KR0129664B1 - Coating apparatus - Google Patents

Abstract

A coating equipment is disclosed. The coating equipment comprises: a plurality of coater(30,100) for coating coat materials by supplying a vertical down laminar flow(15); and a control means for controlling a temperature and a humidity of the vertical down laminar flow(15). The coater(30) includes a supporter for supporting a substrate, a driving means for rotating the substrate, and a surrounding member having an aperture(53) for receiving the vertical down laminar flow(15) and surrounding the substrate. The control means includes a housing(51) and a controller for controlling a temperature and a humidity of the laminar flow(15).

Description

Coating equipment

1 is a cross-sectional view showing a schematic configuration of a conventional coating device.

2 is a schematic diagram showing the installation state of the coating equipment according to an embodiment of the present invention.

3 is a schematic block diagram showing a coating equipment according to an embodiment of the present invention.

4 is a cross-sectional view showing a temperature and humidity control device in the coating equipment shown in FIG.

5 is a schematic diagram showing a coating apparatus applied to an embodiment of the present invention.

＊ Explanation of symbols on main parts of drawing

1 semiconductor wafer 2 upper cup

3: lower cup 4: cover

5: spin chuck 6: nozzle

7: moter 10: clean room

11: body 12: passage

13: filter 15: down stream of clean air

20: coating device 30: spin chuck

32: motor 33: output shaft

34: Cup 35: Inlet

36: exhaust pipe (exhaust pipe) 27: drain pipe

38: rain box 39: resist nozzle

40: wafer 50: temperature / humidity control device

51 housing 52 opening

53: opening 54: fan

55: damper 56: ionizer

57: heat exchanger 58: pipe

59: fan 60: the first storage tank

61 pump 62 first temperature controller

63: humidification tube 64: hole

65: humidifier 66: controller

67: temperature sensor 68: cable

69: heat exchanger 70: pipe

71: fan 72: second storage tank

73 pump 74 second temperature controller

75: controller 76: temperature sensor

77 cable 78 filter

100: coating device 101: basic base

102 passage 103 treatment mechanism

104: processing mechanism 105: processing mechanism

106: processing mechanism 107: processing mechanism

108: processing mechanism 110: conveying apparatus (conveying mechanism)

111: main body 112: tweezers

113: tweezers 120: wafer carrying in / out mechanism

121: tweezers 122: wafer cassette

123: wafer cassette W: wafer

W _B : Wafer W _F : Wafer

The present invention relates to a coating apparatus provided with a coating apparatus for applying a resist or a developing solution to a coated object.

Background Art Conventionally, for example, a method disclosed in Japanese Patent Laid-Open No. 52-144971 is known as a method for applying a resist to a semiconductor wafer as a coated object.

In this method, a resist is applied to a semiconductor by a spin coder provided in a clean room, and the semiconductor wafer is coated on a spin chuck formed inside the cup having an upper inlet for entering a downward flow of clean air in the clean room. In a state in which vacuum is adsorbed upward, the wafer is rotated at a high speed by a motor connected to a spin chuck, and the resist is dropped on the center of the surface to be coated of the wafer, and the resist is removed from the entire surface of the surface to be coated by the centrifugal force at that time. Apply to

However, in the case of applying the resist by the apparatus as described above, there is a drawback that the film thickness of the resist applied to the wafer becomes uneven due to the temperature change of the resist.

In order to solve such a drawback, the technique of adjusting the resist temperature at the time of application | coating and suppressing the temperature change of a resist, and apply | coating the resist to the surface of a semiconductor wafer by dropping it apply | coats, for example, Unexamined-Japanese-Patent No. 61-125017. It is disclosed in the call publication.

In addition, when developing a resist film exposed to the surface pattern using, for example, a semiconductor wafer as a target object, a spin chuck formed inside a cup having an upper inlet for entering a downward flow of clean air in a clean room is provided. The semiconductor wafer is vacuum-adsorbed with the surface to be coated upward, and the developer is supplied to the developing surface of the wafer by a spray nozzle or the like while the wafer is rotated at a low speed or stopped by a motor connected to the spin chuck. The method of apply | coating and then rotating a wafer at high speed by a motor and removing a developer remaining after a process by centrifugal force is employ | adopted.

Also in this case, there is a problem that the development pattern on the wafer becomes uneven due to the temperature change of the developer, as in the case of applying the resist described above, and the temperature change of the resist is adjusted by adjusting the temperature change of the resist by adjusting the temperature of the developer. The method of apply | coating a developing solution is employ | adopted while suppressing.

However, as described above, in the case of performing resist coating or developer coating while entering the down stream of clean air in a clean room, even after adjusting the temperature of the resist or developer, for example, after being supplied to the wafer, The resist and the developer may not be able to obtain the desired film thickness or development pattern of the resist due to the ambient temperature and fluctuations in the cup, or the film thickness of the resist or the desired uniformity of development may not be obtained. Productivity will fall. As a technique of stabilizing the atmosphere around a wafer, there exist some which were disclosed by Unexamined-Japanese-Patent No. 60-152029.

This technique will be described with reference to FIG.

In FIG. 1, the semiconductor wafer 1 adsorbed by the spin chuck 5 is enclosed by the cover 4 which consists of the lower cup 3 and the upper cup 2, and is sealed. In this state, the resist is dropped from the nozzle 6 falling down to the center of the wafer 1.

As a result, the solvent contained in the resist volatilizes, and the inside of the cover 4 is in a saturated state of the solvent, so that the temperature and humidity around the semiconductor wafer 1 are constant.

Therefore, in this state, by rotating the wafer 1 by the motor 7, formation of a uniform resist film on the surface of the wafer 1 can be expected.

However, in such a technique, a resist sheet or a developer that has been blown off by the rotation of the wafer 1 is fixedly attached to the inner wall of the cover 4, and when the fixed deposit is accumulated high, it is peeled off with a slight force and the inside of the cup is removed. Atmosphere may be contaminated and dust may adhere to the semiconductor wafer 1.

As the wafer 1 is highly integrated with 4M bits, which are highly integrated from 256K bits to 1M bits and 4M bits, it is necessary to increase the cleanliness of the atmosphere, but in the above-described technique, it is not possible to maintain the necessary cleanliness due to dust adhesion to the wafer. Therefore, there was a problem that the product consumption rate and productivity are lowered.

SUMMARY OF THE INVENTION The present invention has been made to solve such a conventional problem, and its object is to apply a resist or a developer to an object to be coated without being influenced by the temperature and humidity of the atmosphere while maintaining a desired cleanliness. To provide an application facility.

The coating equipment according to the present invention is a coating apparatus for applying a resist or a developing solution to a coated object while supplying a downstream of clean air to the coated object, a temperature of the downstream of the clean air supplied to the coated device, and A control means for controlling humidity is provided.

Next, an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

In the present embodiment, the present invention is applied to resist guiding of a semiconductor wafer in a semiconductor manufacturing process.

2 is a view for explaining the installation state of the coating equipment according to the present embodiment.

In FIG. 2, the reference numeral 10 is a clean room, and the coating equipment 20 is provided in the clean room 10. As shown in FIG. The clean room 10 has an air passage 12 formed along its ceiling and is adapted to supply air from a blower (not shown) to the passage 12.

A filter 13 is provided just below the passage 12, and air supplied to the passage 12 passes through the filter 13 and is introduced over the entire surface of the main body 11 of the clean room 10. It becomes the downward flow 15 of clean air.

As shown in FIG. 3, the coating equipment 20 is provided with a coating apparatus 30 for applying a resist of a semiconductor wafer as a coated object, and a temperature of the downstream 15 of clean air supplied perpendicularly to the wafer. A temperature / humidity control device 50 for controlling humidity is provided.

The coating device 30 includes a spin chuck 31 for supporting the wafer 40 in a horizontal or rotatable manner by vacuum suction.

The spin chuck 31 is connected to the output shaft 33 of the spin motor 32, and is rotated by the motor 32 at a predetermined rotational speed in the range of, for example, 8000 rpm. As the motor 32, for example, an AC servo motor can be used.

Around the wafer 4 on the spin chuck 31, a substantially cylindrical cup 34 made of resin, stainless steel, or the like is formed to surround the wafer 40. An inlet 35 is formed in the upper portion of the cup 34 to allow the downstream 15 of the clean air of the clean room 10 to be introduced.

In addition, the upper part of the circumferential wall of the cup 34 is formed inclined so that the angle formed with the bottom wall thereof may be acute. At the bottom of the cup 34, an exhaust pipe 36 and a used resist are connected to an exhaust device (not shown) for exhausting the air in the cup 34 so as to form a downflow 15 of clean air. A drain pipe 37 for discharging from the cup 34 is formed.

The drain pipe 37 is connected to the drain box 38 which forms the cubic shape of vinyl chloride, for example, and the resist waste liquid after use which flowed through the drain pipe 37 in this drain box 38 is accommodated. do.

The upper part of the wafer 40 supported by the spin chuck 31 is formed in the nozzle 39 for dropping the resist liquid in the substantially center of the wafer 1. This nozzle 39 is connected to a pipe (not shown) which is connected to a resist container (not shown) containing a resist liquid, and by operating a bellows pump (not shown) formed in the middle of the pipe, a nozzle ( 39) is supplied with a resist. The nozzle 39 is made of, for example, tetrafluoroethylene resin or stainless steel.

In the nozzle 39 dropping the resist, a thermostat 41 having a double tube structure is formed so as to surround a part of the nozzle 39. In the temperature controller 41, the constant temperature water set to a predetermined temperature in a constant temperature tank (not shown) flows through the pipes 42 and 43, and circulates through it, whereby the droplets of the resist drop through the nozzle 39. The resist liquid that flows is maintained at a constant temperature.

The temperature / humidity control device 50 is formed just above the inlet 35 of the cup 34. The temperature / humidity control device 50 is provided with housings 51 of each shape having openings 52 and 53, respectively, up and down, and the downward flow 15 of clean air is drawn from the openings 52. The temperature and humidity of the downstream 15 of the clean air which have been collected and collected are controlled so as to be discharged from the opening 53.

Two fans 54 are formed in the vicinity of the opening 52 in the housing 51, whereby the downward flow 15 of clean air can be forcibly introduced into the housing 51. A damper 55 is formed at the bottom of the fan 54 for adjusting the air volume, and at the bottom thereof, the static electricity of the wall in the down stream 15 of the clean air is released to cool down the down stream 15 of the clean air. Condensation of moisture reduces its humidity.

The pipe 58 of the first heat exchanger 57 is connected to a first storage tank 60 that stores water for cooling, and a pump 61 is connected to the pipe 58. By operating the pump 61, the water in the storage tank 60 circulates in the pipe 58. The first storage tank 60 is connected to a first temperature control device 62 capable of heating and cooling the cooling water, and the cooling water circulated through the pipe 58 by the first temperature control device 62. The temperature of is set to a predetermined value.

Under the first heat exchanger 58, a humidifying tube 63 in which a plurality of holes 6 are formed is formed. The humidifier tube 63 is connected to a humidifier 65 formed outside the housing 51. The humidifier 65 generates steam such as a solvent of a photoresist, for example, by ultrasonic waves, and the steam is supplied from the hole 64 into the housing 51 through the humidifying tube 63.

A condenser 66 is connected to the humidifier 65, and the humidity sensor 67 formed below the second heat exchanger 69, which will be described below, via the cable 68, is connected to the condenser 66. Connected.

Therefore, a signal is output to the controller 66 according to the humidity detected by the humidity sensor 67, and the controller 66 outputs a control signal to the humidifier 65 according to the signal, and then from the housing 51. The feedback control is performed so that the humidity of the down stream 15 of the clean air supplied to the coating device 30 becomes a desired value. A second heat exchanger 69 having a pipe 70 and a fan 71 through which the temperature control water flows is formed below the humidifying tube 63, whereby the applicator 3 is removed from the housing 51. The temperature of the downstream 15 of the clean air supplied to the air is set to a predetermined temperature.

The pipe 70 of the second heat exchanger 69 is connected to a second storage tank 72 for storing water for temperature control, and a pump 73 is connected to the pipe 70. By operating the pump 73, the water in the storage tank 72 circulates in the pipe 70.

A second temperature control device 74 capable of heating and cooling the temperature regulating water is connected to the second storage tank 72, and a controller 75 is connected to the temperature control device 74. The temperature sensor 76 formed below the second heat exchanger 69 is connected to the controller 75 via the cable 77.

Accordingly, the temperature sensor 76 is output to the controller 75 according to the detected temperature, and the controller 75 outputs a control signal to the second temperature controller 74 in response to the signal to the pipe 70. ), The temperature of the water circulating is controlled, and the feedback control is performed so that the temperature of the downstream 15 of the clean air supplied from the housing 51 to the coating device 30 becomes a desired value.

The filter 78 is formed in the vicinity of the outlet 53 of the housing 51 below the temperature sensor 67 and the temperature sensor 76, and the downflow 15 of clean air passes through the filter 78. By doing so, the cleanliness of the downstream 15 is further improved.

As the filter 78, for example, a HEPA filter can be used. In addition, the application | coating apparatus 20 is operation setting and control by the control part which is not shown in figure.

Next, the resist coating operation | movement in the coating installation 20 comprised as mentioned above is demonstrated.

The semiconductor wafer 40 as the object to be processed is conveyed upward of the spin chuck 34 by, for example, a conveying mechanism (not shown) that performs belt conveyance, and the center of the wafer 40 and the center of the spin chuck 31 are transferred. In accordance with this, the wafer 40 is placed on the spin chuck 31.

In this case, the wafer 40 placed on the spin chuck 31 by sandwiching the wafer with two holding members (not shown) having an outer shape that fits the outer circumference of the wafer 40 is a vacuum mechanism (not shown). Is sucked in the vacuum by the chuck 31.

In addition, when the wafer 40 is conveyed onto the chuck 31 in this manner, the cup 34 is retracted downward by an elevating device (not shown) so as not to interfere with the conveyance of the wafer 40. ) Rises to the position of FIG. 2 after it is held above the chuck 31.

Next, the resist is dripping off the nozzle 39 dripping from the resist in the center of the wafer 40 held on the chuck 31.

This resist is first supplied to the temperature controller 41 through a pipe from a resist container (not shown) as described above. The constant temperature water set at a predetermined temperature from the constant temperature tank is circulated through the pipes 42 and 43 by the temperature controller 41 so that the temperature controller 41 flows through the nozzle 39 falling down of the resist and drops onto the wafer 40. The resist falling off is controlled to a constant temperature of, for example, 24 ° C.

In this case, the amount of resist which can be temperature-controlled once is 10 cc which is about 3 times that, for example, when the resist amount of one wafer is 3 cc, for example.

In addition, by making the passage of the resist in the temperature controller 41 into a coil shape or a spiral shape, the temperature control can be performed with high efficiency by increasing the amount of resist that can control the temperature at one time.

Thus, the temperature-regulated resist is dropped from the nozzle 39 to the surface of the wafer 40, for example, by 3 cc, and the wafer 32 is held at, for example, 5000 rpm / second by the motor 32. It accelerates and rotates at high speed, for example at 4000 rpm, and diffuses the resist which fell.

Thereafter, the wafer 40 is further rotated to dry the diffused resist.

In this way, during the coating process, the interior of the cup 34 is exhausted through the exhaust pipe 36 by an exhaust device (not shown) according to a predetermined program. The resist blown and scattered by the rotation of the wafer 40 adheres to the inner portion, which is the inclined portion of the upper portion of the circumferential wall of the cup 34, and falls to the outside of the wafer 40.

That is, by the circumferential wall inclined portion of the cup 34, the scattered resist is prevented from being returned to the wafer 40 and splashed. The scattered resist is received in the drain box 38 through the drain pipe 37.

During the resist coating process, the cup 34 is evacuated by the exhaust device as described above, so that the down stream 15 of the clean air controlled by the temperature / humidity control device 50 is controlled at all times. It is fed into the cup 34.

That is, the downward flow 15 of the clean air of the clean room 10 is forcibly collected in the housing 51 by the fan 54 from the upper opening 52 of the housing 51, and this is damped by the damper 55 and Moisture is removed by supplying the first heat exchanger (57) through the ionizer (56).

Thereafter, as described above, the increase amount from the humidifier 65 and the second heat exchanger are operated by operating the controllers 66 and 75 according to the values detected by the humidity sensor 67 and the temperature sensor 76. The temperature regulating water flowing through 69 is controlled, as a result of which the temperature and humidity of the downstream 15 of the clean air are controlled.

Thus, the down stream 15 of clean air whose temperature and humidity are controlled to a desired value is supplied into the cup 34 through the filter 78. Therefore, the inside of the cup 34 always maintains a desired atmosphere, and the problem caused by the change in temperature and humidity around the wafer 40 at the time of applying the resist is eliminated.

That is, the thickness of the resist film applied to the wafer 40 can be made into a desired value, and the thickness of a resist film improves uniformity. This can significantly improve product consumption and productivity. Moreover, even when the temperature or humidity in a clean room fluctuate | varied, the influence can be avoided by controlling temperature and humidity as mentioned above. In addition, since the downflow 15 of the clean air cleaned by the ionizer 56 and the filter 78 is supplied into the cup 34, the cup 34 can be kept in an extremely clear and clean state, and the semiconductor wafer Since contamination by the dust of 40 can be prevented, product consumption rate and productivity can be further improved.

In addition, in the above-described embodiment, the downflow 15 of the clean air is forcibly taken out by the fan 54, so that the displacement of the cup 34 and the clean air supplied into the cup 34 are reduced. A balance with the flow rate of the downstream 15 can be maintained.

Therefore, the scattering of the air flow inside the cup 34 can be prevented, so that the scattered resist can be extremely attached to the wafer 40.

A butterfly-shaped damper is provided in the exhaust pipe 36, and the damping volume can be rotated to change the exhaust area of the exhaust pipe 36 to control the displacement. In this case, the scattering of the air flow inside the cup 34 can be further reduced.

The damper can be rotated by a rotary actuator such as a rotary cylinder. As the damper, an auto damper which automatically selects whether to exhaust the air according to the purpose, a linear damper for preventing the influence of the fluctuation of the exhaust, and a sequential damper that can change the exhaust amount in several stages can be used. It can also be used in combination.

After the resist coating operation to the wafer 40 is completed in this manner, the series of processing is completed by transferring the wafer 40 out of the apparatus from the coating apparatus 30 by the transfer mechanism (not shown) described above.

Next, the Example which applied this invention to the coating device 100 shown in FIG. 5 is demonstrated.

The coating device 100 is a device capable of performing all the processing related to a series of coatings from the conveyance of a semiconductor wafer. The preliminary heating mechanism 103 and the cooling mechanism, which are formed on the base 101, respectively, are the base stages 101. (104), the first heating mechanism (105), the second heating mechanism (106), the first coating mechanism (107), and the second coating mechanism (108).

In addition, a passage 102 extending in the direction of the arrow Y (horizontal direction) is formed in the center portion of the base table 101, and the preheating mechanism 103, the cooling mechanism 104, and the first heating are formed on one side thereof. The mechanism 105 and the second heating mechanism 106 are formed, and the first coating mechanism 107 and the second coating mechanism 108 are formed on the other side.

In addition, although the preheating mechanism 103 and the cooling mechanism 104 are described in parallel in FIG. 5, the cooling mechanism 104 is actually formed under the preheating mechanism 103. In FIG. The passage 102 has a main body 111 and two wafer suction holding tweezers 112 and 113. The main body 111 can move the passageway 102 in the Y direction, and the tweezers 112 and 113 are in the Y direction (horizontal direction), X direction (vertical direction), Z direction (vertical direction), and θ. It is possible to move independently in the direction (rotational movement).

Moreover, these tweezers 112 and 113 carry out and carry-out of the wafer W with respect to any mechanism among the processing mechanisms 103 and 108 above, and from the wafer carry-in / out mechanism described below. The wafer W is exchanged.

On the other side of the base table 101, a wafer carrying in / out mechanism 120 is formed. This brought out mechanism 120 is provided with a wafer cassette (123) for receiving a wafer (W _B), the wafer cassette 122 and the processed wafer (W _F) after receiving the previous process is formed.

Moreover, the carry-out / out mechanism 120 is provided with the tweezers 121 which adsorb | suck and hold | maintain the wafer W, and are movable to X and Y directions, and this tweezers 121 draws the wafer before processing into a cassette ( 122, the processed wafer is taken out of the cassette 122, and the processed wafer is received from the tweezers of the transfer apparatus 110. In the interface with the carrying-out mechanism 120 of the passage 102, the wafer W can be exchanged between the tweezers 112, 113 and the tweezers 121 of the conveying apparatus 110. It is supposed to be.

The first and second coating mechanisms 107 and 108 have the same structure as the coating apparatus 30 described above, and actually apply a resist to the wafer W, for example.

In this way, the applicator 100 is installed in the presence of a downflow of clean air, for example, in a clean room having a downflow, and above the apparatus the same as the temperature humidity controller 50 described above. Install the device.

In this case, the temperature and humidity controlled downflow does not necessarily have to be supplied to the entire surface of the applicator 100, but is perpendicular to the wafers installed in at least the first and second applicators 107, 108. It can be supplied. According to the coating device 100 as described above, a series of coating operations called pre-baking, such as preheating, cooling, prebake, and resist, and post bake can be performed. Can be set arbitrarily.

In addition, since the two tweezers 112 and 113 can be operated independently, and two heat treatment mechanisms and two coating mechanisms are formed, a plurality of wafers can be processed at the same time. Processing can be performed.

As described above, according to these embodiments, the downward flow of clean air whose temperature and humidity are controlled by the temperature humidity controller is always supplied to the coated object such as a wafer set in the coating apparatus. It is possible to prevent adverse effects on the coating apparatus due to fluctuations in the temperature and humidity of the foam atmosphere, and to significantly improve the cleanliness of the object to be processed.

In addition, this invention is not limited only to the above-mentioned embodiment, It can change variously. For example, in the temperature / humidity control device, the temperature and humidity are controlled by a heat exchanger and a humidifier using ultrasonic waves, but any one may be used as long as the temperature and humidity can be controlled.

For example, a heat exchange may use a peltier element, etc., and humidification may be performed by bubbling etc.

Incidentally, the coating apparatus in the above-described embodiment can be applied to a resist coating of a semiconductor wafer, but not limited to this, and to a coating treatment in the case of forming a resist film in which a pattern on the wafer surface is exposed.

In other words, the present invention can be applied as long as it is an apparatus for applying a resist sheet or a developer to the object to be coated by the spin method.

In addition, in the coating device 100 described above, the second coating device 108 is basically applied to a developing device having the same structure as the coating device 30, and at the right end of the passage 102, By allowing wafers to be exchanged between them, a coating apparatus capable of performing a series of operations from the resist coating can be obtained, and the present invention can also be applied to such an apparatus.

In addition, although the case where a wafer is used as a to-be-coated object was shown, it is not limited to this, You may apply | coat a resist or a developing solution to other things, such as a mask.

Claims (15)

A number of treatment mechanisms for carrying out a series of processes from the application of a resist or a developer to the surface of the workpiece to form a coating layer on the workpiece, and for conveying the workpiece from one treatment mechanism to another. A coating device including a conveying mechanism and a passage to the conveying mechanism, wherein the coating device maintains the surface of the object to be horizontal during the resist or developer application process, and the entire surface area of the object to be coated during the resist or developer application process. The downflow generation means of the clean air for generating the downflow of the clean air supplied from the upper part of the to-be-applied body, the exhaust means for exhausting the air supplied to the to-be-processed object downward, and the air supplied to the to-be-processed object Coating equipment comprising a control means for controlling the temperature and humidity. In order to apply a resist or a developer to the surface of the object to be coated, support means for supporting the object to be maintained horizontally, and for supplying a resist or developer to the surface of the object to be coated. An applicator comprising a supply means, a downflow generation means for clean air for generating a downflow of clean air supplied from an upper portion of the object to the entire surface region of the object to be coated, and the air supplied to the object to be coated And exhaust means for exhausting the gas downward and control means for controlling the temperature and humidity of the air supplied to the object to be coated. According to claim 2, wherein the control means is a dehumidification device for dehumidifying the airflow, a humidity control device for controlling the airflow dehumidified to the desired humidity by humidifying the airflow and a temperature control for controlling the airflow dehumidified to an arbitrary temperature Coating equipment, characterized in that comprising a device. 3. The coating equipment according to claim 2, wherein the control means is mounted directly on the coating device in order to supply a controlled airflow of temperature and humidity to the coating device. The coating apparatus according to claim 1, further comprising a fan for guiding the air flow strongly into the housing. The coating equipment according to claim 2, further comprising a damper for controlling the flow rate of the clean air stream. The coating equipment according to claim 2, further comprising an ionizer for removing dust from the air stream of clean air. The coating equipment according to claim 2, further comprising a fan for introducing air into the object to be coated through the air inlet. The coating equipment according to claim 2, wherein the control means has a temperature sensor and a humidity sensor provided directly on the object to be coated. The humidity control device according to claim 2, wherein the control means includes first means for dehumidifying by cooling the air supplied to the object to be coated, second means for heating the air to a predetermined temperature in response to a detection signal from the temperature sensor, and a humidity sensor. And third means for dehumidifying the air to a predetermined humidity in response to a detection signal from the same. The coating equipment according to claim 2, further comprising a filter provided directly on the object to be coated to collect dust in the air stream. 3. The coating device according to claim 2, wherein the applicator has rotation means for rotating the support means and an opening positioned on the object to be supported by the support means so that clean air can be supplied downward to the entire surface of the object to be coated. And an enclosure means for enclosing the circumference of the object to be supported by the support means. 13. An applicator as claimed in claim 12, wherein said enclosing means of said applicator has an exhaust pipe at the bottom thereof to exhaust air from the enclosing body. The method of claim 2, wherein the downflow generation means of the clean air is for supplying clean air into the auxiliary chamber from the upper end of the auxiliary chamber and the auxiliary chamber located directly above the object to be longitudinally vertical. And an air supply source, wherein the clean air supplied to the auxiliary chamber forms a downward flow of clean air in the auxiliary chamber. 15. The coating equipment according to claim 14, wherein the downflow generation means of the clean air further comprises a means for diffusing clean air.

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