JPS61215935A - 半導体圧力変換器 - Google Patents
半導体圧力変換器Info
- Publication number
- JPS61215935A JPS61215935A JP5774885A JP5774885A JPS61215935A JP S61215935 A JPS61215935 A JP S61215935A JP 5774885 A JP5774885 A JP 5774885A JP 5774885 A JP5774885 A JP 5774885A JP S61215935 A JPS61215935 A JP S61215935A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- voltage
- zero
- gauge
- span
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 239000012535 impurity Substances 0.000 claims abstract description 7
- 230000003321 amplification Effects 0.000 claims description 11
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 11
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 2
- 230000008859 change Effects 0.000 abstract description 15
- 238000010586 diagram Methods 0.000 description 15
- 239000013078 crystal Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
- G01L9/065—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices with temperature compensating means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5774885A JPS61215935A (ja) | 1985-03-22 | 1985-03-22 | 半導体圧力変換器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5774885A JPS61215935A (ja) | 1985-03-22 | 1985-03-22 | 半導体圧力変換器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61215935A true JPS61215935A (ja) | 1986-09-25 |
JPH0445060B2 JPH0445060B2 (enrdf_load_stackoverflow) | 1992-07-23 |
Family
ID=13064513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5774885A Granted JPS61215935A (ja) | 1985-03-22 | 1985-03-22 | 半導体圧力変換器 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61215935A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0928414B1 (en) * | 1996-09-27 | 2002-01-02 | Honeywell Inc. | Compensation technique for resistive bridge |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5663227A (en) * | 1979-10-30 | 1981-05-29 | Toshiba Corp | Pressure detecting device |
JPS5862533A (ja) * | 1981-09-18 | 1983-04-14 | ドワイア−・インストウルメンツ・インコ−ポレ−テツド | 圧力計 |
JPS58182529A (ja) * | 1982-04-19 | 1983-10-25 | Toshiba Corp | 半導体圧力変換装置 |
JPS59122923A (ja) * | 1982-12-28 | 1984-07-16 | Toshiba Corp | 圧力伝送器 |
-
1985
- 1985-03-22 JP JP5774885A patent/JPS61215935A/ja active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5663227A (en) * | 1979-10-30 | 1981-05-29 | Toshiba Corp | Pressure detecting device |
JPS5862533A (ja) * | 1981-09-18 | 1983-04-14 | ドワイア−・インストウルメンツ・インコ−ポレ−テツド | 圧力計 |
JPS58182529A (ja) * | 1982-04-19 | 1983-10-25 | Toshiba Corp | 半導体圧力変換装置 |
JPS59122923A (ja) * | 1982-12-28 | 1984-07-16 | Toshiba Corp | 圧力伝送器 |
Also Published As
Publication number | Publication date |
---|---|
JPH0445060B2 (enrdf_load_stackoverflow) | 1992-07-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3071202B2 (ja) | 半導体圧力センサの増巾補償回路 | |
US4414853A (en) | Pressure transmitter employing non-linear temperature compensation | |
US4480478A (en) | Pressure sensor employing semiconductor strain gauge | |
US5507171A (en) | Electronic circuit for a transducer | |
JPS6144242B2 (enrdf_load_stackoverflow) | ||
JPS597928B2 (ja) | ストレンゲ−ジ交換器信号調整回路装置 | |
JPH02257017A (ja) | 温度補償回路 | |
JPH0777266B2 (ja) | 半導体歪み検出装置 | |
US4800759A (en) | Semiconductor pressure converter | |
US6101883A (en) | Semiconductor pressure sensor including a resistive element which compensates for the effects of temperature on a reference voltage and a pressure sensor | |
JPH0425488B2 (enrdf_load_stackoverflow) | ||
JPS61215935A (ja) | 半導体圧力変換器 | |
JPH11271163A (ja) | 圧力計の較正方法及び装置 | |
RU2165602C2 (ru) | Полупроводниковый датчик давления | |
JPH0445061B2 (enrdf_load_stackoverflow) | ||
JPH0455542B2 (enrdf_load_stackoverflow) | ||
JPS6222272B2 (enrdf_load_stackoverflow) | ||
JPH04155233A (ja) | 圧力センサの温度特性の補正方法 | |
JPS61215934A (ja) | 半導体圧力変換器 | |
JPH0273104A (ja) | 半導体センサの温度補償回路 | |
JPH04213020A (ja) | センサアセンブリおよびその製造方法 | |
JPH0682844B2 (ja) | 半導体歪変換装置 | |
JP2792522B2 (ja) | 半導体センサ用信号処理回路 | |
JPH0368830A (ja) | 半導体圧力センサの温度補償回路 | |
JPH11304617A (ja) | 半導体センサ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |