JPS61193358A - Light source - Google Patents

Light source

Info

Publication number
JPS61193358A
JPS61193358A JP60032845A JP3284585A JPS61193358A JP S61193358 A JPS61193358 A JP S61193358A JP 60032845 A JP60032845 A JP 60032845A JP 3284585 A JP3284585 A JP 3284585A JP S61193358 A JPS61193358 A JP S61193358A
Authority
JP
Japan
Prior art keywords
gas
bulb
light
light source
tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60032845A
Other languages
Japanese (ja)
Inventor
Yasue Sato
安栄 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP60032845A priority Critical patent/JPS61193358A/en
Publication of JPS61193358A publication Critical patent/JPS61193358A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J65/00Lamps without any electrode inside the vessel; Lamps with at least one main electrode outside the vessel
    • H01J65/04Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels
    • H01J65/042Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels by an external electromagnetic field

Abstract

PURPOSE:To obtain a light source of a long service life with little change in the luminous intensity and the spectrum with the passage of time, by plasma- radiating a sealed gas excited by laser beams in a bulb. CONSTITUTION:Laser beams from a laser radiator 1 are formed into an adequate beam form through optical system members 2 and 3, transmitted through the laser passage, and focused by a focusing optical member 4 to a focus point in a bulb 5. At the focus in the bulb, an electromagnetic field is generated which is strong enough to excite the sealed gas discharged, and a high temperature plasma of the sealed gas generated by a discharge radiates spectra including ultraviolet rays and infrared rays. Since this system has no electrode in the bulb, no change of luminous intensity or spectrum from the evaporation or spattering of the electrode is generated, and a long service life can be obtained.

Description

【発明の詳細な説明】 [発明の利用分野] 本発明は光源装置に関し、更に詳しくはレーザ光による
励起で封入ガスをプラズマ発光させる特に紫外・遠紫外
光源として好適な光源装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a light source device, and more particularly to a light source device suitable as an ultraviolet/deep ultraviolet light source that causes a sealed gas to emit plasma light by excitation with a laser beam.

[従来技術] 露光装置などの半導体製造装置における光源装置には、
所望波長域の発光強度が充分であることのほかに、寿命
が長いことおよび発光中心の位置が安定していることな
ど、種々の要求がある。
[Prior art] Light source devices in semiconductor manufacturing equipment such as exposure equipment include
In addition to sufficient emission intensity in a desired wavelength range, there are various requirements such as long life and stable position of the emission center.

従来、フォトリソグラフィ用の紫外ないし遠紫外光源と
して用いられていたのは、水銀蒸気或いは希ガス(Xe
ガス等)を封入したガラス管球内で電極間にアーク放電
を発生させるタイプのものであり、電極がアーク放電に
曝されるため極めて高温となって徐々に蒸発したり、ま
たアークによって生じる高速粒子でスパッタされて電極
が消耗したりするのが避けられず、これら蒸発ないしス
パッタで生じた金属が管球内壁面に付着して紫外域の波
長透過性を変化させるので、時間経過と共に発光強度と
スペクトルとが徐々に変化し、同時に電極形状の変化に
よるアーク形状の変化と発光中心位置の変化も起こり、
従って一般的にその寿命は数百時間が限度であるとされ
、その交換のために半導体製造装置をたびたび停止する
のを余儀なくされていた。またこの交換に際しても、電
極位置が管球ごとに微妙に異なるため、交換の都度、管
球の位置の微調節が必要であった。
Conventionally, mercury vapor or rare gas (Xe) has been used as an ultraviolet or deep ultraviolet light source for photolithography.
This type generates an arc discharge between electrodes in a glass tube filled with gas (gas, etc.), and as the electrodes are exposed to the arc discharge, they become extremely high temperature and gradually evaporate, and the high speed generated by the arc It is unavoidable that the electrodes are worn out due to sputtering by particles, and the metal generated by these evaporation or sputtering adheres to the inner wall surface of the tube and changes the wavelength transmittance in the ultraviolet region, so the emission intensity decreases over time. and the spectrum gradually change, and at the same time, changes in the arc shape and the position of the emission center occur due to changes in the electrode shape.
Therefore, their lifespan is generally said to be limited to several hundred hours, and semiconductor manufacturing equipment has often been forced to stop in order to replace them. Furthermore, when replacing the tubes, the positions of the electrodes were slightly different for each tube, so it was necessary to fine-tune the position of the tubes each time the tubes were replaced.

[発明の目的および概要] 本発明は以上の従来技術の問題点を解決して、発光強度
およびスペクトルの経時変化が少なく、発光中心位置が
外部光学系で安定に定められるような光源装置を提供す
るものであり、管球内に封入されたガスに外部からレー
ザ光を集光して、レーザ光による励起で封入ガスの放電
破壊を起こさせ、集光レーザ光の管内焦点位置にて封入
ガスの高温プラズマを発生させることにより、封入ガス
成分組成に応じたスペクトル分布の安定した発光強度お
よび発光中心位置の光源を得たものである。
[Objective and Summary of the Invention] The present invention solves the problems of the prior art as described above, and provides a light source device in which the emission intensity and spectrum change little over time, and the emission center position can be stably determined by an external optical system. A laser beam is focused from the outside on the gas sealed in a tube, and the excitation caused by the laser beam causes discharge destruction of the filled gas, and the filled gas is released at the focal position of the focused laser beam inside the tube. By generating high-temperature plasma, a light source with a stable emission intensity and emission center position with a spectral distribution according to the composition of the gas enclosed in the gas is obtained.

本発明の光源装置では、管球内に電極が存在しないため
その蒸発やスパッタの影響で発光強度やスペクトルが変
化することがなく、長寿命のものが得られるほか、発光
中心位置は外部からのレーザ光の焦点位置で定まるため
、常に安定に維持でき、管球め交換によっても変化する
ことがない。
In the light source device of the present invention, since there are no electrodes inside the bulb, the emission intensity and spectrum do not change due to the effects of evaporation or sputtering, and a long life can be obtained. Since it is determined by the focal position of the laser beam, it can always be maintained stably and will not change even when the tube is replaced.

本発明において、封入ガスはその成分組成によって発光
スペクトル分布を定めるものであり、例えば紫外ないし
遠紫外域用にはXeなどの希ガス、ハロゲンガス、アル
ゴンガス、水銀蒸気などが特定組成で封入され得る。ま
たこの場合管球自体も目的波長域の透過性によって材料
を選ばれ、例えば紫外ないし遠紫外用としては、フッ化
カルシウム、フッ化リチウム、フッ化マグネシウム、石
英ガラス、サファイアなどが用いられる。
In the present invention, the sealed gas determines the emission spectrum distribution depending on its component composition. For example, for use in the ultraviolet to far ultraviolet region, a rare gas such as Xe, halogen gas, argon gas, mercury vapor, etc. may be sealed with a specific composition. obtain. In this case, the material of the tube itself is selected depending on the transmittance of the target wavelength range. For example, for ultraviolet or far ultraviolet light, calcium fluoride, lithium fluoride, magnesium fluoride, quartz glass, sapphire, etc. are used.

[実施例] 本発明の実施例を示せば以下の通りである。[Example] Examples of the present invention are as follows.

第1図は本発明に係る光源装置の基本構成例を示す構成
図で、レーザ発振器1は前記封入ガスの放電励起に充分
な強度の連続またはパルス状のレーザ光を発振する。2
および3はレーザ光を扱い易い適当な形状にして伝達す
る光学系部材であり、伝達されたレーザ光は集光用光学
系部材4によって管球5内の焦点位置に集光される。管
球5は、内部に発光用ガスとして例えばXeなどの希ガ
ス、アルゴンガス、水銀蒸気などを封入した遠紫外線透
過材料性のものである。6は管球5を透過したレーザ光
をもう一痕管球内へ入射させるための反射光学系部材で
あり、集光用光学系部材4と共役・□である。
FIG. 1 is a configuration diagram showing an example of the basic configuration of a light source device according to the present invention, in which a laser oscillator 1 oscillates continuous or pulsed laser light with sufficient intensity to discharge excite the sealed gas. 2
and 3 are optical system members for transmitting laser light in a suitable shape that is easy to handle, and the transmitted laser light is focused at a focal position within tube 5 by condensing optical system member 4. The tube 5 is made of a material that transmits far ultraviolet rays and has a luminescent gas such as a rare gas such as Xe, argon gas, or mercury vapor sealed therein. Reference numeral 6 denotes a reflective optical system member for causing the laser beam that has passed through the tube 5 to enter the tube one more time, and is conjugate with the condensing optical system member 4.

レーザ発振器1からのレーザ光は、光学系部材2.3に
よって適当なビーム形状にされて所要の光路を伝達され
、集光用光学系部材4によって集光されて管球5内の焦
点位置に集まる。管球5のほぼ中心位置に定められた焦
点では、レーザ光の強いエネルギーによって封入ガスが
放電励起されるのに充分な強変の電磁場が生じ、放電に
よって□生じる封入ガスの高温プラズマから紫外・遠紫
外線を含むスペクトルの放射がなされる。この場合、放
電励起に寄与しなかったレーザ光は反射光学系部品6に
入射し、そこで反射されて再び管球内の焦点に集光され
る。
The laser beam from the laser oscillator 1 is formed into an appropriate beam shape by the optical system member 2.3, transmitted along a required optical path, and condensed by the condensing optical system member 4 to a focal position within the tube 5. get together. At the focal point set approximately at the center of the tube 5, the strong energy of the laser beam generates a sufficiently strong electromagnetic field to excite the filled gas to discharge, and the high temperature plasma of the filled gas generated by the discharge generates ultraviolet light. Radiation is provided in a spectrum that includes deep ultraviolet radiation. In this case, the laser light that did not contribute to discharge excitation enters the reflective optical system component 6, is reflected there, and is focused again on the focal point within the bulb.

本発明の光源装置はその発光強度およびスペクトルと発
光中心位置の安定性から特に半導体製造装置用に好適で
あり、そのような応用の具体例として第2図に露光装置
への適用例を示す。
The light source device of the present invention is particularly suitable for semiconductor manufacturing equipment due to its emission intensity, spectrum, and stability of the emission center position. As a specific example of such an application, an example of application to an exposure apparatus is shown in FIG.

第2図において第1図と同一符号は同効のものを示し、
さらに7は集・光用楕円ミラー、8は露光装置の照明光
学系装置、9はマスク、10はウェハである。管球5か
ら放射される遠紫外線が楕円ミラー7によって集光され
て照明光学系装置8によりマスク9上に投光されると、
マスク9の回路パターンがフォトレジストを塗布したウ
ェハ10に転写される。 ・ [発明の効果] 以上に述べたように、本発明によれば、封入ガスを管球
内でレーザ光により励起してプラメマ発光させるもので
あるから、管球内に電極を設ける必要がなく、従って電
極の存在に基づいて生じていた従来技術の諸問題点を一
挙に解決でき、発光強度およびスペクトルの経時変化の
少ない長寿命の光源装置が得られ、また発光中心位置も
管球に係わらず外部の集光用光学系の焦点位置で定まる
ので常に安定すると共に管球の交換によっても変化する
ことはなく、管球の交換が容易となるので様々な封入ガ
スの管球を用意しておいて種々のスペクトル分布の光源
光を選択的に入手Jるのも容易となるものである。
In Figure 2, the same symbols as in Figure 1 indicate the same thing,
Furthermore, 7 is an elliptical mirror for focusing and light, 8 is an illumination optical system device of an exposure apparatus, 9 is a mask, and 10 is a wafer. When the far ultraviolet rays emitted from the tube 5 are focused by the elliptical mirror 7 and projected onto the mask 9 by the illumination optical system device 8,
The circuit pattern of mask 9 is transferred to wafer 10 coated with photoresist. - [Effects of the Invention] As described above, according to the present invention, the sealed gas is excited with laser light within the tube to emit plasma light, so there is no need to provide electrodes within the tube. Therefore, the various problems of the conventional technology caused by the presence of electrodes can be solved all at once, and a long-life light source device with little change in emission intensity and spectrum over time can be obtained, and the emission center position can be changed regardless of the tube. Since it is determined by the focal position of the external condensing optical system, it is always stable and does not change even when the tube is replaced, making it easy to replace the tube, so you can prepare tubes with various filled gases. It also becomes easy to selectively obtain source light with various spectral distributions.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示す構成図、第2図はその
半導体製造装置への応用例を示す構成図である。 1:レーザ発振器、2.3:光学系部品、4:集光用光
学系部品、5:管球、6:反射光学系部材。
FIG. 1 is a block diagram showing an embodiment of the present invention, and FIG. 2 is a block diagram showing an example of its application to semiconductor manufacturing equipment. 1: Laser oscillator, 2.3: Optical system components, 4: Focusing optical system components, 5: Tube, 6: Reflective optical system components.

Claims (1)

【特許請求の範囲】 1、発光体としてのガス封入管球と、励起用レーザ発振
装置と、該レーザ発振装置からのレーザ光を前記管球内
に集光する光学系装置とを備え、集光されたレーザ光に
よって管球内の封入ガスを励起することにより発光させ
るようにしたことを特徴とする光源装置。 2、封入ガスが、希ガス、ハロゲンガス、アルゴンガス
、水銀蒸気などの紫外ないし遠紫外発光用ガスであり、
管球が、フッ化カルシウム、フッ化リチウム、フッ化マ
グネシウム、石英ガラス、サファイア等の紫外ないし遠
紫外域の光を透過する材料で構成されていることを特徴
とする特許請求の範囲第1項に記載の光源装置。
[Scope of Claims] 1. A gas-filled tube as a light emitting body, an excitation laser oscillation device, and an optical system device for condensing laser light from the laser oscillation device into the tube. 1. A light source device characterized in that the emitted laser light excites gas enclosed in a bulb to emit light. 2. The filled gas is a gas for ultraviolet or deep ultraviolet light emission such as rare gas, halogen gas, argon gas, mercury vapor,
Claim 1, characterized in that the bulb is made of a material that transmits light in the ultraviolet to deep ultraviolet region, such as calcium fluoride, lithium fluoride, magnesium fluoride, quartz glass, sapphire, etc. The light source device described in .
JP60032845A 1985-02-22 1985-02-22 Light source Pending JPS61193358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60032845A JPS61193358A (en) 1985-02-22 1985-02-22 Light source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60032845A JPS61193358A (en) 1985-02-22 1985-02-22 Light source

Publications (1)

Publication Number Publication Date
JPS61193358A true JPS61193358A (en) 1986-08-27

Family

ID=12370159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60032845A Pending JPS61193358A (en) 1985-02-22 1985-02-22 Light source

Country Status (1)

Country Link
JP (1) JPS61193358A (en)

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WO2007120521A2 (en) * 2006-03-31 2007-10-25 Energetiq Technology, Inc. Lazer-driven light source
WO2010002766A3 (en) * 2008-07-02 2010-03-04 Energetiq Technology, Inc. Energy-driven, e.g. laser-driven, light source
EP2172962A1 (en) * 2008-10-02 2010-04-07 Ushio Denki Kabushiki Kaisha Exposure device
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JP2010157443A (en) * 2008-12-27 2010-07-15 Ushio Inc Light source device
JP2010157625A (en) * 2008-12-27 2010-07-15 Ushio Inc Exposure apparatus
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