JPS61213374A - Jig - Google Patents
JigInfo
- Publication number
- JPS61213374A JPS61213374A JP5232285A JP5232285A JPS61213374A JP S61213374 A JPS61213374 A JP S61213374A JP 5232285 A JP5232285 A JP 5232285A JP 5232285 A JP5232285 A JP 5232285A JP S61213374 A JPS61213374 A JP S61213374A
- Authority
- JP
- Japan
- Prior art keywords
- jig
- wafers
- resistant member
- heat
- foreign matter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
- C04B41/5035—Silica
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
おける拡散またはCVD工程等に用いて効果のある技術
に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a technique that is effective when used in a diffusion or CVD process, etc.
半導体装置の製造過程においてウェハを取り扱うために
は石英を用いて作られた治具を利用することが多い。In the process of manufacturing semiconductor devices, jigs made of quartz are often used to handle wafers.
ところが、石英製の治具は重さや外力に対して比較的弱
いという欠点があり、たとえばウェハを多数枚保持する
、いわゆるボートあるいはフォークと呼ばれる治具では
ウェハの重さで治具が曲がってウェハが取り扱い中に治
具から落下する等の問題のあることが本発明者によって
見い出された。However, quartz jigs have the disadvantage of being relatively weak against weight and external forces. For example, in jigs called boats or forks that hold a large number of wafers, the weight of the wafers can bend the jigs and cause the wafers to fall. The inventor has discovered that there are problems such as falling from the jig during handling.
そこで、石英製の治具中に補強材を入れることも考えら
れるが、補強材を入れるだけでは治具と補給材との間に
隙間が生じたり、異物が発生し易く、また加工も困難で
ある等の問題があることを本発明者は見い出した。Therefore, it is possible to put a reinforcing material into the quartz jig, but if only the reinforcing material is inserted, a gap will be created between the jig and the supply material, foreign matter will easily occur, and machining will be difficult. The inventors have discovered that there are certain problems.
なお、拡散工程で用いる治具については、株式%式% 記載されている。In addition, regarding the jig used in the diffusion process, the stock% formula% Are listed.
本発明の目的は、大きな強度を得ることのできる治具を
提供することにある。An object of the present invention is to provide a jig that can obtain high strength.
本発明の他の目的は、異物の発生を防止できる治具を提
供することにある。Another object of the present invention is to provide a jig that can prevent the generation of foreign matter.
本発明の他の目的は、加工が簡単で、所望の形状に形成
できる治具を提供することにある。Another object of the present invention is to provide a jig that is easy to process and can be formed into a desired shape.
本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.
本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、次の通りである。A brief overview of typical inventions disclosed in this application is as follows.
すなわち、高融点金属、セラミックス焼結体などの耐熱
性部材上に高純度のSingを被着することにより、高
強度の治具を得ることができ、異物の発生を防止し、ま
た容易に加工することができる。In other words, by depositing high-purity Sing on a heat-resistant member such as a high-melting point metal or ceramic sintered body, a high-strength jig can be obtained, the generation of foreign matter can be prevented, and it can be easily processed. can do.
〔実施例1〕
第1図は本発明の一実施例による治具を示す正面図であ
る。[Embodiment 1] FIG. 1 is a front view showing a jig according to an embodiment of the present invention.
本実施例1の治具は半導体装置の製造過程における拡散
工程で用いられる拡散炉(図示せず)内にウェハ1を搬
入、搬出するために使用されるフォーク2である。The jig of the first embodiment is a fork 2 used to carry a wafer 1 into and out of a diffusion furnace (not shown) used in a diffusion process in the manufacturing process of semiconductor devices.
このフォーク2は、たとえばアルミナ(AI□03)ま
たはシリコンカーバイド(SiC)の如き高融点金属、
セラミックス焼結体などの耐熱性部材で形成された本体
3上に、高純度のSiC2層4を被着してなる。(図示
便宜上、SiO□層4は薄膜であるため、点線領域で示
しである。このことは第1図から第3図を通して同一で
ある。)この実施例によるフォーク2は、本体3が高融
点金属で形成されていることにより、ウェハ3を多数s
!置しても十分な強度を得ることができる上に、加工が
容易であり、しかも高純度のSiO□層4を被着されて
いることにより、異物の発生を防止し、またエツチング
液等が本体3に浸透することも防止できる。This fork 2 is made of a high melting point metal such as alumina (AI□03) or silicon carbide (SiC).
A high-purity SiC2 layer 4 is deposited on a main body 3 made of a heat-resistant member such as a ceramic sintered body. (For convenience of illustration, since the SiO□ layer 4 is a thin film, it is indicated by a dotted line area. This is the same throughout FIGS. 1 to 3.) In the fork 2 according to this embodiment, the main body 3 has a high melting point. By being made of metal, a large number of wafers 3 can be
! In addition to being able to obtain sufficient strength even when placed, it is easy to process, and because it is coated with a high-purity SiO□ layer 4, it prevents the generation of foreign matter and is easy to use with etching solutions. Penetration into the main body 3 can also be prevented.
次に、本実施例の治具の形成方法について説明する。Next, a method for forming the jig of this example will be explained.
まず、フォーク2の本体3はAl1103またはSiC
により所望の形状に形成される。First, the body 3 of the fork 2 is made of Al1103 or SiC.
is formed into a desired shape.
次いで、この本体3の周囲にSiO2を付着させる。こ
のSiO□は加熱溶融したS’i0.を図示しないノズ
ルから本体3上に吹き付けてもよく、あるいは石英ガラ
スウールを適宜の方法で付着させてもよい。Next, SiO2 is deposited around the main body 3. This SiO□ is S'i0. may be sprayed onto the main body 3 from a nozzle (not shown), or quartz glass wool may be attached by an appropriate method.
その後、本体3を図示しない炉内でたとえば1300℃
程度の高温に加熱することにより、本体3上にはSiO
□層4がコーティングされる。Thereafter, the main body 3 is placed in a furnace (not shown) at a temperature of, for example, 1300°C.
By heating the main body 3 to a high temperature, SiO
□Layer 4 is coated.
なお、加熱溶融後のSingを本体3上に吹き付ける場
合には、その後の加熱をしなくてもSing層4を本体
3上に被着することもできる。In addition, when spraying the Sing after heating and melting onto the main body 3, the Sing layer 4 can also be deposited on the main body 3 without further heating.
〔実施例2〕
第2図は本発明の他の実施例による治具の斜視図である
。[Embodiment 2] FIG. 2 is a perspective view of a jig according to another embodiment of the present invention.
本実施例2では、治具は半導体装置の製品収納このマガ
ジン5の本体6はAIzOsまたはSiC等の高融点金
属、セラミックス焼結体などの耐熱性部材で形作られて
おり、この本体6上には高純度のSiO□層7が被着さ
れている。Sin。In the second embodiment, the jig is used to store products of semiconductor devices. A high purity SiO□ layer 7 is deposited. Sin.
層7の被着は前記実施例1におけるSiO□層4(1)
、高融点金属、セラミックス焼結体などの耐熱性部材上
に高純度のS i Ozを被着したことにより、大きな
強度の治具を得ることができる。The layer 7 is deposited on the SiO□ layer 4 (1) in Example 1 above.
By depositing high-purity SiOz on a heat-resistant member such as a high melting point metal or a ceramic sintered body, a jig with high strength can be obtained.
(21,S i Ofの被着により、異物の発生を防止
することができる。(21, By adhering S i Of, the generation of foreign matter can be prevented.
(3)、高融点金属、セラミックス焼結体などの耐熱性
部材で治具を形成することにより加工が簡単である上に
、所望の形状を容易に得ることができる。(3) By forming the jig with a heat-resistant member such as a high melting point metal or a ceramic sintered body, processing is simple and a desired shape can be easily obtained.
(41,SiO□の被着により、エツチング液等の不純
物の浸透やガスの吸着等を防止することができる。(41, Adhesion of SiO□ can prevent impurities such as etching solution from penetrating and gas adsorption.
以上本発明者によってなされた発明を実施例にに限定さ
れるものではなく、その要旨を逸脱しない範囲で種々変
更可能であることはいうまでもない。It goes without saying that the invention made by the present inventors is not limited to the embodiments described above, and can be modified in various ways without departing from the gist thereof.
たとえば、高融点金属の材質は他のものを用いることも
できる。For example, other high melting point metal materials may be used.
以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野であるフォークおよびマガ
ジンに適用した場合について説明したが、それに限定さ
れるものではな(、たとえば、CVD工程等の各種半導
体製造過程に用いられる治具に広く適用できる。In the above explanation, the invention made by the present inventor was mainly applied to forks and magazines, which are the field of application that formed the background of the invention, but the invention is not limited thereto (for example, various applications such as CVD process, etc.). It can be widely applied to jigs used in semiconductor manufacturing processes.
第1図は本発明による一実施例である治具の王国である
。
1・・・ウェハ、2・・・フォーク(治具)、3・・・
本体、4・・・Sin1層、5・・・マガジン(治具)
、6・・・本体、7・・・Sin。
層。FIG. 1 is a diagram of a jig which is an embodiment of the present invention. 1... Wafer, 2... Fork (jig), 3...
Main body, 4...Sin1 layer, 5...Magazine (jig)
, 6...Main body, 7...Sin. layer.
Claims (1)
のSiO_2を被着してなる治具。 2、SiO_2は耐熱性部材に付着させた後に熱処理す
ることにより形成されることを特徴とする特許請求の範
囲第1項記載の治具。 3、耐熱性部材がアルミナよりなるセラミックスである
ことを特徴とする特許請求の範囲第1項記載の治具。 4、耐熱性部材がシリコンカーバイドまたはボロンナイ
トライドよりなることを特徴とする特許請求の範囲第1
項記載の治具。 5、SiO_2は加熱溶融して耐熱性部材に被着される
ことを特徴とする特許請求の範囲第1項記載の治具。[Claims] 1. A jig made of a heat-resistant member and coated with high-purity SiO_2 on the heat-resistant member. 2. The jig according to claim 1, wherein SiO_2 is formed by applying heat treatment after adhering to a heat-resistant member. 3. The jig according to claim 1, wherein the heat-resistant member is a ceramic made of alumina. 4. Claim 1, characterized in that the heat-resistant member is made of silicon carbide or boron nitride.
Jig described in section. 5. The jig according to claim 1, characterized in that SiO_2 is applied to a heat-resistant member by being heated and melted.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5232285A JPS61213374A (en) | 1985-03-18 | 1985-03-18 | Jig |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5232285A JPS61213374A (en) | 1985-03-18 | 1985-03-18 | Jig |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61213374A true JPS61213374A (en) | 1986-09-22 |
Family
ID=12911554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5232285A Pending JPS61213374A (en) | 1985-03-18 | 1985-03-18 | Jig |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61213374A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63140085A (en) * | 1986-11-29 | 1988-06-11 | Kyocera Corp | Film forming device |
JPH0273625A (en) * | 1988-09-08 | 1990-03-13 | Nec Corp | Equipment for manufacture of semiconductor device |
JPH0546040U (en) * | 1991-11-22 | 1993-06-18 | 三菱マテリアル株式会社 | Wafer baking table |
WO2004095545A3 (en) * | 2003-03-28 | 2005-05-12 | Saint Gobain Ceramics | Wafer carrier having improved processing characteristics |
-
1985
- 1985-03-18 JP JP5232285A patent/JPS61213374A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63140085A (en) * | 1986-11-29 | 1988-06-11 | Kyocera Corp | Film forming device |
JPH0273625A (en) * | 1988-09-08 | 1990-03-13 | Nec Corp | Equipment for manufacture of semiconductor device |
JPH0546040U (en) * | 1991-11-22 | 1993-06-18 | 三菱マテリアル株式会社 | Wafer baking table |
WO2004095545A3 (en) * | 2003-03-28 | 2005-05-12 | Saint Gobain Ceramics | Wafer carrier having improved processing characteristics |
KR100755196B1 (en) | 2003-03-28 | 2007-09-05 | 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 | Wafer carrier having improved processing characteristics |
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