JPS61190029A - Alloy having variable spectral reflectance and recording material - Google Patents
Alloy having variable spectral reflectance and recording materialInfo
- Publication number
- JPS61190029A JPS61190029A JP60030414A JP3041485A JPS61190029A JP S61190029 A JPS61190029 A JP S61190029A JP 60030414 A JP60030414 A JP 60030414A JP 3041485 A JP3041485 A JP 3041485A JP S61190029 A JPS61190029 A JP S61190029A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- temperature
- spectral reflectance
- crystal structure
- recording material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24308—Metals or metalloids transition metal elements of group 11 (Cu, Ag, Au)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/2431—Metals or metalloids group 13 elements (B, Al, Ga, In)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
- G11B7/0045—Recording
- G11B7/00454—Recording involving phase-change effects
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は新規な分光反射率可変合金及び記録材料に係り
、特に光・熱エネルギーが与えられることにより合金の
結晶構造の変化にともなう分光反射率変化を利用した情
報記録、表示、センサ等の媒体に使用可能な合金に関す
る。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a novel alloy with variable spectral reflectance and a recording material, and in particular to a novel alloy with variable spectral reflectance and a recording material, and in particular, the spectral reflectance of the alloy changes as the crystal structure of the alloy changes due to the application of light and thermal energy. This invention relates to alloys that can be used as media for information recording, display, sensors, etc. that utilize change.
近年、情報記録の高密度化、デジタル化が進むにつれて
種々の情報記録再生方式の開発が進められている。特に
レーザの光エネルギを情報の記録。In recent years, as information recording becomes more dense and digital, various information recording and reproducing methods are being developed. Especially for recording information using laser light energy.
消去、再生に利用した光ディスクは工業レアメタルNC
L80 、1983 (光ディスクと材料)に記載され
ているように磁気ディスクに比べ、高い記録密度が可能
であり、今後の情報記録の有方な方式である。このうち
、レーザによる再生装置はコンパクト・ディスク(CD
)として実用化されている。The optical disc used for erasure and playback is industrial rare metal NC.
As described in L80, 1983 (Optical Disks and Materials), higher recording densities are possible than magnetic disks, and this is a viable method for information recording in the future. Of these, laser playback devices are used to play compact discs (CDs).
) has been put into practical use.
一方、記録可能な方式には追記型と書き換え可能型の大
きく2つに分けられる。前者は1回の書き込みのみが可
能であり、消去はできない、後者はくり返しの記録、消
去が可能な方式である。追記型の記録方法はレーザ光に
より記録部分の媒体を破壊あるいは成形して凹凸をっけ
、再生にはこの凹凸部分でのレーザ光の干渉による光反
射量の変化を利用する。この記録媒体にはTeやその合
金を利用して、その溶解、昇華による凹凸の成形が一般
的に知られている。この種の媒体では毒性など若干の問
題を含んでいる。書き換え可能型の記録媒体としては光
磁気材料が主流である。この方法は光エネルギを利用し
てキュリ一点あるいは補償点温度付近で媒体の局部的な
磁気異方性を反転させ記録し、その部分での偏光入射光
の磁気ファラデー効果及び磁気カー効果による偏光面の
回転量にて再生する。この方法は書き換え可能型の最も
有望なものとして数年後の実用化を目指し精力的な研究
開発が進められている。しかし、現在のところ偏光面の
回転量の大きな材料がなく多層膜化などの種々の工夫を
してもS/N、C/Nなどの出力レベルが小さいという
大きな問題がある。On the other hand, recordable methods can be broadly divided into two types: write-once type and rewritable type. The former allows writing only once and cannot be erased, while the latter allows repeated recording and erasing. In the write-once recording method, a laser beam is used to destroy or shape the medium in the recording area to create unevenness, and for reproduction, a change in the amount of light reflected due to the interference of the laser beam at the uneven area is used for reproduction. For this recording medium, it is generally known that Te or its alloy is used to form irregularities by melting and sublimating Te. This type of medium has some problems such as toxicity. Magneto-optical materials are the mainstream for rewritable recording media. This method uses optical energy to invert and record the local magnetic anisotropy of the medium near the Curie point or the compensation point temperature, and the polarization plane of the polarized incident light at that part is caused by the magnetic Faraday effect and magnetic Kerr effect. Play with the amount of rotation. This method is considered to be the most promising rewritable method, and active research and development is underway with the aim of putting it into practical use in the next few years. However, there is currently no material with a large amount of rotation of the plane of polarization, and even with various measures such as multilayer film formation, there is a big problem that output levels such as S/N and C/N are low.
その他の書き換え可能型方式として記録媒体の非のGe
およびSnを添加した合金がある。Other rewritable methods include non-Ge recording media.
There are also alloys to which Sn is added.
しかし、この方式は非晶質相の結晶化部が低く、常温に
おける相の不安定さがディスクの信頼性に結びつく大き
な問題点である。However, this method has a major problem in that the crystallization portion of the amorphous phase is low, and the instability of the phase at room temperature affects the reliability of the disk.
一方、色調変化を利用した合金として、特開昭57−1
40845がある。この合金は(12〜15−)wt%
A 12− (1〜5 ) w t%Ni−残Cuより
なる合金でマルテンサイト変態温度を境にして、赤から
黄金色に可逆的に変化することを利用したものである。On the other hand, as an alloy utilizing color tone change, JP-A-57-1
There are 40845. This alloy is (12-15-)wt%
A 12- (1-5) is an alloy consisting of wt% Ni and residual Cu, and utilizes the fact that it reversibly changes from red to golden yellow at the martensitic transformation temperature.
マルテンサイト変態は温度の低下にともなって必然的に
生ずる変態のため、マルテンサイト変態温度以上に保持
した状態で得られる色調はマルテンサイト変調温度以下
にもってくることはできない。また逆にマルテンサイト
変態温度以下で得られる色調のものをマルテンサイト変
態温度以上にすると、変態をおこして別の色調に変化し
てしまう、したがって、マルテンサイト変態の上下でお
こる2つの色調は同一温度で同時に得ることはできない
、したがってこの原理では記録材料として適用すること
はできない。Since martensitic transformation is a transformation that inevitably occurs as the temperature decreases, the color tone obtained when the temperature is maintained above the martensitic transformation temperature cannot be brought below the martensitic modulation temperature. Conversely, if a color tone obtained below the martensitic transformation temperature is raised above the martensitic transformation temperature, it will undergo transformation and change to a different tone. Therefore, the two hues that occur above and below the martensitic transformation are the same. temperature cannot be obtained at the same time, so this principle cannot be applied as a recording material.
本発明の目的は、同一温度で部分的に異なった分光反射
率を保持することのできる分光反射率可変合金及び記録
材料を提供するにある。An object of the present invention is to provide a variable spectral reflectance alloy and a recording material that can maintain partially different spectral reflectances at the same temperature.
(発明の要旨)
本発明は金を主成分とし重量でガリウム10〜15%を
含む合金、更にLA、2A、4A、5A。(Summary of the Invention) The present invention provides an alloy mainly composed of gold and containing 10 to 15% gallium by weight, and furthermore LA, 2A, 4A, and 5A.
6A、7A、8.1B、2B、3B、4B、5B族、希
土類の1種または2種以上を合計で15重量%以下を含
む合金からなることを特徴とする分光反射率可変合金に
ある。ガリウムは11〜13%が好ましい。The variable spectral reflectance alloy is characterized by comprising an alloy containing a total of 15% by weight or less of one or more of 6A, 7A, 8.1B, 2B, 3B, 4B, 5B group, and rare earth elements. Gallium is preferably 11 to 13%.
即ち、本発明は、固体状態で室温より高い第1の温度(
高温)及び第1の温度より低し)温度(低温)状態で異
なった結晶構造を有する合金におし1て、該合金は前記
高温からの急冷によって前記低温における非急冷による
結晶構造と異なる結晶溝環を有することを特徴とする分
光反射率可変合金にある。That is, the present invention provides a first temperature higher than room temperature (
In an alloy having a different crystal structure at a temperature (higher temperature) and lower temperature (lower temperature than a first temperature), the alloy has a crystal structure different from that obtained by quenching from the high temperature than that obtained by non-quenching at the low temperature. A variable spectral reflectance alloy is characterized by having a groove ring.
本発明合金は固相状態での加熱冷却処理により。The alloy of the present invention is heated and cooled in a solid state.
同一温度で少なくとも2種の分光反射率を有し。It has at least two types of spectral reflectance at the same temperature.
可逆的に分光反射率を変えることのできるものである。The spectral reflectance can be changed reversibly.
すなわち、本発明に係る合金は面相状態で少なくとも2
つの温度領域で結晶構造の異なった相を有し、それらの
内、高温相を急冷した状態と非急冷の標準状態の低温相
状態とで分光反射率が異なり、高温和温度領域での加熱
急冷と低温相温度領域での加熱冷却、により分光反射率
が可逆的に変化するものである。That is, the alloy according to the present invention has a phase state of at least 2
It has phases with different crystal structures in two temperature ranges, and among these, the spectral reflectance is different between the quenched state of the high temperature phase and the low temperature phase state of the non-quenched standard state. The spectral reflectance changes reversibly by heating and cooling in the low phase temperature region.
本発明合金の可逆的反射率の変化についてその原理を第
1図を用いて説明する0図はAu Ga二元系合金の
状態図でありα固溶体とβ、γ金属間化合物が存在する
。へ組成の合金を例にとると。The principle of reversible change in reflectance of the alloy of the present invention will be explained with reference to FIG. 1. FIG. 0 is a phase diagram of a binary Au-Ga alloy, in which an α solid solution and β and γ intermetallic compounds are present. Take an example of an alloy with a composition of .
この合金は固相状態において、β単相、(β+γ)相及
び(α+γ)相がある。結晶構造はα、β。In the solid state, this alloy has a β single phase, a (β+γ) phase, and an (α+γ) phase. The crystal structure is α, β.
γのそれぞれ単相状態で異なり、これら単独及び混合相
においてそれぞれ光学的性質、たとえば分光反射率は異
なる。このような合金はT工温度、一般的に室温である
が、(α+γ)相が安定である。これをT4温度まで加
熱急冷するとβ相がT1温度まで急冷する。この状態は
(α+γ)相とは異なるため5分光反射率も異なってく
る。この急冷β相合金をTO温度以下のT2温度まで加
熱冷却するとβ相は(α+γ)相に変態し、分光反射率
は最初の状態に戻る。このような2つの加熱冷却処理を
繰返すことにより、分光反射率を可逆的に変化させるこ
とが可能である。The single phase state of γ is different, and the optical properties, such as spectral reflectance, are different in these single phase and mixed phase. In such an alloy, the (α+γ) phase is stable at the T temperature, generally room temperature. When this is heated and rapidly cooled to T4 temperature, the β phase is rapidly cooled to T1 temperature. Since this state is different from the (α+γ) phase, the 5-spectral reflectance is also different. When this rapidly cooled β-phase alloy is heated and cooled to a T2 temperature below the TO temperature, the β phase transforms into an (α+γ) phase, and the spectral reflectance returns to its initial state. By repeating such two heating and cooling processes, it is possible to reversibly change the spectral reflectance.
(合金組成)
本発明合金は、高温及び低温状態で異なった結晶構造を
有するもので、高温からの急冷によってその急冷された
結晶構造が形成されるものでなければならない、更に、
この急冷されて形成された相は所定の温度での加熱によ
って低温状態での結晶構造に変化するものでなければな
らな−1゜これらの観点から金を主成分とし、重量でガ
リウム10〜15%を含む合金組成が好ましい、さらに
、高温の金属間化合物が安定で分光反射率の変化温度、
すなわち同相変態点を用途によって任意にコントロール
する点からは1A、2A、4A。(Alloy Composition) The alloy of the present invention must have different crystal structures at high and low temperatures, and the rapidly cooled crystal structure must be formed by rapid cooling from a high temperature.
The phase formed by this rapid cooling must be able to change into the crystalline structure at a low temperature by heating at a predetermined temperature. % is preferable, furthermore, the intermetallic compound is stable at high temperatures and the temperature at which the spectral reflectance changes,
That is, 1A, 2A, and 4A from the point of view that the in-phase transformation point can be controlled arbitrarily depending on the application.
5A、6A、7A、8.1B、2B、3B、4B。5A, 6A, 7A, 8.1B, 2B, 3B, 4B.
5B族元素及び希土類の1種または2種以上の元素を合
計で15重量%以下を含む合金が良好である。具体的に
は、IA族の元素としてリチウム、2A族はマグネシウ
ム、カルシウム、4A族はチタン、ジルコニウム、ハフ
ニウム、5A族はノ(ナジウム、ニオブ、タンタル、6
A族はクロム、モリブデン、タングステン、7A族はマ
ンガン、8族はコバルト、ロジウム、イリジウム、鉄、
ルテニウム、オスミウム、ニッケル、パラジウム、白金
、IB族は銅、銀、2B族は亜鉛、カドミウム、3B族
はホウ素、アルミニウム、インジウム。An alloy containing a total of 15% by weight or less of one or more of Group 5B elements and rare earth elements is good. Specifically, Group IA elements include lithium, Group 2A elements include magnesium and calcium, Group 4A elements include titanium, zirconium, and hafnium, and Group 5A elements include sodium, niobium, tantalum, and
Group A is chromium, molybdenum, tungsten, Group 7A is manganese, Group 8 is cobalt, rhodium, iridium, iron,
Ruthenium, osmium, nickel, palladium, platinum, group IB is copper and silver, group 2B is zinc, cadmium, group 3B is boron, aluminum, indium.
4B族は炭素、ケイ素、ゲルマニウム、スズ、鉛、5B
族はリン、アンチモン、ビスマス、希土類としてはイツ
トリウム、ランタン、セリウム、サマリウム、ガドリニ
ウム、テレビウム、ジスプロシウム、ルテチウムが特に
好ましい。Group 4B is carbon, silicon, germanium, tin, lead, and 5B.
Particularly preferred are phosphorus, antimony, and bismuth, and among the rare earth elements are yttrium, lanthanum, cerium, samarium, gadolinium, terephium, dysprosium, and lutetium.
(ノンバルクとその製造法)
本発明合金は反射率の可変性を得るために材料の加熱急
冷によって適冷相を形成できるものが必要である。高速
で情報の製作及び記憶させるには材料の急熱急冷効果の
高い熱容量の小さいノンバルクが望ましい、即ち、所望
の微小面積に対して投入されたエネルギーによって実質
的に所望の面積部分だけが深さ全体にわたって基準とな
る結晶構造と異なる結晶構造に変り得る容積を持つノン
バルクであることが望ましい、従って、所望の微小面積
によって高密度の情報を製作するには、熱容量の小さい
ノンバルクである箔、膜、細線あるいは粉末等が望まし
い、記録密度として、20メガビット/d以上となるよ
うな微小面積での情報の製作には0.01〜0.2μm
の膜厚とするのがよい。一般に金属間化合物は塑性加工
が難しい。(Non-bulk and manufacturing method thereof) In order to obtain reflectance variability, the alloy of the present invention must be capable of forming an appropriately cooled phase by heating and rapidly cooling the material. In order to create and store information at high speed, it is desirable to use a non-bulk material with a high rapid heating and cooling effect and a small heat capacity.In other words, the energy applied to a desired minute area allows the depth of only the desired area to be reduced. It is desirable to have a non-bulk material that has a volume that can change to a crystal structure different from the standard crystal structure throughout.Therefore, in order to produce high-density information in a desired micro area, non-bulk foils and films with small heat capacities are required. , thin wire or powder is preferable, and 0.01 to 0.2 μm is required for producing information in a minute area with a recording density of 20 megabits/d or more.
It is preferable to set the film thickness to . Generally, intermetallic compounds are difficult to plastically work.
従って、箔、膜、細線あるいは粉末にする手法として材
料を気相あるいは液相から直接急冷固化させて所定の形
状にすることが有効である。これらの方法にはPVD法
(蒸着、スパッタリング法等)、CVD法、溶湯を高速
回転する高熱伝導性を有する部材からなる。特に金属ロ
ール円周面上に注湯して急冷凝固させる溶湯急冷法、電
気メッキ、化学メッキ法等がある。膜あるいは粉末状の
材料を利用する場合、基板上に直接形成するか、塗布し
て基板上に接着することが効果的である。塗布する場合
、粉末を加熱しても反応などを起こさないバインダーが
よい、また、加熱による材料の酸化等を防止するため、
材料表面、基板上に形成した膜あるいは塗布層表面をコ
ーティングすることも有効である。Therefore, it is effective to directly rapidly cool and solidify the material from the gas phase or liquid phase to form it into a predetermined shape as a method for producing foil, film, thin wire, or powder. These methods include a PVD method (vapor deposition, sputtering method, etc.), a CVD method, and a member having high thermal conductivity that rotates the molten metal at high speed. In particular, there are molten metal quenching methods in which molten metal is poured onto the circumferential surface of a metal roll and rapidly solidified, electroplating methods, chemical plating methods, and the like. When using a film or powder material, it is effective to form it directly on the substrate or to apply it and adhere it to the substrate. When coating, it is best to use a binder that does not cause a reaction even when the powder is heated, and to prevent oxidation of the material due to heating.
It is also effective to coat the surface of a material, a film formed on a substrate, or a coating layer.
箔又は細線は溶湯急冷法によって形成するのが好ましく
、厚さ又は直径0.1m以下が好ましい。The foil or thin wire is preferably formed by a molten metal quenching method, and preferably has a thickness or diameter of 0.1 m or less.
特に0.1μ覆以下の結晶粒径の箔又は細線を製造する
には0.05mm以下の厚さ又は直径が好ましい。In particular, in order to produce foil or fine wire with a crystal grain size of 0.1 μm or less, a thickness or diameter of 0.05 mm or less is preferred.
粉末は、溶湯を気体又は液体の冷媒とともに噴霧させて
水中に投入させて急冷するガイアトマイズ法によって形
成させることが好ましい、その粒径はO,1m以下が好
ましく、特に粒径1μm以下の超微粉が好ましい。The powder is preferably formed by the Gaia atomization method in which molten metal is sprayed with a gas or liquid refrigerant and then poured into water to be rapidly cooled.The particle size is preferably 0.1 m or less, particularly ultrafine powder with a particle size of 1 μm or less. is preferred.
膜は前述の如く蒸着、スパッタリング、CVD電気メッ
キ、化学メッキ等によって形成できる。The film can be formed by vapor deposition, sputtering, CVD electroplating, chemical plating, etc., as described above.
特に、0.1μ亀以下の膜厚を形成するにはスパッタリ
ングが好ましい、スパッタリングは目標の合金組成のコ
ントロールが容易にできる。In particular, sputtering is preferable to form a film with a thickness of 0.1 μm or less, and sputtering allows easy control of the target alloy composition.
(組織)
本発明合金は、高温及び低温において異なる結晶構造を
有し、高温からの急冷によって高温における結晶構造を
低温で保持される急冷相の組成を有するものでなければ
ならない、高温では不規則格子の結晶構造を有するが、
急冷相は一例として規則格子を有する金属間化合物が好
ましい、光学的性質を大きく変化させることのできるも
のとして本発明合金はこの金属間化合物を主に形成する
合金が好ましく、特に合金全体が金属間化合物を形成す
る組成が好ましい。この金属間化合物は電子化合物と呼
ばれ、特に3/2電子化合物(平均外殻電子濃度θ/a
が3/2)の合金組成付近のものが良好である。(Structure) The alloy of the present invention has different crystal structures at high and low temperatures, and must have a composition of a quenched phase in which the crystal structure at high temperature is maintained at low temperature by quenching from high temperature, and is irregular at high temperature. It has a lattice crystal structure, but
For example, the quenched phase is preferably an intermetallic compound having a regular lattice.As the optical properties can be greatly changed, the alloy of the present invention is preferably an alloy that mainly forms this intermetallic compound.In particular, the alloy as a whole is composed of intermetallic compounds. Compositions that form compounds are preferred. This intermetallic compound is called an electronic compound, especially a 3/2 electron compound (average outer shell electron concentration θ/a
An alloy composition of around 3/2) is good.
また、本発明合金は固相変態、特に共析変態又は包析変
態を有する合金組成が好ましく、その合金は高温からの
急冷と非急冷によって分光反射率の差の大きいものが得
られる。Further, the alloy of the present invention preferably has an alloy composition having solid phase transformation, particularly eutectoid transformation or enveloping transformation, and the alloy can be obtained with a large difference in spectral reflectance by quenching from high temperature and non-quenching.
本発明合金は超微細結晶粒を有する合金が好ましく、特
に結晶粒径は0.1μm以下が好ましい。The alloy of the present invention preferably has ultrafine crystal grains, and particularly preferably has a crystal grain size of 0.1 μm or less.
即ち、結晶粒は可視光領域の波長の値より小さいのが好
ましいが、半導体レーザ光の波長の値より小さいもので
もよい。That is, the crystal grains are preferably smaller than the wavelength of visible light, but may be smaller than the wavelength of semiconductor laser light.
また、基板上に形成された膜の熱容量を低減させること
から、その膜を記録単位の最小程度の大きさにエツチン
グなどにより区切ることができる。In addition, since the heat capacity of the film formed on the substrate is reduced, the film can be divided into the minimum size of the recording unit by etching or the like.
(特性)
本発明の分光反射率可変合金及び記録材料は、可視光領
域における分光反射率を同一温度で少なくとも2種類形
成させることができる。即ち、高温からの急冷によって
形成された結晶構造(組織)を有するものの分光反射率
が非急冷によって形成された結晶構造(組織)を有する
ものの分光反射率と異なっていることが必要である。(Characteristics) The variable spectral reflectance alloy and recording material of the present invention can form at least two types of spectral reflectance in the visible light region at the same temperature. That is, it is necessary that the spectral reflectance of a material having a crystal structure (structure) formed by rapid cooling from a high temperature is different from that of a material having a crystal structure (structure) formed by non-quenching.
また、急冷と非急冷によって得られるものの分光反射率
の差は5%以上が好ましく、特に10%以上有すること
が好ましい1分光反射率の差が大きければ、目視による
色の識別が容易であり、後で記載する各種用途において
顕著な効果がある。In addition, the difference in spectral reflectance obtained by quenching and non-quenching is preferably 5% or more, particularly preferably 10% or more.1 If the difference in spectral reflectance is large, it is easy to visually identify the color, It has remarkable effects in various applications described later.
分光反射させる光源として、電磁波であれば可視光以外
でも使用可能であり、赤外線、紫外線なども使用可能で
ある。As a light source for spectrally reflecting, electromagnetic waves other than visible light can be used, and infrared rays, ultraviolet rays, etc. can also be used.
本発明合金のその他の特性として、電気抵抗率、光の屈
折率、光の偏光率、光の透過率なども分光反射率と同様
に可逆的に変えることができ、信号。Other properties of the alloy of the present invention include electrical resistivity, optical refractive index, optical polarization index, and optical transmittance, which can be changed reversibly in the same way as spectral reflectance, and can be used to change signals.
文字1図形、記号等の各種情報の記録、再生、消去1表
示、センサー等の再生、検出手段として利用することが
できる。It can be used as a means for recording, reproducing, erasing and displaying various information such as characters, figures and symbols, reproducing and detecting sensors, etc.
分光反射率は合金の表面あらさ状態に関係するので、前
述のように少なくとも可視光領域において10%以上有
するように少なくとも目的とする部分において鏡面にな
っているのが好ましい。Since the spectral reflectance is related to the surface roughness of the alloy, it is preferable that at least the intended portion has a mirror surface so as to have 10% or more in the visible light region as described above.
(用途)
本発明合金は、加熱急冷によって部分的又は全体に結晶
構造の変化による電磁波の分光反射率。(Applications) The alloy of the present invention has a spectral reflectance of electromagnetic waves due to a partial or total change in crystal structure due to heating and rapid cooling.
電気抵抗率、屈折率、偏光率、透過率等の物理的又は電
気的特性を変化させ、これらの特性の変化を利用して記
録、表示、センサー等の素子に使用することができる。Physical or electrical properties such as electrical resistivity, refractive index, polarization index, transmittance, etc. can be changed, and changes in these properties can be utilized to use for elements such as recording, display, and sensors.
情報等の記録の手段として、電圧及び電流の形での電気
エネルギー、電磁波(可視光、輻射熱。Electric energy in the form of voltage and current, electromagnetic waves (visible light, radiant heat) are used as a means of recording information, etc.
赤外線、紫外線、写真用閃光ランプの光、電子ビーム、
陽子線、アルゴンレーザ、半導体レーザ等のレーザ光線
、熱等)を用いることができ、特にその照射による分光
反射率の変化を利用して光ディスクの記録媒体に利用す
るのが好ましい、光ディスクには、ディジタルオーディ
オディスク(CAD又はコンパクトディスク)、ビデオ
ディスク、メモリーディスクなどがあり、これらに使用
可能である。本発明合金を光ディスクの記録媒体に使用
することにより再生専用型、追加記録型。Infrared rays, ultraviolet rays, photographic flash lamp light, electron beams,
Proton beams, laser beams such as argon lasers, semiconductor lasers, heat, etc.) can be used, and it is particularly preferable to utilize changes in spectral reflectance due to irradiation as a recording medium for optical disks. It can be used for digital audio discs (CAD or compact discs), video discs, memory discs, etc. By using the alloy of the present invention in the recording medium of an optical disk, a read-only type and an additional recording type can be produced.
書換型ディスク装置にそれぞれ使用でき、特に書換型デ
ィスク装置においてきわめて有効である。It can be used in any rewritable disk device, and is particularly effective in rewritable disk devices.
本発明合金を光ディスクの記録媒体に使用した場合の記
録及び再生の原理の例は次の通りである。An example of the principle of recording and reproduction when the alloy of the present invention is used in a recording medium of an optical disk is as follows.
先ず、記録媒体を局部的に加熱し該加熱後の急冷によっ
て高温度領域での結晶構造を低温度領域で保持させて所
定の情報を記録し、又は高温相をベースとして、局部的
に加熱して高温相中に局部的に低温相によって記録し、
記録部分に光を照射して加熱部分と非加熱部分の光学的
特性の差を検出して情報を再生することができる。更に
情報として記録された部分を記録時の加熱温度より低い
温度又は高い温度で加熱し記録された情報を消去するこ
とができる。光はレーザ光線が好ましく、特に短波長レ
ーザが好ましい6本発明の加熱部分と非加熱部分との反
射率が500nm又は800nm付近の波長において最
も大きいので、このような波長を有するレーザ光を再生
に用いるのが好ましい。記録、再生には同じレーザ源が
用いられ、消去に記録のものよりエネルギー密度を小さ
くした他のレーザ光を照射するのが好ましい。First, the recording medium is locally heated and then rapidly cooled to maintain the crystal structure in the high temperature region in the low temperature region to record predetermined information, or the high temperature phase is used as a base to locally heat the recording medium. recorded locally by a low temperature phase during the high temperature phase,
Information can be reproduced by irradiating the recorded portion with light and detecting the difference in optical characteristics between the heated portion and the non-heated portion. Furthermore, the recorded information can be erased by heating the portion recorded as information at a temperature lower or higher than the heating temperature at the time of recording. The light is preferably a laser beam, and a short wavelength laser is particularly preferable.6 Since the reflectance between the heated part and the non-heated part of the present invention is greatest at a wavelength around 500 nm or 800 nm, a laser beam having such a wavelength can be used for reproduction. It is preferable to use It is preferable that the same laser source be used for recording and reproducing, and for erasing, a different laser beam having a lower energy density than that for recording is irradiated.
また1本発明合金を記録媒体に用いたディスクは情報が
記録されているか否かが目視で判別できる大きなメリッ
トがある。Furthermore, a disk using the alloy of the present invention as a recording medium has a great advantage in that it can be visually determined whether information is recorded or not.
表示として、特に可視光での分光反射率を部分的に変え
ることができるので塗料を使用せずに文字、図形、記号
等を記録することができ、それらの表示は目視によって
識別することができる。また、これらの情報は消去する
ことができ、記録と消去のくり返し使用のほか、永久保
存も可能である。その応用例として時計の文字盤、アク
セサリ−などがある。As a display, it is possible to partially change the spectral reflectance of visible light, so it is possible to record characters, figures, symbols, etc. without using paint, and these displays can be visually identified. . Furthermore, this information can be erased, and in addition to being used repeatedly by recording and erasing, it is also possible to store it permanently. Examples of its applications include clock faces and accessories.
センサーとして、特に可視光での分光反射率の変化を利
用する温度センサーがある。予め高温相に変る温度が分
っている本発明の合金を使用したセンサーを測定しよう
とする温度領域に保持し。As a sensor, there is a temperature sensor that utilizes changes in spectral reflectance, especially in visible light. A sensor using the alloy of the present invention, whose temperature at which it changes to a high-temperature phase is known in advance, is held in the temperature range to be measured.
その適冷によって適冷相を保持させることによつておお
よその温度検出ができる。Approximate temperature detection can be performed by maintaining an appropriate cooling phase through appropriate cooling.
第1の温度からの冷却速度は102℃/秒以上。The cooling rate from the first temperature is 102°C/second or more.
より好ましくは103℃/秒以上が好ましい。More preferably, it is 103° C./second or higher.
〔実施例1〕
A u −G a合金を溶湯急冷法により箔状に成形し
てその色調変化、分光反射率などを調べた。[Example 1] A u - Ga alloy was formed into a foil shape by a molten metal quenching method, and its color tone change, spectral reflectance, etc. were investigated.
Auに10〜15wt%のGaを含む各種合金をアルゴ
ン雰囲気中高周波炉で溶解し、約41111径の棒状に
凝固させ、5〜Log程度の重さに切断して溶湯急冷用
母合金とした。同様に、Ga12wt%と、Ga、Ti
、Ta、Fs、Ag、Anを単独で2wt%を含む合金
を作成した。Various alloys containing Au and 10 to 15 wt% of Ga were melted in a high frequency furnace in an argon atmosphere, solidified into a rod shape with a diameter of about 41111, and cut into pieces with a weight of about 5 to Log to prepare a master alloy for rapidly cooling molten metal. Similarly, Ga12wt%, Ga, Ti
An alloy containing 2 wt % of each of Ta, Fs, Ag, and An was prepared.
溶湯急冷法には一般に知られる単ロール型装置を用いた
0石英製のノズルに母合金を装入し再溶解し高速で回転
するロール(300wnφ)外周上に注湯して厚さ約5
0μm、幅5Illlのリボン状箔を作製した。この箔
を電気炉により各温度2分加熱水冷して箔の色を観察し
た。箔の色は約30・0℃以上の熱処理したものとそれ
以下で処理したものでは明らかに異なった。これらは室
温で高温のものは黄金色であり、それ以下のものは白色
であった。この高温の色と低温色は可視光から近赤外光
領域での分光反射率において十分な差が認められた。ま
た、高温領域(300℃以上)から急冷して色を変えた
箔を300℃以下の比較的高い温度(150℃以上)で
熱処理すると色は低温の色に変わる。その後、高温から
の急冷と低温での加熱冷却を繰返すと室温での箔の色は
可逆的に変化した。なお、箔の一部をライターやバーナ
ーなどで局部加熱すると2つの色が共存させることがで
き1表示素子としても応用できることを確認した。The molten metal quenching method uses a generally known single roll type device.The master alloy is charged into a quartz nozzle, remelted, and poured onto the outer periphery of a roll (300wnφ) rotating at high speed to a thickness of about 5mm.
A ribbon-shaped foil with a width of 0 μm and a width of 5 Ill was produced. This foil was heated in an electric furnace for 2 minutes at each temperature and cooled with water, and the color of the foil was observed. The color of the foils was clearly different between those heat-treated at temperatures above 30.0°C and those heat-treated below. These were golden yellow at room temperature and hotter, and white at lower temperatures. A sufficient difference in spectral reflectance from visible light to near-infrared light was observed between the high-temperature color and the low-temperature color. Furthermore, if a foil that has changed color by rapid cooling from a high temperature range (300°C or higher) is heat treated at a relatively high temperature below 300°C (150°C or higher), the color changes to the low temperature color. Thereafter, by repeating rapid cooling from a high temperature and heating and cooling at a low temperature, the color of the foil at room temperature changed reversibly. It was also confirmed that by locally heating a portion of the foil with a lighter or burner, two colors can coexist, and that it can be used as a single display element.
〔実施例2〕
実施例1と同様な方法で溶解凝固させた合金と機械加工
により粉末状に成形した。この粉末について実施例1と
同様な熱処理をした結果、はぼ同じ可逆的色調変化が得
られ、粉末においても箔と同等の現象を示した。[Example 2] An alloy was melted and solidified in the same manner as in Example 1, and then molded into powder by machining. When this powder was subjected to the same heat treatment as in Example 1, almost the same reversible color change was obtained, and the powder also showed the same phenomenon as the foil.
〔実施例3〕
実施例1と同様な方法で溶解し、約120mφの円筒状
に凝固させたインゴットから厚さ5m、直径Loomの
円板を切り出し、スパッタ蒸着用のターゲットとした。[Example 3] A disk with a thickness of 5 m and a diameter of Loom was cut out from an ingot that was melted in the same manner as in Example 1 and solidified into a cylindrical shape of about 120 mφ, and used as a target for sputter deposition.
スパッタ蒸着法としてはDC−マグネトロン型を使用し
、基板には26国径、厚さ1.2ffiの硬質ガラス円
板を用いた。基板温度200℃、スパッタパワー150
W、ガス(Ar)分圧20mTorr、の条件でスパッ
タ蒸着し約1100n厚の薄膜を作製した。なお、膜面
には保護膜としてRF−スパッタによりA Q s O
2または、GaO。A DC-magnetron type sputter deposition method was used, and a hard glass disk having a diameter of 26 mm and a thickness of 1.2 ffi was used as the substrate. Substrate temperature 200℃, sputter power 150
A thin film with a thickness of about 1100 nm was fabricated by sputter deposition under conditions of W and gas (Ar) partial pressure of 20 mTorr. In addition, the film surface was coated with A Q s O as a protective film by RF sputtering.
2 or GaO.
を約50nm厚さ蒸着させた。was deposited to a thickness of about 50 nm.
この合金薄膜について実施例1と同様の熱処理を施した
。その結果、室温での薄膜の色は、加熱急冷条件により
実施例1と同様の可逆的変化を示し、それに伴ない可視
光から近赤外領域の分光反射率も変化した。従って、こ
のような薄膜においても可逆的な色調及び分光反射率変
化があることが分った。This alloy thin film was subjected to the same heat treatment as in Example 1. As a result, the color of the thin film at room temperature showed a reversible change similar to that in Example 1 depending on the heating and quenching conditions, and the spectral reflectance from visible light to near-infrared light also changed accordingly. Therefore, it was found that even in such a thin film, there is a reversible change in color tone and spectral reflectance.
〔実施例4〕
実施例3と同様な方法で作製したスパッタ蒸着合金膜に
ついてレーザ光による記録、再生、消去を実施した。レ
ーザ光としては半導体レーザ(波長830nm)もしく
はArレーザ(波長488nm)を用いた。低温熱処理
後の薄膜にレーザ光を膜面パワーで10〜50mW、ビ
ーム径を約2〜10μm程度まで変え、照射した。その
結果、照射部は高温(300’C以上)に加熱急冷した
際に相当する色に変化した。このようにしてレーザ光を
走査させ線を描き、そこを横切るように低パウーレーザ
を走査させ、反射率変化を直流電圧に変換して調べた結
果、線に対応した電圧変化が認められ、電気的特性が可
能であることを確認した。[Example 4] A sputter-deposited alloy film produced in the same manner as in Example 3 was recorded, reproduced, and erased using a laser beam. As the laser light, a semiconductor laser (wavelength: 830 nm) or an Ar laser (wavelength: 488 nm) was used. The thin film after the low-temperature heat treatment was irradiated with laser light at a film surface power of 10 to 50 mW and a beam diameter of about 2 to 10 μm. As a result, the irradiated area changed to a color corresponding to when it was heated and rapidly cooled to a high temperature (300'C or higher). As a result of scanning the laser beam to draw a line in this way, scanning the low-power laser across the line, and converting the change in reflectance into DC voltage, we found that there was a voltage change corresponding to the line. It was confirmed that the characteristics are possible.
このように描いた線は膜全体を150’C程度に加熱す
るか、パワー密度の低いレーザ光を照射すると消えた。The lines drawn in this way disappeared when the entire film was heated to about 150'C or irradiated with a laser beam of low power density.
以上のことからこの合金薄膜についてレーザ光による記
録、再生及び消去を確認した。From the above, it was confirmed that this alloy thin film could be recorded, reproduced, and erased by laser light.
また、レーザ光で記録した部分は非記録部分とレーザ光
の反射面の高さが異なり、両者で反射率が異なる。Furthermore, the height of the laser beam reflecting surface of the portion recorded with the laser beam is different from that of the non-recorded portion, and the reflectance is different between the two.
〔゛発明の効果〕
本発明によれば、結晶−結晶相関転移による色もしくは
反射率の可逆的変化を利用したAu−Ga合金系の新規
な記録材料が得られる。[Effects of the Invention] According to the present invention, a novel recording material based on an Au-Ga alloy that utilizes a reversible change in color or reflectance due to crystal-crystal correlation transition can be obtained.
第1図(a)はAu−Ga合金の二元状態図及び第1図
(b)は記録及び消去の原理を示す図である。FIG. 1(a) is a binary phase diagram of an Au-Ga alloy, and FIG. 1(b) is a diagram showing the principle of recording and erasing.
Claims (1)
することを特徴とする分光反射率可変合金。 2、固体状態で室温より高い第1の温度と該第1の温度
より低い第2の温度で異なつた結晶構造を有する合金表
面の一部が、前記第1の温度からの急冷によつて前記第
2の温度における結晶構造と異なつた結晶構造を有し、
他は前記第2の温度における結晶構造を有し前記急冷さ
れた結晶構造とは異なつた分光反射率を有する特許請求
の範囲第1項に記載の分光反射率可変合金。 3、前記合金は金属間化合物を有する特許請求の範囲第
1項又は第2項に記載の分光反射率可変合金。 4、前記第1の温度は固相変態点より高い温度である特
許請求の範囲第1項〜第3項のいずれかに記載の分光反
射率可変合金。 5、前記急冷によつて形成された結晶構造を有するもの
の分光反射率と非急冷によつて形成された前記低温にお
ける結晶構造を有するものの分光反射率との差が5%以
上である特許請求の範囲第1項〜第4項のいずれかに記
載の分光反射率可変合金。 6、前記合金の分光反射率は波長400〜1000nm
で10%以上である特許請求の範囲第1項〜第5項のい
ずれかに記載の分光反射率可変合金。 7、前記合金はノンバルク材である特許請求の範囲第1
項〜第6項のいずれかに記載の分光反射率可変合金。 8、前記合金は結晶粒径が0.1μm以下である特許請
求の範囲第1項〜第7項のいずれかに記載の分光反射率
可変合金。 9、前記合金は薄膜、箔、ストリップ、粉末及び細線の
いずれかである特許請求の範囲第1項〜第8項のいずれ
かに記載の分光反射率可変合金。 10、金を主成分とし、重量でガリウム10〜15%と
1A、2A、4A、5A、6A、7A、8、1B、2B
、3B、4B、5B族、希土類の1種または2種以上を
合計で15重量%以下を含む合金からなることを特徴と
する分光反射率可変合金。 11、金を主成分とし、ガリウム10〜15重量%を含
有することを特徴とする記録材料。 12、固体状態で室温より高い第1の温度と該第1の温
度より低い第2の温度とで異なつた結晶構造を有する合
金であつて、該合金表面の少なくとも一部が前記第1の
温度からの急冷によつて前記第2の温度における結晶構
造と異なつた結晶構造を形成する合金組成を有する特許
請求の範囲第11項に記載の記録材料。 13、前記合金の溶湯を回転する高熱伝導性部材からな
るロール円周面上に注湯してなる箔又は細線である特許
請求の範囲第11項又は第12項に記載の記録材料。 14、前記合金を蒸着又はスパッタリングによつて堆積
してなる薄膜である特許請求の範囲第11項又は第12
項に記載の記録材料。 15、前記合金の溶湯を液体又は気体の冷却媒体を用い
て噴霧してなる粉末である特許請求の範囲第11項又は
第12項に記載の記録材料。 16、金を主成分とし、重量でガリウム10〜15wt
%と1A、2A、4A、5A、6A、7A、8、1B、
2B、3B、4B、5B族、希土類の1種または2種以
上を合計で15重量%以下を含む合金からなることを特
徴とする記録材料。[Scope of Claims] 1. An alloy with variable spectral reflectance, characterized in that the main component is gold and 10 to 15% by weight of gallium. 2. A part of the alloy surface having a different crystal structure at a first temperature higher than room temperature and a second temperature lower than the first temperature in the solid state is formed by rapid cooling from the first temperature. having a crystal structure different from the crystal structure at the second temperature,
2. The variable spectral reflectance alloy according to claim 1, wherein the other alloy has a crystal structure at the second temperature and has a spectral reflectance different from that of the rapidly cooled crystal structure. 3. The variable spectral reflectance alloy according to claim 1 or 2, wherein the alloy contains an intermetallic compound. 4. The variable spectral reflectance alloy according to any one of claims 1 to 3, wherein the first temperature is higher than the solid phase transformation point. 5. A patent claim in which the difference between the spectral reflectance of a product having a crystal structure formed by the rapid cooling and the spectral reflectance of a product having a crystal structure at the low temperature formed by non-quenching is 5% or more. The variable spectral reflectance alloy according to any one of the ranges 1 to 4. 6. The spectral reflectance of the alloy is at a wavelength of 400 to 1000 nm.
10% or more of the variable spectral reflectance alloy according to any one of claims 1 to 5. 7. Claim 1, wherein the alloy is a non-bulk material.
The variable spectral reflectance alloy according to any one of items 6 to 6. 8. The variable spectral reflectance alloy according to any one of claims 1 to 7, wherein the alloy has a crystal grain size of 0.1 μm or less. 9. The variable spectral reflectance alloy according to any one of claims 1 to 8, wherein the alloy is any one of a thin film, foil, strip, powder, and thin wire. 10. Gold as the main component, gallium 10-15% by weight and 1A, 2A, 4A, 5A, 6A, 7A, 8, 1B, 2B
, 3B, 4B, 5B groups, and rare earth elements in a total of 15% by weight or less. 11. A recording material containing gold as a main component and 10 to 15% by weight of gallium. 12. An alloy having different crystal structures in a solid state at a first temperature higher than room temperature and a second temperature lower than the first temperature, wherein at least a part of the alloy surface is at the first temperature. 12. The recording material according to claim 11, having an alloy composition that forms a crystal structure different from the crystal structure at the second temperature when quenched from the recording material. 13. The recording material according to claim 11 or 12, which is a foil or thin wire formed by pouring the molten metal of the alloy onto the circumferential surface of a rotating roll made of a highly thermally conductive member. 14. Claim 11 or 12, which is a thin film formed by depositing the alloy by vapor deposition or sputtering.
Recording materials listed in Section. 15. The recording material according to claim 11 or 12, which is a powder obtained by spraying the molten metal of the alloy using a liquid or gas cooling medium. 16. Main component is gold, gallium is 10-15wt by weight
% and 1A, 2A, 4A, 5A, 6A, 7A, 8, 1B,
1. A recording material comprising an alloy containing a total of 15% by weight or less of one or more of Group 2B, 3B, 4B, 5B, and rare earth elements.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60030414A JPS61190029A (en) | 1985-02-20 | 1985-02-20 | Alloy having variable spectral reflectance and recording material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60030414A JPS61190029A (en) | 1985-02-20 | 1985-02-20 | Alloy having variable spectral reflectance and recording material |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61190029A true JPS61190029A (en) | 1986-08-23 |
Family
ID=12303286
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60030414A Pending JPS61190029A (en) | 1985-02-20 | 1985-02-20 | Alloy having variable spectral reflectance and recording material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61190029A (en) |
-
1985
- 1985-02-20 JP JP60030414A patent/JPS61190029A/en active Pending
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