JPS61194829A - Painting apparatus - Google Patents
Painting apparatusInfo
- Publication number
- JPS61194829A JPS61194829A JP3439385A JP3439385A JPS61194829A JP S61194829 A JPS61194829 A JP S61194829A JP 3439385 A JP3439385 A JP 3439385A JP 3439385 A JP3439385 A JP 3439385A JP S61194829 A JPS61194829 A JP S61194829A
- Authority
- JP
- Japan
- Prior art keywords
- solvent
- wafer
- evaporation
- coating
- processing container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010422 painting Methods 0.000 title abstract 4
- 239000002904 solvent Substances 0.000 claims abstract description 42
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000000576 coating method Methods 0.000 claims description 32
- 239000011248 coating agent Substances 0.000 claims description 24
- 230000008020 evaporation Effects 0.000 abstract description 13
- 238000001704 evaporation Methods 0.000 abstract description 13
- 235000012431 wafers Nutrition 0.000 description 14
- 239000007788 liquid Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Coating Apparatus (AREA)
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は、塗布技術、特に、被塗布物を処理容器内に収
容した状態で塗布材を塗布する技術に関し、例えば、半
導体装置の製造において、ウェハ上にレジストを塗布す
るのに利用して有効な技術に関する。[Detailed Description of the Invention] [Technical Field] The present invention relates to a coating technique, and in particular to a technique of coating a coating material while the object to be coated is housed in a processing container. This article relates to techniques that are effective for applying resists.
半導体装置の製造において、ウェハ上にレジストを塗布
する場合、処理８′器の内部に設けた回転可能なスピン
へ７ド上にウェハを載せて保持せしめ、ウェハを回転さ
せながらレジスト液をウェハの表面上に供給してレジス
ト塗布処理を行っている（特公昭５３−３７１８９号公
報）。In the manufacture of semiconductor devices, when applying resist onto a wafer, the wafer is placed on a rotatable spin board installed inside a processing unit and held there, and the resist solution is applied onto the wafer while rotating the wafer. A resist coating process is performed by supplying it onto the surface (Japanese Patent Publication No. 53-37189).
しかし、かかる塗布装置においては、容器内における雰
囲気如何によって塗布されたレジスト膜の塗布品質が不
安定になるという問題点があることが本発明者によって
明らかにされた。However, the inventors have found that such a coating apparatus has a problem in that the coating quality of the coated resist film becomes unstable depending on the atmosphere inside the container.
なお、スピンナ塗布技術を述べである例としては、株式
会社工業調査会発行［電子材料１９８３年１１月号別＋
ｆｆｆ Ｊ昭和５８年１１月１５日発行Ｐ９２〜Ｐ９６
、がある。An example of the spinner coating technology is published by Industrial Research Association Co., Ltd. [electronic material November 1983 issue +
fff J Published November 15, 1980 P92-P96
There is.
本発明の目的は、塗布膜の品質を安定化することができ
る塗布技術を提供することにある。An object of the present invention is to provide a coating technique that can stabilize the quality of a coating film.
本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.
本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、次の通りである。A brief overview of typical inventions disclosed in this application is as follows.
すなわち、処理容器の内部に溶剤の蒸気流を強制的に導
入することにより、塗布処理を溶剤蒸気雰囲気下におい
て行うようにして塗布材中の溶剤の蒸発量を抑制し、蒸
発量の差に起因する塗布品質の変動を防止するようにし
たものである。That is, by forcibly introducing a solvent vapor flow into the processing container, the coating process is performed in a solvent vapor atmosphere, suppressing the amount of evaporation of the solvent in the coating material, and reducing the amount of evaporation caused by the difference in evaporation amount. This prevents fluctuations in coating quality.
第１図は本発明の一実施例であるレジスト塗布装置を示
す縦断面図、第２図はその作用を説明するための拡大断
面図である。FIG. 1 is a longitudinal cross-sectional view showing a resist coating apparatus according to an embodiment of the present invention, and FIG. 2 is an enlarged cross-sectional view for explaining its operation.
本実施例において、このレジスト塗布装置は処理容器１
を備えており、この容器１の内部にはスピンヘッド２が
適当な駆動手段（図示せず）により回転されるように設
けられている。処理容器１の上面における略中央部には
給気口３が開設されており、処理容器１の下面における
スピンヘッド２の外方位置には排気口４が開設されてい
る。In this embodiment, this resist coating apparatus includes a processing container 1
A spin head 2 is provided inside the container 1 so as to be rotated by a suitable drive means (not shown). An air supply port 3 is provided at approximately the center of the upper surface of the processing container 1, and an exhaust port 4 is provided at a position outward of the spin head 2 on the lower surface of the processing container 1.
処理容器ｌ内におけるスピンヘッド２の中心の真上には
、塗布材としてのレジスト液５を滴下するための滴下管
６が挿入されており、滴下管６と処理容器Ｉとは適当な
手段（図示せず）によって相対的に昇降されるようにな
っている。A dripping tube 6 for dropping resist liquid 5 as a coating material is inserted directly above the center of the spin head 2 in the processing container I, and the dripping tube 6 and the processing container I are connected by appropriate means ( (not shown) so that they can be relatively raised and lowered.
処理容器１上には溶剤槽７が容器１の外部において給気
口３を取り囲むように略二重円筒槽形状に形成されてお
り、溶剤槽７にはレジスト液５に使用されたものと同質
の溶剤８が貯留されている。A solvent tank 7 is formed on the processing container 1 in a substantially double cylindrical tank shape so as to surround the air supply port 3 on the outside of the container 1, and the solvent tank 7 contains the same material as that used for the resist solution 5. of solvent 8 is stored.
溶剤槽７の上方には気流強制板９が溶剤槽７および給気
口３の上方空間を覆うように配設されており、前記滴下
管６はこの強制扱９を挿通するようになっている。An air flow forcing plate 9 is disposed above the solvent tank 7 so as to cover the space above the solvent tank 7 and the air supply port 3, and the dripping pipe 6 is inserted through this forced plate 9. .
次に作用を説明する。Next, the action will be explained.
被塗布物としてのウェハ１０をスピンヘット２上に載せ
て真空吸着等の手段により保持せしめ、ウェハ１０を回
転させる。この回転が安定したところで、滴下管６から
レジスト液５をウェハｌＯの中心上に滴下すると、レジ
スト液５は遠心力によって放射方向に拡散し、ウェハｌ
Ｏの表面に塗布されることになる。A wafer 10 as an object to be coated is placed on the spin head 2 and held by means such as vacuum suction, and the wafer 10 is rotated. When this rotation is stabilized, when the resist liquid 5 is dropped from the dropping tube 6 onto the center of the wafer lO, the resist liquid 5 is diffused in the radial direction by centrifugal force, and the wafer lO is
It will be applied to the surface of O.
このとき、第１図に実線矢印で示されているように、給
気口３から排気口４の方向に気流が形成されることによ
り、レジスト液５の飛沫がウェハｌＯの表面に付着する
ことを防止される。At this time, as shown by the solid line arrow in FIG. 1, an air current is formed in the direction from the air supply port 3 to the exhaust port 4, causing droplets of the resist liquid 5 to adhere to the surface of the wafer IO. will be prevented.
ところで、塗布処理が実施される処理容器ｌの内部雰囲
気についての蒸気圧ないしは乾燥度が変動すると、ウェ
ハｌｏ、ｈに塗布されるレジスト膜の品質が不安定にな
ることが、本発明者によって明らかにされた。By the way, the inventor has revealed that if the vapor pressure or dryness of the internal atmosphere of the processing container l in which the coating process is performed changes, the quality of the resist film applied to the wafers lo and h becomes unstable. was made into
すなわち、処理容器ｌの内部雰囲気が乾燥していると、
第２図に示されているように、塗布されたレジスト膜１
１には凹凸１２が発生する傾向があり、例えば、後述す
る溶剤雰囲気が全く形成されない場合、平均膜厚８６９
５人のとき、凹凸の高（氏差σは７０人にもなることが
ある。That is, if the internal atmosphere of the processing container l is dry,
As shown in FIG. 2, the applied resist film 1
There is a tendency for unevenness 12 to occur in 1, and for example, if a solvent atmosphere described later is not formed at all, the average film thickness is 869.
When there are 5 people, the height of the unevenness (height difference σ) can be as high as 70 people.
これは、次のような理由によると、考えられる。This is thought to be due to the following reasons.
すなわち、ウェハ１０上に滴下されたレジスト液が遠心
力により拡散されて塗布膜を形成して行くとき、レジス
ト液は波紋のようになって拡散して行く。この拡散時、
処理容器の雰囲気が乾燥していると、レジスト液中の溶
剤は急速に蒸発することになるが、この溶剤の蒸発度は
個々の波紋の山と谷とにおいて相違するため、当該蒸発
度の差による収縮度の差に起因する凹凸１２が発生する
ことになると思われる。That is, when the resist solution dropped onto the wafer 10 is spread by centrifugal force to form a coating film, the resist solution spreads like ripples. During this diffusion,
When the atmosphere in the processing container is dry, the solvent in the resist solution evaporates rapidly, but since the degree of evaporation of this solvent differs between the peaks and valleys of individual ripples, the difference in the degree of evaporation is It is thought that the unevenness 12 occurs due to the difference in the degree of shrinkage.
そして、各塗布処理時における処理容器ｌの内部雰囲気
についての蒸気圧ないしは乾燥度の相違ないしは変化に
追従して前記溶剤の蒸発度が変動するため、レジス）Ｆ
ＪＩＩに発生する凹凸１２の程度は変動することになり
、その結果、処理容器ｌの内部雰囲気如何により、レジ
スト膜１１の塗布品質が左右されることになる。The degree of evaporation of the solvent fluctuates in accordance with the difference or change in the vapor pressure or degree of dryness of the internal atmosphere of the processing container l during each coating process.
The degree of the unevenness 12 generated on the JII will vary, and as a result, the quality of coating the resist film 11 will be influenced by the internal atmosphere of the processing container l.
このような究明に基づき、本実施例においては、処理容
器１の内部に溶剤の蒸気流を強制的に導入することによ
り、溶剤雰囲気下において塗布処理が行われるようにし
、もって、前記溶剤の蒸発を抑制し、それに起因するレ
ジスト膜における凹凸の発生を抑止するようにしている
。Based on these findings, in this example, the coating process is performed in a solvent atmosphere by forcibly introducing a solvent vapor flow into the processing container 1, thereby preventing the evaporation of the solvent. This is to suppress the occurrence of unevenness in the resist film caused by the unevenness.
ずなわち、給気口３の給気に伴って溶剤槽７の上を空気
が流れると、溶剤槽７の溶剤８は蒸発を助長されつつ空
気流に取り込まれて蒸気流を形成することになる。この
蒸気流が給気口３から処理容器１の内部に導入されるた
め、処理容器１の内部には溶剤の蒸気雰囲気が形成され
、かつ、これが維持され続けることになる。That is, when air flows over the solvent tank 7 along with the air supply from the air supply port 3, the solvent 8 in the solvent tank 7 is evaporated and taken into the air flow to form a vapor flow. Become. Since this vapor flow is introduced into the processing container 1 through the air supply port 3, a solvent vapor atmosphere is formed inside the processing container 1, and this continues to be maintained.
処理容器ｌの内部が溶剤蒸気の雰囲気になると、ウェハ
ｌＯ上に塗布される時のレジスト液中の溶剤の革発は殆
ど抑止されるため、拡散時の波紋の山と谷とにおける蒸
発度の相違に伴う凹凸の発生は防止ないしは抑制される
ことになる。When the inside of the processing container 1 becomes an atmosphere of solvent vapor, the evolution of the solvent in the resist solution when it is applied onto the wafer 10 is almost suppressed, so the degree of evaporation at the peaks and troughs of the ripples during diffusion is reduced. The occurrence of unevenness due to the difference is prevented or suppressed.
なお、塗布処理中、処理容器ｌの溶剤蒸気がレジスト膜
に接触することになるが、レジスト液中の溶剤と同質で
あるため、レジスト液および塗布されたレジスト膜を変
質させることはない。Note that during the coating process, the solvent vapor in the processing container 1 comes into contact with the resist film, but since it is the same as the solvent in the resist solution, it does not alter the quality of the resist solution or the applied resist film.
（１）塗布処理が行われる処理容器の内部に溶剤の蒸気
を強制的に導入することにより、溶剤蒸気の雰囲気下に
おいて塗布処理を行わせることができるため、塗布材の
蒸発を抑制することができ、蒸発度の差に起因する凹凸
の発生を抑制することにより、塗布品質を安定化するこ
とができる。(1) By forcibly introducing solvent vapor into the processing container where the coating process is performed, the coating process can be performed in an atmosphere of solvent vapor, so evaporation of the coating material can be suppressed. By suppressing the occurrence of unevenness caused by the difference in evaporation degree, the coating quality can be stabilized.
（２） 溶剤槽の上に空気が流れるように構成するこ
とにより、溶剤の蒸気流を簡単な構造および作用にて得
ることができるとともに、溶剤蒸気雰囲気を簡単に持続
することができる。(2) By configuring the system so that air flows above the solvent tank, a solvent vapor flow can be obtained with a simple structure and operation, and a solvent vapor atmosphere can be easily maintained.
以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.
例えば、給気口の周囲に配設した溶剤槽に空気を流して
得た溶剤の蒸気流を処理容器の内部に導入するように構
成するに限らず、他の場所で作り出した溶剤蒸気を処理
容器の内部に強制的に吹き込むように構成してもよい。For example, the structure is not limited to introducing a solvent vapor flow obtained by flowing air into a solvent tank disposed around an air supply port into the processing container, but also a structure in which solvent vapor generated elsewhere is processed. The liquid may be configured to be forcibly blown into the container.
（利用分野〕
以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野であるウェハ上にレジスト
を塗布する装置に通用した場合について説明したが、そ
れに限定されるものではなく、マスクにレジストを塗布
する場合等にも通用することができる。(Field of Application) In the above explanation, the invention made by the present inventor was mainly explained in the case where it was applied to the field of application which is the background of the invention, which is an apparatus for coating resist on a wafer, but the invention is not limited to this. It can also be used when applying resist to a mask.
第１図は本発明の一実施例であるレジスト塗布装置を示
す縦断面図、
第２図はその作用を説明するための拡大断面図である。
１・・・処理容器、２・・・スピンヘッド、３・・・給
気口、４・・・排気口、５・・・レジスト液（塗布材）
、６・・・滴下管、７・・・溶剤槽、８・・・溶剤、９
・・・気流強制板、１０・・・ウェハ（被塗布物）、１
１・・・レジスト膜（塗布膜）、１２・・・凹凸。
第 １ 図FIG. 1 is a longitudinal cross-sectional view showing a resist coating apparatus according to an embodiment of the present invention, and FIG. 2 is an enlarged cross-sectional view for explaining its operation. 1... Processing container, 2... Spin head, 3... Air supply port, 4... Exhaust port, 5... Resist liquid (coating material)
, 6...Dripping pipe, 7...Solvent tank, 8...Solvent, 9
...Airflow forcing plate, 10...Wafer (object to be coated), 1
1... Resist film (coating film), 12... Irregularities. Figure 1
Claims (1)
部に溶剤の蒸気流を強制的に導入するように構成されて
いる塗布装置。 ２、溶剤の蒸気流が、溶剤を貯留している溶剤槽の上に
空気流を流すことによって得られるように構成されてい
ることを特徴とする特許請求の範囲第１項記載の塗布装
置。[Scope of Claims] 1. A coating device configured to forcibly introduce a vapor flow of a solvent into a processing container that houses an object to be coated and coats a coating material. 2. The coating device according to claim 1, wherein the vapor flow of the solvent is obtained by flowing an air flow over a solvent tank storing the solvent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3439385A JPS61194829A (en) | 1985-02-25 | 1985-02-25 | Painting apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3439385A JPS61194829A (en) | 1985-02-25 | 1985-02-25 | Painting apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61194829A true JPS61194829A (en) | 1986-08-29 |
Family
ID=12412929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3439385A Pending JPS61194829A (en) | 1985-02-25 | 1985-02-25 | Painting apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61194829A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63133526A (en) * | 1986-11-25 | 1988-06-06 | Tokyo Electron Ltd | Application of resist |
| US5264040A (en) * | 1991-07-11 | 1993-11-23 | Sematech, Inc. | Rapid-switching rotating disk reactor |
-
1985
- 1985-02-25 JP JP3439385A patent/JPS61194829A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63133526A (en) * | 1986-11-25 | 1988-06-06 | Tokyo Electron Ltd | Application of resist |
| US5264040A (en) * | 1991-07-11 | 1993-11-23 | Sematech, Inc. | Rapid-switching rotating disk reactor |
| US5284805A (en) * | 1991-07-11 | 1994-02-08 | Sematech, Inc. | Rapid-switching rotating disk reactor |
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