JP2993017B2 - Magnetic detector - Google Patents
Magnetic detectorInfo
- Publication number
- JP2993017B2 JP2993017B2 JP1294017A JP29401789A JP2993017B2 JP 2993017 B2 JP2993017 B2 JP 2993017B2 JP 1294017 A JP1294017 A JP 1294017A JP 29401789 A JP29401789 A JP 29401789A JP 2993017 B2 JP2993017 B2 JP 2993017B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetoresistive element
- semiconductor substrate
- detection device
- integrated circuit
- magnetic detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、磁気抵抗素子を用いた磁気検出装置に関す
るものである。Description: TECHNICAL FIELD The present invention relates to a magnetic detection device using a magnetoresistive element.
（従来の技術） 従来、磁気抵抗素子を用いた磁気検出装置が知られて
いる。この磁気検出装置は、例えば回転体の回転数の検
出や速度検出、またあるピッチで着磁された磁性体の読
み出しなどによく用いられる。(Prior Art) Conventionally, a magnetic detection device using a magnetoresistive element has been known. This magnetic detection device is often used, for example, for detecting the rotation speed and speed of a rotating body, and for reading a magnetic body magnetized at a certain pitch.
第２図に磁気検出装置の例を示す。この検出装置で
は、磁気抵抗素子を具備した回転検出装置２が用いられ
るようになっており、被検知体である円盤状の磁性体上
に交互に着磁された回転体１を回転させて磁気抵抗素子
に与える磁界の強さを検出して連続したパルスを得、こ
のパルスを用いて回転体の正確な位置を得ることや、回
転体の回転ムラを抑えることに使用している。FIG. 2 shows an example of the magnetic detection device. In this detection device, a rotation detection device 2 having a magnetoresistive element is used, and a rotating body 1 that is alternately magnetized on a disk-shaped magnetic body that is an object to be detected is rotated to produce a magnetic field. A continuous pulse is obtained by detecting the strength of the magnetic field applied to the resistance element, and the pulse is used to obtain an accurate position of the rotating body and to suppress rotation unevenness of the rotating body.
上記のような場合、従来は、 （１）磁気抵抗素子と電子回路とを別々に設けリード線
を用いて接続する （２）磁気抵抗素子のチップと電子回路のチップを同一
の基板上に取り付けワイヤーボンデングを用いて接続す
る 等の方法が用いられてきた。In the above case, conventionally, (1) a magnetoresistive element and an electronic circuit are separately provided and connected using a lead wire. (2) The chip of the magnetoresistive element and the chip of the electronic circuit are mounted on the same substrate. Methods such as connection using wire bonding have been used.
また、１チップ化されたものでは、 （３）電子回路と磁気抵抗素子を同一半導体基板上に並
べて配置し形成しアルミ配線等で接続するもの（第２回
センサシンポジウム予稿集、1982年（Proceeding of th
e 2nd Sensor Symposium,1982,pp.215〜217）参照）。In the case of a single chip, (3) an electronic circuit and a magnetoresistive element are arranged side by side on the same semiconductor substrate, formed and connected by aluminum wiring or the like (The 2nd Sensor Symposium Proceedings, 1982 (Proceeding of th
e 2nd Sensor Symposium, 1982, pp. 215-217)).
（４）電子回路を形成した半導体基板上に更に保護膜を
設け、上記保護膜上に磁気抵抗素子を形成し保護膜に穴
をあけて電気的に接続するもの（特公平１−13236号公
報参照）などが挙げられる。(4) A protective film is further provided on a semiconductor substrate on which an electronic circuit is formed, a magnetoresistive element is formed on the protective film, and holes are made in the protective film to electrically connect the protective films (Japanese Patent Publication No. 1-13236). Reference).
（発明が解決しようとする課題） 上記の従来例（１）及び（２）では、磁気抵抗素子の
出力インピーダンスが比較的高いために、配線を引き廻
すことに依る外部ノイズを拾い易い問題があり、組立上
も部品点数が多く不利であった。(Problems to be Solved by the Invention) In the above conventional examples (1) and (2), since the output impedance of the magnetoresistive element is relatively high, there is a problem that external noise due to routing of wiring is easily picked up. However, the number of parts is large in assembly, which is disadvantageous.
また、上記従来例（３）では、同一半導体基板上に並
べて作成するとチップ面積が大きくなり製品価格の面で
不利であることと、また従来例（４）の様に、電子回路
を形成した半導体基板上に層間絶縁膜を形成し該層間絶
縁膜上に磁気抵抗素子を形成する方法では、上記保護膜
の平坦性の問題、及び上記保護膜と磁気抵抗素子を形成
する金属との相性等の問題があり、実用性・量産性の面
で多くの問題がある。Further, in the above-mentioned conventional example (3), it is disadvantageous in terms of the product price that the chip area becomes large if they are formed side by side on the same semiconductor substrate, and also, as in the conventional example (4), In the method of forming an interlayer insulating film on a substrate and forming a magnetoresistive element on the interlayer insulating film, the flatness of the protective film, compatibility between the protective film and a metal forming the magnetoresistive element, etc. There are problems, and there are many problems in terms of practicality and mass productivity.
本発明の目的は、このような従来の問題を解決し、製
造工程を簡略化可能とし、生産性を向上させ、装置の小
型化や軽量化が行える磁気検出装置を提供することにあ
る。An object of the present invention is to solve such a conventional problem, to provide a magnetic detection device capable of simplifying a manufacturing process, improving productivity, and reducing the size and weight of the device.
（課題を解決するための手段） 本発明によれば、半導体基板の一方の面上に積層形成
された磁気抵抗素子と、この半導体基板の反対側の面に
積層形成されており磁気抵抗素子からの信号を処理する
ための集積回路と、磁気抵抗素子と集積回路とを電気的
に接続するスルーホールとを備えた磁気検出装置が提供
される。(Means for Solving the Problems) According to the present invention, a magneto-resistive element laminated on one surface of a semiconductor substrate and a magneto-resistive element laminated on an opposite surface of the semiconductor substrate, And a through-hole for electrically connecting the magnetoresistive element to the integrated circuit.
半導体基板の両面に形成された磁気抵抗素子及びその
信号処理用の集積回路をスルーホールで電気的に接続し
て一体形成していることにより、磁気検出装置の大幅な
小型化や軽量化が図れることはもとより、磁気抵抗素子
から集積回路までの信号経路長が著しく短い（半導体基
板の厚みのみである）ため、及びその信号経路が基板の
外部に現れないため、外部ノイズをほとんど拾うことが
ない。しかも、ウエハプロセスのみで磁気抵抗素子、そ
の信号処理回路及び両者の接続線路が一体的に形成され
るため、製造方法の大幅な簡略化と生産性の大幅な向上
が期待できる。Since the magnetoresistive elements formed on both surfaces of the semiconductor substrate and the integrated circuits for signal processing are electrically connected to each other through through holes and integrally formed, the size and weight of the magnetic detection device can be significantly reduced. In addition, since the signal path length from the magnetoresistive element to the integrated circuit is extremely short (only the thickness of the semiconductor substrate), and the signal path does not appear outside the substrate, almost no external noise is picked up. . In addition, since the magnetoresistive element, its signal processing circuit, and the connection line between them are integrally formed only by the wafer process, it is expected that the manufacturing method is greatly simplified and the productivity is greatly improved.
（実施例） 以下、本発明の一実施例を、図面により詳細に説明す
る。Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings.
本実施例の磁気検出装置の使用形態は、第２図に示す
態様と同様であり、磁気検出装置による検出動作は、前
述した従来の技術の説明を参照されたい。The mode of use of the magnetic detection device of this embodiment is the same as that shown in FIG. 2. For the detection operation by the magnetic detection device, refer to the description of the above-described conventional technology.
第３図は、本発明の実施例における磁気検出装置の制
御回路（信号処理回路）の例を示す図である。FIG. 3 is a diagram showing an example of a control circuit (signal processing circuit) of the magnetic detection device according to the embodiment of the present invention.
第３図において、MR1及びMR2は磁気抵抗素子、A1は比
較器、A0は比較器A1の出力端子、R1及びR2は電圧分圧用
抵抗、R3は利得設定抵抗である。In FIG. 3, MR1 and MR2 are magnetoresistive elements, A1 is a comparator, A0 is an output terminal of the comparator A1, R1 and R2 are voltage dividing resistors, and R3 is a gain setting resistor.
この制御回路の磁気抵抗素子MR1,MR2は、第２図に示
した回転検出装置２に装備されている。この回転検出装
置は、回転体の位置検出などの信号処理を行う集積回路
を含んだ磁気検出装置である。The magnetoresistive elements MR1 and MR2 of this control circuit are provided in the rotation detecting device 2 shown in FIG. This rotation detection device is a magnetic detection device including an integrated circuit that performs signal processing such as position detection of a rotating body.
以下、第３図の制御回路の動作を説明する。 Hereinafter, the operation of the control circuit of FIG. 3 will be described.
第２図に示す交互に着磁された円盤状の磁性体が回転
すると、第３図に於いて磁気抵抗素子MR1及びMR2の中点
電位Vaが変化する。また、電圧分圧用抵抗R1及びR2によ
って構成される電圧分圧回路の中点電位Vbは、変化しな
いので、比較器A1の差動入力にはVa−Vbの電圧が入力さ
れる。この結果、比較器A1の出力端子A0からの円盤状の
磁性体の着磁ピッチに応じた出力パルスが取り出せるこ
とになり、この信号を処理することにより回転数の制御
・回転角度の検出等が出来ることになる。When the alternately magnetized disk-shaped magnetic material shown in FIG. 2 rotates, the midpoint potential Va of the magnetoresistive elements MR1 and MR2 changes in FIG. Further, since the midpoint potential Vb of the voltage dividing circuit constituted by the voltage dividing resistors R1 and R2 does not change, the voltage Va−Vb is input to the differential input of the comparator A1. As a result, an output pulse corresponding to the magnetized pitch of the disk-shaped magnetic material can be obtained from the output terminal A0 of the comparator A1, and by controlling this signal, control of the rotation speed and detection of the rotation angle can be performed. You can do it.
また、磁気抵抗素子MR1及びMR2と電圧分圧用抵抗R1及
びR2の温度特性が異なるため周囲温度が変化すると、Va
−Vbの比較器A1に入力される電圧が変化することがあ
る。そのため、同一の種類の磁気抵抗素子を、R1及びR2
のかわりに使用してこの磁気抵抗素子を着磁された磁性
体の影響が無い所に配置すれば、正確に温度保証が可能
であり、しかも中点電位VaとVbのバラツキも補正可能と
なる。Also, when the ambient temperature changes because of the temperature characteristics of the magnetoresistive elements MR1 and MR2 and the voltage dividing resistors R1 and R2, Va
The voltage input to the comparator A1 of −Vb may change. Therefore, the same type of magnetoresistive element is connected to R1 and R2
If this element is used instead of this and placed in a place where there is no influence of the magnetized magnetic material, the temperature can be accurately assured, and the dispersion of the midpoint potentials Va and Vb can be corrected. .
第１図（ａ）〜（ｅ）は、本発明の実施例を示す磁気
検出装置の製造工程図である。1 (a) to 1 (e) are manufacturing process diagrams of a magnetic detection device showing an embodiment of the present invention.
第１図（ａ）〜（ｅ）において、10は半導体基板、11
は磁気抵抗素子のパッド、12は絶縁膜（絶縁層）、13,1
4は磁気抵抗素子膜、15はリードフレームである。1A to 1E, reference numeral 10 denotes a semiconductor substrate;
Is the pad of the magnetoresistive element, 12 is the insulating film (insulating layer), 13,1
4 is a magnetoresistive element film, and 15 is a lead frame.
以下、第１図（ａ）〜（ｅ）に従って、本磁気検出装
置の製造工程について説明する。Hereinafter, the manufacturing process of the present magnetic detection device will be described with reference to FIGS. 1 (a) to 1 (e).
第１図（ａ）において、シリコン等から成る半導体基
板10には第３図に示す比較器A1、利得設定抵抗R3、電圧
分圧用抵抗R1及びR2などが設けられている集積回路が形
成されている。そして、この集積回路にて前記磁気抵抗
素子MR1及びMR2からの信号の処理が行われる。1A, an integrated circuit provided with a comparator A1, a gain setting resistor R3, voltage dividing resistors R1 and R2 shown in FIG. 3 is formed on a semiconductor substrate 10 made of silicon or the like. I have. The signals from the magnetoresistive elements MR1 and MR2 are processed in this integrated circuit.
上記半導体基板10に対し第１図（ｂ）で示すように、
集積回路が形成された反対側の半導体基板面にパッド11
を除いてガラスもしくはSiO2等の絶縁物層（絶縁膜）12
がコーティングされる。As shown in FIG. 1B with respect to the semiconductor substrate 10,
Pad 11 is provided on the opposite side of the semiconductor substrate on which the integrated circuit is formed.
Excluding glass or insulating layer (insulating film) such as SiO 2 12
Is coated.
次に、上記絶縁膜12上に第１図（ｃ）で示すように、
Fe−Ni又はNi−Co等の合金より成る磁気抵抗素子膜13が
蒸着により形成され、またパッド11の部分にまで同様に
磁気抵抗素子膜13が蒸着されパッド部分と電気的に接続
される。Next, on the insulating film 12, as shown in FIG.
A magnetoresistive element film 13 made of an alloy such as Fe-Ni or Ni-Co is formed by vapor deposition, and the magnetoresistive element film 13 is similarly vapor-deposited up to the pad 11 to be electrically connected to the pad portion.
次に、エッチング工程により磁気抵抗素子膜13および
14が第１図（ｄ）に示すように、エッチング処理され所
要形状にパターンを形成する。Next, the magnetoresistive element film 13 and
14 is etched to form a pattern in a required shape as shown in FIG. 1 (d).
最後に、上記処理された半導体基板10は、第１図
（ｅ）に示すように、リードフレーム15上に搭載され、
チップ接着、および半導体基板10の集積回路側のパッド
と磁気抵抗素子のパッド11を半田付け等の手段を用いて
電気的に接続する。Finally, the processed semiconductor substrate 10 is mounted on a lead frame 15 as shown in FIG.
The chip bonding and the pad on the integrated circuit side of the semiconductor substrate 10 and the pad 11 of the magnetoresistive element are electrically connected by means such as soldering.
上記実施例では、半導体基板の両面に形成された磁気
抵抗素子及び集積回路を電気的に接続する手段としてリ
ードフレームを用いた例について説明したが、他の例と
しては、スルーホールや側面電極を用いることも考えら
れる。In the above embodiment, an example was described in which a lead frame was used as a means for electrically connecting a magnetoresistive element and an integrated circuit formed on both surfaces of a semiconductor substrate, but as another example, a through hole or a side electrode was used. It is also conceivable to use it.
（発明の効果） 以上詳細に説明したように、本発明の磁気検出装置
は、半導体基板の一方の面上に積層形成された磁気抵抗
素子と、この半導体基板の反対側の面に積層形成されて
おり磁気抵抗素子からの信号を処理するための集積回路
と、磁気抵抗素子と集積回路とを電気的に接続するスル
ーホールとを備えている。従って、ウエハプロセスのみ
で磁気抵抗素子、その信号処理回路及び両者の接続線路
が一体的に形成されるので、製造方法の大幅な簡略化と
生産性の大幅な向上が期待できる。また、半導体基板内
及びその一方の面上に、信号処理用集積回路及び磁気抵
抗素子を一体的に形成しているので、磁気検出装置全体
の大幅な小型化及び軽量化を図ることができる。さら
に、磁気抵抗素子から集積回路までの信号経路長が著し
く短い（半導体基板の厚みのみである）ため、及びその
信号経路が基板の外部に現れないため、外部ノイズをほ
とんど拾うことがない。これは、信号処理回路の簡素化
及び検出精度の向上にもつながる。(Effects of the Invention) As described in detail above, the magnetic detection device of the present invention includes a magnetoresistive element formed on one surface of a semiconductor substrate and a magnetoresistive element formed on the opposite surface of the semiconductor substrate. And an integrated circuit for processing a signal from the magnetoresistive element, and a through-hole for electrically connecting the magnetoresistive element to the integrated circuit. Therefore, the magnetoresistive element, its signal processing circuit, and the connection line between them are integrally formed only by the wafer process, so that the manufacturing method can be greatly simplified and the productivity can be greatly improved. Further, since the signal processing integrated circuit and the magnetoresistive element are integrally formed in the semiconductor substrate and on one surface thereof, it is possible to significantly reduce the size and weight of the entire magnetic detection device. Further, since the signal path length from the magnetoresistive element to the integrated circuit is extremely short (only the thickness of the semiconductor substrate) and the signal path does not appear outside the substrate, external noise is hardly picked up. This leads to simplification of the signal processing circuit and improvement of detection accuracy.
第１図は本発明の実施例を示す磁気検出装置の製造工程
図、 第２図は従来例および本発明についての回転円盤及び磁
気検出装置の配置態様を示す斜視図、 第３図は本発明の磁気検出装置における信号処理回路の
一例を示す図である。 1;回転円盤、2;磁気検出装置、 10;半導体基板、 11;磁気抵抗素子のパッド、12;絶縁膜、 13;磁気抵抗素子膜、14;磁気抵抗素子膜、 15;リードフレーム、 MR1,MR2;磁気抵抗素子、A1;比較器、 A0;出力端子、 R1,R2;電圧分圧用抵抗。1 is a manufacturing process diagram of a magnetic detection device showing an embodiment of the present invention, FIG. 2 is a perspective view showing an arrangement of a rotating disk and a magnetic detection device according to a conventional example and the present invention, and FIG. 3 is a present invention. FIG. 3 is a diagram illustrating an example of a signal processing circuit in the magnetic detection device of FIG. 1; rotating disk, 2; magnetic detector, 10; semiconductor substrate, 11; magnetoresistive element pad, 12; insulating film, 13; magnetoresistive element film, 14; magnetoresistive element film, 15; lead frame, MR1, MR2: magnetoresistive element, A1; comparator, A0; output terminal, R1, R2; resistor for voltage division.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) G01R 33/00 - 33/18 H01L 27/22 H01L 43/08 G01D 5/245 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. 6 , DB name) G01R 33/00-33/18 H01L 27/22 H01L 43/08 G01D 5/245
Claims (1)
磁気抵抗素子と、該半導体基板の反対側の面に積層形成
されており前記磁気抵抗素子からの信号を処理するため
の集積回路と、前記磁気抵抗素子と前記集積回路とを電
気的に接続するスルーホールとを備えたことを特徴とす
る磁気検出装置。1. A magnetoresistive element laminated on one surface of a semiconductor substrate and an integrated circuit laminated on an opposite surface of the semiconductor substrate for processing signals from the magnetoresistive element. And a through hole for electrically connecting the magnetoresistive element and the integrated circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1294017A JP2993017B2 (en) | 1989-11-14 | 1989-11-14 | Magnetic detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1294017A JP2993017B2 (en) | 1989-11-14 | 1989-11-14 | Magnetic detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03156391A JPH03156391A (en) | 1991-07-04 |
| JP2993017B2 true JP2993017B2 (en) | 1999-12-20 |
Family
ID=17802179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1294017A Expired - Fee Related JP2993017B2 (en) | 1989-11-14 | 1989-11-14 | Magnetic detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2993017B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2932824B2 (en) * | 1992-02-28 | 1999-08-09 | 日本電気株式会社 | Magnetoresistive sensor |
| JPH0832141A (en) * | 1994-07-11 | 1996-02-02 | Nec Corp | Artificial lattice thin film magnetic sensor |
| DE10009944A1 (en) * | 2000-03-02 | 2001-09-13 | Forschungszentrum Juelich Gmbh | Arrangement for measuring magnetic field comprises first layer and second layer having electrically conducting antiferromagnetic layer bordering soft magnetic layer |
| JP7262886B2 (en) * | 2017-07-21 | 2023-04-24 | 朝日インテック株式会社 | Ultra-compact high-sensitivity magnetic sensor |
-
1989
- 1989-11-14 JP JP1294017A patent/JP2993017B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03156391A (en) | 1991-07-04 |
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