JPS61216323A - Electron image transfer process - Google Patents
Electron image transfer processInfo
- Publication number
- JPS61216323A JPS61216323A JP2560585A JP2560585A JPS61216323A JP S61216323 A JPS61216323 A JP S61216323A JP 2560585 A JP2560585 A JP 2560585A JP 2560585 A JP2560585 A JP 2560585A JP S61216323 A JPS61216323 A JP S61216323A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- film
- substrate
- mask pattern
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 12
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 229910001417 caesium ion Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 235000007575 Calluna vulgaris Nutrition 0.000 description 1
- -1 CsO Chemical class 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
電子像転写方法であって、転写と同じ真空中でマスクの
皮膜物質を補給することによりマスクの電子発生効率の
低下を防止するものである。DETAILED DESCRIPTION OF THE INVENTION [Summary] This is an electronic image transfer method, which prevents a decrease in the electron generation efficiency of the mask by replenishing the mask coating material in the same vacuum as the transfer.
本発明は、マスクに光を照射し、マスクパターンに応じ
た電子像を発生させ、これを試料に転写する方法に関す
る。The present invention relates to a method of irradiating a mask with light to generate an electronic image according to a mask pattern, and transferring this to a sample.
電子ビーム露光において、矩形電子ビームを複数シッフ
トくり返して試料の所望領域を露光する方法があるが、
この方法では露光用データ数が多く、又露光時間が多く
かかるため、スループ７トが上らない。In electron beam exposure, there is a method of repeatedly shifting a rectangular electron beam multiple times to expose a desired area of a sample.
This method requires a large amount of exposure data and takes a long exposure time, so the throughput cannot be increased.
そこでスルーブツトを向上させるために、予め露光すべ
きパターンに対応したマスクパターンを育するマスクを
用し？、ここに光を照射してマスクパターンに応じた電
子像を発生させ、この像を試料に転写する方法が提案さ
れている。Therefore, in order to improve throughput, we use a mask that grows a mask pattern corresponding to the pattern to be exposed in advance. A method has been proposed in which light is irradiated here to generate an electronic image according to the mask pattern, and this image is transferred to the sample.
この方法は、前記方法のように所望領域を塗りつぶして
行くのではなく、一度にパターンが転写されるので、露
光が高速になり、スループットが向上する。In this method, the pattern is transferred all at once instead of filling in the desired area as in the previous method, so that exposure becomes faster and throughput is improved.
従来このような電子像転写方法においては、マスクとし
てガラス基板上にクロムのマスクパターンが形成され、
ガラス基板上およびマスクパターン上にヨウ化セシウム
（Ｃｓｌ）皮膜が被着されたものを用いていた。このよ
うなマスクのガラス背面から紫外線を照射すると、クロ
ムのマスクパターンのないＣｓｌ膜の部分から電子が放
出される。Conventionally, in such an electronic image transfer method, a chrome mask pattern is formed on a glass substrate as a mask.
A cesium iodide (Csl) film was used on a glass substrate and a mask pattern. When ultraviolet rays are irradiated from the back side of the glass of such a mask, electrons are emitted from the portion of the Csl film where there is no chromium mask pattern.
Ｃｓｌ膜は大気中でも安定であり、取い扱いが容易であ
る。Csl films are stable even in the atmosphere and are easy to handle.
しかし、Ｃｓ［ｌｉを用いたマスクでは照射して電子を
放出させる紫外光源としては、低圧の水銀ランプが用い
られるが、その出力が小さいため、放出される電子量が
少ない、又、この紫外線に対するレンズが存在しないた
め、光を収束させられない。However, in masks using Cs[li, a low-pressure mercury lamp is used as an ultraviolet light source to irradiate and emit electrons, but its output is low, so the amount of electrons emitted is small, and Since there is no lens, light cannot be focused.
さらにＣｓｌ膜は光照射によって電子を放出し続けるた
め、劣化して電子発生効率が低下するが、劣化したＣｓ
ｌ膜は水によって洗い落とし、新たに膜を付は直さなけ
ればならない。Furthermore, since the Csl film continues to emit electrons due to light irradiation, it deteriorates and the electron generation efficiency decreases.
The membrane must be washed off with water and replaced with a new membrane.
これに対してマスクとしてガリウム・ヒｆｆｉ（ＣａＡ
ｓ）Ｍ板上に白金（Ｐｔ）のマスクパターンが形成され
・マスクパターン上およびこれに覆われない基板上に基
板の電子親和力を低下させて電子の放出を容易にするた
めのセシウム（Ｃｓ）ＩＩを被着したものがある。On the other hand, gallium hyffi (CaA) is used as a mask.
s) A platinum (Pt) mask pattern is formed on the M plate, and cesium (Cs) is placed on the mask pattern and on the substrate not covered by this to reduce the electron affinity of the substrate and facilitate the emission of electrons. Some are coated with II.
このマスクはＣｓＩＩ＊側からタングステンランプ等を
光源とする可視光を照射し、電子を放出する。This mask is irradiated with visible light from a tungsten lamp or the like as a light source from the CsII* side and emits electrons.
タングステンランプ等は上記水銀ランプに比べて十分に
大きな出力が得られるので十分な強度の電子が得られ、
またレンズにより光を収束させることができる。Tungsten lamps etc. can provide a sufficiently large output compared to the mercury lamps mentioned above, so electrons of sufficient intensity can be obtained.
Also, the lens can converge the light.
ｃ本発明が解決しようとする問題点〕
ところがこのようなマスクでは、真空容器内の残留ガス
（例えば０２ 、Ｈ２０，Ｃｏ等）や試料に塗布された
レジストなどとＣｓが反応し、Ｃｓ膜が減少して電子の
発生効率が低下する欠点がある。[Problems to be Solved by the Present Invention] However, in such a mask, Cs reacts with the residual gas in the vacuum container (for example, 02, H20, Co, etc.) and the resist applied to the sample, causing the Cs film to deteriorate. There is a drawback that the electron generation efficiency decreases.
本発明はこのような欠点を解消し、マスクの電子発生効
率の低下を防止することを貝的とする。It is an object of the present invention to overcome these drawbacks and to prevent a decrease in the electron generation efficiency of the mask.
第１図は、本発明の詳細な説明するための図である。真
空容Ｓｌ内に基体２表面にマスクパターン３が形成され
、それらを覆うＣｓ等の皮１ｊ！４を有するマスク５の
皮膜４側から光源６から出た光７が照射され、マスク５
から電子８が放出されて試料９に電子像が転写される。FIG. 1 is a diagram for explaining the present invention in detail. A mask pattern 3 is formed on the surface of the substrate 2 in the vacuum volume Sl, and a skin 1j of Cs etc. covers it! The light 7 emitted from the light source 6 is irradiated from the film 4 side of the mask 5 having the mask 5.
Electrons 8 are emitted from the sample 9, and an electron image is transferred to the sample 9.
この同じ真空中にＣｓ等の皮膜物質源１０を設けておき
、皮膜物質がマスク５表面に補給されるようにする。A source 10 of a coating material such as Cs is provided in this same vacuum so that the coating material is supplied to the surface of the mask 5.
これにより、マスク表面には皮膜物質が補給されるので
、マスクの電子発生効率の低下を防止することができる
。As a result, the surface of the mask is replenished with the coating material, so that it is possible to prevent the electron generation efficiency of the mask from decreasing.
第２図は本発明の通用される電子像転写装置のブロック
図を示す。FIG. 2 shows a block diagram of an electronic image transfer apparatus to which the present invention is applied.
２１はマスク用サブチャンバ、２２は転写が行ねれるメ
インチャンバ、２３はマスク用サブチャンバ、２４はウ
ニ゛ハ用サブチャンバ、ｖＩ 〜■６はバルブを示す
。21 is a mask subchamber, 22 is a main chamber in which transfer is performed, 23 is a mask subchamber, 24 is a unifer subchamber, and vI to (6) are valves.
初め大気圧となっているマスク用サブチャンバ２１内に
バルブＶｌ を開いてＰ型ＧａＡｓｄ基板上にｐｔを
バターニングしたものを入れバルブＶ／を閉じた後、真
空ポンプにより真空引きする。ＧａＡｓ基板上の汚染不
純物を除去するためにサブチャンバ２１にアルゴンガス
とマイクロ波が導入される。さらに、サブチャンバ２１
内にはヒータが設けられ基板は６００℃以上に加熱され
てＧａＡｓの酸化膜を蒸発させる。Initially, a valve Vl is opened in the mask subchamber 21, which is at atmospheric pressure, and a P-type GaAsd substrate patterned with PT is put therein, and after the valve V/ is closed, it is evacuated by a vacuum pump. Argon gas and microwaves are introduced into the subchamber 21 to remove contaminating impurities on the GaAs substrate. Furthermore, the subchamber 21
A heater is provided inside and the substrate is heated to 600° C. or higher to evaporate the GaAs oxide film.
サブチャンバ２１をｌＸｌ０ Ｔｏｒｒ程度に真空引
きした後、サブチャンバ２１内に設けられたＣｓ源から
発生するＣｓイオンあるいは外部から導入されたＣｓイ
オンが所定の電界の下で基板およびｐｔパターン上に被
着される。After the subchamber 21 is evacuated to approximately 1X10 Torr, Cs ions generated from a Cs source provided in the subchamber 21 or Cs ions introduced from the outside are applied to the substrate and the PT pattern under a predetermined electric field. It will be worn.
こうしてマスクが完成するとバルブｖ２ を開けて予め
ｌＸｌ０ Ｔｏｒｒ程度に真空引きされたメインチャ
ンバ２２内にマスクを移し、マスクホルダにセットする
。一方、電子像が転写されるウェハはウェハ用サブチャ
ンバ２４からバルブＶ。When the mask is completed in this way, the valve v2 is opened, the mask is moved into the main chamber 22 which has been evacuated to about 1X10 Torr, and is set in the mask holder. On the other hand, the wafer to which the electronic image is transferred is transferred from the wafer subchamber 24 to the valve V.
を開けてチャンバ２２内のウェハホルダにセントされる
。ここでマスクに対して光を照射するとマスクからマス
クパターンに応じた電子像が発生し、ウェハに照射され
る。The wafer is inserted into the wafer holder inside the chamber 22. When the mask is irradiated with light, an electronic image corresponding to the mask pattern is generated from the mask and is irradiated onto the wafer.
こうして転写が終わったウェハはウェハ用サブチャンバ
２４を介して大気中に取り出される。The wafer after the transfer is taken out into the atmosphere via the wafer subchamber 24.
マスク用サブチャンバ２３は、予備のマスクあるいはパ
ターンの異なるマスクの保管用に用いられる。The mask subchamber 23 is used for storing spare masks or masks with different patterns.
次に本発明に関わるメインチャンバ２２の詳細を第３図
に示す。Next, details of the main chamber 22 related to the present invention are shown in FIG.
転写部の上下には磁石３１．３２が設けられ、Ｎ極とＳ
極か対向して磁場を形成している。Magnets 31 and 32 are provided above and below the transfer section, with N and S poles.
The poles oppose each other to form a magnetic field.
また、磁石３１側には保持部材３３を介してマスクホル
ダ３４が取付けられ、ここにマスク３５が設置される。Further, a mask holder 34 is attached to the magnet 31 side via a holding member 33, and a mask 35 is installed here.
マスクの周囲には電極３５．その下方に電橋３７が設け
られ試料までの電界の乱れをなくして一様な電界を得る
ようにしている。Around the mask are electrodes 35. An electric bridge 37 is provided below it to eliminate disturbances in the electric field up to the sample and to obtain a uniform electric field.
３８は試料としてのウェハを示し、これはステージ３９
に設けられたウェハホルダ４０に取付けられる。38 shows a wafer as a sample, which is on stage 39
It is attached to a wafer holder 40 provided in the.
光ガイド４１．４２からはチャンバ外部に設けられた図
示しないタングステンランプからの光（波長４０００〜
５ｏｏｏ人）が導入され、電極３７の表面で反射してマ
スク３５に照射される。The light guides 41 and 42 emit light from a tungsten lamp (not shown) provided outside the chamber (wavelength 4000~
500 people) is introduced, reflected from the surface of the electrode 37, and irradiated onto the mask 35.
これによってマスク３５からマスクパターンに応じた電
子４３が発生し、電子像がウェハに転写される。As a result, electrons 43 are generated from the mask 35 in accordance with the mask pattern, and an electron image is transferred onto the wafer.
ステージ３９は転写時の停止と非転写時の移動を行う、
いわゆるステップ・アンド・リピート方式を裸馬してお
り、機械的な精度によってウェハが位置決めされる。The stage 39 stops during transfer and moves during non-transfer.
It uses a so-called step-and-repeat method, and the wafer is positioned with mechanical precision.
そこでより高精度に転写を行うためにウェハに位置合せ
マークを設け、電子をここに照射し、反射電子や二次電
子を検知器４４．４５で検知して位置ずれ量を検出し、
偏向器４６．４７で電子４３を偏向して転写位置の補正
を行う。Therefore, in order to perform transfer with higher precision, alignment marks are provided on the wafer, electrons are irradiated onto these marks, and reflected electrons and secondary electrons are detected by detectors 44 and 45 to detect the amount of positional deviation.
The electrons 43 are deflected by deflectors 46 and 47 to correct the transfer position.
本発明の一つの実施例として、マスク３５の近くにＣ５
ｆＡ４８を設けてこれを加熱し、かつマスク３５との間
に電界を印加してＣｓイオンを転写している間にもステ
ージ移動時にも常時マスクに吸着させる。In one embodiment of the invention, a C5 near the mask 35
An fA 48 is provided and heated, and an electric field is applied between it and the mask 35 so that the Cs ions are constantly attracted to the mask both during transfer and when the stage is moved.
これによりマスク表面は常にＣｓにより適切な反覆度で
反覆され、電子の発生効率が維持される。As a result, the mask surface is always coated with Cs at an appropriate degree of repetition, and electron generation efficiency is maintained.
第２の実施例としては第４図に示すように磁石内にＣｓ
［４８を設け、ウェハ交換のためにステージが移動して
いる間にこれを加熱してＣｓイオンを上方に向かって発
生させ、走査用偏向器４８゜４９によりマスク３５表面
に対してＣｓイオンを与える。尚、以上の説明において
基体はＣａＡｓの池に他のｍ−ｖ族半導体やＳｉでもよ
く、皮膜としてはＣｓの他にＣｓＯ，Ｂａ、ＢａＯなど
のアルカリ金属、アルカリ土類金属、又はそれらの酸化
物、ハロゲン化物を用いてもよい。As a second embodiment, as shown in FIG.
[48 is provided, and while the stage is moving for wafer exchange, it is heated to generate Cs ions upward, and the Cs ions are applied to the surface of the mask 35 using a scanning deflector 48 and 49. give. In the above description, the substrate may be CaAs, other m-v group semiconductors, or Si, and the film may be made of alkali metals such as CsO, Ba, BaO, alkaline earth metals, or oxidation thereof in addition to Cs. A compound or a halide may also be used.
（発明の効果〕
以上説明したように、本発明によれば、マスクの皮膜が
補給されるので、マスクの電子発生効率が維持され、電
子像の転写が効率的に行われる。(Effects of the Invention) As described above, according to the present invention, since the film of the mask is replenished, the electron generation efficiency of the mask is maintained, and the transfer of the electronic image is efficiently performed.
′ 第１図は、本発明の詳細な説明する図、第２図は
、電子像転写装置を説明する図、第３図は、本発明の一
実施例を説明する図、第４ｒＸＪは、本発明の他の実施
例を説明する図である。
図において、１は真空容器、２は基体、３はマスク、４
は皮膜、５はマスク、７は光、８は電子、１０は皮膜物
質源を示す。
杢発明−喪点を説明する図
第 １ 図
電子ｆ線転写に１のブロー、り図
本発明のイ七の宴掩例（説明するための３第 ４ 図' Figure 1 is a diagram explaining the present invention in detail, Figure 2 is a diagram explaining an electronic image transfer device, Figure 3 is a diagram explaining an embodiment of the present invention, and 4rXJ is a diagram explaining the present invention. FIG. 7 is a diagram illustrating another embodiment of the invention. In the figure, 1 is a vacuum container, 2 is a substrate, 3 is a mask, and 4
5 is a film, 5 is a mask, 7 is light, 8 is an electron, and 10 is a film material source. Figure 1 to explain the heather invention - Mourning point Figure 1 Blow in electronic f-ray transfer, Figure 4
Claims (3)
、該マスクパターン（３）および該基体（２）上に該基
体（２）の電子親和力を低下させるための皮膜（４）が
形成されたマスク（５）に光（７）を照射して該マスク
（５）から該マスクパターン（３）に応じて生じた電子
像（８）を試料（９）へ照射する転写と該マスク（５）
に対する皮膜物質の補給とを同じ真空中で行うことを特
徴とする電子像転写方法。(1) A mask pattern (3) is formed on the substrate (2), and a film (4) for reducing the electron affinity of the substrate (2) is provided on the mask pattern (3) and the substrate (2). Transfer of irradiating the formed mask (5) with light (7) and irradiating the electron image (8) generated from the mask (5) according to the mask pattern (3) onto the sample (9); and the mask. (5)
An electronic image transfer method characterized in that replenishment of a film material and replenishment of a coating material are performed in the same vacuum.
行うことを特徴とする特許請求の範囲第１項記載の電子
像転写方法。(2) The electronic image transfer method according to claim 1, characterized in that the coating material is replenished during the transfer of the electronic image (8).
うことを特徴とする特許請求の範囲第１行記載の電子像
転写方法。(3) The electronic image transfer method according to claim 1, wherein the coating material is replenished when the sample (8) is transferred.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2560585A JPS61216323A (en) | 1985-02-13 | 1985-02-13 | Electron image transfer process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2560585A JPS61216323A (en) | 1985-02-13 | 1985-02-13 | Electron image transfer process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61216323A true JPS61216323A (en) | 1986-09-26 |
| JPH0210565B2 JPH0210565B2 (en) | 1990-03-08 |
Family
ID=12170531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2560585A Granted JPS61216323A (en) | 1985-02-13 | 1985-02-13 | Electron image transfer process |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61216323A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5936928A (en) * | 1982-08-25 | 1984-02-29 | Toshiba Corp | Electron beam transferring apparatus |
| JPS59227122A (en) * | 1983-05-25 | 1984-12-20 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Method of producing electronic lithographic mask and device therefor |
-
1985
- 1985-02-13 JP JP2560585A patent/JPS61216323A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5936928A (en) * | 1982-08-25 | 1984-02-29 | Toshiba Corp | Electron beam transferring apparatus |
| JPS59227122A (en) * | 1983-05-25 | 1984-12-20 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Method of producing electronic lithographic mask and device therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0210565B2 (en) | 1990-03-08 |
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