JPS61216371A - Mold type magnetic resistance element - Google Patents

Mold type magnetic resistance element

Info

Publication number
JPS61216371A
JPS61216371A JP60056951A JP5695185A JPS61216371A JP S61216371 A JPS61216371 A JP S61216371A JP 60056951 A JP60056951 A JP 60056951A JP 5695185 A JP5695185 A JP 5695185A JP S61216371 A JPS61216371 A JP S61216371A
Authority
JP
Japan
Prior art keywords
magnetic resistance
resistance element
magnetoresistive element
thermosetting resin
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60056951A
Other languages
Japanese (ja)
Inventor
Yasunobu Iwanaga
岩永 康暢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60056951A priority Critical patent/JPS61216371A/en
Publication of JPS61216371A publication Critical patent/JPS61216371A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To enable the magnetic resistance pattern surface of a magnetic resistance element and the magnetic medium surface on a moving object to approach each other as close as necessary by a method wherein the necessary part of the magnetic resistance element chip is protected with a high molecular resin film. CONSTITUTION:A mold type magnetic resistance element S is formed in such a manner that a magnetic resistance element chip S is fixed on a lead frame supporter 8 and a mold of thermosetting resin 9 is applied. In this mold type magnetic resistance element S, the first buffer layer made of molecular resin 6 is formed on the magnetic resistance element chip S and the second buffer layer made of adhesive high polymer resin is provided between the lead frame supporter 8 and the magnetic resistance element S. Also, the mold of the thermosetting resin 9 is so applied as to have the same height as the surface of the magnetic resistance element chip to expose the surface of the magnetic resistance element S. The magnetic resistance pattern surface and the magnetic medium surface on a moving object can approach each other as close as necessary.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は1回転体の回転数検出や移動体の位置検出その
低磁界有無の検出等広範な用途に使用されるモールド形
磁気抵抗素子に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a molded magnetoresistive element used in a wide range of applications such as detecting the rotational speed of a rotating body, detecting the position of a moving body, and detecting the presence or absence of a low magnetic field.

発明の概要 本発明は、磁性薄膜パターンが形成された磁気抵抗素子
チップをリードフレーム支持体上に固定し、熱硬化性樹
脂で外装したモールド形磁気抵抗素子において。
SUMMARY OF THE INVENTION The present invention relates to a molded magnetoresistive element in which a magnetoresistive element chip on which a magnetic thin film pattern is formed is fixed on a lead frame support and covered with a thermosetting resin.

前記磁気抵抗素子チップ上に形成された高分子樹脂によ
る第1の緩衝層と。
a first buffer layer made of a polymer resin formed on the magnetoresistive element chip;

前記リードフレーム支持体と磁気抵抗素子の間に介装さ
れた接着性を有する高分子樹脂による第2の緩衝層を設
けて、かつ熱硬化性樹脂によって前記磁気抵抗素子チッ
プ面と同一高さに外装を施したものであり。
A second buffer layer made of an adhesive polymer resin is interposed between the lead frame support and the magnetoresistive element, and is made of a thermosetting resin at the same height as the magnetoresistive element chip surface. It has an exterior.

磁性媒体との距離を接近させて分解能を向上することが
できるという効果がある。
This has the effect that resolution can be improved by bringing the distance to the magnetic medium closer.

従来技術 従来のモールド形磁気抵抗素子は、ガラス基板、シリコ
ン基板、グレーズドセラミック基板等の平滑基板上に、
ニッケルー鉄、ニッケルーコバルト等の強磁性材料を用
いて所定の磁性薄膜パターンを形成し、リード線付けお
よび外装を行なった構造とされている。外装は、リード
線の接続工法に応じて各種の異なる外装状態とされる。
Prior art A conventional molded magnetoresistive element is formed on a smooth substrate such as a glass substrate, a silicon substrate, or a glazed ceramic substrate.
It has a structure in which a predetermined magnetic thin film pattern is formed using a ferromagnetic material such as nickel-iron or nickel-cobalt, and lead wires and exterior packaging are performed. The exterior can be in various different exterior states depending on the connection method of the lead wires.

リード線接続を半田工法によって行なう場合は、ガラス
基板またはグレーズドアルミナ基板上に、真空蒸着また
はスパッタリング法等によって磁性薄膜および電極薄膜
を形成し、微細加工技術によって磁性膜パターンを形成
し、接続用電極部とリード端子とを高温半田によって接
続する。そして、粉末エポキシレンジを使用した粉末樹
脂塗装法によって外装が行なわれる。
When connecting lead wires using the soldering method, a magnetic thin film and an electrode thin film are formed on a glass substrate or glazed alumina substrate by vacuum evaporation or sputtering, a magnetic film pattern is formed using microfabrication technology, and a connecting electrode is formed. The part and the lead terminal are connected by high-temperature solder. The exterior is then applied using a powder resin coating method using a powder epoxy range.

ワイヤポンディング工法による接続を用いる場合は、第
2図(A)の断面図、同図(B)の一部破砕の斜視図に
示すような構造となる。すなわち、先ず同図(C)に示
すように、シリコン基板lOの上にSiO□膜11をス
パッタリング法によって形成し、その上に真空蒸着また
はスパッタリング法によってニッケルー鉄薄膜および金
薄膜を形成し、フォトリソグラフィ技術、微細加工技術
を用いてニッケルー鉄薄膜パターン12および接続用金
電極!3を形成する0次にスパッタリング法によって5
intlI114を素子全体に付着せしめ、接続用金電
極13の上部のみ除去して磁気抵抗素子チップSを完成
する。そして、該磁気抵抗素子チップSを熱硬化性接着
剤によってリードフレーム1B上に固着した後、同図(
A)、(B)に示すように、リードフレーム16と接続
用金電極13をボンディングワイヤ15で接続する。そ
の後適当なバッファコート用樹脂を塗布し、最後に熱硬
化性樹脂17を使用してトランスファーモールド成形が
行なわれ、リードフレームの不要部分を除去してモール
ド形磁気抵抗素子として完成する。
When a connection by the wire bonding method is used, the structure is as shown in the cross-sectional view of FIG. 2(A) and the partially broken perspective view of FIG. 2(B). That is, as shown in FIG. 1C, first, a SiO□ film 11 is formed on a silicon substrate 10 by sputtering, a nickel-iron thin film and a gold thin film are formed thereon by vacuum evaporation or sputtering, and then photo-coated. Nickel-iron thin film pattern 12 and connection gold electrode made using lithography technology and microfabrication technology! 5 by the zero-order sputtering method to form 3.
IntlI 114 is adhered to the entire element, and only the upper part of the connection gold electrode 13 is removed to complete the magnetoresistive element chip S. Then, after fixing the magnetoresistive element chip S onto the lead frame 1B with a thermosetting adhesive,
As shown in A) and (B), the lead frame 16 and the connection gold electrode 13 are connected with the bonding wire 15. Thereafter, a suitable buffer coating resin is applied, and finally, transfer molding is performed using thermosetting resin 17, and unnecessary portions of the lead frame are removed to complete the molded magnetoresistive element.

モールド形磁気抵抗素子を回転体の角度検出または移動
体の位置検出等に使用する場合は、通常すだれ形と呼ば
れる磁性薄膜抵抗パターンを複数個並列に配置してブリ
ッジ回路を形成した磁気抵抗素子が使用される。そして
回転体または移動体側には、該磁気抵抗素子の磁性薄膜
抵抗パターンのピッチと同一のピッチで着磁された複数
個の磁石が配列され、上記磁気抵抗素子の磁性薄膜抵抗
パターンと移動体側の磁性媒体とを対向させて、相対的
な位置関係に応じた磁性薄膜抵抗パターンの抵抗変化を
検出するようにしている。
When a molded magnetoresistive element is used to detect the angle of a rotating object or the position of a moving object, a magnetoresistive element in which a bridge circuit is formed by arranging multiple magnetic thin film resistance patterns in parallel, which is usually called a blind pattern, is used. used. A plurality of magnets magnetized at the same pitch as the pitch of the magnetic thin film resistance pattern of the magnetoresistive element are arranged on the rotating body or the moving body side, and the magnetic thin film resistance pattern of the magnetoresistive element and the moving body side are arranged. The magnetic thin film resistor pattern is opposed to the magnetic medium, and the resistance change of the magnetic thin film resistor pattern is detected depending on the relative positional relationship.

従って、充分な検出出力を得るためには、前記磁気抵抗
素子を、移動体側の磁性媒体にできるだけ近接させて、
その着磁ピッチと同程度の距離にセットすることが必要
である。 tImピッチは、通常0.3鵬霞以下である
ことが多く、0.11■以下であることもある。しかし
、従来のモールド形磁気抵抗素子は、熱硬化性樹脂17
の厚さが厚いため、81気抵抗素子を充分移動体側の磁
性媒体面に近づけることができない。
Therefore, in order to obtain a sufficient detection output, the magnetoresistive element should be placed as close as possible to the magnetic medium on the moving object side,
It is necessary to set the distance to be approximately the same as the magnetization pitch. The tIm pitch is usually less than 0.3, and sometimes less than 0.11. However, conventional molded magnetoresistive elements are made of thermosetting resin 17
Because of the large thickness, the 81-magnetic resistance element cannot be brought sufficiently close to the surface of the magnetic medium on the movable body side.

発明が解決しようとする問題点 本発明は、上述の従来の欠点を解決し、磁気抵抗素子と
移動体の磁性媒体面との距離を小さくできる構造とする
Problems to be Solved by the Invention The present invention solves the above-mentioned conventional drawbacks and provides a structure in which the distance between the magnetoresistive element and the magnetic medium surface of the moving body can be reduced.

問題点を解決するための手段 本発明のモールド形磁気抵抗素子は、磁性薄膜パターン
が形成された磁気抵抗素子チップをリードフレーム支持
体上に画定し、熱硬化性樹脂で外装したモールド形磁気
抵抗素子において。
Means for Solving the Problems The molded magnetoresistive element of the present invention is a molded magnetoresistive element in which a magnetoresistive element chip on which a magnetic thin film pattern is formed is defined on a lead frame support, and the molded magnetoresistive element is covered with a thermosetting resin. In Motoko.

前記磁気抵抗素子チップ上に形成された高分子樹脂によ
る第1の緩衝層と。
a first buffer layer made of a polymer resin formed on the magnetoresistive element chip;

前記リードフレーム支持体と磁気抵抗素子の間に介装さ
れた接着性を有する高分子樹脂による第2の緩衝層を設
けて、かつ熱硬化性樹脂によって前記磁気抵抗素子チッ
プ面と同一高さに外装を施した構成として、磁気抵抗素
子面を露出させることにより問題を解決する。
A second buffer layer made of an adhesive polymer resin is interposed between the lead frame support and the magnetoresistive element, and is made of a thermosetting resin at the same height as the magnetoresistive element chip surface. The problem is solved by exposing the magnetoresistive element surface by using an exterior structure.

発明の実施例 次に、本発明について、図面を参照して詳細に説明する
Embodiments of the Invention Next, the present invention will be described in detail with reference to the drawings.

第1図(A)、(B)、(C)はそれぞれ本発明の一実
施例を示す断面図、一部破砕斜視図および主要部の詳細
断面図である。すなわち、先ず、同図(C)に示すよう
に、シリコン基板l上にスパッタリング法によって5i
02112を形成して絶縁膜とし、その上に真空蒸着法
またはスパッタリング法によってニッケルー鉄薄膜を形
成し、続いて同一真空中で金薄膜を形成し、フオトリソ
グラフイ技術、Wk細加工技術を用いてニッケルー鉄薄
膜パターン3と金薄膜パターンを形成する。続いて5i
02膜5をスパッタリング法で形成し。
FIGS. 1(A), 1(B), and 1(C) are a sectional view, a partially exploded perspective view, and a detailed sectional view of the main parts, respectively, showing one embodiment of the present invention. That is, first, as shown in the same figure (C), 5i
02112 was formed to form an insulating film, a nickel-iron thin film was formed on it by vacuum evaporation or sputtering, and then a gold thin film was formed in the same vacuum, using photolithography technology and Wk fine processing technology. A nickel-iron thin film pattern 3 and a gold thin film pattern are formed. followed by 5i
02 film 5 is formed by sputtering method.

微細加工技術によって接続用金電極4を形成する。さら
にその上に高分子樹脂膜6による保護膜を形成して第1
の緩衝層とし、同図(C)に示す磁気抵抗素子チップS
が完成する。
The gold electrode 4 for connection is formed using microfabrication technology. Furthermore, a protective film made of a polymer resin film 6 is formed on top of the first film.
as a buffer layer, and the magnetoresistive element chip S shown in the same figure (C)
is completed.

該磁気抵抗素子チップSを、リードフレーム8上に第2
の緩衝層としてのフレキシブルタイプのシリコン系接1
剤を介して固着する。その後。
The magnetoresistive element chip S is placed on a second lead frame 8.
Flexible type silicone bonding as a buffer layer 1
It is fixed through the agent. after that.

リードフレーム8と接続用金電極4の間をボンディング
ワイヤ7で接続し、ざらに熱硬化性樹脂9を使用して同
図(A)、CB)に示すように磁気抵抗素子チップSの
上面の必要な部分は露出させて他の部分にはトランスフ
ァモールド成形を行なう、すなわち、熱硬化性樹脂9の
高さは、磁気抵抗素子Sの高さと同じであり、熱硬化性
樹脂9の面と、磁気抵抗素子チップSの面とは同一平面
を形成する。
A bonding wire 7 is used to connect the lead frame 8 and the connection gold electrode 4, and a thermosetting resin 9 is used to bond the upper surface of the magnetoresistive element chip S as shown in FIGS. Necessary parts are exposed and transfer molding is performed on other parts. That is, the height of the thermosetting resin 9 is the same as the height of the magnetoresistive element S, and the surface of the thermosetting resin 9 is It forms the same plane as the surface of the magnetoresistive element chip S.

本実施例においては、モールド形磁気抵抗素子全体は熱
硬化性樹脂9によって保護され、磁性抵抗素子チップS
の上面の移動体に接する部分は第1の緩衝層としての前
記高分子樹脂膜6によって保護される。5i02膜5お
よび高分子樹脂膜6は、任意の薄さく例えば50ル鵬以
下)に形成することが可能であり、シリコン基板l上に
形成された磁性抵抗パターン面と移動体上の磁性媒体面
とを必要な距離に接近させることが可能である。従って
、充分な感度と1分解能を得ることができるという効果
がある。また、磁性抵抗素子チップSの上下面はそれぞ
れ前記第1および第2の緩衝層(シリコン系接着剤)を
有するため、モールド成形時の金型による素子自体のダ
メージは防止される。また、リードフレーム方式を採用
しているため、従来の半田付は方式に比較して自動化が
容易で大量生産に適し、安価に提供することができる。
In this embodiment, the entire molded magnetoresistive element is protected by thermosetting resin 9, and the magnetoresistive element chip S
The portion of the upper surface that contacts the moving body is protected by the polymer resin film 6 as the first buffer layer. The 5i02 film 5 and the polymer resin film 6 can be formed to an arbitrary thickness (for example, 50 mm or less), and can be formed on the magnetic resistance pattern surface formed on the silicon substrate and the magnetic medium surface on the moving body. It is possible to bring them close to each other at the required distance. Therefore, there is an effect that sufficient sensitivity and resolution can be obtained. Further, since the upper and lower surfaces of the magnetoresistive element chip S have the first and second buffer layers (silicon adhesive), respectively, damage to the element itself by the mold during molding is prevented. In addition, since the lead frame method is adopted, automation is easier than conventional soldering methods, suitable for mass production, and can be provided at low cost.

発明の効果 以上のように、本発明においては、磁気抵抗素子チップ
の必要な部分は高分子樹脂膜によって保護された構造と
したから、磁気抵抗素子の磁気抵抗パターン面と移動体
上の磁性媒体面とは必要な距離に接近させることが可能
である。従って、充分な感度と、分解能を得ることがで
きるという効果がある。
Effects of the Invention As described above, in the present invention, the necessary portions of the magnetoresistive element chip are protected by a polymer resin film, so that the magnetoresistive pattern surface of the magnetoresistive element and the magnetic medium on the moving body are protected. It is possible to approach the plane as close as necessary. Therefore, there is an effect that sufficient sensitivity and resolution can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(A)、CB)、(C)はそれぞれ本発明の一実
施例を示す断面図、一部破砕斜視図および主要部断面図
であり、第2図(A)、(B)。 (C)はそれぞれ従来のモールド形磁気抵抗素子の一例
を示す断面図、一部破砕斜視図および主要部断面図であ
る。 図において、1:シリコン基板、2:SiO□膜、3:
ニッケルー鉄薄膜パターン、4:接続用金電極、5:5
to2膜、6:高分子樹脂膜、7:ボンディングワイヤ
、8:リードフレーム、9:熱硬化性樹脂、10:シリ
コン基板、 11: Si OL膜、12:ニッケルー
鉄薄膜パターン、13:接続用金電極、14:5i02
膜、15:ボンディングワイヤ、18:リードフレーム
、17:熱硬化性樹脂、S:磁気抵抗素子チップ。
FIGS. 1(A), CB), and (C) are a sectional view, a partially exploded perspective view, and a sectional view of a main part, respectively, showing an embodiment of the present invention, and FIGS. 2(A) and 2(B). (C) is a sectional view, a partially exploded perspective view, and a sectional view of a main part, respectively, showing an example of a conventional molded magnetoresistive element. In the figure, 1: silicon substrate, 2: SiO□ film, 3:
Nickel-iron thin film pattern, 4: Gold electrode for connection, 5:5
TO2 film, 6: polymer resin film, 7: bonding wire, 8: lead frame, 9: thermosetting resin, 10: silicon substrate, 11: Si OL film, 12: nickel-iron thin film pattern, 13: gold for connection Electrode, 14:5i02
film, 15: bonding wire, 18: lead frame, 17: thermosetting resin, S: magnetoresistive element chip.

Claims (1)

【特許請求の範囲】  磁性薄膜パターンが形成された磁気抵抗素子チツプを
リードフレーム支持体上に固定し、熱硬化性樹脂で外装
したモールド形磁気抵抗素子において、 前記磁気抵抗素子チツプ上に形成された高分子樹脂によ
る第1の緩衝層と、 前記リードフレーム支持体と磁気抵抗素子の間に介装さ
れた接着性を有する高分子樹脂による第2の緩衝層を設
けて、かつ熱硬化性樹脂によつて前記磁気抵抗素子チツ
プ面と同一高さに外装を施したことを特徴とするモール
ド形磁気抵抗素子。
[Scope of Claim] A molded magnetoresistive element in which a magnetoresistive element chip on which a magnetic thin film pattern is formed is fixed on a lead frame support and covered with a thermosetting resin, comprising: a first buffer layer made of a thermosetting resin; and a second buffer layer made of an adhesive polymer resin interposed between the lead frame support and the magnetoresistive element; and a second buffer layer made of a thermosetting resin. 1. A molded magnetoresistive element, characterized in that an exterior is provided at the same height as the chip surface of the magnetoresistive element.
JP60056951A 1985-03-20 1985-03-20 Mold type magnetic resistance element Pending JPS61216371A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60056951A JPS61216371A (en) 1985-03-20 1985-03-20 Mold type magnetic resistance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60056951A JPS61216371A (en) 1985-03-20 1985-03-20 Mold type magnetic resistance element

Publications (1)

Publication Number Publication Date
JPS61216371A true JPS61216371A (en) 1986-09-26

Family

ID=13041852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60056951A Pending JPS61216371A (en) 1985-03-20 1985-03-20 Mold type magnetic resistance element

Country Status (1)

Country Link
JP (1) JPS61216371A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6456663A (en) * 1987-08-26 1989-03-03 Otsuka Chemical Co Ltd Pyrazole derivative and herbicide containing said derivative as active ingredient
JPH0183332U (en) * 1987-11-24 1989-06-02

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6456663A (en) * 1987-08-26 1989-03-03 Otsuka Chemical Co Ltd Pyrazole derivative and herbicide containing said derivative as active ingredient
JPH0183332U (en) * 1987-11-24 1989-06-02

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