JPS61224441A - Lead frame - Google Patents
Lead frameInfo
- Publication number
- JPS61224441A JPS61224441A JP6532785A JP6532785A JPS61224441A JP S61224441 A JPS61224441 A JP S61224441A JP 6532785 A JP6532785 A JP 6532785A JP 6532785 A JP6532785 A JP 6532785A JP S61224441 A JPS61224441 A JP S61224441A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- lead
- thickness
- resin
- pellet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、樹脂封止半導体素子用のリードフレームの構
造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of a lead frame for a resin-sealed semiconductor element.
樹脂封止型のパッケージにおいて、ペレット搭載部・リ
ードを板材より一体として形成し几リードフレームを用
いる。半導体素子の熱抵抗を小さくしようとする場合に
は、高熱伝導性の樹脂、リードフレーム材質を使用する
とともにリードフレームの厚さを厚くする。このリード
フレームの厚さについては、小電力ＩＣの場合に（・ま
ａ １〜０．３ ｙｎｙｎ８．にであるが、パワーＩＣ
ではＱ、３〜Ｇ、８龍程度になり、特にパワーＩＣで問
題Ｉｌｃなる。In a resin-sealed package, the pellet mounting part and leads are formed as one piece from a plate and a lead frame is used. In order to reduce the thermal resistance of a semiconductor element, a highly thermally conductive resin or lead frame material is used, and the lead frame is made thicker. Regarding the thickness of this lead frame, in the case of a small power IC (・Maa 1 to 0.3 ynyn8.
Then it becomes Q, 3~G, 8 dragons, and especially the power IC becomes a problem.
熱伝導の点からいえばペレット搭ａＳのみ厚くすれば皮
層のだが、リードフレームは一枚）板材から打抜く量産
的方法で制作するから、特別にペレット搭載部の厚さを
変えることができない。結局、パワーＩＣのリードフレ
ームは全面にわ １友り厚さを大きくとる。リー
ドフレームを厚い板材よりつくる場合にリード部、特に
樹脂内部に入る部分（以下インナーリドとｂう）の如く
微細加工が要求される部分の加工が難しくなる。板材を
型で打抜く際の最小可能抜き幅は板厚の毛９〜１．０倍
程度であり、微細加工の限度になって−る。From the point of view of heat conduction, it would be possible to increase the thickness of the pellet mounting aS by making the lead frame thicker, but since the lead frame is manufactured using a mass production method of punching out a single plate, it is not possible to specifically change the thickness of the pellet mounting part. In the end, the lead frame of a power IC has a large thickness because it has a wafer across the entire surface. When a lead frame is made from a thick plate material, it becomes difficult to process lead parts, especially parts that require fine processing, such as parts that go inside the resin (hereinafter referred to as "inner leads"). The minimum possible punching width when punching a plate material with a die is about 9 to 1.0 times the thickness of the plate, which is the limit of microfabrication.
ところで、半導体チップはパワーＩＣであっでも、技術
の進歩により極力小型化がはかられている。チップが小
型化きれると、旧来の太きなペレット搭載部ではテラ１
とインナーリードをつなぐワイヤの長さが長すぎる不部
会が生ずる。そのためペレット搭載部を縮小するととも
にインナーリード全内側に向って延ばすようにしなけれ
ばならない。第２図（ａ） （ＩＣ示すリードフレーム
ではインナーリード１〜１１はペレット搭載部１２の中
心から放射状に位置しているから、インナーリード１〜
１１の先端部は相互の間隔が狭い。しかし、前述の打抜
限度からこの間隔を狭くとるには限度があり、あまりイ
ンナーリード１〜１１の先端をペレット搭載部１２に近
接できない。そのため同図に示すようＶｃｉの距離が大
きくなる。なお同図（ｂ）はｘｘ’方向からみ友断面図
である。By the way, semiconductor chips, even power ICs, are being miniaturized as much as possible due to technological advances. Once the chip is downsized, the conventional thick pellet loading section will be able to handle Tera 1.
The length of the wire connecting the inner lead and the inner lead may be too long. Therefore, it is necessary to reduce the size of the pellet mounting portion and to extend the inner lead completely inward. FIG. 2(a) (In the lead frame shown in the IC, inner leads 1 to 11 are located radially from the center of pellet mounting section 12, so inner leads 1 to
The tips of No. 11 are closely spaced from each other. However, there is a limit to how narrow this interval can be made due to the above-mentioned punching limit, and the tips of the inner leads 1 to 11 cannot be too close to the pellet mounting portion 12. Therefore, as shown in the figure, the distance of Vci becomes large. Note that FIG. 6B is a sectional view taken from the xx' direction.
本発明の目的は、上記の欠点を除去し、パワーＩＣ用の
ように厚さの浮い板材を用いるリードフレームにおいて
、ペレット搭１ｊｔｓの近傍に１でインナーリードを延
長することのできるリードフレームを提供することにあ
る。An object of the present invention is to eliminate the above-mentioned drawbacks and provide a lead frame that uses a thick floating plate material such as for power ICs, and in which the inner leads can be extended in the vicinity of the pellet tower 1jts. It's about doing.
この場倉、熱抵抗の点から、ペット搭載部の厚みは充分
なものであるばかりでなく、リードもパワーＩＣでは、
比較的大きい電流が流れるから電気抵抗が小さｂように
厚くしておく必要がある。In this case, from the point of view of thermal resistance, not only the thickness of the pet mounting part is sufficient, but also the lead is not a power IC.
Since a relatively large current flows through it, it is necessary to make it thick so that the electrical resistance is small.
本発明に係る樹力旨封止半導体素子用のリードフレーム
は、樹脂内部に入るリード（インナーリード）の厚さが
樹脂外部に出るリードの厚さより少なくともペレット搭
載部近傍において、薄くしであるようにしたものである
。The lead frame for a tree-sealed semiconductor device according to the present invention is such that the thickness of the leads entering the resin (inner leads) is thinner than the thickness of the leads exiting outside the resin, at least in the vicinity of the pellet mounting part. This is what I did.
ペレット搭載部に近い先端部は、リードの厚さが薄くし
であるから間隔を狭く打抜きが可能である。したがって
、リード先端はペレット搭載部に従来より近接して延ば
すことができる。At the leading end near the pellet mounting part, the lead thickness is thin and the lead can be punched out at narrow intervals. Therefore, the lead tip can be extended closer to the pellet mounting portion than conventionally.
またリードについては加工精度が要求される先端部分の
み薄くし、その他の部分はペレット搭載部と同じ厚みで
あるから、電流による電圧降下についても、殆ど問題は
生じない。In addition, since only the leading end portion of the lead that requires high processing accuracy is made thin, and the other portions have the same thickness as the pellet mounting portion, there is almost no problem with voltage drop due to current.
第１図は、パワーｔＣに本発明を適用し几実施例である
。第１図（、）はペレット搭載部１２近傍附近を示した
リードフレームの要部平面図である。同図（ｂ）はｘｘ
’における断面図である。インナーリード１〜１１につ
いてすべてそうであるが、図に示すようにインナーリー
ド６の先端部６ａの厚みがインナーリード６、ペレット
搭載部１２の淳みより薄くなっている。したがって、こ
の部分はリード間の間隔を充分狭く打抜くことができ、
図示のようにペレット搭載部１２との間隔ノは従来例よ
りはるかに小さい。FIG. 1 shows an embodiment in which the present invention is applied to power tC. FIG. 1(,) is a plan view of the main part of the lead frame showing the vicinity of the pellet mounting section 12. Figure (b) is xx
' is a sectional view at '. As for all the inner leads 1 to 11, the thickness of the tip end 6a of the inner lead 6 is thinner than that of the inner lead 6 and the pellet mounting part 12, as shown in the figure. Therefore, this part can be punched with a sufficiently narrow gap between the leads.
As shown in the figure, the distance from the pellet mounting section 12 is much smaller than that of the conventional example.
上記リードフレームを製作する方法として法化学的方法
もあるが、最も簡単には先ず板厚そのま＼で充分に打抜
が可能なノくターンを打抜いて加工し、次にインナーリ
ードの先端部で集中している個所につぶしを加え、その
部分の板厚を薄くする。その後、他より狭い間隔で打抜
くようにすればよい〇
〔発明の効果〕
以上、詳しく説明したように、本発明においてはリード
先端部管薄くすることによって、そのリード間隔を充分
に狭くすることが可能になり、ペレット搭載部に近接し
て延ばすことができる。従って、ボンディングワイヤも
短かくてすみ、パワーＩＣの形状小形化が可能になる。There is also a forensic method to manufacture the above lead frame, but the easiest way is to first punch out a turn that can be punched out sufficiently with the same thickness as the plate, and then process the tip of the inner lead. Add flattening to areas where it is concentrated and reduce the thickness of the board in those areas. After that, punching can be performed at narrower intervals than the others.〇 [Effects of the Invention] As explained in detail above, in the present invention, by making the lead tip tube thinner, the lead interval can be made sufficiently narrower. can be extended close to the pellet loading area. Therefore, the bonding wires also need to be short, making it possible to downsize the power IC.
このとき、ペレット搭載部のり一−ドフレーム厚さは充
分厚（、ＩＣの熱抵抗が増大することはない。筐たイン
ナーリード先端部のみ薄くするのであるから、リードの
電流による電圧低下は問題にならない。さらにワイヤボ
ンディングの際にボンディング場所の板厚が薄いと、局
所的熱上昇に有利でボンディングが容易になる利点もあ
る。At this time, the thickness of the glue frame in the pellet mounting area is sufficiently thick (there is no increase in the thermal resistance of the IC. Since only the tip of the inner lead of the casing is made thin, voltage drop due to lead current is a problem. Furthermore, when wire bonding is performed, if the plate thickness at the bonding location is thin, it is advantageous for localized heat rise and facilitates bonding.
第１図は本発明の一実施例を示すペレット搭載部近傍の
リードフレーム要部平面図および断面図、第２図は従来
例で、第１図に対応する図である。
１〜１１ … インナーリード、
１２ ・・・ペレット搭載部、
１１〜１１＆ ・・・インナーリード先端部。FIG. 1 is a plan view and a cross-sectional view of a main part of a lead frame near a pellet mounting portion showing an embodiment of the present invention, and FIG. 2 is a view corresponding to FIG. 1 of a conventional example. 1-11...Inner lead, 12...Pellet loading part, 11-11&...Inner lead tip.
Claims (1)
脂内部に入るリードの厚さが樹脂外部に出るリードの厚
さより、少なくともペレット搭載部近傍において、薄く
してあることを特徴とする板材より一体として形成され
るリードフレーム。A lead frame for a resin-sealed semiconductor device, formed integrally from a plate material, characterized in that the thickness of the leads that enter the resin is thinner than the thickness of the leads that exit outside the resin, at least in the vicinity of the pellet mounting area. lead frame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6532785A JPS61224441A (en) | 1985-03-29 | 1985-03-29 | Lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6532785A JPS61224441A (en) | 1985-03-29 | 1985-03-29 | Lead frame |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61224441A true JPS61224441A (en) | 1986-10-06 |
Family
ID=13283707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6532785A Pending JPS61224441A (en) | 1985-03-29 | 1985-03-29 | Lead frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61224441A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5929513A (en) * | 1994-08-16 | 1999-07-27 | Fujitsu Limited | Semiconductor device and heat sink used therein |
| US5973388A (en) * | 1998-01-26 | 1999-10-26 | Motorola, Inc. | Leadframe, method of manufacturing a leadframe, and method of packaging an electronic component utilizing the leadframe |
-
1985
- 1985-03-29 JP JP6532785A patent/JPS61224441A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5929513A (en) * | 1994-08-16 | 1999-07-27 | Fujitsu Limited | Semiconductor device and heat sink used therein |
| US5973388A (en) * | 1998-01-26 | 1999-10-26 | Motorola, Inc. | Leadframe, method of manufacturing a leadframe, and method of packaging an electronic component utilizing the leadframe |
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