JPS61179548A - Wire bonding device - Google Patents
Wire bonding deviceInfo
- Publication number
- JPS61179548A JPS61179548A JP61023752A JP2375286A JPS61179548A JP S61179548 A JPS61179548 A JP S61179548A JP 61023752 A JP61023752 A JP 61023752A JP 2375286 A JP2375286 A JP 2375286A JP S61179548 A JPS61179548 A JP S61179548A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding
- clamper
- capillary
- point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Abstract
Description
【発明の詳細な説明】 本発明はワイヤボンディング装置に関する。[Detailed description of the invention] The present invention relates to a wire bonding device.
半導体装置、半導体集積回路装置などの組立において、
ベレット（回路素子）とリード間を極細のワイヤ（金線
など）で繋ぐ際、適正な長さのワイヤでボンディングし
ないと、第１ボンディング点と第２ボンディング点を結
ぶワイヤループは長すぎたり、あるいは短かすぎたりし
て、ワイヤが不所望な部分（素子あるいは外部のリード
等）に接触し、ショート不良を起こす。In the assembly of semiconductor devices, semiconductor integrated circuit devices, etc.
When bonding between a bullet (circuit element) and a lead using an extremely thin wire (gold wire, etc.), if the wire is not of an appropriate length, the wire loop connecting the first bonding point and the second bonding point may be too long. Alternatively, if the wire is too short, the wire may come into contact with an undesired part (such as an element or an external lead), causing a short circuit.
このようなことから、保持されるワイヤに常に一定のテ
ンシプン（張力）を加えた状態でワイヤボンティングを
行ない、ワイヤを保持するキャピラリ内でのワイヤの突
出、あるいは戻りの動作をスムースにし、所望のワイヤ
ループを形成するように配慮している。For this reason, wire bonding is performed with a constant tension applied to the wire being held, so that the wire can smoothly protrude or return within the capillary that holds the wire, and the wire can be bonded as desired. Care is taken to form a wire loop.
しかし、ボンディング間距離は単一の半導体装置の組立
においてもそれぞれ異なり、前記のテ／シ璽ン付与方法
では全てのワイヤループが望ましい形状とはなりにくい
。すなわち、たとえばボンディング間距離が長ければボ
ンディングツールであるキャピラリ内への引き込みは大
きくする必要があり、ボンディング間距離が短かければ
、キャピラリ内への引き込みは少なくてよい。However, the distance between bondings varies even in the assembly of a single semiconductor device, and it is difficult for all wire loops to have a desired shape with the above-mentioned method for applying wire/seals. That is, for example, if the distance between bondings is long, it is necessary to draw more into the capillary which is a bonding tool, and if the distance between bondings is short, the amount of drawing into the capillary needs to be smaller.
一方、ワイヤを掴んで破断させるクランパは第１図に示
すように動作する。すなわち、クランバは第１ボンデイ
ング（Ｂｐ）、第２ボンデイング（Ｂｔ、）が完了した
時点でワイヤをクランプしてワイヤを掴んで引っ張り、
ワイヤを破断させた時点から第１ボンデイングが行なえ
るような状態となる時点（たとえばＡｕワイヤの先端を
ボール状化１−てワイヤがキャピラリから抜けないよう
な状態とする。）までの間ワイヤをクランプする。なお
、実線はキャピラリの上下動を、鎖線はクランパの開閉
動作を示す。On the other hand, a clamper that grips and breaks the wire operates as shown in FIG. That is, when the first bonding (Bp) and the second bonding (Bt) are completed, the clamper clamps the wire, grabs the wire, and pulls it.
The wire is held between the time the wire is broken and the time when the first bonding can be performed (for example, the tip of the Au wire is made into a ball shape so that the wire does not come out from the capillary). Clamp. Note that the solid line indicates the vertical movement of the capillary, and the chain line indicates the opening/closing operation of the clamper.
そこで、本発明者はこのクランパによるワイヤのクラン
プを第２ボンデイング前に行なうことによって、ワイヤ
が必要以上キャピラリから抜は出たものを再びキャピラ
リの中へ引戻すことによって適正なワイヤループを形作
らせることを考えた。Therefore, by clamping the wire with this clamper before the second bonding, the wire pulled out from the capillary more than necessary is pulled back into the capillary, thereby forming a proper wire loop. I thought about that.
したがって、本発明の目的は適正なワイヤループを形成
することのできるワイヤボンディング装置を提供するこ
とにある。Therefore, an object of the present invention is to provide a wire bonding device that can form a proper wire loop.
以下実施例により本発明を説明する。The present invention will be explained below with reference to Examples.
第２図（ａ） 、 （ｂ）は本発明のワイヤボンディン
グ装置に従ったボンディング方法の一実施例を示す。FIGS. 2(a) and 2(b) show an embodiment of the bonding method according to the wire bonding apparatus of the present invention.
いずれも、キャピラリ１でワイヤ２を保持（クランプ）
し、タブ３上に固定したベレット４の電極（第１ボンデ
ィング点）にワイヤ２の先端を固定した後、キャピラリ
１を矢印で示すように上昇。In both cases, capillary 1 holds wire 2 (clamp)
After fixing the tip of the wire 2 to the electrode (first bonding point) of the pellet 4 fixed on the tab 3, the capillary 1 is raised as shown by the arrow.
水平移動、下降させてワイヤ２の途中をリード（第２ボ
ンディング点）５に圧着させて固定し、その後、クラン
パ６でワイヤ２を掴みキャピラリ１の上昇時にワイヤ２
を第２ボンディング点近傍で破断することによって−張
りのワイヤボンディングを完了する。ところで、同図（
ａ）は第２ボンディング作業時にキャピラリ１が高い位
置でクランパ６が閉動作してワイヤ２をクランプする状
態を示し、同図（ｂ）はキャピラリ１の高さが低い位置
でクランパ６が閉動作してワイヤ２をクランプする状態
を示す。キャピラリ１が高い位置にある前者では、クラ
ンパ６が早く閉動作するため、キャピラリｌ内にワイヤ
２が後者の場合に較べてより多く引き戻される。このよ
うに、クランパの閉動作（クランプ）の時点をボンディ
ング間距離に合せて対応させて行なわせれば、所望のワ
イヤループを得ることができ、ワイヤルーズの大きすぎ
によるワイヤの崩れによるショート不良、丘状のワイヤ
ループが形成されないワイヤ不足によるショート不良は
発生しない。なお、第４図は、クランパ６の一例を示す
ものであって、このクランパ６は図示はしないクランプ
アームに固定され、キャピラリの上部に位置する。そし
て、電磁石７によって相互に開閉する１対の爪８によっ
てワイヤ２を保持する。図中９は１対の爪８を閉じるス
プリング、１０は一方の爪に固定されるリング状のワイ
ヤガイドである。The wire 2 is moved horizontally and lowered, and the middle of the wire 2 is crimped and fixed to the lead (second bonding point) 5. Then, the wire 2 is grabbed by the clamper 6 and the wire 2 is moved as the capillary 1 rises.
The tension wire bonding is completed by breaking the wire near the second bonding point. By the way, the same figure (
Figure a) shows a state in which the capillary 1 is in a high position and the clamper 6 is closed to clamp the wire 2 during the second bonding operation, and Figure (b) is a state in which the capillary 1 is in a low position and the clamper 6 is in its closing action. The state in which the wire 2 is clamped is shown. In the former case, where the capillary 1 is at a high position, the clamper 6 closes earlier, so the wire 2 is pulled back into the capillary l more than in the latter case. In this way, if the closing operation (clamping) of the clamper is performed in accordance with the bonding distance, the desired wire loop can be obtained, and short circuits caused by wire collapse due to excessive wire looseness can be avoided. No hill-shaped wire loops are formed, and short-circuit failures due to insufficient wires do not occur. Note that FIG. 4 shows an example of the clamper 6, which is fixed to a clamp arm (not shown) and located above the capillary. The wire 2 is held by a pair of claws 8 that are mutually opened and closed by an electromagnet 7. In the figure, 9 is a spring that closes the pair of claws 8, and 10 is a ring-shaped wire guide fixed to one of the claws.
クランパ６の開閉動作は第３図で示すように、クランパ
開閉回路によって制御される。クランパ開閉回路にはエ
ンコーダからパルス信号が送られるとともに、メモリか
らボンディングデータがコンパレータに送うれる。コン
パレータによってボンディング間距離（Ｌ）とあらかじ
め設定された複数の基準距離との比較がなされる。そし
て、第５図に示すようにＬが！、（あるいは２．以下）
のとき、Ｔ１時間後のＮ１番目のパルス数時にクランパ
が閉動作してワイヤを保持する。また、Ｌが！、（ある
いは２１以上）のとき１２時間後のＮ１番目のパルス時
にクランパが閉動作する。実際のワイヤボンディング時
には基準距離は２〜３あれば充分である。また、−張り
のワイヤボンディング時のパルス数は常に一定である。The opening/closing operation of the clamper 6 is controlled by a clamper opening/closing circuit, as shown in FIG. A pulse signal is sent from the encoder to the clamper opening/closing circuit, and bonding data is sent from the memory to the comparator. A comparator compares the bonding distance (L) with a plurality of preset reference distances. Then, as shown in Figure 5, L! , (or 2. or less)
In this case, the clamper closes and holds the wire at the N1th pulse number after T1 time. Also, L! , (or 21 or more), the clamper closes at the N1th pulse after 12 hours. During actual wire bonding, a reference distance of 2 to 3 is sufficient. Further, the number of pulses during negative wire bonding is always constant.
このような実施例によれば、ワイヤのクランプ開始時点
を自由に制御できることから、ボンディング間距離に対
応させてワイヤループを形作るワイヤの長さを制御でき
、所望のワ・イヤループを形作ることができる。また、
この実施例では、第２ボンディング前にワイヤをクラン
プし、その状態でキャピラリが下降するため、ワイヤは
しごかれるようにして押し潰しく圧着）がなされる。こ
の結果、ワイヤの圧着部の破断耐ワイヤの立ち上がり角
度が大きくなり、ワ、イヤ破断にありてはワイヤは第２
ボンディング点の押し潰れ近傍で破断し、ワイヤの破断
部が圧着部から長く伸びる（ティル）ように残らない。According to such an embodiment, since the point at which the wire starts to be clamped can be freely controlled, the length of the wire that forms the wire loop can be controlled in accordance with the distance between bondings, and the desired wire loop can be formed. . Also,
In this embodiment, the wire is clamped before the second bonding, and the capillary is lowered in this state, so that the wire is squeezed and crimped. As a result, the rising angle of the breakage resistant wire at the crimped portion of the wire becomes large, and when the wire breaks, the wire becomes the second
The wire breaks near the crushing point of the bonding point, and the broken part of the wire does not remain as a long extension (tilt) from the crimped part.
このため、他のワイヤ等との接触も発生しない。Therefore, contact with other wires etc. does not occur.
なお、本発明は前記実施例に限定されない。Note that the present invention is not limited to the above embodiments.
以上のように、本発明によればワイヤボンディング時に
自由にワイヤ長さを調整できるので、ショート不良原因
とはならない適正なワイヤループを形成できる。また、
ティルも残さないことからショート不良が防止でき、歩
留の向上を図ることができる。As described above, according to the present invention, since the wire length can be freely adjusted during wire bonding, an appropriate wire loop that does not cause short-circuits can be formed. Also,
Since no till is left behind, short-circuit defects can be prevented and yields can be improved.
第１図はキャピラリおよびクランパの動きを示すグラフ
、第２図（ａ） 、 （ｂ）は本発明のワイヤボンディ
ング装置によるワイヤボンディング状態の一実施例を示
す説明図、第３図は本発明のワイヤボンディング装置の
機能を説明するブロック図、第４図は本発明のワイヤボ
ンディング装置のクランパの斜視図、第５図は第４図に
示されたクランパの動きを示すグラフである。
１・・・キャピラリ、２・・・ワイヤ、３・・・タブ、
４・・・ベレット、５・・・リード、６・・・クランパ
、７・・・電磁石、８・・・爪、９・・・スプリング、
１ｏ・・・ワイヤガイド。
銹−南
第 ２ 図FIG. 1 is a graph showing the movement of the capillary and clamper, FIGS. 2(a) and (b) are explanatory diagrams showing an example of the wire bonding state by the wire bonding apparatus of the present invention, and FIG. 3 is a graph showing the movement of the capillary and the clamper. FIG. 4 is a block diagram illustrating the functions of the wire bonding apparatus, FIG. 4 is a perspective view of the clamper of the wire bonding apparatus of the present invention, and FIG. 5 is a graph showing the movement of the clamper shown in FIG. 4. 1... Capillary, 2... Wire, 3... Tab,
4...Bellet, 5...Lead, 6...Clamper, 7...Electromagnet, 8...Claw, 9...Spring,
1o...Wire guide. Seri-Minami Figure 2
Claims (1)
イヤの先端を圧着固定した後、ボンディングツールから
ワイヤを解き出しながらワイヤの途中を第２ボンディン
グ点に圧着固定するワイヤボンディング装置において、
前記ボンディングツールが第１ボンディング点から第２
ボンディング点に到る間に前記ワイヤを掴む機構と、前
記第１ボンディング点と第２ボンディング点の間の距離
に応じて前記機構のワイヤを掴む動作を制御する制御機
構とを有することを特徴とするワイヤボンディング装置
。1. In a wire bonding device that holds a wire and crimps and fixes the tip of the wire to a first bonding point, and then unwinds the wire from a bonding tool and crimps and fixes the middle of the wire to a second bonding point,
The bonding tool moves from the first bonding point to the second bonding point.
The present invention is characterized by comprising a mechanism that grips the wire while it reaches the bonding point, and a control mechanism that controls the wire gripping operation of the mechanism depending on the distance between the first bonding point and the second bonding point. wire bonding equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61023752A JPS61179548A (en) | 1986-02-07 | 1986-02-07 | Wire bonding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61023752A JPS61179548A (en) | 1986-02-07 | 1986-02-07 | Wire bonding device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6389579A Division JPS55156334A (en) | 1979-05-25 | 1979-05-25 | Wire bonding method and apparatus thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61179548A true JPS61179548A (en) | 1986-08-12 |
Family
ID=12119045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61023752A Pending JPS61179548A (en) | 1986-02-07 | 1986-02-07 | Wire bonding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61179548A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5225570A (en) * | 1975-08-22 | 1977-02-25 | Hitachi Ltd | Wire bonding apparatus |
| JPS5435679A (en) * | 1977-08-25 | 1979-03-15 | Toshiba Corp | Semiconductor connection method |
| JPS5451476A (en) * | 1977-09-30 | 1979-04-23 | Shinkawa Seisakusho Kk | Device for bonding wires |
-
1986
- 1986-02-07 JP JP61023752A patent/JPS61179548A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5225570A (en) * | 1975-08-22 | 1977-02-25 | Hitachi Ltd | Wire bonding apparatus |
| JPS5435679A (en) * | 1977-08-25 | 1979-03-15 | Toshiba Corp | Semiconductor connection method |
| JPS5451476A (en) * | 1977-09-30 | 1979-04-23 | Shinkawa Seisakusho Kk | Device for bonding wires |
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