JPS61216436A - Semiconductor device - Google Patents

Abstract

PURPOSE:To prevent damages, such as the breaking, cracking, etc. of a semiconductor chip by coating the peripheral section of the semiconductor chip with a protective film such as an insulating film consisting of polyimide, an silicon nitride film, epoxy resin, etc. CONSTITUTION:A protective film 7 coated for protecting the peripheral section 4 of a semiconductor chip 1 is formed to the peripheral section 4. An insulating film consisting of polyimide, an silicon nitride film, epoxy resin, etc. is used as the protective film 7. A shock to the semiconductor chip 1 is relaxed on the handling of the semiconductor chip 1 in the semiconductor chip 1, the peripheral section 4 thereof is protected by the protective film 7, thus reducing the generation of a breaking 5, a crack 6, etc. due to handling.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a method for reinforcing the peripheral portion of a semiconductor chip to facilitate handling of the semiconductor chip.

C. Prior Art Conventionally, as shown in Figure 2 (a) of a semiconductor chip, the periphery of the semiconductor chip was not protected at all. That is, in FIG. 2, 1 is a semiconductor chip, 2 is a side surface of the semiconductor chip 1, 3 is an operating part of the semiconductor device formed on the previous layer semiconductor chip 1, and 4 is a peripheral part of the semiconductor chip 1. . Further, FIG. 2(b) is a perspective view of the semiconductor chip 1 when damage occurs due to semiconductor chip IK handling.

5a is a defect such as a crack occurring at the corner of the semiconductor 9-tube 1, and sb is a defect such as a chip occurring on the side surface.

In the following description, defects 5a such as cracks and cracks, and defects sbv such as chips are collectively referred to as defects 5.

6 is a crack. ``A large number of elements'' are formed on the dicing process.
(j Semiconductor devices are manufactured by separating each element at the wafer step in the wafer process, moving to the assembly process, and packaging the semiconductor chips in boxes. After the dicing process, it is necessary to handle each individual semiconductor chip 1. The semiconductor chip 1t - Handling is always involved when die bonding.During this handling, as shown in Figure 2, the semiconductor chip 1F) surroundings s4
If the car is not protected, some impact during handling will cause damage to the car as shown in Figure 2(b). 'Crack 6
Such damage is likely to occur. In particular, in GaAs devices, defects 5 and cracks 6 are more likely to occur than in silicon devices, causing a decrease in yield.

[Problem that the invention seeks to solve]

As described above, the conventional semiconductor chip 1 in which the peripheral portion 4 is not protected has the following damage due to handling.
．． Damage such as cracks 6 is likely to occur, which poses a problem in improving yield. Furthermore, for the above reasons, considerable training was required when handling the semiconductor chip 1. Especially G
Semiconductor chips using aAg substrates are more likely to suffer from 5° cracks 6 than Si substrates, which poses a major problem in improving yield.

This invention has been made to solve the above-mentioned problems, and its purpose is to make it difficult for damage such as chipping and cracking to occur in semiconductor chips.

[Means for Solving the Problems] In the semiconductor device according to the present invention, the peripheral portion of the semiconductor chip is coated with a protective film, for example, an insulating film made of polyimide, silicon nitride film, epoxy resin, or the like.

[Effect]

In this invention, since the periphery of the semiconductor chip is protected by a protective film, there is no possibility of damage due to handling.
Damage such as cracks is less likely to occur.

〔Example〕

FIGS. 1(a) and 1(b) are a perspective view and a front view of a semiconductor chip showing an embodiment of the present invention. In FIG. 1, the same reference numerals as in FIG. 2 indicate the same parts.

T is the peripheral area 4V of the semiconductor chip 10.
This is a protective film coated for protection, and for example, an insulating film such as polyimide, silicon nitride film, epoxy resin, etc. is used.

In the semiconductor chip 1 in which the peripheral portion 4 is protected by the protective film 7 as described above, the impact on the semiconductor chip 1 is softened when the semiconductor chip 1 is handled.

Defects 5 and cracks 6 caused by handling that previously occurred
etc. can be reduced.

In particular, semiconductor chips based on GaAs substrates have higher cleavage properties than silicon substrate wafers, and are therefore more prone to defects and cracks, which greatly affects yield. therefore,
By using the protective film 7 according to the present invention, the yield per unit is greatly improved.

In the above embodiment, only the surface of the peripheral portion 40 of the semiconductor chip 1 is coated with an insulator to protect it, but the side surface 2 of the semiconductor chip 1 may also be coated. Further, the step of coating the insulator may be performed in the state of a chip or in the state of a wafer.

In addition, in the above embodiment, the effect of preventing damage such as defects 5 and cracks 6 on the semiconductor chip 1 was explained, but there is also an effect of suppressing the gold maple pattern on the peripheral part 4 of the semiconductor chip 1. [Effect] As explained above, this invention forms a protective film by coating the periphery of the semiconductor chip with an insulating material, so that the periphery of the semiconductor chip is protected by this protective film, which eliminates the problems that conventionally occur during handling. This has the advantage that damage such as chips and cracks can be prevented from occurring, and that workability and yield can be improved.

[Brief explanation of drawings]

FIGS. 1(a) and 1(b) are a perspective view and a front view of a semiconductor chip showing an embodiment of the present invention, and FIG. 2(a) is a perspective view of a semiconductor chip. (b) is a perspective view showing a conventional semiconductor chip and defects;
FIG. 3 is a perspective view illustrating damage mv such as cracks. In the figure, 1 is a semiconductor chip, 2 is a side surface of the semiconductor chip, 3 is an operating part, 4 is a peripheral part of the semiconductor chip, and T is a protective film. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figure 1 7: 100 million 1 trap Figure 2

Claims (1)

[Claims] 1. A semiconductor device, characterized in that a peripheral portion of a semiconductor chip is coated with an insulating material to serve as a protective film for preventing defects and cracks caused by handling of the semiconductor chip.