JPS61188367U - - Google Patents

Info

Publication number

JPS61188367U

JPS61188367U JP7230485U JP7230485U JPS61188367U JP S61188367 U JPS61188367 U JP S61188367U JP 7230485 U JP7230485 U JP 7230485U JP 7230485 U JP7230485 U JP 7230485U JP S61188367 U JPS61188367 U JP S61188367U

Authority

JP

Japan

Prior art keywords

electrode

semiconductor

region

conductivity type

mos transistor

Prior art date

1985-05-17

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
• Global Dossier
• Discuss

• 239000004065 semiconductor Substances 0.000 claims description 13
• 239000000758 substrate Substances 0.000 claims description 2
• 239000010408 film Substances 0.000 claims 2
• 239000010409 thin film Substances 0.000 claims 1
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
• 238000010586 diagram Methods 0.000 description 1
• 229910052710 silicon Inorganic materials 0.000 description 1
• 239000010703 silicon Substances 0.000 description 1