JPS6122444B2 - - Google Patents
Info
- Publication number
- JPS6122444B2 JPS6122444B2 JP15103179A JP15103179A JPS6122444B2 JP S6122444 B2 JPS6122444 B2 JP S6122444B2 JP 15103179 A JP15103179 A JP 15103179A JP 15103179 A JP15103179 A JP 15103179A JP S6122444 B2 JPS6122444 B2 JP S6122444B2
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- gas
- film
- carbide
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004544 sputter deposition Methods 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000011261 inert gas Substances 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052580 B4C Inorganic materials 0.000 claims 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 description 28
- 239000010408 film Substances 0.000 description 24
- 239000000758 substrate Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 6
- 238000005546 reactive sputtering Methods 0.000 description 6
- 239000013077 target material Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012916 structural analysis Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000013076 target substance Substances 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15103179A JPS5673407A (en) | 1979-11-20 | 1979-11-20 | Method of manufacturing carbide film resistor |
| GB8032616A GB2061002B (en) | 1979-10-11 | 1980-10-09 | Method for making a carbide thin film thermistor |
| AU63093/80A AU524439B2 (en) | 1979-10-11 | 1980-10-09 | Sputtered thin film thermistor |
| US06/196,011 US4359372A (en) | 1979-10-11 | 1980-10-10 | Method for making a carbide thin film thermistor |
| CA000362125A CA1143865A (en) | 1979-10-11 | 1980-10-10 | Method for making a carbide thin film thermistor |
| DE3038375A DE3038375C2 (de) | 1979-10-11 | 1980-10-10 | Verfahren zur Herstellung eines NTC-Thermistors mit Karbid-Widerstandsdünnschichten |
| FR8022342A FR2467472A1 (fr) | 1979-10-11 | 1980-10-13 | Procede de fabrication d'une thermistance a pellicule mince de carbure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15103179A JPS5673407A (en) | 1979-11-20 | 1979-11-20 | Method of manufacturing carbide film resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5673407A JPS5673407A (en) | 1981-06-18 |
| JPS6122444B2 true JPS6122444B2 (enrdf_load_stackoverflow) | 1986-05-31 |
Family
ID=15509781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15103179A Granted JPS5673407A (en) | 1979-10-11 | 1979-11-20 | Method of manufacturing carbide film resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5673407A (enrdf_load_stackoverflow) |
-
1979
- 1979-11-20 JP JP15103179A patent/JPS5673407A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5673407A (en) | 1981-06-18 |
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