JPS61189503A - Manufacture of diffraction grating - Google Patents

Manufacture of diffraction grating

Info

Publication number
JPS61189503A
JPS61189503A JP3096085A JP3096085A JPS61189503A JP S61189503 A JPS61189503 A JP S61189503A JP 3096085 A JP3096085 A JP 3096085A JP 3096085 A JP3096085 A JP 3096085A JP S61189503 A JPS61189503 A JP S61189503A
Authority
JP
Japan
Prior art keywords
diffraction grating
resist
film
substrate
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3096085A
Other languages
Japanese (ja)
Inventor
Toshiya Yokogawa
俊哉 横川
Keisuke Koga
啓介 古賀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3096085A priority Critical patent/JPS61189503A/en
Publication of JPS61189503A publication Critical patent/JPS61189503A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve the controllability of etching by forming a resist diffraction grating on a substrate surface by using a metallic mask which has the same period with the resist diffraction grating and then etching the substrate surface by using the resist diffraction grating as a mask. CONSTITUTION:A thin metallic film 7 which is thick enough not to transmit light is formed on a photoresist film 6 on the surface of the substrate 1 and a photoresist film 2 with film thickness corresponding to the period of the diffraction grating is formed by rotating coating. The resist film 2 is exposed by an interference exposing means which uses laser light beams 3 and 3' and developed to form the resist diffraction grating of the resist film 2 on the film 7. The resist 6 is etched through the metallic mask which is formed by etching the film 7 and has the same period with interference fringes, and exposure and development are carried out to form the diffraction grating of the resist on the surface of the substrate 1 with good reproducibility. Consequently, the controllability of the chemical etching is improved.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、基板面上に再現性良く、制御性良く回折格子
を形成する方法に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for forming a diffraction grating on a substrate surface with good reproducibility and controllability.

従来の技術 最近、回折格子は、光集積回路に有望なり F B。Conventional technology Recently, diffraction gratings have become promising for optical integrated circuits.

DBRレーザー等の光共振用ミラーあるいは波長多重通
信用の波長分波素子として注目を集めている。
It is attracting attention as an optical resonant mirror for DBR lasers, etc., or as a wavelength demultiplexing element for wavelength multiplexing communications.

回折格子を光集積回路に利用する場合、回折格子の間隔
は通常子〜数千人と微細になり、高精度の加工技術が要
求される。
When diffraction gratings are used in optical integrated circuits, the spacing between the diffraction gratings is usually small to several thousand, and highly accurate processing techniques are required.

第2図に従来から用いられている回折格子の作製プロセ
スを示す0図中、1は回折格子を形成すべき基板、2は
フォトレジスト膜、3はレーザー光である。まず基板1
にフォトレジスト膜2をスピンナーで回転塗布した後、
レーザー光3,3′を用いた干渉露光法によりフォトレ
ジスト膜を露光する(A)。次に現像を施すと、干渉縞
の周期に等しい周期でフォトレジストが除去されレジス
ト回折格子が形成される(B)。これをマスクとして化
学エツチング液で基板1を化学エツチングすると、前記
レジスト回折格子の周期と等しい周期で溝が形成される
(C)。その後レジスト2を除去して、回折格子4が作
製される(D)。
FIG. 2 shows a manufacturing process for a conventionally used diffraction grating, in which 1 is a substrate on which a diffraction grating is to be formed, 2 is a photoresist film, and 3 is a laser beam. First, board 1
After coating the photoresist film 2 with a spinner,
The photoresist film is exposed by an interference exposure method using laser beams 3 and 3' (A). Next, when development is performed, the photoresist is removed at a period equal to the period of the interference fringes, and a resist diffraction grating is formed (B). When the substrate 1 is chemically etched using a chemical etching solution using this as a mask, grooves are formed with a period equal to the period of the resist diffraction grating (C). Thereafter, the resist 2 is removed and the diffraction grating 4 is produced (D).

第3図に従来の他の回折格子の作製プロセスを示す。ま
ず前記第2図のプロセスと同様に基板1にフォトレジス
ト膜2をスピンナーで回転塗布した後、干渉露光法によ
りフォトレジスト膜2を露光しくA)、現像後レジスト
回折格子を形成する(B)。
FIG. 3 shows the manufacturing process of another conventional diffraction grating. First, a photoresist film 2 is spin-coated onto a substrate 1 using a spinner in the same manner as the process shown in FIG. .

ついでこのレジストマスクにプラズマ処理6を施すこと
により、次の化学エツチングに適した状態までエツチン
グし整形する(C)。その後これをマスクとして化学エ
ツチングしくD)、さらにフォトレジストを除去するこ
とにより回折格子4が作製される(ト))。
Next, this resist mask is subjected to plasma treatment 6 to etch and shape it to a state suitable for the next chemical etching (C). Thereafter, using this as a mask, chemical etching is performed (d), and the photoresist is further removed to produce the diffraction grating 4 (g)).

発明が解決しようとする問題点 第2図に示す製法による場合以下の様な欠点を有してい
る。
Problems to be Solved by the Invention The manufacturing method shown in FIG. 2 has the following drawbacks.

第1に、化学エツチングを施す場合は基本的にレジスト
マスクの溝2′の部分でフォトレジストが残存しないこ
とを必要とする。しかし干渉露光法においては、溝2′
の底部に近い程露光さらには現像がされにくり、化学エ
ツチングに有効なレジストマスクを作製することは困難
である。
First, when chemical etching is performed, it is basically necessary that no photoresist remains in the grooves 2' of the resist mask. However, in the interference exposure method, the groove 2'
The closer the resist is to the bottom, the more difficult it is to expose and develop, making it difficult to produce a resist mask that is effective for chemical etching.

第2に、フォトリンプロセスにおける露光、現像さらに
レジスト膜厚といった諸条件は、レジスト回折格子が形
成される過程に複雑に関与するため、それらの諸条件を
再現性良く、さらに高いアスペクト比が得られるよう最
適に制御することは困難である。
Second, various conditions such as exposure, development, and resist film thickness in the photorin process are intricately involved in the process of forming a resist diffraction grating. It is difficult to optimally control the

次に第3図に示す製法による場合、プラズマ処理を用い
るため基板に損傷が生じるため、この製法で得られた回
折格子を用いた素子において安定な特性を得ることが困
難である。
Next, in the case of the manufacturing method shown in FIG. 3, damage occurs to the substrate due to the use of plasma treatment, making it difficult to obtain stable characteristics in an element using the diffraction grating obtained by this manufacturing method.

問題点を解決するための手段 本発明は上記問題点を解決するため、まず基板面上にフ
ォトレジスト膜を回転塗布し、その膜上に金属薄膜を形
成し、さらに再度金属薄膜上にフォトレジスト膜を回転
塗布した後、金属薄膜上にレジスト回折格子を形成し、
次にこれをマスクとして金属薄膜をエツチングして前記
レジスト回折格子の周期と等しい周期を有する金属マス
クを作製し、しかる後この金属マスクを用いて基板面上
にレジスト回折格子を形成し、さらにこのレジスト回折
格子をマスクとしてエツチングを施すことにより基板に
回折格子を作製することを特徴とする回折格子の製造方
法を提供する。
Means for Solving the Problems In order to solve the above problems, the present invention first spin-coats a photoresist film on the substrate surface, forms a metal thin film on the film, and then coats the photoresist film again on the metal thin film. After spin-coating the film, a resist diffraction grating is formed on the metal thin film,
Next, using this as a mask, the metal thin film is etched to produce a metal mask having a period equal to the period of the resist diffraction grating, and then a resist diffraction grating is formed on the substrate surface using this metal mask. Provided is a method for manufacturing a diffraction grating, characterized in that the diffraction grating is manufactured on a substrate by etching using a resist diffraction grating as a mask.

作用 この技術的手段による作用は次のようになる。action The effect of this technical means is as follows.

第1に、化学エツチングのためのマスクとして基板面上
に形成すべきレジスト回折格子は、所望のパターンを有
する金属マスクを通して得られるため、干渉露光法特有
なフォトレジストの残存がレジスト回折格子の溝の底部
に生じることなく、さらに干渉露光法には必要な複雑な
条件設定を要しない。
First, the resist grating to be formed on the substrate surface as a mask for chemical etching is obtained through a metal mask having a desired pattern, so that the remaining photoresist, which is unique to interference exposure, is removed from the grooves of the resist grating. In addition, there is no need for complicated condition settings required for interference exposure method.

第2に、プラズマ処理によりエツチングする際、基板と
金属薄膜との間のフォトレジスト膜がバッファ一層とし
て作用するため、基板に損傷が生じない。
Second, during etching by plasma processing, the photoresist film between the substrate and the metal thin film acts as a buffer layer, so the substrate is not damaged.

実施例 以下、本発明を実施例により詳細に説明する。Example Hereinafter, the present invention will be explained in detail with reference to Examples.

第1図に、基板にInPを用いた場合の実施例を示す。FIG. 1 shows an example in which InP is used for the substrate.

図中、1はInP基板、2はフォトレジスト膜、3はレ
ーザー光である。まずInP基板1面上にフォトレジス
ト膜6をスピンナーにより回転塗布し、そのフォトレジ
スト膜6上に光が透過しない程度の膜厚を有するアルミ
ニウム等の金属薄膜アを真空蒸着により形成する。さら
にその金属薄膜T上に回折格子の周期に応じ念適当な膜
厚を有するフォトレジスト膜2を回転塗布する。適当な
プリベークを行なった後、レーザー光3.ゴを用いた干
渉露光法によりフォトレジスト膜2を露光する(ム)。
In the figure, 1 is an InP substrate, 2 is a photoresist film, and 3 is a laser beam. First, a photoresist film 6 is spin-coated on the surface of an InP substrate 1 using a spinner, and a thin metal film such as aluminum having a thickness that does not allow light to pass is formed on the photoresist film 6 by vacuum evaporation. Furthermore, a photoresist film 2 having an appropriate thickness according to the period of the diffraction grating is spin-coated on the metal thin film T. After proper pre-baking, laser light 3. The photoresist film 2 is exposed by an interference exposure method using a photoresist (m).

そして現像することにより金属薄膜T上にレジスト膜2
よりなるレジスト回折格子を形成するQ3)。適当なポ
ストベークを行なまた後、c ce4等のガスを用いて
プラズマ処理6を施し、または化学処理を施し、金属薄
膜2をエツチングするこ。
Then, by developing the resist film 2 on the metal thin film T.
Q3) to form a resist diffraction grating consisting of: After performing appropriate post-baking, the metal thin film 2 is etched by plasma treatment 6 using a gas such as CCE4 or by chemical treatment.

とにより、干渉縞の周期と等しい周期を有するパターン
の金属マスクを形成する(C)。次に、この金属マスク
を通してフォトレジスト6を化学溶剤でエツチングを施
す、または回折の影響がない適当な波長を有する紫外光
3″ を露光しその後現像を行なうことにより、基板1
面上に再現性良くレジストロよりなる回折格子を作製す
るΦ)。さらにこのレジスト回折格子をマスクとして飽
和臭素水。
As a result, a metal mask having a pattern having a period equal to that of the interference fringes is formed (C). Next, the photoresist 6 is etched with a chemical solvent through this metal mask, or the substrate 1 is exposed to ultraviolet light 3'' having an appropriate wavelength without the influence of diffraction, and then developed.
(Φ) to fabricate a diffraction grating made of resistors on a surface with good reproducibility. Furthermore, saturated bromine water is applied using this resist grating as a mask.

リン酸、水(2:1 :16)の混合液で基板1をエツ
チングする(K)。レジストマスクを除去するとInP
回折格子4が得られる(F)。尚、本実施例では基板1
にInPを用いているが、基板材料は本限りとせず、G
2LA!! 、 Si等を用いることも可能である。
The substrate 1 is etched with a mixed solution of phosphoric acid and water (2:1:16) (K). When the resist mask is removed, InP
A diffraction grating 4 is obtained (F). Note that in this embodiment, the substrate 1
Although InP is used for the substrate material, G
2LA! ! , Si, etc. can also be used.

発明の効果 以上のように、本発明により、化学エツチングに有効な
レジストマスクを、再現性良く、高いアスペクト比で形
成することが出来、その結果化学エツチングの制御性が
向上し、均一で再現性に富む回折格子の作製が可能とな
る。
Effects of the Invention As described above, according to the present invention, a resist mask that is effective for chemical etching can be formed with good reproducibility and a high aspect ratio.As a result, the controllability of chemical etching is improved, and the resist mask is uniform and reproducible. It becomes possible to fabricate a diffraction grating rich in .

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例における回折格子の作製方法
を説明するための断面図、第2図及び第3図は従来の回
折格子の作製方法を説明するための断面図である。 1・・・・・・基板、2,6・・・・・・フォトレジス
ト、3・・・・・・レーザー光、4・・・・・・回折格
子、6・・・・・・プラズマ処理、7・・・・・・金属
膜。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名3、
J’−・・レーザー光 12図        !、5、基板 2・・・フォトレジスト 3.3”、、、レープ゛−しし 第3図 1・・・羞 敵 2・・・フ^トしジ゛ヌト 3・レゾ゛−光 503、ガラズ°マヌシ浬
FIG. 1 is a cross-sectional view for explaining a method of manufacturing a diffraction grating according to an embodiment of the present invention, and FIGS. 2 and 3 are cross-sectional views for explaining a conventional method of manufacturing a diffraction grating. 1...Substrate, 2,6...Photoresist, 3...Laser light, 4...Diffraction grating, 6...Plasma treatment , 7...metal film. Name of agent: Patent attorney Toshio Nakao and 1 other person3,
J'-... Laser light 12 diagram! , 5. Substrate 2...Photoresist 3.3'',...Reply. Galaz ° Manushi 浬

Claims (1)

【特許請求の範囲】[Claims] 予め第1のフォトレジストを塗布した基板面上に金属薄
膜を形成し、さらに第2のフォトレジストを塗布した後
、所望の周期を有する第2のレジスト回折格子を金属薄
膜上に形成し、次に前記第2のレジスト回折格子をマス
クとして前記金属薄膜にエッチングを施して前記周期を
有する金属マスクを形成し、その後、前記金属マスクに
て前記第1のレジスト回折格子を形成し、さらに前記第
1のレジスト回折格子をマスクとして前記基板にエッチ
ングを施して前記基板面上に回折格子を形成することを
特徴とする回折格子の製造方法。
A metal thin film is formed on the substrate surface coated with a first photoresist in advance, and a second photoresist is further coated, and then a second resist diffraction grating having a desired period is formed on the metal thin film. etching the metal thin film using the second resist diffraction grating as a mask to form a metal mask having the period; then, forming the first resist diffraction grating with the metal mask; 1. A method of manufacturing a diffraction grating, comprising etching the substrate using a resist diffraction grating of No. 1 as a mask to form a diffraction grating on the surface of the substrate.
JP3096085A 1985-02-19 1985-02-19 Manufacture of diffraction grating Pending JPS61189503A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3096085A JPS61189503A (en) 1985-02-19 1985-02-19 Manufacture of diffraction grating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3096085A JPS61189503A (en) 1985-02-19 1985-02-19 Manufacture of diffraction grating

Publications (1)

Publication Number Publication Date
JPS61189503A true JPS61189503A (en) 1986-08-23

Family

ID=12318241

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3096085A Pending JPS61189503A (en) 1985-02-19 1985-02-19 Manufacture of diffraction grating

Country Status (1)

Country Link
JP (1) JPS61189503A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5254503A (en) * 1992-06-02 1993-10-19 International Business Machines Corporation Process of making and using micro mask

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5254503A (en) * 1992-06-02 1993-10-19 International Business Machines Corporation Process of making and using micro mask

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