JPS61193030A - Infrared detector - Google Patents
Infrared detectorInfo
- Publication number
- JPS61193030A JPS61193030A JP3376485A JP3376485A JPS61193030A JP S61193030 A JPS61193030 A JP S61193030A JP 3376485 A JP3376485 A JP 3376485A JP 3376485 A JP3376485 A JP 3376485A JP S61193030 A JPS61193030 A JP S61193030A
- Authority
- JP
- Japan
- Prior art keywords
- infrared
- detecting element
- patterns
- heat insulation
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011347 resin Substances 0.000 claims abstract description 26
- 229920005989 resin Polymers 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000009413 insulation Methods 0.000 claims abstract description 16
- 239000000853 adhesive Substances 0.000 claims abstract description 6
- 230000001070 adhesive effect Effects 0.000 claims abstract description 6
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 230000035939 shock Effects 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000001514 detection method Methods 0.000 description 34
- 230000000694 effects Effects 0.000 description 7
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48092—Helix
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、非接触型温度検知、人体検知等に利用される
熱望赤外線検出器に関し、支持基板上に設けられた断熱
パターンによって赤外線検出素子を保持し、赤外線検出
素子の電極を導電性樹脂によって導出することにより、
外部振動、衝撃に対する強度及び赤外線検出素子に対す
る断熱作用を向上させるとともに、赤外線検出素子の破
壊、信号取出し線の断線等を確実に防止し、製造１組立
を容易化し、高性能化を図るようにしたものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an aspiration infrared detector used for non-contact temperature detection, human body detection, etc., in which an infrared detection element is held by a heat insulating pattern provided on a support substrate. However, by deriving the electrodes of the infrared detection element using conductive resin,
In addition to improving the strength against external vibrations and shocks and the insulation effect for the infrared detection element, it also reliably prevents damage to the infrared detection element and disconnection of the signal output wire, making manufacturing and assembly easier, and improving performance. This is what I did.
従来の技術
熱望赤外線検出器は赤外線を熱源として利用し、その発
熱作用による赤外線検出素子の温度変化を検出する方式
であり、赤外線検出素子としては、焦電素子、サーモパ
イル、サーミスタ等が利用される。何れの赤外線検出素
子を使用した場合でも、熱型赤外線検出器は、入射赤外
線をいかに効率良く信号発生のための熱エネルギーに変
換するかが重要な技術ボイドになる。熱型赤外線検出器
の感度は一般に赤外線検出素子の板厚に反比例するから
、感度を上げるためには、赤外線検出素子の板厚をでき
るだけ薄くする必要があり、従来より例えば２ Ｘ ２
Ｘ Ｏ，０５（ｍ／１１）程度の極く薄い赤外線検出
素子が使用されている。このため、赤外線検出素子は、
機械的強度が非常に低く簡単に破損してしまうから、支
持台上に固定して機械的強度を補強し、動作の安定性を
確保する必要がある。この場合、入射赤外線の熱作用で
赤外線検出素子に発生した熱が放散してしまうと、素子
に対する熱作用が有効に働かず、結果として検出感度が
低下してしまうこと、支持台の熱容量が赤外線検出素子
に比べて大き過ぎると、支持台の放熱作用及び蓄熱作用
により、赤外線の急激な断続変動に対する赤外線検出素
子の応答が鈍くなり、応答時間特性が低下すること等の
問題点を生じる。Conventional TechnologyAspiration Infrared detectors use infrared rays as a heat source and detect temperature changes in the infrared detection element due to the heat generation effect.As the infrared detection element, pyroelectric elements, thermopiles, thermistors, etc. are used. . No matter which infrared detecting element is used, an important technical void in thermal infrared detectors is how efficiently to convert incident infrared rays into thermal energy for signal generation. The sensitivity of a thermal infrared detector is generally inversely proportional to the thickness of the infrared detection element, so in order to increase the sensitivity, it is necessary to make the thickness of the infrared detection element as thin as possible.
An extremely thin infrared detection element of approximately X O,05 (m/11) is used. For this reason, the infrared detection element is
Since the mechanical strength is very low and it is easily damaged, it is necessary to reinforce the mechanical strength by fixing it on a support stand to ensure stability of operation. In this case, if the heat generated in the infrared detection element due to the thermal effect of the incident infrared rays is dissipated, the thermal effect on the element will not work effectively, resulting in a decrease in detection sensitivity, and the heat capacity of the support base will increase due to the infrared rays. If it is too large compared to the detection element, the response of the infrared detection element to rapid intermittent fluctuations in infrared rays becomes slow due to the heat dissipation and heat storage effects of the support, resulting in problems such as a decrease in response time characteristics.
これらの問題点を解決する従来技術としては、米国特許
４３２１３８１３３号及び実開昭５５−９４５３７号が
ある。まず、米国特許４３２ＥｉＥ１６３号明細書に開
示されたものは、第３図に示すように、赤外線検出素子
１をループ状のワイヤ２によって支持し、赤外線検出素
子１を放熱及び蓄熱作用の大きな底板３から浮かした構
造となっている。赤外線検出素子ｌの両面に設けた電極
１ａ、ｌｂの内、表側の電極１ａはリード＆！５によっ
てリード端子６に導通接続させ、電極１ｂは前記ワイヤ
２やリード線５等によってリード端子４に導通接続させ
である。Conventional techniques for solving these problems include US Pat. No. 4,321,38133 and Japanese Utility Model Application No. 55-94537. First, as shown in FIG. 3, the device disclosed in U.S. Pat. It has a floating structure. Of the electrodes 1a and lb provided on both sides of the infrared detection element l, the front electrode 1a is a lead &! The electrode 1b is electrically connected to the lead terminal 4 by the wire 2, the lead wire 5, etc.
７はケース、８は赤外線入射窓である。7 is a case, and 8 is an infrared incident window.
次に実開昭５５−９４５３７号に開示のものは、第４図
に示すように、アルミナ磁器等でなる薄い支持基板９の
中央部に穴ｌＯを形成すると共に、支持基板９を、底板
３から浮かした状態で、リード端子４．６上に支持し、
この支持基板９上に赤外線検出素子ｌの川辺部を接着固
定した構造となっている。赤外線検出素子１の信号取出
しは、電極ｌａ、ｌｂにリード線５を接続して行なう。Next, as shown in FIG. 4, in the device disclosed in Japanese Utility Model Application No. 55-94537, a hole lO is formed in the center of a thin support substrate 9 made of alumina porcelain, etc., and the support substrate 9 is connected to the bottom plate 3. Support it on the lead terminal 4.6 while floating from the
The structure is such that the riverside portion of the infrared detecting element 1 is adhesively fixed onto the support substrate 9. Signals from the infrared detection element 1 are extracted by connecting lead wires 5 to the electrodes la and lb.
発明が解決しようとする問題点
しかしながら、第３図に示した従来例は、５０ｇｍ程度
の極薄に加工した赤外線検出素子ｌをワイヤ２上に一枚
づつ固定するという煩雑かつ面倒な工程を必要とするた
め１組立作業が困難で、量産性に欠け、コスト高になる
欠点がある。また、赤外線検出素子１の支持面が小さく
、支持強度不足や赤外線検出素子１の傾斜等を招き、支
持が不安定になり易いこと、機械的強度が低く、振動、
衝撃等によって赤外線検出素子ｌがワイヤ２から脱落す
る等の事故を生じ易いこと等の欠点もあった。Problems to be Solved by the Invention However, the conventional example shown in FIG. 3 requires a complicated and troublesome process of fixing infrared detecting elements 1, which are processed to be ultra-thin about 50 gm, one by one on the wire 2. Because of this, it is difficult to assemble one piece, it lacks mass productivity, and it has the drawbacks of high cost. In addition, the supporting surface of the infrared detecting element 1 is small, resulting in insufficient support strength and inclination of the infrared detecting element 1, which tends to make the support unstable.
There is also a drawback that accidents such as the infrared detecting element 1 falling off the wire 2 due to impact or the like are likely to occur.
次に第４図に示した従来技術の場合は、赤外線検出素子
１の周辺部を支持基板９に支持固定できるので１強固な
支持構造が得られるが、赤外線検出素子１に発生した熱
が逃げ易いこと、支持基板９に穴１０を設けなければな
らないため、生産性が良くないこと１貫通して設けられ
た穴ｌＯを通して、支持基板９の表面側からも赤外線が
照射されるため、誤信号が発生してしまうこと等の問題
点がある。Next, in the case of the prior art shown in FIG. 4, the peripheral part of the infrared detecting element 1 can be supported and fixed to the support substrate 9, so a strong support structure is obtained, but the heat generated in the infrared detecting element 1 can escape. 1. Infrared rays are also irradiated from the surface side of the support substrate 9 through the hole 10 provided through the hole 10, resulting in false signals. There are problems such as the occurrence of
更に、第３図及び第４図の両者とも、赤外線検出素子ｌ
からの信号取出しのため、リード線５やワイヤ２等を赤
外線検出素子ｌの電極に半田付けする構造であるため、
極薄の赤外線検出素子ｌが半田付は工程において破壊さ
れたり、或いは信号取出線が断’ｆｊ２に故を起す等の
問題点もあった。Furthermore, in both FIGS. 3 and 4, the infrared detection element l
Because the structure is such that the lead wire 5, wire 2, etc. are soldered to the electrodes of the infrared detection element l in order to extract signals from the
There were also problems such as the ultra-thin infrared detection element l being destroyed during the soldering process, or the signal output line being broken.
問題点を解決するための手段
上述する問題点を解決するため、本発明に係る赤外線検
出器は、支持基板上に突出して設けられた断熱パターン
によって赤外線検出素子を保持し、この赤外線検出素子
の電極と前記支持基板上の導電パターンとを導電性樹脂
で接続したことを特徴とする特
作用
ｈ＋のように、本発明に係る赤外線検出器は、支持基板
りに突出して設けられた断熱パターンによって赤外線検
出素子を保持しであるので、赤外線検出素子の支持安定
性及び支持強度が高くなり、外部振動及び衝撃に対して
強くなると同時に、赤外線検出素子と支持基板の面との
間に前記断熱パターンの高さに応じた間隙が形成され、
この間隙が断熱層となり、赤外線入射により赤外線検出
素子に発生した熱が支持基板に暮げるのを阻止し、感度
及び応答時間特性を向上させることができる。Means for Solving the Problems In order to solve the above-mentioned problems, an infrared detector according to the present invention holds an infrared detecting element by a heat insulating pattern provided protrudingly on a support substrate, and the infrared detecting element is Like the special effect h+, which is characterized in that the electrode and the conductive pattern on the support substrate are connected with a conductive resin, the infrared detector according to the present invention has Since the infrared detecting element is held, the support stability and support strength of the infrared detecting element are high, and it is strong against external vibrations and shocks. A gap is formed according to the height of
This gap serves as a heat insulating layer, which prevents heat generated in the infrared detecting element due to the incidence of infrared rays from being absorbed into the support substrate, thereby improving sensitivity and response time characteristics.
更に上記構成に加えて、赤外線検出素子の電極と前記支
持基板上の導電パターンとを導電性樹脂で接続したこと
により、赤外線検出素子からの信号取出しに当って、そ
の電極にワイヤーまたはリード線等の信号取出し線を半
田付けする必要がなくなる。従って、赤外線検出素子の
破壊や信号取出し線の断線事故等を起すことがなくなり
、信頼性が向上する。しかも、導電性樹脂は接着材とし
ても使用できるから、これを利用して断熱パターン上に
赤外線検出素子を接着固定する等の手段をとり、赤外線
検出素子の固定、断熱及び電極引出しを同時に行なう構
造をとることも可能になり、製造、組立を容易化し、信
頼性を向上させることも可能である。Furthermore, in addition to the above configuration, the electrode of the infrared detection element and the conductive pattern on the support substrate are connected with a conductive resin, so that when extracting a signal from the infrared detection element, a wire or lead wire etc. is connected to the electrode. There is no need to solder the signal output wires. Therefore, damage to the infrared detection element and disconnection of the signal output line will not occur, and reliability will be improved. Furthermore, since conductive resin can also be used as an adhesive, it can be used to adhesively fix the infrared detecting element on the heat insulating pattern, thereby creating a structure that simultaneously fixes the infrared detecting element, insulates the infrared detecting element, and draws out the electrodes. This makes it possible to simplify manufacturing and assembly, and improve reliability.
実施例
第１図は本発明に係る赤外線検出器の要部の平面図、第
２図は同じくその正面部分断面図である。図において、
第３図及び第４図と同一の参照符号は同一性ある構成部
分を示している。この実施例では、アルミナ磁器等を用
いて平板状に形成した絶縁性の支持基板９の一面上に、
部分的に突出するドーム状の断熱パターン１１〜１４を
形成し、断熱パターン１１〜１４の上に赤外線検出素子
１を取付けである。断熱パターン１１−１４はチクソト
ロピック性の高い樹脂によって形成することが望ましい
、従って、赤外線検出素子１は、支持基板９から前記断
熱パターン１１−１４の高さＨだけ浮いた状態で支持さ
れることとなる。高さＨは通常の赤外線検出器では５０
ｇｍ以上の値が適当である。また、断熱パターン１１〜
１４は、この実施例では、矩形状である赤外線検出素子
１の形状及び大きさ等に合わせて四箇所に設けてあり、
赤外線検出素子ｌを四隅部で支持するようになっている
。Embodiment FIG. 1 is a plan view of essential parts of an infrared detector according to the present invention, and FIG. 2 is a front partial sectional view thereof. In the figure,
The same reference numerals as in FIGS. 3 and 4 indicate identical components. In this embodiment, on one surface of an insulating support substrate 9 formed into a flat plate using alumina porcelain or the like,
Dome-shaped heat insulating patterns 11 to 14 that partially protrude are formed, and an infrared detecting element 1 is mounted on top of the heat insulating patterns 11 to 14. It is desirable that the heat insulating patterns 11-14 be formed of resin with high thixotropic properties. Therefore, the infrared detecting element 1 should be supported in a state floating from the support substrate 9 by the height H of the heat insulating patterns 11-14. becomes. The height H is 50 for a normal infrared detector.
A value of gm or more is appropriate. In addition, insulation pattern 11~
14 are provided at four locations in accordance with the shape and size of the infrared detecting element 1, which is rectangular in this embodiment.
The infrared detection element l is supported at the four corners.
断熱パターン１１−１４に対する赤外線検出素子ｌの取
付けに当っては、断熱パターン１１〜１４の表面に導電
性樹脂１５を塗布し、この導電性樹脂１５を接着材とし
て、赤外線検出素子１の下面側を断熱パターン１１〜１
４にｖｃ着固定する。別の例として、断熱パターン１１
〜１４と導電性樹脂１５とを別々にするのではなく、断
熱パターン１１〜１４を導電性樹脂によって形成して一
体化することも可能である。When attaching the infrared detecting element l to the heat insulating patterns 11-14, conductive resin 15 is applied to the surface of the heat insulating patterns 11 to 14, and the conductive resin 15 is used as an adhesive to attach the underside of the infrared detecting element 1. Insulation pattern 11-1
Fix the VC on 4. As another example, the insulation pattern 11
14 and the conductive resin 15, it is also possible to form the heat insulation patterns 11 to 14 from the conductive resin and integrate them.
導電性樹脂１５による赤外線検出素子１のｖｃＲ固定は
、その電極部分で行なう０例えば、赤外線検出素子ｌの
電極１ａ〜ＩＣのうち、下面側に形成された電極１ａ、
１ｂが外部へ引出される電極である場合、この電極１ａ
、ｌｂを、導電性樹脂１５によって断熱パターン１１．
１２上に接着固定するのである。そして、導電性樹脂１
５を、支持基板９の−Ｆに形成した導電パターン１６．
１７に導通接続させることにより、赤外線検出素子１の
電極１ａ、ｌｂからの信号を、導電性樹脂１５を通して
導電パターン１６．１７に取出す、この実施例では、４
つの断熱パターン１１〜１４のうち、断熱パターン１１
及び１２は支持基板９の表面上に互いに独立して形成し
た導電パターン１６．１７の上に形成してあり、断熱パ
ターン１１及び１２の導電性樹脂１５を導電パターン１
６．１７に導通接続させである。The vcR fixation of the infrared detection element 1 by the conductive resin 15 is performed at its electrode portion. For example, among the electrodes 1a to IC of the infrared detection element 1, the electrode 1a formed on the lower surface side
If 1b is an electrode drawn out, this electrode 1a
, lb are formed into a heat insulating pattern 11. by conductive resin 15.
12 and fixed with adhesive. And conductive resin 1
A conductive pattern 16.5 formed on -F of the support substrate 9.
In this embodiment, the signals from the electrodes 1a and 1b of the infrared detection element 1 are taken out to the conductive patterns 16 and 17 through the conductive resin 15 by making conductive connection to the conductive patterns 16 and 17.
Among the three insulation patterns 11 to 14, insulation pattern 11
and 12 are formed on conductive patterns 16 and 17 formed independently of each other on the surface of the support substrate 9, and the conductive resin 15 of the heat insulating patterns 11 and 12 is connected to the conductive pattern 1.
6.17 is connected for conduction.
上述のように、断熱パターン１１〜１４によってその高
さＨだけ支持基板９から浮かした状態で赤外線検出素子
ｌを支持すると、赤外線検出素子ｌの下面と支持基板９
の上面との間に前記断熱パターン１１〜１４の高さＨに
応じた間隙が形成され、間隙Ｈが断熱層として働くので
、赤外線照射により赤外線検出素子１に発生した熱が支
持基板９に放散するのを阻止し、赤外線検出素子１の感
度及び応答時間特性を向上させることができる。As described above, when the infrared detecting element l is supported by the heat insulating patterns 11 to 14 in a state where it is suspended from the support substrate 9 by the height H, the lower surface of the infrared detecting element l and the support substrate 9
A gap corresponding to the height H of the heat insulating patterns 11 to 14 is formed between the upper surface and the heat insulating pattern 11 to 14, and since the gap H acts as a heat insulating layer, the heat generated in the infrared detecting element 1 due to infrared irradiation is dissipated to the support substrate 9. This makes it possible to improve the sensitivity and response time characteristics of the infrared detection element 1.
しかも、赤外線検出素子１を断熱パターン１１〜１４上
に保持させたことにより、赤外線検出素子ｌの支持安定
性が高くなり、外部振動及び衝撃に対して強くなる。Moreover, by holding the infrared detecting element 1 on the heat insulating patterns 11 to 14, the support stability of the infrared detecting element 1 is increased, and the infrared detecting element 1 is resistant to external vibrations and shocks.
また、赤外線検出素子ｌの電極と支持基板９上の導電パ
ターン１６．１７とを、導電性樹脂１５で接続したこと
により、赤外線検出素子１の信号取出しに当って、ワイ
ヤーまたはリード線等の信号取出し線を半田付けする必
要がなくなる。従って、赤外線検出素子１の破壊や信号
取出し線の断線事故等を起すことがなくなり、信頼性が
向上する。In addition, by connecting the electrodes of the infrared detecting element 1 and the conductive patterns 16, 17 on the support substrate 9 with the conductive resin 15, when taking out the signal of the infrared detecting element 1, the signal of the wire or lead wire, etc. There is no need to solder the lead wire. Therefore, damage to the infrared detecting element 1, breakage of the signal output line, etc. will not occur, and reliability will be improved.
更に、導電性樹脂１５を接着材として、赤外線検出素子
ｌを断熱パターン１１〜１４に接若固定したから、赤外
線検出素子ｌの支持安定性及び支持強度が高くなり、外
部振動及び衝撃に対して強くなると共に、赤外線検出素
子ｌの固定、断熱及び電極引出しを同時に行ない、製造
１組立を容易化し、信頼性を向上させることかできる。Furthermore, since the infrared detecting element l is attached or fixed to the heat insulating patterns 11 to 14 using the conductive resin 15 as an adhesive, the support stability and support strength of the infrared detecting element l are increased, and it is resistant to external vibrations and shocks. In addition to being strong, it is possible to fix the infrared detection element l, heat insulation, and draw out the electrodes at the same time, simplifying manufacturing and assembly, and improving reliability.
発明の効果
以上述べたように、本発明によれば、赤外線検出素子の
支持安定性及び支持強度が高く、外部振動及び衝撃に対
して強く、赤外線検出素子に発生した熱が支持基板に逃
げるのを阻止し、感度及び応答時間特性を向上させるこ
とができ、しかも赤外線検出素子の破壊や信号取出し線
の断線事故等を起すことがなく、信頼性の高い製造組立
の容易な赤外線検出器を提供できる。Effects of the Invention As described above, according to the present invention, the infrared detection element has high support stability and support strength, is resistant to external vibrations and shocks, and prevents heat generated in the infrared detection element from escaping to the support substrate. Provides an infrared detector that is easy to manufacture and assemble, is highly reliable, and can improve sensitivity and response time characteristics without causing damage to the infrared detection element or disconnection of the signal output line. can.
第１図は本発明に係る赤外線検出器の要部の平面図、第
２図は同じくその正面部分断面図、第３図は従来の赤外
線検出器の正面部分断面図、第４図は同じく別の従来例
の正面部分断面図である。
１・ｅ・赤外線検出素子 ９・・櫓支持基板１１〜１
４・・・断熱パターン
１５・・・導電性樹脂
１６．１７舎・・導電パターン
第１図FIG. 1 is a plan view of essential parts of an infrared detector according to the present invention, FIG. 2 is a front partial sectional view thereof, FIG. 3 is a front partial sectional view of a conventional infrared detector, and FIG. 4 is a separate front view. FIG. 2 is a front partial sectional view of a conventional example. 1.e.Infrared detection element 9.. Tower support board 11-1
4...Heat insulation pattern 15...Conductive resin 16.17...Conductive pattern Figure 1
Claims (5)
ンによって赤外線検出素子を保持し、この赤外線検出素
子の電極と前記支持基板上の導電パターンとを導電性樹
脂で接続したことを特徴とする赤外線検出器。(1) The infrared detecting element is held by a heat insulating pattern provided protrudingly on the surface of the support substrate, and the electrode of the infrared detecting element and the conductive pattern on the support substrate are connected with a conductive resin. Infrared detector.
熱パターンとを接着する接着材として兼用されることを
特徴とする特許請求の範囲第１項に記載の赤外線検出器
。(2) The infrared detector according to claim 1, wherein the conductive resin is also used as an adhesive for bonding the infrared detecting element and the heat insulation pattern.
布されることを特徴とする特許請求の範囲第１項または
第２項に記載の赤外線検出器。(3) The infrared detector according to claim 1 or 2, wherein the conductive resin is applied to the surface of the heat insulation pattern.
を特徴とする特許請求の範囲第１項または第２項に記載
の赤外線検出器。(4) The infrared detector according to claim 1 or 2, wherein the heat insulation pattern is made of the conductive resin.
パターン上にかかるように形成されることを特徴とする
特許請求の範囲第１項、第２項、第３項または第４項に
記載の赤外線検出器。(5) The heat insulating pattern is formed so that at least a portion thereof overlaps the conductive pattern. Infrared detector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3376485A JPS61193030A (en) | 1985-02-22 | 1985-02-22 | Infrared detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3376485A JPS61193030A (en) | 1985-02-22 | 1985-02-22 | Infrared detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61193030A true JPS61193030A (en) | 1986-08-27 |
Family
ID=12395502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3376485A Pending JPS61193030A (en) | 1985-02-22 | 1985-02-22 | Infrared detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61193030A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5047644A (en) * | 1989-07-31 | 1991-09-10 | Texas Instruments Incorporated | Polyimide thermal isolation mesa for a thermal imaging system |
| US5231289A (en) * | 1991-04-22 | 1993-07-27 | Shimadzu Corporation | Thermal photodetector and method of manufacturing the same |
| US5497002A (en) * | 1994-10-24 | 1996-03-05 | Servo Corporation Of America | Pyroelectric crystal element and array mounting method |
| US5625188A (en) * | 1993-10-29 | 1997-04-29 | Murata Manufacturing Co., Ltd. | Pyroelectric infrared array sensor |
| US6175114B1 (en) | 1993-10-29 | 2001-01-16 | Murata Manufacturing Co., Ltd. | Pyroelectric infrared array sensor |
| JP2015064219A (en) * | 2013-09-24 | 2015-04-09 | 株式会社センサーズ・アンド・ワークス | Pyroelectric infrared sensor |
| CN108091721A (en) * | 2017-12-11 | 2018-05-29 | 阜阳师范学院 | A kind of photodetector and preparation method in silicon based opto-electronics IC chip |
-
1985
- 1985-02-22 JP JP3376485A patent/JPS61193030A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5047644A (en) * | 1989-07-31 | 1991-09-10 | Texas Instruments Incorporated | Polyimide thermal isolation mesa for a thermal imaging system |
| US5231289A (en) * | 1991-04-22 | 1993-07-27 | Shimadzu Corporation | Thermal photodetector and method of manufacturing the same |
| US5625188A (en) * | 1993-10-29 | 1997-04-29 | Murata Manufacturing Co., Ltd. | Pyroelectric infrared array sensor |
| US6175114B1 (en) | 1993-10-29 | 2001-01-16 | Murata Manufacturing Co., Ltd. | Pyroelectric infrared array sensor |
| US5497002A (en) * | 1994-10-24 | 1996-03-05 | Servo Corporation Of America | Pyroelectric crystal element and array mounting method |
| JP2015064219A (en) * | 2013-09-24 | 2015-04-09 | 株式会社センサーズ・アンド・ワークス | Pyroelectric infrared sensor |
| CN108091721A (en) * | 2017-12-11 | 2018-05-29 | 阜阳师范学院 | A kind of photodetector and preparation method in silicon based opto-electronics IC chip |
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