JPS6120768Y2 - - Google Patents
Info
- Publication number
- JPS6120768Y2 JPS6120768Y2 JP1981043485U JP4348581U JPS6120768Y2 JP S6120768 Y2 JPS6120768 Y2 JP S6120768Y2 JP 1981043485 U JP1981043485 U JP 1981043485U JP 4348581 U JP4348581 U JP 4348581U JP S6120768 Y2 JPS6120768 Y2 JP S6120768Y2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- ceramic
- insulating substrate
- substrate
- metal base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 239000000919 ceramic Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 41
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims 2
- 229910000679 solder Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 4
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1981043485U JPS6120768Y2 (de) | 1981-03-27 | 1981-03-27 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1981043485U JPS6120768Y2 (de) | 1981-03-27 | 1981-03-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57157146U JPS57157146U (de) | 1982-10-02 |
JPS6120768Y2 true JPS6120768Y2 (de) | 1986-06-21 |
Family
ID=29840460
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1981043485U Expired JPS6120768Y2 (de) | 1981-03-27 | 1981-03-27 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6120768Y2 (de) |
-
1981
- 1981-03-27 JP JP1981043485U patent/JPS6120768Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS57157146U (de) | 1982-10-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5293301A (en) | Semiconductor device and lead frame used therein | |
JP3009788B2 (ja) | 集積回路用パッケージ | |
JPH03225854A (ja) | 半導体デバイス及びその製造方法 | |
JP3336982B2 (ja) | 半導体装置およびその製造方法 | |
JPH1174439A (ja) | 樹脂モールドパッケージ | |
EP0517967B1 (de) | Hermetisches Hochstromgehäuse | |
JPS6120768Y2 (de) | ||
JP3878897B2 (ja) | 半導体素子収納用パッケージおよび半導体装置 | |
JP2001217333A (ja) | 気密封止型半導体パッケージ | |
JP2536218B2 (ja) | ヒ―トシンク搭載型半導体装置 | |
JPH0382060A (ja) | 半導体装置 | |
JPS639664B2 (de) | ||
JPS6130742B2 (de) | ||
JPH05315467A (ja) | 混成集積回路装置 | |
JP2870501B2 (ja) | 半導体装置 | |
JPH08148647A (ja) | 半導体装置 | |
JPS6242387B2 (de) | ||
JPS64812B2 (de) | ||
JP3894749B2 (ja) | 半導体装置 | |
JP2690248B2 (ja) | 表面実装型半導体装置 | |
JP2669310B2 (ja) | 半導体集積回路装置およびその実装方法 | |
JP2868868B2 (ja) | 半導体装置 | |
JP3011502B2 (ja) | 混成集積回路 | |
JPS6336688Y2 (de) | ||
JPH11233697A (ja) | 半導体装置および製造方法 |