JPS61184854A - Resin sealing type semiconductor device - Google Patents

Resin sealing type semiconductor device

Info

Publication number
JPS61184854A
JPS61184854A JP2434785A JP2434785A JPS61184854A JP S61184854 A JPS61184854 A JP S61184854A JP 2434785 A JP2434785 A JP 2434785A JP 2434785 A JP2434785 A JP 2434785A JP S61184854 A JPS61184854 A JP S61184854A
Authority
JP
Japan
Prior art keywords
parts
chip mounting
resin
semiconductor device
mounting portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2434785A
Other languages
Japanese (ja)
Inventor
Ichiro Fukuzawa
福沢 一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP2434785A priority Critical patent/JPS61184854A/en
Publication of JPS61184854A publication Critical patent/JPS61184854A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49503Lead-frames or other flat leads characterised by the die pad
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To limit the yield of cracks extremely, by providing stress avoiding cut parts at the central parts of the sides of a semiconductor-chip mounting part so that the pressure of water vapor due to high temperature, which is applied to a printed wiring board and the like at the time of mounting, is not concentrated on a specified part but dispersed. CONSTITUTION:Cut parts 14 are provided at the parts of the outer edge parts (peripheral parts) of a chip mounting part 13a in a lead frame 13. The actual size of the chip mounting part 13a is 6mm in longitudinal direction and 7mm in lateral direction, and a rectangle is formed. The cut parts 14 have a rectangular form, which has sizes of 1.5mm in longitudinal direction and 2mm in lateral direction. The cut parts 14 are provided at the approximately central parts of the four sides. As a result, the selected parts of the chip mounting part, i.e., the parts where stress is concentrated, are removed by the cut parts. Therefore, the stress is dispersed. Even if moisture is absorbed by a molding resin, the yield of cracks is limited when the amount of moisture absorption is less than the specified amount.

Description

【発明の詳細な説明】 (産業上の利用分野) この発明は樹脂封止形半導体装置に関し、詳しくは、り
がンリードフレームの素子搭載部に半導体チップが載置
され、周囲を成形樹脂によって封止した半導体装置に関
するものである。
[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to a resin-encapsulated semiconductor device, and more specifically, a semiconductor chip is mounted on the element mounting portion of a resin lead frame, and the surrounding area is surrounded by a molded resin. The present invention relates to a sealed semiconductor device.

(従来の技術) 電子機器の高密度実装に伴いプリント配線基板へ搭載さ
れる半導体装置のパッケージ形状は、小形で薄形なフラ
ット・プラスチック・ノクツケージ、スモール・アウト
ライン・ツク、ケージ或はフラ。
(Prior Art) As electronic devices are mounted at high density, the package shapes of semiconductor devices mounted on printed wiring boards are small and thin flat plastic cages, small outline packages, cages, or flats.

ト・ディラグ・パッケージなどと呼称される。いわゆる
面実装に適したものが少なくない。又プリント配線基板
への半田付による面実装も、個々に実装する方式から複
数個同時に実装する方式へと変遷しつつあるが、赤外線
加熱などによる同時加熱方式に伴う新たな問題がクロー
ズアップして来た。即ち多機能化に伴い半導体チップの
サイズが大形化する割にはパッケージ厚さはさほど厚く
ならないことから、パッケージにクラックが入ることで
ある。このクラックの発生する原因やクラックが多く発
生する個所、そしてその対策としての先行技術は、例え
ば昭和59年度電子通信学会通信部門全国大会予稿集第
1−50頁及び昭和59年5月の第14回日科技連信頼
性・保全性シンポジウム報第303〜第306頁に記載
されている。
It is also called a to dilag package. Many of them are suitable for so-called surface mounting. Furthermore, surface mounting by soldering on printed wiring boards is also transitioning from a method of mounting them individually to a method of mounting multiple pieces at the same time, but new problems associated with simultaneous heating methods such as infrared heating are coming into focus. It's here. That is, as the size of semiconductor chips increases with the increase in functionality, the thickness of the package does not increase so much, which causes cracks to appear in the package. The causes of this cracking, the locations where many cracks occur, and the prior art as countermeasures are available, for example, in the Proceedings of the National Conference of the Institute of Electronics and Communication Engineers in 1983, pages 1-50, and in May 1988, 14th It is described on pages 303 to 306 of the Japan Society of Science and Technology Reliability and Maintainability Symposium Report.

即ち前者は、クラックの原因が、保管中だ半導体A?ッ
ケージに吸着した湿気・(水分)が赤外線加熱などのり
フロ一時の比較的高い温度による急激な水蒸気圧の増加
によるものとし、その対策として実装置前に完成された
半導体デバイスをクラックを生じない温度で乾燥し、脱
水することが述べられている。
In other words, in the former case, is the crack caused by semiconductor A being stored? It is assumed that the moisture adsorbed on the package is due to a sudden increase in water vapor pressure caused by infrared heating and other relatively high temperatures during the bonding process, and as a countermeasure, the semiconductor devices that have been completed before being put into production are heated to a temperature that does not cause cracks. It is stated that the product is dried and dehydrated.

一方後者も、クラックの原因は、・ぐッケーゾ全体から
発生するガスを分析すると95係以上が水分であるから
、パッケージクラックが発生する直前のタブ(素子搭載
部)とレジン界面の隙間に発生する高圧の水蒸気てよる
ものとし、その対策として、赤外線熱源に面したパッケ
ージ表面に白色系金属の反射板を設け、完成デバイスの
ノやツケージ温度を高めないようにすることが述べられ
ている。
On the other hand, in the case of the latter, the cause of cracks is: - When analyzing the gas generated from the entire GUCKESO, moisture accounts for more than 95%, so it occurs in the gap between the tab (element mounting part) and the resin interface just before the package crack occurs. High-pressure water vapor is used, and as a countermeasure, it is stated that a white metal reflector plate should be provided on the package surface facing the infrared heat source to prevent the temperature of the finished device from increasing.

(発明が解決しようとする問題点) しかしながら前者の文献に記述された対策は、実装する
直前に乾燥し脱水する時間的な制約があシ又、実装置前
に乾燥・脱水を行わない場合は、乾燥・脱水作業後、装
置を再吸湿防止容器に格納する必要がある。加えてこの
乾燥温度が低温であるため処理時間が長時間となる。一
方後者の文献に記述された対策は、加熱実装方式が、赤
外線加熱方式に限定され、ペーノクーフエイズ方式及び
熱風方式には適合しない。即ちこれらの方式は、実装体
、例えばプリント配線板と半導体装置間のすき間から・
ぞッケーノ裏面へ廻り込んだ熱により、パッケージが高
温に曝される為である。
(Problem to be solved by the invention) However, the measures described in the former document have time constraints for drying and dehydrating immediately before mounting, and if drying and dehydrating are not performed before actual equipment. After drying and dehydration, the equipment must be stored in a re-absorption prevention container. In addition, since the drying temperature is low, the processing time becomes long. On the other hand, in the countermeasure described in the latter document, the heating mounting method is limited to the infrared heating method, and is not compatible with the penocoufys method and the hot air method. In other words, these methods eliminate
This is because the package is exposed to high temperatures due to the heat that circulates to the back of the package.

さて、この様にノや、ケージが吸湿した水分の膨張によ
るクラックの発生個所は、既に挙例した二つの先行技術
文献にも示されている通りチップ搭載部の周縁部に現わ
れる。正確には第3図及び第4図にてクラックの発生個
所を説明する。第3図は従来の樹脂封止形半導体装置の
外部導出リードを省略した裏面図であシ、第4図は第3
図のX−X線断面図であるが、この第4図に於ては外部
導出リードを一部についてのみ描いであるので注意され
たい。エポキシ樹脂などの絶縁性樹脂lの内部に生じた
クラック2はノfッケージ裏面に迄及んでいることがこ
れらの図で理解できよう。特に第4図では、ぐッケージ
表面に及んでいるクラックを実線で示しである。又この
クラック2は水蒸気圧力によって生じたパッケージ裏面
側に位置している樹脂1aとリードフレーム3のチップ
搭載部3aとの間に生じたフクレ4によシ発生し、矩形
を成すチップ搭載部3aの短辺t1では現れないが長辺
t2の中央部で多く見受けられる。更に良くこのクラッ
ク2を観察するとその発端はチップ搭載部3aの側面下
端部Aである。クラック2が辺の中央、特に長辺t2の
中央部で多く発生することについては次の説明で理解で
きよう。即ち短辺Z1+長辺t2 、厚さtをもつチッ
プ搭載部は、成形樹脂により、その周辺が固定されてい
る。この時チップ搭載部平坦面に等分布荷重、つまり水
蒸気圧を受けた場合(例えば240’Cの温度では33
気圧程度)曲げモーメントは辺中央部に集中し、長辺t
2の中央部で最大となるからである。
Now, as shown in the two prior art documents mentioned above, cracks occur at the periphery of the chip mounting portion due to the expansion of moisture absorbed by the cage. More precisely, the locations where cracks occur will be explained with reference to FIGS. 3 and 4. Figure 3 is a back view of a conventional resin-sealed semiconductor device with external leads omitted;
Although this is a sectional view taken along the line X--X in the figure, it should be noted that only a portion of the external leads are depicted in this figure. It can be understood from these figures that the crack 2 that has occurred inside the insulating resin 1 such as epoxy resin extends to the back surface of the nozzle cage. In particular, in FIG. 4, cracks extending to the surface of the package are shown by solid lines. Moreover, this crack 2 is caused by a blister 4 that occurs between the resin 1a located on the back side of the package and the chip mounting portion 3a of the lead frame 3 due to water vapor pressure, and the chip mounting portion 3a forming a rectangular shape. Although it does not appear on the short side t1, it is often seen in the center of the long side t2. When this crack 2 is observed more closely, its origin is found at the lower end A of the side surface of the chip mounting portion 3a. It will be understood from the following explanation that the cracks 2 often occur at the center of the sides, particularly at the center of the long side t2. That is, the chip mounting portion having short side Z1+long side t2 and thickness t is fixed at its periphery by molded resin. At this time, if the flat surface of the chip mounting part receives a uniformly distributed load, that is, water vapor pressure (for example, at a temperature of 240'C, 33
atmospheric pressure) The bending moment is concentrated at the center of the side, and the bending moment is concentrated at the center of the side,
This is because it is maximum at the center of 2.

又チップ搭載部3aの裏面側に向ってクラック2が生じ
ているのは、パッケージの厚さが半導体チッf5の搭載
側より薄い為と考えられる。
Moreover, the reason why the crack 2 appears toward the back side of the chip mounting portion 3a is considered to be because the thickness of the package is thinner than that on the mounting side of the semiconductor chip f5.

(問題点を解決するための手段) この発明は、樹脂封止形半導体装置に於て、半導体チッ
プ搭載部の厚さ方向と直交する面のほぼ中央部に切欠き
部を設けたものである。
(Means for Solving the Problems) The present invention provides a resin-sealed semiconductor device in which a notch is provided approximately at the center of a surface perpendicular to the thickness direction of a semiconductor chip mounting portion. .

(作用) この発明の特徴的な作用は、チップ搭載部の選択された
部分、即ち応力が集中する部分が切欠きにより除かれた
結果、応力の分散が生じ、成形樹脂が吸湿されていても
、所定量以下の吸湿量であれば、クラ、りの発生を制限
するように働くものである。
(Function) A characteristic effect of the present invention is that the selected portion of the chip mounting portion, that is, the portion where stress is concentrated, is removed by the notch, and as a result, stress is dispersed, even if the molded resin has absorbed moisture. If the amount of moisture absorption is less than a predetermined amount, it will work to limit the occurrence of cracks and cracks.

(実施例) この発明の好ましい実施例を第1図乃至第2図に従って
説明する。第1図はこの発明の第1の実施例を示す樹脂
封止形半導体装置の透視斜視図であり一部を切開して示
しである。さて、実施例装置10はエポキシ樹脂に代表
される成形用の絶縁性樹脂11で包囲された半導体チッ
プ12を含みこの半導体チップ12はリードフレーム1
3のチップ搭載部13aに載置され且つ、パッケージを
成す前記絶縁性樹脂11より導出された複数の外部導出
リード13bの選ばれたものと、前記樹脂11内で図示
しない細線、例えば金線で接続されている。ここまでの
構成は従来の樹脂封止形半導体装置と変るところがない
。しかしこの発明装置10は、前記リードフレーム13
のチップ搭載部13aの選択された部分に切欠きを有し
ていることに注意されたい。即ちリードフレーム13は
チップ搭載部13aの外縁部(周縁部)の一部に切欠き
14を有している。この切欠き14の位置及び切欠形状
は第1図では理解しにくいと思われるので第2図に拡大
して示す。即ち第2図はこの発明の要部拡大平面図であ
り、リードフレーム13の半導体チップ搭載部13a1
アイランドサポートと呼ばれる支持片13cの一部及び
切欠き14のみを示しである。この実施例のチップ搭載
部13mの実寸は縦6■、横7+maO長方形で、各辺
はぼ中央が縦1.5 mm横2+++mの長方形に切欠
した切欠き14を4辺全てに有している。この例に於け
るチップ搭載部13aの面積減少率は約30%であるが
、下表に同一寸法、即ち縦6■、横7箇の長方形を成す
チップ搭載部13mをペースに、面積減少率及び切欠き
形状をAラメータとして各10個のサンプルについての
耐クラ、り性の実験結果を示す。面金てのサンプルは同
一エポキシ樹脂で被覆した後、85℃、85 % R−
Hの高温高湿雰囲気下で72時間放置し、・母、ケージ
を充分吸湿させた後、260℃の半田バスに40秒間浸
漬した後の観察結果である。
(Embodiment) A preferred embodiment of the present invention will be described with reference to FIGS. 1 and 2. FIG. 1 is a perspective view of a resin-sealed semiconductor device showing a first embodiment of the present invention, with a portion cut away. Now, the embodiment device 10 includes a semiconductor chip 12 surrounded by an insulating resin 11 for molding such as epoxy resin, and this semiconductor chip 12 is connected to a lead frame 1.
A selected one of the plurality of external lead leads 13b placed on the chip mounting portion 13a of No. 3 and led out from the insulating resin 11 forming the package, and a thin wire (not shown in the drawings, for example, a gold wire) in the resin 11. It is connected. The configuration up to this point is no different from a conventional resin-sealed semiconductor device. However, in this invention device 10, the lead frame 13
Note that the chip mounting portion 13a has a notch in a selected portion. That is, the lead frame 13 has a notch 14 in a part of the outer edge (periphery) of the chip mounting portion 13a. Since the position and shape of this notch 14 may be difficult to understand in FIG. 1, it is shown enlarged in FIG. 2. That is, FIG. 2 is an enlarged plan view of the main part of the present invention, showing the semiconductor chip mounting portion 13a1 of the lead frame 13.
Only a part of a support piece 13c called an island support and a notch 14 are shown. The actual size of the chip mounting portion 13m in this embodiment is a rectangle with a height of 6 mm and a width of 7 + maO, and each side has a notch 14 on all four sides, which is a rectangular notch with a length of 1.5 mm and a width of 2 + + + m at the center. . In this example, the area reduction rate of the chip mounting part 13a is approximately 30%, but the table below shows the area reduction rate based on the chip mounting part 13m, which has the same dimensions, that is, a rectangle with 6 squares by 7 squares. The experimental results of the cracking and scratching resistance of 10 samples each are shown below, with the notch shape set as the A parameter. The surface metal sample was coated with the same epoxy resin and then heated at 85℃ and 85% R-
These are the observation results after being left in a high temperature and high humidity atmosphere of H for 72 hours to allow the mother and cage to sufficiently absorb moisture, and then immersed in a 260° C. solder bath for 40 seconds.

実験結果を見る限り、面積の減少率が高い方が明らかに
良好な結果を示す。又切欠きの形状は長方形でも半円形
でも優位差はない様に思われる。
As far as the experimental results are concerned, it is clear that the higher the area reduction rate, the better the results. Furthermore, there seems to be no difference in the shape of the notch whether it is rectangular or semicircular.

サンプル数は各10個と少量ではあるがその効果が大き
いことを示した。これらの結果から面積減少率は5%以
上であればかなり効果があシ好ましくは20係以上が良
さそうである。又切欠部の形状は、さほど神経質になら
なくても良さそうである。
Although the number of samples was small (10 each), it was shown that the effect was large. From these results, it appears that an area reduction rate of 5% or more is quite effective, and preferably a factor of 20 or more. Also, it seems like you don't have to be too careful about the shape of the notch.

(発明の効果) 以上述べた通りこの発明の樹脂封止形半導体装置は半導
体チップ搭載部の辺中央に応力回避用切欠きを設けた事
により、プリント配線板などへの実装時に加えられる高
温による水分の蒸気圧力が、特定部分に集中せずに分散
するためクラックの発生が極端に制限し得る。
(Effects of the Invention) As described above, the resin-sealed semiconductor device of the present invention has a notch for stress avoidance at the center of the side of the semiconductor chip mounting area, so that it can withstand high temperatures applied during mounting on a printed wiring board, etc. Since the moisture vapor pressure is dispersed rather than concentrated in a specific area, the occurrence of cracks can be extremely limited.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発−〇実施例で樹脂封止形半導体装置の透
視斜視図であり一部を切開して示しである。第2図は第
1図の要部拡大平面図である。第3図は従来の樹脂封止
形半導体装置の裏面図、第4図は第3図X−X線切断面
図を示すものである。 10・・・樹脂封止形半導体装置、1ノ・・・絶縁性樹
脂、12・・・半導体チップ、13・・・リードフレー
ム、13a・・・チップ搭載部、13b・・・外部導出
リード、13a・・・支持片、14・・・切欠き。
FIG. 1 is a perspective view of a resin-sealed semiconductor device according to this embodiment, with a portion cut away. FIG. 2 is an enlarged plan view of the main part of FIG. 1. FIG. 3 is a back view of a conventional resin-sealed semiconductor device, and FIG. 4 is a cross-sectional view taken along the line X--X in FIG. DESCRIPTION OF SYMBOLS 10... Resin-sealed semiconductor device, 1... Insulating resin, 12... Semiconductor chip, 13... Lead frame, 13a... Chip mounting part, 13b... External lead-out lead, 13a... Support piece, 14... Notch.

Claims (2)

【特許請求の範囲】[Claims] (1)チップ搭載部を有するリードフレームと、この搭
載部に載置された半導体チップと、このチップの電極と
前記リードフレームの外部導出リードとを接続する導電
細線と、前記半導体チップ及び前記導電細線を包囲しパ
ッケージを構成する絶縁性樹脂とを含む樹脂封止形半導
体装置に於て、前記チップ搭載部は、この搭載部の厚さ
方向と直交する選ばれた面のほぼ中央部に切欠きを有す
る事を特徴とする樹脂封止形半導体装置。
(1) A lead frame having a chip mounting portion, a semiconductor chip placed on the mounting portion, a conductive thin wire connecting an electrode of the chip and an external lead of the lead frame, the semiconductor chip and the conductive wire. In a resin-sealed semiconductor device including an insulating resin that surrounds thin wires and constitutes a package, the chip mounting portion is cut approximately at the center of a selected surface perpendicular to the thickness direction of the mounting portion. A resin-sealed semiconductor device characterized by having a chip.
(2)前記切欠きは、前記チップ搭載部の厚さ方向と直
交する面の全てに設けられた事を特徴とする特許請求の
範囲第1項記載の樹脂封止形半導体装置。
(2) The resin-sealed semiconductor device according to claim 1, wherein the notch is provided on all surfaces perpendicular to the thickness direction of the chip mounting portion.
JP2434785A 1985-02-13 1985-02-13 Resin sealing type semiconductor device Pending JPS61184854A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2434785A JPS61184854A (en) 1985-02-13 1985-02-13 Resin sealing type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2434785A JPS61184854A (en) 1985-02-13 1985-02-13 Resin sealing type semiconductor device

Publications (1)

Publication Number Publication Date
JPS61184854A true JPS61184854A (en) 1986-08-18

Family

ID=12135658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2434785A Pending JPS61184854A (en) 1985-02-13 1985-02-13 Resin sealing type semiconductor device

Country Status (1)

Country Link
JP (1) JPS61184854A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0293970A2 (en) * 1987-06-03 1988-12-07 SGS-THOMSON MICROELECTRONICS S.p.A. Pad for supporting a chip of an integrated-circuit electronic component
JPH0274065A (en) * 1988-09-09 1990-03-14 Matsushita Electron Corp Lead frame
JPH04258156A (en) * 1991-02-13 1992-09-14 Sharp Corp Semiconductor device
JPH05211271A (en) * 1992-01-30 1993-08-20 Nec Corp Semiconductor device
US5264730A (en) * 1990-01-06 1993-11-23 Fujitsu Limited Resin mold package structure of integrated circuit
US5661338A (en) * 1994-12-14 1997-08-26 Anam Industrial Co., Ltd. Chip mounting plate construction of lead frame for semiconductor package
US6223893B1 (en) 1986-11-25 2001-05-01 Hitachi, Ltd. Surface package type semiconductor package and method of producing semiconductor memory

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6223893B1 (en) 1986-11-25 2001-05-01 Hitachi, Ltd. Surface package type semiconductor package and method of producing semiconductor memory
US6443298B2 (en) 1986-11-25 2002-09-03 Hitachi, Ltd. Surface package type semiconductor package and method of producing semiconductor memory
US6981585B2 (en) 1986-11-25 2006-01-03 Renesas Technology Corp. Surface package type semiconductor package and method of producing semiconductor memory
EP0293970A2 (en) * 1987-06-03 1988-12-07 SGS-THOMSON MICROELECTRONICS S.p.A. Pad for supporting a chip of an integrated-circuit electronic component
EP0293970A3 (en) * 1987-06-03 1989-04-26 SGS-THOMSON MICROELECTRONICS S.p.A. Pad for supporting a chip of an integrated-circuit electronic component
JPH0274065A (en) * 1988-09-09 1990-03-14 Matsushita Electron Corp Lead frame
US5264730A (en) * 1990-01-06 1993-11-23 Fujitsu Limited Resin mold package structure of integrated circuit
JPH04258156A (en) * 1991-02-13 1992-09-14 Sharp Corp Semiconductor device
US5182630A (en) * 1991-02-13 1993-01-26 Sharp Kabushiki Kaisha Semiconductor device having a particular shaped die pad and coated lower surface
JPH05211271A (en) * 1992-01-30 1993-08-20 Nec Corp Semiconductor device
US5661338A (en) * 1994-12-14 1997-08-26 Anam Industrial Co., Ltd. Chip mounting plate construction of lead frame for semiconductor package

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