JPS59152663A - Magnetic detector - Google Patents
Magnetic detectorInfo
- Publication number
- JPS59152663A JPS59152663A JP58027325A JP2732583A JPS59152663A JP S59152663 A JPS59152663 A JP S59152663A JP 58027325 A JP58027325 A JP 58027325A JP 2732583 A JP2732583 A JP 2732583A JP S59152663 A JPS59152663 A JP S59152663A
- Authority
- JP
- Japan
- Prior art keywords
- magneto
- comparator
- substrate
- magnetoresistive element
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000001514 detection method Methods 0.000 claims description 13
- 238000009966 trimming Methods 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract description 2
- 239000011521 glass Substances 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 230000007935 neutral effect Effects 0.000 abstract 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 abstract 1
- 229910017709 Ni Co Inorganic materials 0.000 abstract 1
- 229910003267 Ni-Co Inorganic materials 0.000 abstract 1
- 229910003262 Ni‐Co Inorganic materials 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
Landscapes
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、磁気抵抗素子を用いた磁気検出装置に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetic detection device using a magnetoresistive element.
磁気抵抗素子を用いた磁気検出装置が知られている。こ
の磁気検出装置は、例えば、回転体の停止制御を行なう
場合等に用いられる。第１図はこのような回転体の停止
制御を行なう磁気検出装置の１例を示している。Magnetic detection devices using magnetoresistive elements are known. This magnetic detection device is used, for example, when controlling the stoppage of a rotating body. FIG. 1 shows an example of a magnetic detection device that performs such stop control of a rotating body.
この例の検出装置では、磁気抵抗素子を具備した回転検
出器２が用いられるようになっていて、被検知体である
円盤状の７リクエーシヨンジエネレータ１を回転させる
ことにより、このフリクエーションジーネレータ１の、
交互に配列されたＮ極とＳ極とが、磁気抵抗素子に与え
る磁界の変化を検出して連続したパルスを得た上、この
パルスをカウントして回転体を所要の位置に停止させて
いる。In the detection device of this example, a rotation detector 2 equipped with a magnetoresistive element is used, and by rotating a disc-shaped 7-requestation generator 1, which is an object to be detected, this friction Nerator 1's
Alternately arranged north and south poles detect changes in the magnetic field applied to the magnetoresistive element to obtain continuous pulses, and these pulses are counted to stop the rotating body at a desired position. .
さて、このような磁気検出装置において、従来は、磁気
抵抗素子と、この素子からの信号を処理するための回路
とを電気的に接続する場合、磁気抵抗素子からリード線
を引き出してプリント基板上の回路に接続する方式が採
用されていた。Now, in such a magnetic detection device, conventionally, when electrically connecting a magnetoresistive element and a circuit for processing a signal from this element, a lead wire is drawn out from the magnetoresistive element and placed on a printed circuit board. A method of connecting to the circuit was adopted.
しかし乍ら、この従来例では、小信号線を比較的長く引
き回すために、磁気抵抗素ネの出力インピーダンスが高
くなり、外部ノイズを拾いやすい欠点があると共に、実
装面積や実装体積上、小型化や軽量化ができない欠点が
あった。However, in this conventional example, since the small signal line is routed relatively long, the output impedance of the magnetoresistive element is high, which has the disadvantage of easily picking up external noise. It also had the disadvantage that it could not be made lighter.
本発明は、このよう、な従来欠点を解消した磁気検出装
置を提供することを目的とする。An object of the present invention is to provide a magnetic detection device that eliminates such conventional drawbacks.
以下、第２図以降の各図をもって本発明を説明する。Hereinafter, the present invention will be explained with reference to the figures from FIG. 2 onwards.
第２図は本発明１実施例の磁気検出装置に係る制御回路
の１例を示していて、磁気抵抗素子は、ＭＲＩ、 ＭＢ
２． ＭＢ２． ＭＢ２ の順序で回転検出器２（第
１図参照）に装備されている。FIG. 2 shows an example of a control circuit related to the magnetic detection device according to the first embodiment of the present invention, in which the magnetoresistive element is used for MRI, MB
2. MB2. The rotation detector 2 (see FIG. 1) is equipped in the order MB2.
ここで、第１図に示すフリクエーションジエネレータ１
が回転すると、第２図において、磁気抵抗素子ＭＨＩ
、 ＭＢ２間の中点電圧ａに関し、比較器Ａ１には正弦
波の電圧が入力し、一方、トリミング抵抗Ｒ３，Ｒ４の
中点電圧Ｃに関し、分圧された電源電圧が基準電圧とし
て比較器Ａ１に“入力する。Here, the friction generator 1 shown in FIG.
When the magnetoresistive element MHI rotates, in FIG.
, MB2, a sine wave voltage is input to the comparator A1, while regarding the midpoint voltage C between the trimming resistors R3 and R4, the divided power supply voltage is input to the comparator A1 as a reference voltage. “Enter.
これに対し、比較器Ａ１の出力Ｓ１からは、波形整□形
された矩形波状の信号が出力し、この信号をカウントす
ることにより、回転体の停止制御等が行なわれる。On the other hand, the output S1 of the comparator A1 outputs a rectangular waveform signal whose waveform is squared, and by counting this signal, control for stopping the rotating body, etc. is performed.
一方、磁気抵抗素子ＭＲ３、ＭＢ２やトリミング抵抗Ｒ
５，Ｒ６や比較器Ａ２から成る他方の回路系も同様な機
能を達成し、比較器Ａ２から出力されるパルスは比較器
Ａ１から出力されるパルスに対し、位相上の進み又は遅
れを生じ、これにより、当該時点の回転方向が正方向で
あるか逆方向であるかの判別を行なうことができるよう
になっている。On the other hand, magnetoresistive elements MR3, MB2 and trimming resistor R
5, the other circuit system consisting of R6 and comparator A2 achieves a similar function, and the pulse output from comparator A2 leads or lags in phase with respect to the pulse output from comparator A1, This makes it possible to determine whether the rotational direction at that time is the forward direction or the reverse direction.
本発明の特徴とするところは、斯る磁気抵抗素子のパタ
ーンを形成した基板、と同一の基板上に、磁気抵抗素子
から得られる信号を処理する集積回路を設置すると共に
、この集積回路と、磁気抵抗素子とを上記基板上に設け
た配線パターンにより、電気的に接続することにある。The present invention is characterized in that an integrated circuit for processing signals obtained from the magnetoresistive element is installed on the same substrate as the substrate on which the pattern of the magnetoresistive element is formed, and this integrated circuit and The purpose is to electrically connect the magnetoresistive element to the magnetoresistive element using a wiring pattern provided on the substrate.
第３図はその具体的実施例を示していて、ガラス若し゛
くはシリコンの基板１０上には磁気抵抗素子パターン１
１と、信号処理回路を構成する集積回路１２とが設けら
れている。FIG. 3 shows a specific example of this, in which a magnetoresistive element pattern 1 is formed on a glass or silicon substrate 10.
1 and an integrated circuit 12 constituting a signal processing circuit.
磁気抵抗素子は、基板１０の表面に、Ｎｉ−Ｃｏ若しく
はＦｅ −Ｎｉ金属を数ミクロン程度の厚さで蒸着した
あとに、図のパターンのようにエツチングを行なう如く
して形成せられ、４箇の磁気抵抗素子で構成される。The magnetoresistive element is formed by depositing Ni--Co or Fe--Ni metal to a thickness of several microns on the surface of the substrate 10, and then etching it as shown in the pattern shown in the figure. It consists of magnetoresistive elements.
磁気抵抗素子ＭＲＩ 、 ＭＢ２は直列（第２図参照）
に接続され、磁気抵抗素子ＭＲ３、ＭＢ２も同じ、く直
列に接続され、ＭＨＩ、 ＭＢ２およびＭＢ２． ＭＢ
２はｂλの間隔で、ＭＲｌとＭＢ２とは一λの間隔で配
列されている。ここで、λはフリクエーションジエネレ
ータ１の着磁ピンチである。Magnetoresistive element MRI and MB2 are connected in series (see Figure 2)
, and magnetoresistive elements MR3 and MB2 are also connected in series, MHI, MB2 and MB2 . M.B.
2 is arranged at an interval of bλ, and MRl and MB2 are arranged at an interval of 1λ. Here, λ is the magnetization pinch of the friction generator 1.
磁気抵抗素子ＭＲＩ、 ＭＢ２の一方端には十の電源が
、磁気抵抗素子ＭＲ２，ＭＢ２の一方端には−の電源が
それぞれ配線パターンをもって接続されている。また、
磁気抵抗素子ＭＲＩ１ＭＲ２とＭＢ２． ＭＢ２との各
々の中点からは配線パターンＡ、Ｂがそれぞれ引出され
ている。A power supply of 10 is connected to one end of the magnetoresistive elements MRI and MB2, and a power supply of - is connected to one end of the magnetoresistive elements MR2 and MB2, respectively, with a wiring pattern. Also,
Magnetoresistive elements MRI1MR2 and MB2. Wiring patterns A and B are drawn out from each midpoint with MB2.
配線パターンは、基板上に銀ペースト又は銅はく等を形
成する如くして構成され、各配線パターンの他端にはラ
ンドがそれぞれ設けられている。The wiring patterns are formed by forming silver paste or copper foil on the substrate, and a land is provided at the other end of each wiring pattern.
なお、このランドには必要に応じて金メッキが施される
ようになっている。Note that this land is plated with gold if necessary.
基板ＩＯ上の磁気抵抗素子Ｎ重Ｉ乃至ＭＲ４の磁気抵抗
素子パターンに並べてダイボンディングされた集積回路
１２の端子部には、ボンディングワイヤを介して各配線
パターンが接続される。なお、第２図に示す抵抗Ｒ３乃
至Ｒ６は集積匝路内に設けられていて、この集積回路に
て増巾や波形整形が行なわれるようになっている。Each wiring pattern is connected via a bonding wire to the terminal portion of the integrated circuit 12 which is die-bonded in line with the magnetoresistive element patterns of magnetoresistive elements N layers I to MR4 on the substrate IO. Note that the resistors R3 to R6 shown in FIG. 2 are provided in an integrated circuit, and the integrated circuit performs width amplification and waveform shaping.
第４図は、抵抗Ｒ３乃至Ｒ６を抵抗パターンとして集積
回路とは別に基板上に設けた実施例を示すもので５あっ
て、中点電圧αとＣ（第２図参照）が相、等しくなるよ
うに抵抗Ｒ３＋ Ｒ４がレーザ光線等によりトリミング
されている。また、抵抗Ｒ５，Ｒ６の方も同様な理由で
トリミングされている。FIG. 4 shows an example in which resistors R3 to R6 are provided as a resistance pattern on a substrate separately from the integrated circuit, and the midpoint voltages α and C (see FIG. 2) are equal in phase. The resistors R3+R4 are trimmed by a laser beam or the like. Further, the resistors R5 and R6 are also trimmed for the same reason.
なお、上記各実施例において、配線パターンとしては、
磁気抵抗素子と同一の磁気抵抗材料で構成するようにし
ても構わない。In addition, in each of the above embodiments, the wiring pattern is as follows:
It may be made of the same magnetoresistive material as the magnetoresistive element.
以上本発明によれば、磁気抵抗素子と信号処理回路とが
同一基板上に設けられ、これらが配線パターンで同一基
板上に接続される構成となっていて、リード線などの引
回しがないため、外部ノイズを拾いに＜＜、また、磁気
抵抗素子が増加しても複雑な信号処理を行なうことがで
き、この種の磁気検出装置の小型化や軽量化をも図るこ
とができる。As described above, according to the present invention, the magnetoresistive element and the signal processing circuit are provided on the same substrate, and are connected on the same substrate by a wiring pattern, and there is no need to route lead wires. Moreover, even if the number of magnetoresistive elements is increased, complex signal processing can be performed by picking up external noise, and this type of magnetic detection device can be made smaller and lighter.
第１図は従来例および本発明をそれぞれ説明するのに用
いた、フリクエーションジエネレータと回転検出器との
配役態様を示に斜視図、第２図は本発明ｌ実施例の磁気
検出装置に係る制御回路の一例を示す図、第３図は本発
明１実施例の磁気検出装置の斜視図、第４図は別実施例
装置の平面図である。
１０・・・基板、１２・・・集積回路、ＭＨＩ、 ＭＢ
２． ＭＢ２． ＭＢ２・・磁気抵゛抗素子。
第１図
手続補正書（ｎ１
昭和５！（イ１′１ 月１０口
特許庁長官 若杉和夫 殿
１ 事件の表示
昭和５８年特許願第２７１１２５弓
２ 発明の名称
磁気検出装置
３ 補正をする者
事件どの関係 特許出願人
名 称 （２２３）株式会社三協精機製作所４
代 理 人
住 所 東京都世田谷区経堂４丁目５番４号明細書の「
発明の詳細な説明Ｊの欄
６補正の内容
（１）明細書第１頁第１４行の「ば、」の次に、「回転
体の回転速度制御や」を加入する。
（２）同頁第１６行の１体の」・の次に、「回転速度制
御やその」を加入する。
（３）同第２頁第５行の「体を」の次に、「一定の回転
速度に制御したり、あるいは回転体を」を加入する。
（４）同頁第１４行の「くなり」を、「いことがら」に
改める。
（５）同第４頁第１３行の「数ミクロン程度」を、「０
．６μｍ〜３μｍ位」に改める。
（６）同頁第１９行のｒｌ／’！、１ を、ｒｌ／４Ｊ
に改める。
（７）同頁第２０行のｒ１／４」 を、ｒｌ／８Ｊに改
める。FIG. 1 is a perspective view showing the arrangement of a friction generator and a rotation detector, which were used to explain the conventional example and the present invention, respectively, and FIG. 2 shows a magnetic detection device according to an embodiment of the present invention. FIG. 3 is a perspective view of a magnetic detection device according to a first embodiment of the present invention, and FIG. 4 is a plan view of another embodiment of the device. 10...Substrate, 12...Integrated circuit, MHI, MB
2. MB2. MB2... Magnetoresistive element. Figure 1 Procedural amendment (n1 Showa 5! (A1'1 October 1999) Commissioner of the Japan Patent Office Mr. Kazuo Wakasugi 1 Display of the case 1982 Patent application No. 271125 Bow 2 Name of the invention Magnetic detection device 3 Person making the amendment Case Which relationship Patent applicant name (223) Sankyo Seiki Seisakusho Co., Ltd. 4
Agent Address: 4-5-4 Kyodo, Setagaya-ku, Tokyo "
Contents of amendment in Column 6 of Detailed Description of the Invention J (1) In the 14th line of page 1 of the specification, after "ba", "rotational speed control of a rotating body" is added. (2) Add ``Rotation speed control and that'' next to ``.'' in line 16 of the same page. (3) Next to "body" in the fifth line of page 2, add "controlling the rotational speed to a constant speed or rotating body". (4) Change ``nari'' in line 14 of the same page to ``igotara.'' (5) “A few microns” on page 4, line 13 of the same page was changed to “0
．． 6 μm to 3 μm”. (6) rl/'! on line 19 of the same page. , 1, rl/4J
Changed to (7) "r1/4" on line 20 of the same page is changed to rl/8J.
Claims (1)
に、上記磁気抵抗素子から得られる信号を処理する集積
回路を設置すると共に、この集積回路と、上記磁気抵抗
素子とを、上記基板上に設けた配線パターンに″より、
電気的に接続したことを特徴とする磁気検出装置。An integrated circuit for processing signals obtained from the magnetoresistive element is installed on the same substrate as the one on which the pattern of the magnetoresistive element is formed, and this integrated circuit and the magnetoresistive element are placed on the substrate. According to the wiring pattern that was prepared,
A magnetic detection device characterized by being electrically connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58027325A JPS59152663A (en) | 1983-02-21 | 1983-02-21 | Magnetic detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58027325A JPS59152663A (en) | 1983-02-21 | 1983-02-21 | Magnetic detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59152663A true JPS59152663A (en) | 1984-08-31 |
Family
ID=12217919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58027325A Pending JPS59152663A (en) | 1983-02-21 | 1983-02-21 | Magnetic detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59152663A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02248708A (en) * | 1989-03-22 | 1990-10-04 | Koganei Ltd | Position detector for actuator |
| JPH0677557A (en) * | 1992-07-30 | 1994-03-18 | Mitsubishi Electric Corp | Hybrid intengrated circuit device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57104284A (en) * | 1980-12-19 | 1982-06-29 | Sharp Corp | Magnetic coupling element |
-
1983
- 1983-02-21 JP JP58027325A patent/JPS59152663A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57104284A (en) * | 1980-12-19 | 1982-06-29 | Sharp Corp | Magnetic coupling element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02248708A (en) * | 1989-03-22 | 1990-10-04 | Koganei Ltd | Position detector for actuator |
| JPH0677557A (en) * | 1992-07-30 | 1994-03-18 | Mitsubishi Electric Corp | Hybrid intengrated circuit device |
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