGa+-
In the xAst-yPy layer, PL is the Fermi level, 31 is a hole captured in the potential depression, and 32 is an electron captured in the potential depression. 'tgtrii
Claims (2)
た第１の半導体層上に、該半導体基板、もしくは該第１
の半導体層より禁制帯幅の大きい第２の半導体層を被着
し、該第２の半導体層上に直接金属電極を形成してなる
ことを特徴とする半導体受光装置。(1) The semiconductor substrate or the first semiconductor layer is coated on the semiconductor substrate or the first semiconductor layer deposited on the semiconductor substrate.
1. A semiconductor light-receiving device comprising: a second semiconductor layer having a larger forbidden band width than that of the semiconductor layer; and a metal electrode formed directly on the second semiconductor layer.
内部に向かって漸減するような組成を有することを特徴
とする特許請求の範囲第１項記載の半導体受光装置。(2) The semiconductor light-receiving device according to claim 1, wherein the second semiconductor layer has a composition such that its forbidden band width gradually decreases from the surface toward the inside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59277517A JPS61154085A (en) | 1984-12-26 | 1984-12-26 | Semiconductor photoreceptor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59277517A JPS61154085A (en) | 1984-12-26 | 1984-12-26 | Semiconductor photoreceptor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61154085A true JPS61154085A (en) | 1986-07-12 |
Family
ID=17584696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59277517A Pending JPS61154085A (en) | 1984-12-26 | 1984-12-26 | Semiconductor photoreceptor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61154085A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6319881A (en) * | 1986-07-08 | 1988-01-27 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション | Semiconductor photodetector |
| JPS6386481A (en) * | 1986-09-30 | 1988-04-16 | Agency Of Ind Science & Technol | High-sensitivity lateral photodetector |
| US5115294A (en) * | 1989-06-29 | 1992-05-19 | At&T Bell Laboratories | Optoelectronic integrated circuit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56111273A (en) * | 1980-02-07 | 1981-09-02 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor photodetecting device |
| JPS59136981A (en) * | 1983-01-27 | 1984-08-06 | Fujitsu Ltd | Semiconductor photo detector |
-
1984
- 1984-12-26 JP JP59277517A patent/JPS61154085A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56111273A (en) * | 1980-02-07 | 1981-09-02 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor photodetecting device |
| JPS59136981A (en) * | 1983-01-27 | 1984-08-06 | Fujitsu Ltd | Semiconductor photo detector |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6319881A (en) * | 1986-07-08 | 1988-01-27 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション | Semiconductor photodetector |
| JPH0552070B2 (en) * | 1986-07-08 | 1993-08-04 | Ibm | |
| JPS6386481A (en) * | 1986-09-30 | 1988-04-16 | Agency Of Ind Science & Technol | High-sensitivity lateral photodetector |
| US5115294A (en) * | 1989-06-29 | 1992-05-19 | At&T Bell Laboratories | Optoelectronic integrated circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7829915B2 (en) | Avalanche photodiode | |
| EP2446483B1 (en) | Low-level signal detection by semiconductor avalanche amplification | |
| US5075750A (en) | Avalanche photodiode with adjacent layers | |
| EP0497279B1 (en) | Avalanche photodiode | |
| EP0452801B1 (en) | Semiconductor device having light receiving element and method of producing the same | |
| CN110311000B (en) | Second-class superlattice avalanche photodetector and manufacturing method thereof | |
| JPH04111478A (en) | Light-receiving element | |
| JP2002231992A (en) | Semiconductor light receiving element | |
| JPS62259481A (en) | Semiconductor light receiving device | |
| JPS61154085A (en) | Semiconductor photoreceptor | |
| JPH0493088A (en) | Avalanche photodiode | |
| JPS6285477A (en) | Photosemiconductor device | |
| JP2664960B2 (en) | Avalanche photodiode | |
| JPH03291979A (en) | Avalanche photodiode | |
| JP2700492B2 (en) | Avalanche photodiode | |
| JPH01144687A (en) | Semiconductor photodetector | |
| JPH01194352A (en) | Photo detector and integrated receiver | |
| JP2852361B2 (en) | Super lattice photoelectric conversion element | |
| JPS6156469A (en) | Semiconducltor photodetector | |
| JPS61224469A (en) | Avalanche photodiode | |
| JPH0265279A (en) | Semiconductor photodetecting element | |
| US4918508A (en) | Vertical photoconductive detector | |
| JPS61128578A (en) | Inp group light-receiving element | |
| JPS59232470A (en) | Semiconductor light receiving element | |
| JP2995751B2 (en) | Semiconductor light receiving element |